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21. 发明授权

US07497767B2 Vibration damping during chemical mechanical polishing 有权
标题翻译：化学机械抛光时的振动阻尼
公开(公告)号：US07497767B2
公开(公告)日：2009-03-03
申请号：US11046189
申请日：2005-01-28
申请人： Hung Chih Chen , Shijian Li , John M. White , Ramin Emami , Fred C. Redeker , Steven M. Zuniga , Ramakrishna Cheboli
发明人： Hung Chih Chen , Shijian Li , John M. White , Ramin Emami , Fred C. Redeker , Steven M. Zuniga , Ramakrishna Cheboli
IPC分类号： B24B5/35
CPC分类号： B24B37/30
摘要： A carrier head for chemical mechanical polishing is described. The carrier head includes a backing assembly, a housing and a damping material. The backing assembly includes a substrate support surface. The housing is connectable to a drive shaft to rotate with the drive shaft about a rotation axis. In one implementation, the damping material is in a load path between the backing assembly and the housing to reduce transmission of vibrations from the backing assembly to the housing.
摘要翻译：描述了用于化学机械抛光的载体头。载体头包括背衬组件，壳体和阻尼材料。背衬组件包括基板支撑表面。壳体可连接到驱动轴，以驱动轴绕旋转轴线旋转。在一个实施方案中，阻尼材料位于背衬组件和壳体之间的负载路径中，以减少振动从背衬组件传递到壳体。

22. 发明授权

US07104267B2 Planarized copper cleaning for reduced defects 失效
标题翻译：平面化铜清洁减少缺陷
公开(公告)号：US07104267B2
公开(公告)日：2006-09-12
申请号：US09727133
申请日：2000-11-29
申请人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
发明人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
IPC分类号： H01L21/302
CPC分类号： H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A process for treating a copper or copper alloy substrate surface with a composition and corrosion inhibitor solution to minimize defect formation and surface corrosion, the method including applying a composition including one or more chelating agents, a pH adjusting agent to produce a pH between about 3 and about 11, and deionized water, and then applying a corrosion inhibitor solution. The composition may further comprise a reducing agent and/or corrosion inhibitor. The method may further comprise applying the corrosion inhibitor solution prior to treating the substrate surface with the composition.
摘要翻译：一种用组合物和腐蚀抑制剂溶液处理铜或铜合金基材表面以最小化缺陷形成和表面腐蚀的方法，该方法包括施加包含一种或多种螯合剂的组合物，pH调节剂以产生约3 约11，去离子水，然后涂上缓蚀剂溶液。组合物还可以包含还原剂和/或缓蚀剂。该方法还可以包括在用组合物处理基材表面之前施加腐蚀抑制剂溶液。

23. 发明授权

US07041599B1 High through-put Cu CMP with significantly reduced erosion and dishing 失效
标题翻译：高通量Cu CMP具有显着减少的侵蚀和凹陷
公开(公告)号：US07041599B1
公开(公告)日：2006-05-09
申请号：US09469709
申请日：1999-12-21
申请人： Shijian Li , Fred C. Redeker , John White , Ramin Emami
发明人： Shijian Li , Fred C. Redeker , John White , Ramin Emami
IPC分类号： H01L21/302
CPC分类号： B24B37/04 , B24B57/02 , H01L21/3212
摘要： High through-put Cu CMP is achieved with reduced erosion and dishing by a multi-step polishing technique. Deposited Cu is polished with fixed abrasive polishing pads initially at a high removal rate and subsequently at a reduced removal rate and high Cu:barrier layer (Ta) selectivity. Embodiments of the present invention include reducing dishing by: controlling platen rotating speeds; increasing the concentration of active chemicals; and cleaning the polishing pads between wafers. Embodiments also include removing particulate material during CMP by increasing the flow rate of the chemical agent or controlling the static etching rate between about 100 Å and about 150 Å per minute, and recycling the chemical agent. Embodiments further include flowing an inhibitor across the wafer surface after each CMP step to reduce the static etching rate.
摘要翻译：通过多步抛光技术，可以减少腐蚀和凹陷，实现高通量Cu CMP。沉积的Cu以固定的研磨抛光垫抛光，最初以高的去除速率和随后的降低的去除速率和高的Cu：阻挡层（Ta）选择性。本发明的实施例包括：通过以下步骤减少凹陷：控制压板转速; 增加活性化学品的浓度; 并在晶片之间清洁抛光垫。实施方案还包括通过增加化学试剂的流速或控制每分钟约100埃至约150埃的静态蚀刻速率和循环该化学试剂来在CMP期间除去颗粒物质。实施例还包括在每个CMP步骤之后使抑制剂流过晶片表面以降低静态蚀刻速率。

