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21. 发明授权

US09017533B2 Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning 有权
标题翻译：用于通过多频RF阻抗调谐来控制工件表面处的等离子体离子密度和离子能量的径向分布的装置
公开(公告)号：US09017533B2
公开(公告)日：2015-04-28
申请号：US12173198
申请日：2008-07-15
申请人： John C. Forster , Daniel J. Hoffman , John A. Pipitone , Xianmin Tang , Rongjun Wang
发明人： John C. Forster , Daniel J. Hoffman , John A. Pipitone , Xianmin Tang , Rongjun Wang
IPC分类号： C23C14/34 , H01J37/32 , H01J37/34
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/34 , H01J37/3444
摘要： In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.
摘要翻译：在物理气相沉积等离子体反应器中，多频阻抗控制器耦合在RF地与（a）偏置电极之一之间，（b）溅射靶，控制器在第一组频率处提供可调阻抗，所述第一包括要阻止的第一组频率和要被接纳的第一组频率的频率集合。第一多频阻抗控制器包括并联连接并被调谐到要被允许的所述第一组频率的一组带通滤波器，以及串联连接并被调谐到要被阻挡的所述第一组频率的一组陷波滤波器。

22. 发明申请

US20130285065A1 PVD BUFFER LAYERS FOR LED FABRICATION 有权
标题翻译：用于LED制造的PVD缓冲层
公开(公告)号：US20130285065A1
公开(公告)日：2013-10-31
申请号：US13868385
申请日：2013-04-23
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
IPC分类号： H01L21/02 , H01L29/205
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
摘要翻译：描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。还描述了PVD AlN缓冲层的工艺条件。还描述了PVD氮化铝缓冲层的基板预处理。在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。

23. 发明授权

US08133368B2 Encapsulated sputtering target 有权
标题翻译：封装溅射靶
公开(公告)号：US08133368B2
公开(公告)日：2012-03-13
申请号：US12263013
申请日：2008-10-31
申请人： Lara Hawrylchak , Xianmin Tang , Vijay Parhke , Rongjun Wang
发明人： Lara Hawrylchak , Xianmin Tang , Vijay Parhke , Rongjun Wang
IPC分类号： C23C14/00 , C23C14/06 , C23C14/08 , C23C14/14
CPC分类号： C23C14/3407
摘要： Embodiments of the invention provide encapsulated sputtering targets and methods for preparing such targets prior to a physical vapor deposition (PVD) process. In one embodiment, an encapsulated target for PVD is provided which includes a target layer containing lanthanum disposed on a backing plate and an encapsulation layer containing titanium disposed on or over the target layer. In one example, the target layer contains metallic lanthanum or lanthanum oxide and the encapsulation layer contains titanium. The encapsulation layer may have a thickness within a range from about 1,000 Å to about 2,000 Å. In another embodiment, a method for preparing an encapsulated target prior to a PVD process is provided which includes positioning an encapsulated target within a PVD chamber and exposing the encapsulation layer to a plasma while removing the encapsulation layer and revealing an upper surface of the target layer.
摘要翻译：本发明的实施方案提供了封装的溅射靶和在物理气相沉积（PVD））方法之前制备这些靶的方法。在一个实施方案中，提供了用于PVD的包封的靶，其包括设置在背板上的含有镧的靶层和包含设置在靶层上或上的钛的包封层。在一个实例中，目标层包含金属镧或氧化镧，并且包封层含有钛。封装层的厚度可以在大约从1000到大约2000的范围内。在另一个实施方案中，提供了一种用于在PVD工艺之前制备封装的靶的方法，其包括将包封的靶定位在PVD室内并将封装层暴露于等离子体，同时移除封装层并露出靶层的上表面。

24. 发明申请

US20100108500A1 ENCAPSULATED SPUTTERING TARGET 有权
标题翻译：封装溅射目标
公开(公告)号：US20100108500A1
公开(公告)日：2010-05-06
申请号：US12263013
申请日：2008-10-31
申请人： LARA HAWRYLCHAK , Xianmin Tang , Vijay Parhke , Rongjun Wang
发明人： LARA HAWRYLCHAK , Xianmin Tang , Vijay Parhke , Rongjun Wang
IPC分类号： C23C14/34 , C23F1/00
CPC分类号： C23C14/3407
摘要： Embodiments of the invention provide encapsulated sputtering targets and methods for preparing such targets prior to a physical vapor deposition (PVD) process. In one embodiment, an encapsulated target for PVD is provided which includes a target layer containing lanthanum disposed on a backing plate and an encapsulation layer containing titanium disposed on or over the target layer. In one example, the target layer contains metallic lanthanum or lanthanum oxide and the encapsulation layer contains titanium. The encapsulation layer may have a thickness within a range from about 1,000 Å to about 2,000 Å. In another embodiment, a method for preparing an encapsulated target prior to a PVD process is provided which includes positioning an encapsulated target within a PVD chamber and exposing the encapsulation layer to a plasma while removing the encapsulation layer and revealing an upper surface of the target layer.
摘要翻译：本发明的实施方案提供了封装的溅射靶和在物理气相沉积（PVD））方法之前制备这些靶的方法。在一个实施方案中，提供了用于PVD的包封的靶，其包括设置在背板上的含有镧的靶层和包含设置在靶层上或上的钛的包封层。在一个实例中，目标层包含金属镧或氧化镧，并且包封层含有钛。封装层的厚度可以在大约从1000到大约2000的范围内。在另一个实施方案中，提供了一种用于在PVD工艺之前制备封装的靶的方法，其包括将包封的靶定位在PVD室内并将封装层暴露于等离子体，同时移除封装层并露出靶层的上表面。

