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21. 发明授权

US06635186B1 Chemical mechanical polishing composition and process 有权
标题翻译：化学机械抛光组合物和工艺
公开(公告)号：US06635186B1
公开(公告)日：2003-10-21
申请号：US09226996
申请日：1999-01-07
申请人： Robert J. Small , Laurence McGhee , David J. Maloney , Maria L. Peterson
发明人： Robert J. Small , Laurence McGhee , David J. Maloney , Maria L. Peterson
IPC分类号： H01L21302
CPC分类号： C09G1/02 , C09K13/00 , C09K13/06 , C23F3/00 , H01L21/02074 , H01L21/3212 , Y10S438/959
摘要： A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material. The pH of the slurry and the selectively oxidizing and reducing compound is adjusted to provide the differential removal of the metal and the dielectric material. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material, and an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid.
摘要翻译：用于化学机械抛光的组合物包括浆料。在组合物中提供足够量的选择性氧化和还原化合物以产生金属和介电材料的差别去除。 pH调节化合物调节组合物的pH以提供使得选择性氧化和还原化合物提供金属和介电材料的差异去除的pH。用于化学机械抛光的组合物通过包括有效量的羟胺化合物，过硫酸铵，作为过氧化氢的间接来源的化合物，过乙酸或高碘酸的化学机械抛光来改善。用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和电介质材料的机械去除。施加选择性氧化还原化合物以产生金属和电介质材料的微分去除。调节浆料和选择性氧化和还原化合物的pH以提供金属和电介质材料的差别去除。一种用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和介电材料的机械去除，以及用于化学机械抛光羟胺化合物，过硫酸铵，化合物为过氧化氢的间接来源，过乙酸或高碘酸。

22. 发明授权

US6117783A Chemical mechanical polishing composition and process 失效
标题翻译：化学机械抛光组合物和工艺
公开(公告)号：US6117783A
公开(公告)日：2000-09-12
申请号：US43505
申请日：1998-03-23
申请人： Robert J. Small , Laurence McGhee , David J. Maloney , Maria L. Peterson
发明人： Robert J. Small , Laurence McGhee , David J. Maloney , Maria L. Peterson
IPC分类号： C09G1/02 , C09K13/00 , C09K13/06 , C23F1/00 , C23F3/00 , H01L21/02 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/311 , H01L21/321 , H01L21/461 , H01L21/4763 , H01L21/8238
CPC分类号： C09G1/02 , C09K13/00 , C09K13/06 , C23F3/00 , H01L21/02074 , H01L21/3212 , Y10S438/959
摘要： A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material. The pH of the slurry and the selectively oxidizing and reducing compound is adjusted to provide the differential removal of the metal and the dielectric material. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material, and an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid.
摘要翻译： PCT No.PCT / US97 / 12220 Sec。 371日期：1998年3月23日 102（e）1998年3月23日PCT PCT 1997年7月21日PCT公布。出版物WO98 / 04646 日期1998年2月5日化学机械抛光用组合物包括浆料。在组合物中提供足够量的选择性氧化和还原化合物以产生金属和介电材料的差别去除。 pH调节化合物调节组合物的pH以提供使得选择性氧化和还原化合物提供金属和介电材料的差异去除的pH。用于化学机械抛光的组合物通过包括有效量的羟胺化合物，过硫酸铵，作为过氧化氢的间接来源的化合物，过乙酸或高碘酸的化学机械抛光来改善。用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和电介质材料的机械去除。施加选择性氧化还原化合物以产生金属和电介质材料的微分去除。调节浆料和选择性氧化和还原化合物的pH以提供金属和电介质材料的差别去除。一种用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和介电材料的机械去除，以及用于化学机械抛光羟胺化合物，过硫酸铵，化合物为过氧化氢的间接来源，过乙酸或高碘酸。

