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    • 23. 发明授权
    • Monolithic multi-functional integrated sensor and method for fabricating the same
    • 单片多功能集成传感器及其制造方法
    • US07051595B2
    • 2006-05-30
    • US11150212
    • 2005-06-13
    • Sang-wook KwonJong-hwa Won
    • Sang-wook KwonJong-hwa Won
    • G01L19/04G01L9/06
    • G01L9/0054G01L9/065
    • A monolithic multi-functional integrated sensor and method for making the monolithic multi-functional integrated sensor. The monolithic multi-functional integrated sensor includes: a pressure sensor including a plurality of piezoresistors having resistance values which vary with a change in external pressure, the piezoresistors being disposed in a direction so as to be subject to a piezoresistive effect produced by the external pressure at or beyond a predetermined first level; and a temperature sensor including a resistor having a resistance value which varies with a change in temperature, the resistor being disposed in a direction so as to be subject to a piezoresistive effect produced by the external pressure below a predetermined second level.
    • 一种用于制造单片多功能集成传感器的单片多功能集成传感器和方法。 单片多功能集成传感器包括:压力传感器,其包括具有随着外部压力变化而变化的电阻值的多个压敏电阻器,压电电阻器设置在受到外部压力产生的压阻效应的方向上 处于或超过预定的第一级; 以及温度传感器,其具有电阻值随温度变化而变化的电阻器,所述电阻器设置在使所述外部压力低于规定的第二电平而产生的压阻效应的方向上。