25. 发明授权

US09396933B2 PVD buffer layers for LED fabrication 有权
标题翻译：用于LED制造的PVD缓冲层
公开(公告)号：US09396933B2
公开(公告)日：2016-07-19
申请号：US13868385
申请日：2013-04-23
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandia , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandia , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
IPC分类号： H01L21/02 , H01L29/205 , H01L33/00 , C30B23/02 , C30B29/40 , H01L33/12
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
摘要翻译：描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。还描述了PVD AlN缓冲层的工艺条件。还描述了PVD氮化铝缓冲层的基板预处理。在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。

26. 发明申请

US20100089748A1 CONTROL OF EROSION PROFILE ON A DIELECTRIC RF SPUTTER TARGET 审中-公开
标题翻译：控制电介质射频射灯目标的腐蚀特性
公开(公告)号：US20100089748A1
公开(公告)日：2010-04-15
申请号：US12252224
申请日：2008-10-15
申请人： JOHN C.FORSTER , Daniel J. Hoffman , John A. Pipitone , Xianmin Tang , RongJun Wang
发明人： JOHN C.FORSTER , Daniel J. Hoffman , John A. Pipitone , Xianmin Tang , RongJun Wang
IPC分类号： C23C14/34 , B32B37/12
CPC分类号： C23C14/3407 , H01J37/32082 , H01J37/3408 , H01J37/347 , Y10T156/10
摘要： The present invention generally includes a sputtering target assembly that may be used in an RF sputtering process. The sputtering target assembly may include a backing plate and a sputtering target. The backing plate may be shaped to have one or more fins that extend from the backing plate towards the sputtering target. The sputtering target may be bonded to the fins of the backing plate. The RF current utilized during a sputtering process will be applied to the sputtering target at the one or more fin locations. The fins may extend from the backing plate at a location that corresponds to a magnetic field produced by a magnetron that may be disposed behind the backing plate. By controlling the location where the RF current is coupled to the sputtering target to be aligned with the magnetic field, the erosion of the sputtering target may be controlled.
摘要翻译：本发明通常包括可用于RF溅射工艺中的溅射靶组件。溅射靶组件可以包括背板和溅射靶。背板可以被成形为具有从背板朝向溅射靶延伸的一个或多个翅片。溅射靶可以结合到背板的翅片上。在溅射过程中使用的RF电流将被施加到在一个或多个鳍位置处的溅射靶。翅片可以在对应于可以设置在背板后面的磁控管产生的磁场的位置处从背板延伸。通过控制RF电流耦合到溅射靶以与磁场对准的位置，可以控制溅射靶的侵蚀。

27. 发明授权

US08435392B2 Encapsulated sputtering target 有权
标题翻译：封装溅射靶
公开(公告)号：US08435392B2
公开(公告)日：2013-05-07
申请号：US13397184
申请日：2012-02-15
申请人： Lara Hawrylchak , Xianmin Tang , Vijay Parhke , Rongjun Wang
发明人： Lara Hawrylchak , Xianmin Tang , Vijay Parhke , Rongjun Wang
IPC分类号： C23C14/00 , C23C14/06 , C23C14/08 , C23C14/14
CPC分类号： C23C14/3407
摘要： Embodiments of the invention provide encapsulated sputtering targets for physical vapor deposition. In one embodiment, an encapsulated target contains a target layer containing a first metal or an oxide of the first metal disposed over a backing plate, an adhesion interlayer disposed between the target layer and the backing plate, and an encapsulation layer containing a second metal or an oxide of the second metal disposed over the target layer and an annular sidewall of the backing plate. The target layer is encapsulated by the backing plate and the encapsulation layer and the first metal is different than the second metal. In some examples, the first metal is lanthanum or lithium and the target layer contains metallic lanthanum, lanthanum oxide, or metallic lithium. In other examples, the second metal is titanium or aluminum and the encapsulation layer contains metallic titanium, titanium oxide, metallic aluminum, or aluminum oxide.
摘要翻译：本发明的实施例提供用于物理气相沉积的封装溅射靶。在一个实施方案中，包封的靶含有包含设置在背板上的第一金属或第一金属的氧化物的目标层，设置在靶层和背衬板之间的粘合中间层，以及包含第二金属或设置在目标层上的第二金属的氧化物和背板的环形侧壁。目标层被背板封装，并且封装层和第一金属不同于第二金属。在一些实例中，第一金属是镧或锂，靶层含有金属镧，氧化镧或金属锂。在其他实例中，第二金属是钛或铝，并且包封层含有金属钛，氧化钛，金属铝或氧化铝。