24. 发明授权

US06786996B2 Apparatus and method for edge bead removal 失效
标题翻译：用于边缘珠去除的装置和方法
公开(公告)号：US06786996B2
公开(公告)日：2004-09-07
申请号：US09978865
申请日：2001-10-16
申请人： Ramin Emami
发明人： Ramin Emami
IPC分类号： H01L21306
CPC分类号： H01L21/67161 , H01L21/02071 , H01L21/6708 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/68785 , H01L21/7684
摘要： The present invention generally provides an improved apparatus and method for removing an edge bead from a substrate. The apparatus includes a processing chamber having an edge bead removal fluid distribution system positioned therein and a substrate support member positioned in the processing chamber proximate the fluid distribution system. The substrate support member generally includes an upper substrate support surface having a plurality of fluid dispensing apertures formed therein, at least three capillary ring support posts radially positioned about a perimeter of the upper substrate support surface, and a annular capillary ring having a planar upper surface rigidly mounted to the capillary ring support posts. The substrate support member further includes at least three selectively extendable substrate support pin assemblies positioned proximate the annular capillary ring on the substrate support member, and at least three substrate gripper assemblies radially positioned about the perimeter of the upper substrate support surface. The method of the invention generally includes supporting a substrate in a face down position at a preferred capillary distance above an annular capillary ring with a plurality of selectively extendable substrate support pins and securing the substrate at the preferred capillary distance with a plurality of gripper assemblies. The method further includes rotating the substrate with the plurality of gripper assemblies, dispensing an edge bead removal solution onto a backside of the substrate, and generating a capillary flow of the edge bead removal solution in an area between a front surface of the substrate and an annular capillary ring that operates to remove the edge bead from the substrate.
摘要翻译：本发明总体上提供了一种用于从衬底去除边缘珠的改进的装置和方法。该设备包括处理室，其具有定位在其中的边缘珠去除流体分配系统和位于处理室中的靠近流体分配系统的基板支撑构件。衬底支撑构件通常包括上部衬底支撑表面，其具有形成在其中的多个流体分配孔，至少三个围绕上部衬底支撑表面的周边径向定位的毛细管环支撑柱和环形毛细管环，其具有平坦的上表面刚性地安装到毛细管环支撑柱上。衬底支撑构件还包括至少三个选择性地可延伸的衬底支撑销组件，其位于衬底支撑构件上的环形毛细管环附近，以及至少三个衬底夹持器组件，其围绕上部衬底支撑表面的周边径向定位。本发明的方法通常包括在具有多个可选择性延伸的衬底支撑销并且将衬底与多个夹持器组件固定在优选的毛细管距离的环形毛细管环之上的优选毛细管距离处的面朝下位置支撑衬底。该方法还包括用多个夹持器组件旋转衬底，将边缘珠去除溶液分配到衬底的背面，并且在衬底的前表面和衬底的前表面之间的区域中产生边缘珠去除溶液的毛细管流环形毛细管环，用于从衬底移除边缘珠。

