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21. 发明授权

US09245780B2 Vacuum processing apparatus and operating method of the same 有权
标题翻译：真空处理装置及其操作方法
公开(公告)号：US09245780B2
公开(公告)日：2016-01-26
申请号：US13592408
申请日：2012-08-23
申请人： Takahiro Shimomura , Yoshifumi Ogawa , Susumu Tauchi
发明人： Takahiro Shimomura , Yoshifumi Ogawa , Susumu Tauchi
IPC分类号： H01L21/677 , H01L21/67
CPC分类号： H01L21/67161 , H01L21/67184
摘要： A vacuum processing apparatus includes a row of containers of vacuum transfer chambers connected to each other behind a lock chamber, a wafer being transferred through depressurized inside of the row of the containers of the vacuum transfer containers, an intermediate chamber disposed between the containers of the vacuum transfer chambers, a plurality of processing units including processing containers respectively connected to left or right side walls of the containers of the vacuum transfer chambers and the wafer is processed therein, and a bypass chamber which constitutes a bypass path connecting the processing units, where only either the wafer which is being transferred from the lock chamber toward one of the processing units or the wafer which was processed in one of the processing units and is being transferred toward the lock chamber is transferred through the containers of the vacuum transfer chambers.
摘要翻译：真空处理装置包括一排在锁室后面彼此连接的真空传送室的容器，通过真空传送容器的容器排中的减压内部传送的晶片，设置在真空传送容器的容器之间的中间室在真空传送室中处理多个处理单元，包括分别连接到真空传送室的容器的左侧壁或右侧壁的处理容器和晶片，以及构成连接处理单元的旁路的旁路室，其中，只有从锁定室转移到处理单元之一的晶片或在一个处理单元中被处理并且被转移到锁定室的晶片被传送通过真空传送室的容器。

22. 发明授权

US08460467B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08460467B2
公开(公告)日：2013-06-11
申请号：US13177076
申请日：2011-07-06
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： C23F1/00 , C23C16/00 , H01L21/677
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus includes a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas, and a mass flow controller unit interposed between two of the processing chambers for supplying gas to the chambers.
摘要翻译：一种真空处理装置，包括设置在其中心的转印单元，多个处理室，每个处理室具有用于支撑待处理物体的处理台，并使用气体进行处理;以及质量流量控制单元，用于向腔室供应气体的处理室。

23. 发明授权

US08286822B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08286822B2
公开(公告)日：2012-10-16
申请号：US12651701
申请日：2010-01-04
申请人： Susumu Tauchi , Akitaka Makino
发明人： Susumu Tauchi , Akitaka Makino
IPC分类号： B65D6/40 , B65D53/02 , B65D43/04
CPC分类号： H01L21/67126 , H01L21/6719 , H01L21/67196 , H01L21/67201
摘要： The invention provides a highly reliable plasma processing apparatus having stable sealing performance. The vacuum processing apparatus comprises a vacuum vessel having its inside decompressed; an opening disposed in a wall of the vacuum vessel for communicating the inside with the outside thereof and through which a sample to be processed is taken in and out; a valve body 701 disposed outside the wall for airtightly sealing or opening the opening; and a drive unit for driving the valve body to carry out the sealing or opening operation, the drive unit comprising a first member 705 coupled to an actuator 702 that moves along a substantially linear first direction as a result of operation of the actuator, a second member 706 coupled to the first member 705 that moves along a substantially linear second direction that intersects with the first direction, and the valve body 701 coupled to the second member that seals the opening as a result of the movement of the second member.
摘要翻译：本发明提供了具有稳定的密封性能的高度可靠的等离子体处理装置。真空处理装置包括其内部减压的真空容器; 设置在真空容器的壁中的开口，用于将内部与其外部连通，并且待处理样品通过该开口被取出; 阀体701，其设置在所述壁的外侧，用于气密地密封或打开所述开口; 驱动单元，用于驱动阀体进行密封或打开操作，驱动单元包括第一构件705，第一构件705联接到作为致动器的操作的结果沿基本线性的第一方向移动的致动器702;第二构件构件706，其联接到第一构件705，其沿着与第一方向相交的基本上线性的第二方向移动;以及阀体701，其联接到由于第二构件的移动而密封开口的第二构件。