23. 发明授权

US07427305B2 Free radical-forming activator attached to solid and used to enhance CMP formulations 失效
标题翻译：自由基形成活化剂连接到固体上并用于增强CMP配方
公开(公告)号：US07427305B2
公开(公告)日：2008-09-23
申请号：US11405485
申请日：2006-04-18
申请人： Brandon Shane Scott , Robert J. Small
发明人： Brandon Shane Scott , Robert J. Small
IPC分类号： C09G1/02 , C09G1/04
CPC分类号： H01L21/3212 , B24B37/044 , C03C19/00 , C09G1/02 , C09K3/1436 , C09K3/1445 , C09K3/1463 , C23F3/00 , C23F3/04 , G11B5/3163 , G11B5/3169 , Y02P20/582
摘要： This invention relates to a method of making selected oxidizers or other free radical-producing compounds become more effective chemical etchants and/or oxidizers for CMP activities by promoting the formation of the free radicals in a CMP composition with one or more activators. The activator comprises iron, copper or combinations thereof. The activator coated abrasive is particularly effective as it brings the activator in close proximity to the targeted material on the substrate surface, and thus facilitates or accelerates the removal reaction substantially at the site of the targeted material. The activator reacts with the per-type oxidizer to form at least one oxygen-containing free radical. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced by this method.
摘要翻译：本发明涉及使用一种或多种活化剂促进在CMP组合物中形成自由基，使选择的氧化剂或其它产生自由基的化合物变成更有效的化学蚀刻剂和/或氧化剂用于CMP活性的方法。活化剂包括铁，铜或其组合。活化剂涂覆的磨料是特别有效的，因为其使活化剂紧邻基材表面上的目标材料，因此基本上在目标材料的位置促进或加速除去反应。活化剂与每种类型的氧化剂反应以形成至少一种含氧自由基。本发明进一步提供了一种在基底表面上抛光特征或层如金属膜的组合物的方法。本发明另外提供了通过该方法制造的基板。

24. 发明授权

US07387130B2 Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials 失效
标题翻译：包括具有还原和氧化电位的亲核胺化合物的清洁溶液
公开(公告)号：US07387130B2
公开(公告)日：2008-06-17
申请号：US11633459
申请日：2006-12-05
申请人： Wai Mun Lee , Charles U. Pittman, Jr. , Robert J. Small
发明人： Wai Mun Lee , Charles U. Pittman, Jr. , Robert J. Small
IPC分类号： B08B3/04 , C11D3/26 , C11D3/30 , C11D3/43
CPC分类号： G03F7/425 , C11D7/261 , C11D7/3218 , C11D7/3227 , C11D7/3245 , C11D7/3263 , C11D7/34 , C11D7/5009 , C11D7/5013 , C11D7/5022 , C11D11/0047 , C23G1/18
摘要： A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined.
摘要翻译：描述了用于去除抗蚀剂并从含有至少一种具有氧化和还原电位的亲核胺化合物的底物蚀刻残余物的组合物，至少一种有机溶剂，水和任选的螯合剂。优选包含螯合剂，因为它为清洁组合物提供了增加的稳定性和活性，使得组合物具有长期有效性。如果不存在螯合剂，组合物在混合后初始使用组合物时提供足够的剥离和清洁，仅具有短期的稳定性。在后一种情况下，组合物的亲核胺化合物和有机溶剂组分优选彼此保持分开，直到期望使用该组合物。此后，组合组件。

25. 发明授权

US07368388B2 Cerium oxide abrasives for chemical mechanical polishing 失效
标题翻译：用于化学机械抛光的氧化铈磨料
公开(公告)号：US07368388B2
公开(公告)日：2008-05-06
申请号：US11106490
申请日：2005-04-15
申请人： Robert J. Small , Christopher G Hayden
发明人： Robert J. Small , Christopher G Hayden
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , B24B37/044 , C03C19/00 , C03C23/008 , H01L21/3212
摘要： The use of mixed cerium-containing synthetic solid abrasive materials in chemical mechanical polishing slurries can provide better selectivity, better substrate removal rates, or lower defect rates than conventional ceria slurries. The slurries have abrasive particles that include a plurality of solid cerium-containing phases selected from CeO2, Ce2O3, cerium-nitride material, cerium-fluoride material, and cerium-sulfide material, where different cerium-containing materials are present in different particles or on the same particles.
摘要翻译：在化学机械抛光浆料中使用混合的含铈合成固体研磨材料可以提供比常规二氧化铈浆料更好的选择性，更好的底物去除速率或更低的缺陷率。浆料具有包含多个选自CeO 2，Ce 2 O 3 N的固体含铈相的磨料颗粒，氮化铈材料，氟化铈材料和铈 - 硫化物材料，其中不同的含铈材料以不同的颗粒或相同的颗粒存在。