28. 发明申请

US20120138457A1 ENCAPSULATED SPUTTERING TARGET 有权
标题翻译：封装溅射目标
公开(公告)号：US20120138457A1
公开(公告)日：2012-06-07
申请号：US13397184
申请日：2012-02-15
申请人： LARA HAWRYLCHAK , Xianmin Tang , Vijay Parhke , Rongjun Wang
发明人： LARA HAWRYLCHAK , Xianmin Tang , Vijay Parhke , Rongjun Wang
IPC分类号： C23C14/34
CPC分类号： C23C14/3407
摘要： Embodiments of the invention provide encapsulated sputtering targets for physical vapor deposition. In one embodiment, an encapsulated target contains a target layer containing a first metal or an oxide of the first metal disposed over a backing plate, an adhesion interlayer disposed between the target layer and the backing plate, and an encapsulation layer containing a second metal or an oxide of the second metal disposed over the target layer and an annular sidewall of the backing plate. The target layer is encapsulated by the backing plate and the encapsulation layer and the first metal is different than the second metal. In some examples, the first metal is lanthanum or lithium and the target layer contains metallic lanthanum, lanthanum oxide, or metallic lithium. In other examples, the second metal is titanium or aluminum and the encapsulation layer contains metallic titanium, titanium oxide, metallic aluminum, or aluminum oxide.
摘要翻译：本发明的实施例提供用于物理气相沉积的封装溅射靶。在一个实施方案中，包封的靶含有包含设置在背板上的第一金属或第一金属的氧化物的目标层，设置在靶层和背衬板之间的粘合中间层，以及包含第二金属或设置在目标层上的第二金属的氧化物和背板的环形侧壁。目标层被背板封装，并且封装层和第一金属不同于第二金属。在一些实例中，第一金属是镧或锂，靶层含有金属镧，氧化镧或金属锂。在其他实例中，第二金属是钛或铝，并且包封层含有金属钛，氧化钛，金属铝或氧化铝。

29. 发明申请

US20100012029A1 APPARATUS FOR CONTROLLING RADIAL DISTRIBUTION OF PLASMA ION DENSITY AND ION ENERGY AT A WORKPIECE SURFACE BY MULTI-FREQUENCY RF IMPEDANCE TUNING 有权
标题翻译：用于通过多频RF阻抗调谐控制工作表面等离子体密度和离子能量的径向分布的装置
公开(公告)号：US20100012029A1
公开(公告)日：2010-01-21
申请号：US12173198
申请日：2008-07-15
申请人： John C. FORSTER , Daniel J. Hoffman , John A. Pipitone , Xianmin Tang , Rongjun Wang
发明人： John C. FORSTER , Daniel J. Hoffman , John A. Pipitone , Xianmin Tang , Rongjun Wang
IPC分类号： B05C11/00
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/34 , H01J37/3444
摘要： In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.
摘要翻译：在物理气相沉积等离子体反应器中，多频阻抗控制器耦合在RF地与（a）偏置电极之一之间，（b）溅射靶，控制器在第一组频率处提供可调阻抗，所述第一包括要阻止的第一组频率和要被接纳的第一组频率的频率集合。第一多频阻抗控制器包括并联连接并被调谐到要被允许的所述第一组频率的一组带通滤波器，以及串联连接并被调谐到要被阻挡的所述第一组频率的一组陷波滤波器。

30. 发明授权

US08558299B2 Semiconductor device with gate electrode stack including low resistivity tungsten and method of forming 有权
标题翻译：具有包括低电阻率钨的栅电极堆叠的半导体器件和形成方法
公开(公告)号：US08558299B2
公开(公告)日：2013-10-15
申请号：US13157164
申请日：2011-06-09
申请人： Yong Cao , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
发明人： Yong Cao , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
IPC分类号： H01L29/788
CPC分类号： H01L21/28079 , C23C14/165 , C23C14/345 , C23C14/35 , H01L21/28088 , H01L21/2855 , H01L29/4966 , H01L29/517 , H01L29/78
摘要： Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.
摘要翻译：本文所述的实施例提供了一种半导体器件及其形成方法和装置。半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。栅极电极堆叠包括在栅极介电层上的导电膜层，导电膜层上的难熔金属氮化物膜层，难熔金属氮化物膜层上的含硅膜层，以及硅 - 含有膜层。在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。

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