24. 发明申请

US20050194093A1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20050194093A1
公开(公告)日：2005-09-08
申请号：US10928259
申请日：2004-08-30
申请人： Akitaka Makino , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Hideki Kihara , Susumu Tauchi
IPC分类号： H01L21/3065 , C23F1/00
CPC分类号： H01L21/6719 , H01J37/32522 , H01L21/67126 , Y10S156/916
摘要： The present invention provides a vacuum processing apparatus which is small-sized and requires a small installation area. The vacuum processing apparatus includes a vacuum container which has a processing chamber inside thereof, wherein the pressure inside the processing chamber is reduced and plasma used for processing a sample is formed inside the processing chamber, a bed portion which is arranged below the vacuum container and stores a device for supplying electricity and electric signals used for processing inside the vacuum container, and a transport chamber which is connected with the vacuum container and includes a transport device for transporting the sample inside thereof. The vacuum processing apparatus further includes a connector portion which is mounted on the bed portion in a state that the connector portion faces a lower portion of the transport chamber, wherein the bed portion is configured to be detachably mounted on the vacuum processing apparatus in a state that the bed portion performs the connection and the disconnection at the connector portion.
摘要翻译：本发明提供一种小型化并且需要小的安装面积的真空处理装置。真空处理装置包括在其内部具有处理室的真空容器，其中处理室内部的压力减小，处理室内部形成用于处理样品的等离子体，布置在真空容器下方的床部，存储用于供电的设备和用于在真空容器内部进行处理的电信号;以及运送室，其与该真空容器连接并且包括用于在其内部运送样品的运送装置。真空处理装置还包括连接器部分，其在连接器部分面向传送室的下部的状态下安装在床部分上，其中，床部分被构造成在状态下可拆卸地安装在真空处理设备上床部分在连接器部分处执行连接和断开。

25. 发明授权

US07807581B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07807581B2
公开(公告)日：2010-10-05
申请号：US11683014
申请日：2007-03-07
申请人： Susumu Tauchi , Akitaka Makino , Seiichi Watanabe , Naoki Yasui
发明人： Susumu Tauchi , Akitaka Makino , Seiichi Watanabe , Naoki Yasui
IPC分类号： H01L21/302
CPC分类号： C23F4/00 , G03F1/80 , H01J37/32522 , H01L21/67017 , H01L21/67109 , H01L21/6831
摘要： The present invention provides a plasma processing apparatus or a plasma processing method that can etch a multilayer film structure for constituting a gate structure with high accuracy and high efficiency. A plasma processing method of, on processing a sample on a sample stage 112 in a depressurized discharge room 117, etching a multilayer film (including a high-k and a metal gate) at 0.1 Pa or less and with the sample stage 112 temperature-regulated by using a pressure gauge 133 to be used for pressure regulation and connected to the processing room and a main pump for exhaustion 130.
摘要翻译：本发明提供等离子体处理装置或等离子体处理方法，其可以以高精度和高效率蚀刻用于构成栅极结构的多层膜结构。一种等离子体处理方法，在对减压排出室117中的样品台112上的样品进行处理时，蚀刻0.1Pa以下的多层膜（包括高k和金属栅极），并且在样品台112中，通过使用用于压力调节并连接到处理室的压力计133和用于耗尽的主泵130进行调节。

26. 发明授权

US07674351B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07674351B2
公开(公告)日：2010-03-09
申请号：US10929439
申请日：2004-08-31
申请人： Akitaka Makino , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Hideki Kihara , Susumu Tauchi
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/6719 , H01J37/32513 , H01J37/32522 , H01J37/32807 , H01J37/32816 , H01J37/32908 , Y10S156/916
摘要： A vacuum processing apparatus that includes an inner wall member disposed inside of an outer side wall member of a vacuum container, the inner wall member surrounding a side of a sample stand on which a sample to be processed is placed and facing to a plasma generated in a chamber inside of the inner wall member. The apparatus also includes an upper member arranged in the vacuum chamber above a flange portion of the inner wall member, contacting with an upper surface of the flange portion and transmitting a force pressing downwardly in a state where the inside of the vacuum container is reduced in pressure. The inner wall member is thermally connected with a temperature adjusting device which controls a temperature of the inner wall member through the upper surface of the flange portion and the upper member.
摘要翻译：一种真空处理装置，包括设置在真空容器的外侧壁构件内部的内壁构件，所述内壁构件围绕样品台的一侧放置待处理样品并面向等离子体在内壁构件内部的腔室。该装置还包括一个上部构件，其布置在真空室中，位于内壁构件的凸缘部分的上方，与凸缘部分的上表面接触并且在真空容器的内部减小的状态下向下压力压力。内壁构件通过温度调节装置热连接，温度调节装置通过凸缘部分的上表面和上部构件来控制内壁构件的温度。

