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    • 21. 发明申请
    • METHOD OF MANUFACTURING THIN FILM
    • 制造薄膜的方法
    • US20120148746A1
    • 2012-06-14
    • US13392433
    • 2011-06-01
    • Kazuyoshi HondaKunihiko BesshoTakashi Shimada
    • Kazuyoshi HondaKunihiko BesshoTakashi Shimada
    • C23C16/448C23C16/455
    • C23C14/24C23C14/243C23C14/542C23C14/562H01M4/0423H01M4/1391H01M4/1395
    • The present invention provides a thin film manufacturing method which realizes stable, highly-efficient film formation using a nozzle-type evaporation source while avoiding unnecessary scattering and deposition of a film formation material after the termination of the film formation. Used is a film forming apparatus including: an evaporation chamber 16; a film forming chamber 17 in which a substrate 21 is provided; an evaporation source 19 holding a film formation material 15 and including an opening surface 14; a moving mechanism 35 configured to cause the evaporation source 19 to move; and a conductance variable structure 34. The film formation is performed in a state where the opening surface 14 of the evaporation source 19 holding the heated film formation material is located close to the substrate 21 while evacuating the evaporation chamber 16 and the film forming chamber 17 without shutting off communication between the evaporation chamber 16 and the film forming chamber 17 by the conductance variable structure 34. Next, the evaporation of the film formation material is suppressed by introducing a nonreactive gas to the evaporation chamber 16 and the film forming chamber 17 to adjust pressure in each chamber to predetermined pressure or more. Then, the evaporation source 19 is moved by the moving mechanism 35 such that the opening surface 14 is located away from the substrate 21. The conductance variable structure is activated to shut off the communication between these chambers, and the film formation material is cooled while continuously introducing the nonreactive gas to the evaporation chamber 16.
    • 本发明提供一种薄膜制造方法,其使用喷嘴型蒸发源实现稳定,高效的成膜,同时避免成膜材料终止后不必要的成膜材料的散射和沉积。 使用的成膜装置包括:蒸发室16; 设置有基板21的成膜室17; 保持成膜材料15并包括开口表面14的蒸发源19; 构造成使蒸发源19移动的移动机构35; 和导电可变结构34.成膜是在保持加热成膜材料的蒸发源19的开口表面14位于靠近基板21的同时抽空蒸发室16和成膜室17的状态下进行的 而不用电导可变结构34关闭蒸发室16和成膜室17之间的连通。接下来,通过向蒸发室16和成膜室17引入非反应性气体来抑制成膜材料的蒸发, 将每个室中的压力调节至预定压力或更大。 然后,蒸发源19被移动机构35移动,使得开口表面14远离基板21.导电可变结构被激活以切断这些室之间的连通,并且成膜材料被冷却,同时 将非反应性气体连续引入蒸发室16。