25. 发明授权

US06669538B2 Pad cleaning for a CMP system 失效
标题翻译： CMP系统的垫清洁
公开(公告)号：US06669538B2
公开(公告)日：2003-12-30
申请号：US09512745
申请日：2000-02-24
申请人： Shijian Li , Ramin Emami , Sen-Hou Ko , Shi-Ping Wang , Fred C. Redeker , Lizhong Sun , Stan Tsai
发明人： Shijian Li , Ramin Emami , Sen-Hou Ko , Shi-Ping Wang , Fred C. Redeker , Lizhong Sun , Stan Tsai
IPC分类号： B24B100
CPC分类号： B24B53/017
摘要： The present invention generally provides a system and apparatus for cleaning a polishing pad, such as a fixed abrasive pad, in a substrate processing system. In one embodiment, the system includes one or more nozzles which spray a fluid at pressures of about 30 psi to about 300 psi or greater, as measured at the nozzle, onto a polishing pad at acute angles to the surface of the polishing pad. The nozzles can spray downward and outward toward the perimeter of the pad to facilitate the debris removal therefrom. The system can include a pressure source to produce a sufficient fluid pressure substantially higher than the typical fluid pressure available from a facility installation.
摘要翻译：本发明通常提供一种用于在衬底处理系统中清洁抛光垫，例如固定研磨垫的系统和装置。在一个实施例中，该系统包括一个或多个喷嘴，其以在喷嘴处测量的约30psi至约300psi或更大的压力喷射流体至抛光垫的表面的锐角处的抛光垫上。喷嘴可以朝向垫的周边向下和向外喷射以便于从其中移除碎片。该系统可以包括压力源以产生足够的流体压力，该流体压力显着高于可从设施设施获得的典型流体压力。

26. 发明授权

US06432826B1 Planarized Cu cleaning for reduced defects 失效
标题翻译：平面化的Cu清洁，减少缺陷
公开(公告)号：US06432826B1
公开(公告)日：2002-08-13
申请号：US09450479
申请日：1999-11-29
申请人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
发明人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
IPC分类号： H01L21302
CPC分类号： H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： Cu metallization is treated to reduce defects and effect passivation by removing a thin surface layer or removing corrosion stains, subsequent to CMP and barrier layer removal, employing a cleaning composition comprising deionized water, an acid and ammonium hydroxide and/or an amine. Embodiments include removing up to about 100 Å of the Cu metallization surface in a damascene opening by sequentially treating the exposed Cu surface with: an optional corrosion inhibitor; a solution having a pH of about 4 to about 11 and containing an acid, ammonium hydroxide and/or an amine, and deionized water; and a corrosion inhibitor.
摘要翻译：通过使用包含去离子水，酸和氢氧化铵和/或胺的清洁组合物，在CMP和阻隔层去除之后，通过去除薄的表面层或去除腐蚀污渍来处理Cu金属化以减少缺陷并实现钝化。实施例包括通过用任意的腐蚀抑制剂依次处理暴露的Cu表面，在镶嵌开口中去除多达约100埃的Cu金属化表面; pH为约4至约11并含有酸，氢氧化铵和/或胺的溶液和去离子水; 和腐蚀抑制剂。

27. 发明授权

US06322427B1 Conditioning fixed abrasive articles 有权
标题翻译：调理固定磨料制品
公开(公告)号：US06322427B1
公开(公告)日：2001-11-27
申请号：US09302530
申请日：1999-04-30
申请人： Shijian Li , Sidney Huey , Ramin Emami , Fritz Redeker , John White
发明人： Shijian Li , Sidney Huey , Ramin Emami , Fritz Redeker , John White
IPC分类号： B24B100
CPC分类号： B24B53/017 , B24B37/042
摘要： The useful lifetime of a fixed abrasive article is extended and wafer-to-wafer uniformity enhanced by preconditioning a fixed abrasive element and/or periodic conditioning after initial wafer polishing. Embodiments include preconditioning by forced removal of an upper binder-rich portion of the fixed abrasive elements to expose abrasive particles having a similar concentration as the bulk concentration at about one half the height of the elements. Embodiments further include periodic conditioning after initial wafer polishing by forced removal of an upper portion of the fixed abrasive elements.
摘要翻译：固定磨料制品的使用寿命延长，并且通过预先固定研磨元件和/或在初始晶片抛光之后进行周期性调节来提高晶片到晶片的均匀性。实施例包括通过强制去除固定研磨元件的上部粘结剂丰富部分来预处理，以使具有与元件高度的大约一半高度的体积浓度相似的浓度的磨料颗粒暴露。实施例还包括通过强制去除固定研磨元件的上部的初始晶片抛光之后的周期性调节。

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