27. 发明授权

US07641069B2 Vacuum processing apparatus 失效
标题翻译：真空加工设备
公开(公告)号：US07641069B2
公开(公告)日：2010-01-05
申请号：US11068990
申请日：2005-03-02
申请人： Susumu Tauchi , Akitaka Makino
发明人： Susumu Tauchi , Akitaka Makino
IPC分类号： B65D6/40 , B65D43/20 , B65D51/16 , B65D43/12
CPC分类号： H01L21/67126 , H01L21/6719 , H01L21/67196 , H01L21/67201
摘要： The invention provides a highly reliable plasma processing apparatus having stable sealing performance. The vacuum processing apparatus comprises a vacuum vessel having its inside decompressed; an opening disposed in a wall of the vacuum vessel for communicating the inside with the outside thereof and through which a sample to be processed is taken in and out; a valve body 701 disposed outside the wall for airtightly sealing or opening the opening; and a drive unit for driving the valve body to carry out the sealing or opening operation, the drive unit comprising a first member 705 coupled to an actuator 702 that moves along a substantially linear first direction as a result of operation of the actuator, a second member 706 coupled to the first member 705 that moves along a substantially linear second direction that intersects with the first direction, and the valve body 701 coupled to the second member that seals the opening as a result of the movement of the second member.
摘要翻译：本发明提供了具有稳定的密封性能的高度可靠的等离子体处理装置。真空处理装置包括其内部减压的真空容器; 设置在真空容器的壁中的开口，用于将内部与其外部连通，并且待处理样品通过该开口被取出; 阀体701，其设置在所述壁的外侧，用于气密地密封或打开所述开口; 驱动单元，用于驱动阀体进行密封或打开操作，驱动单元包括第一构件705，第一构件705联接到作为致动器的操作的结果沿基本线性的第一方向移动的致动器702;第二构件构件706，其联接到第一构件705，其沿着与第一方向相交的基本上线性的第二方向移动;以及阀体701，其联接到由于第二构件的移动而密封开口的第二构件。

28. 发明授权

US07416633B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07416633B2
公开(公告)日：2008-08-26
申请号：US10928259
申请日：2004-08-30
申请人： Akitaka Makino , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Hideki Kihara , Susumu Tauchi
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/6719 , H01J37/32522 , H01L21/67126 , Y10S156/916
摘要： Described is a vacuum processing apparatus that includes a vacuum container which has a processing chamber inside thereof, wherein a plasma used for processing a sample is formed inside the processing chamber. The processing chamber has an upper side wall which surrounds a space in which the plasma is formed and contacts the plasma, and a lower side wall inside of which a sample stand, supporting the sample to be processed, is arranged. A connecting portion is provided between the upper and lower side walls, and a heater is provided for heating the upper side wall. The apparatus also includes structure at the connecting portion to impede heat transfer between the upper and lower side walls.
摘要翻译：描述了一种真空处理装置，其包括在其内部具有处理室的真空容器，其中在处理室内形成用于处理样品的等离子体。处理室具有围绕形成等离子体并与等离子体接触的空间的上侧壁，并且配置有支撑待处理样品的样品架的下侧壁。连接部设置在上侧壁和下侧壁之间，并且设置有用于加热上侧壁的加热器。该装置还包括在连接部分处的结构，以阻止上下侧壁之间的热传递。

29. 外观设计

USD556704S1 Grounded electrode for a plasma processing apparatus 有权
标题翻译：等离子体处理装置的接地电极
公开(公告)号：USD556704S1
公开(公告)日：2007-12-04
申请号：US29236982
申请日：2005-08-25
申请人： Tsutomu Nakamura , Susumu Tauchi , Akitaka Makino
设计人： Tsutomu Nakamura , Susumu Tauchi , Akitaka Makino

30. 发明授权

US07194821B2 Vacuum processing apparatus and vacuum processing method 有权
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US07194821B2
公开(公告)日：2007-03-27
申请号：US11068804
申请日：2005-03-02
申请人： Manabu Edamura , Akitaka Makino , Motohiko Yoshigai , Takanori Nakatsuka , Susumu Tauchi
发明人： Manabu Edamura , Akitaka Makino , Motohiko Yoshigai , Takanori Nakatsuka , Susumu Tauchi
IPC分类号： F26B7/00
CPC分类号： G05D16/2066
摘要： The downtime of a vacuum processing apparatus due to wet cleaning is reduced. In a vacuum processing apparatus that requires aging for its chamber or process container after vacuum evacuation of the apparatus and before actual processing of a workpiece, when the chamber has been opened to atmosphere for the purpose of wet cleaning or component replacement, the apparatus comprises a high precision absolute pressure gauge for use in processing, a wide range gauge capable of measuring a wide range of pressures, and a controller, wherein the controller uses a pressure trend during vacuum evacuation to determine whether the vacuum evacuation is satisfactory, and starts aging upon determining that the vacuum evacuation is satisfactory even if the actual pressure is not below a prescribed value. The controller determines relationship between an apparent flow rate (leak rate) measured by the absolute pressure gauge when the chamber is vacuum sealed, and a chamber pressure measured by the wide range gauge, and then measures only the pressure to determine whether a baseline leak rate is reached.
摘要翻译：减少了由于湿清洗而造成的真空处理装置的停机时间。在真空处理装置中，在对设备进行真空抽真空之后并且在实际处理工件之前需要对其室或处理容器进行老化的情况下，当室已经被打开到大气中以进行湿式清洁或部件更换时，该装置包括：用于加工的高精度绝对压力表，可测量宽范围压力的宽范围计量器和控制器，其中控制器在真空抽真空中使用压力趋势，以确定真空抽气是否令人满意，并开始老化确定即使实际压力不低于规定值，真空排气也令人满意。控制器确定当室被真空密封时由绝对压力表测量的表观流量（泄漏率）与由宽范围量规测量的室压力之间的关系，然后仅测量压力以确定基线泄漏率到达了。

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