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    • 24. 发明申请
    • Predictive Adaptive Scan Ordering for Video Coding
    • 视频编码的预测自适应扫描排序
    • US20110090955A1
    • 2011-04-21
    • US12905872
    • 2010-10-15
    • Lingzhi LiuXiang LiJianhua ZhengNam LingCheng-Xiong Zhang
    • Lingzhi LiuXiang LiJianhua ZhengNam LingCheng-Xiong Zhang
    • H04N11/02
    • H04N19/157H04N19/129H04N19/139H04N19/176H04N19/61
    • An apparatus comprising an inter-prediction motion compensation unit, a transform unit coupled to the inter-prediction motion compensation unit, a quantization unit coupled to the transform unit such that the transform unit is positioned between the inter-prediction motion compensation unit and the quantization unit, a scanning unit coupled to the quantization unit such that the quantization unit is positioned between the transform unit and the scanning unit, and an adaptive scan order predictor unit coupled to the inter-prediction motion compensation unit, the quantization unit, and the scanning unit. An apparatus comprising an entropy decoding unit, an inverse scanning unit coupled to the entropy decoding unit, an inverse quantization unit coupled to the inverse scanning unit such that the inverse scanning unit is positioned between the entropy coding unit and the inverse quantization unit, and an adaptive scan order predictor unit coupled to the entropy decoding unit and the inverse scanning unit.
    • 一种装置,包括帧间预测运动补偿单元,耦合到帧间预测运动补偿单元的变换单元,耦合到变换单元的量化单元,使得变换单元位于帧间预测运动补偿单元和量化之间 单元,耦合到所述量化单元的扫描单元,使得所述量化单元位于所述变换单元和所述扫描单元之间,以及自适应扫描顺序预测单元,其耦合到所述帧间预测运动补偿单元,所述量化单元和所述扫描 单元。 一种装置,包括熵解码单元,耦合到熵解码单元的反向扫描单元,与所述逆扫描单元耦合的逆量化单元,使得所述逆扫描单元位于所述熵编码单元和所述逆量化单元之间, 耦合到熵解码单元和反向扫描单元的自适应扫描顺序预测单元。
    • 25. 发明申请
    • (110) DISLOCATION-FREE MONOCRYSTALLINE SILICON AND ITS PREPARATION AND THE GRAPHITE HEAT SYSTEM USED
    • (110)无色无晶硅及其制备和使用的石墨加热系统
    • US20100307403A1
    • 2010-12-09
    • US12377681
    • 2007-04-19
    • Haoping ShenYutian WangYuanqing HuWeize ShangXiang LiHaijing LiWei SiRunfei Gao
    • Haoping ShenYutian WangYuanqing HuWeize ShangXiang LiHaijing LiWei SiRunfei Gao
    • C30B15/22C30B15/14
    • C30B35/00C30B15/14C30B29/06Y10T117/1068
    • The invention discloses (110) dislocation-free monocrystalline silicon and its preparation and the graphite heating system used. The process for preparation is as follows: clearing furnace and tidy the heat field; loading furnace; vacuumizing and argon charging; heating raw material; crystal seeding; expanding shoulder; rotating shoulder: speeding up the speed of shoulder-expanding; equal diameter: after shoulder-rotating, stabilize the crystal growth speed; finishing: turning off the power of crucible, decreasing the drawing rate manually; turning off the furnace. The graphite heating system includes: upper insulation column, lower insulation column and hearth tray arranged from the top down to form the external shell, and the peripheral surface is a stepped structure, and the thickness of the insulation layer of the upper insulation column is 20-30 mm, the thickness of the insulation layer of the lower insulation column is 60-70 mm, and the thickness of the insulation layer of the hearth tray is 70-80 mm. (110) dislocation-free monocrystalline silicon is cylinder structure, on its expanded shoulders 2 symmetrical main crest lines and 4 symmetrical sub-crest lines are formed, and 2 symmetrical main crest lines are formed on crystal cylinder surface. The present invention realizes manufacturing (110) dislocation-free monocrystalline silicon so as to meet the demand of the domestic and international markets.
    • 本发明公开了(110)无位错单晶硅及其制备方法和石墨加热系统。 制备过程如下:清理炉,整理热场; 装载炉; 抽真空和氩气充电; 加热原料; 晶种; 膨胀的肩膀 旋转肩膀:加快肩膀膨胀的速度; 等直径:肩旋转后,稳定晶体生长速度; 精加工:关闭坩埚的功率,手动降低拉拔率; 关掉炉子。 石墨加热系统包括:上绝缘柱,下绝缘柱和炉床托盘,从上到下配置形成外壳,外周面为台阶结构,上绝缘柱绝缘层厚度为20 -30mm,下绝缘柱的绝缘层的厚度为60-70mm,炉床托盘的绝缘层的厚度为70-80mm。 (110)无位错单晶硅为气缸结构,其膨胀肩2根对称主波峰线形成4根对称子脊线,在水晶圆筒表面形成2对称的主峰线。 本发明实现了制造(110)无位错的单晶硅,以满足国内外市场的需求。