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1. 发明申请

US20100307403A1 (110) DISLOCATION-FREE MONOCRYSTALLINE SILICON AND ITS PREPARATION AND THE GRAPHITE HEAT SYSTEM USED 审中-公开
标题翻译：（110）无色无晶硅及其制备和使用的石墨加热系统
公开(公告)号：US20100307403A1
公开(公告)日：2010-12-09
申请号：US12377681
申请日：2007-04-19
申请人： Haoping Shen , Yutian Wang , Yuanqing Hu , Weize Shang , Xiang Li , Haijing Li , Wei Si , Runfei Gao
发明人： Haoping Shen , Yutian Wang , Yuanqing Hu , Weize Shang , Xiang Li , Haijing Li , Wei Si , Runfei Gao
IPC分类号： C30B15/22 , C30B15/14
CPC分类号： C30B35/00 , C30B15/14 , C30B29/06 , Y10T117/1068
摘要： The invention discloses (110) dislocation-free monocrystalline silicon and its preparation and the graphite heating system used. The process for preparation is as follows: clearing furnace and tidy the heat field; loading furnace; vacuumizing and argon charging; heating raw material; crystal seeding; expanding shoulder; rotating shoulder: speeding up the speed of shoulder-expanding; equal diameter: after shoulder-rotating, stabilize the crystal growth speed; finishing: turning off the power of crucible, decreasing the drawing rate manually; turning off the furnace. The graphite heating system includes: upper insulation column, lower insulation column and hearth tray arranged from the top down to form the external shell, and the peripheral surface is a stepped structure, and the thickness of the insulation layer of the upper insulation column is 20-30 mm, the thickness of the insulation layer of the lower insulation column is 60-70 mm, and the thickness of the insulation layer of the hearth tray is 70-80 mm. (110) dislocation-free monocrystalline silicon is cylinder structure, on its expanded shoulders 2 symmetrical main crest lines and 4 symmetrical sub-crest lines are formed, and 2 symmetrical main crest lines are formed on crystal cylinder surface. The present invention realizes manufacturing (110) dislocation-free monocrystalline silicon so as to meet the demand of the domestic and international markets.
摘要翻译：本发明公开了（110）无位错单晶硅及其制备方法和石墨加热系统。制备过程如下：清理炉，整理热场; 装载炉; 抽真空和氩气充电; 加热原料; 晶种; 膨胀的肩膀旋转肩膀：加快肩膀膨胀的速度; 等直径：肩旋转后，稳定晶体生长速度; 精加工：关闭坩埚的功率，手动降低拉拔率; 关掉炉子。石墨加热系统包括：上绝缘柱，下绝缘柱和炉床托盘，从上到下配置形成外壳，外周面为台阶结构，上绝缘柱绝缘层厚度为20 -30mm，下绝缘柱的绝缘层的厚度为60-70mm，炉床托盘的绝缘层的厚度为70-80mm。（110）无位错单晶硅为气缸结构，其膨胀肩2根对称主波峰线形成4根对称子脊线，在水晶圆筒表面形成2对称的主峰线。本发明实现了制造（110）无位错的单晶硅，以满足国内外市场的需求。

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