26. 发明授权

US07276180B2 Chemical mechanical polishing composition and process 有权
标题翻译：化学机械抛光组合物和工艺
公开(公告)号：US07276180B2
公开(公告)日：2007-10-02
申请号：US10401405
申请日：2003-03-27
申请人： Robert J. Small , Laurence McGhee , David J. Maloney , Maria L. Peterson
发明人： Robert J. Small , Laurence McGhee , David J. Maloney , Maria L. Peterson
IPC分类号： C09K13/00
CPC分类号： C09G1/02 , C09K13/00 , C09K13/06 , C23F3/00 , H01L21/02074 , H01L21/3212 , Y10S438/959
摘要： A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material. The pH of the slurry and the selectively oxidizing and reducing compound is adjusted to provide the differential removal of the metal and the dielectric material. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material, and an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid.
摘要翻译：用于化学机械抛光的组合物包括浆料。在组合物中提供足够量的选择性氧化和还原化合物以产生金属和介电材料的差别去除。 pH调节化合物调节组合物的pH以提供使得选择性氧化和还原化合物提供金属和介电材料的差异去除的pH。用于化学机械抛光的组合物通过包括有效量的羟胺化合物，过硫酸铵，作为过氧化氢的间接来源的化合物，过乙酸或高碘酸的化学机械抛光来改善。用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和电介质材料的机械去除。施加选择性氧化还原化合物以产生金属和电介质材料的微分去除。调节浆料和选择性氧化和还原化合物的pH以提供金属和电介质材料的差别去除。一种用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和介电材料的机械去除，以及用于化学机械抛光羟胺化合物，过硫酸铵，化合物为过氧化氢的间接来源，过乙酸或高碘酸。

27. 发明授权

US07051742B2 Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials 失效
公开(公告)号：US07051742B2
公开(公告)日：2006-05-30
申请号：US10826286
申请日：2004-04-19
申请人： Wai Mun Lee , Charles U. Pittman, Jr. , Robert J. Small
发明人： Wai Mun Lee , Charles U. Pittman, Jr. , Robert J. Small
IPC分类号： B08B3/04 , C11D3/20 , C11D3/30 , C11D3/43
CPC分类号： H01L21/02071 , B24B37/042 , C09D9/00 , C11D3/2058 , C11D3/2065 , C11D3/2086 , C11D3/30 , C11D3/3427 , C11D3/3472 , C11D3/43 , C11D7/261 , C11D7/262 , C11D7/263 , C11D7/265 , C11D7/267 , C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/3227 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D7/5013 , C11D11/0047 , C11D11/0052 , C23G1/103 , C23G1/205 , G03F7/42 , G03F7/423 , G03F7/425 , H01L21/02052 , H01L21/02063 , H01L21/31133 , H01L21/76802 , H01L21/76885
摘要： A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.

28. 发明授权

US07033409B2 Compositions for chemical mechanical planarization of tantalum and tantalum nitride 失效
公开(公告)号：US07033409B2
公开(公告)日：2006-04-25
申请号：US10665417
申请日：2003-09-22
申请人： Robert J. Small , Maria Peterson , Tuan Truong , Melvin Keith Carter , Lily Yao
发明人： Robert J. Small , Maria Peterson , Tuan Truong , Melvin Keith Carter , Lily Yao
IPC分类号： B24B1/00
CPC分类号： H01L21/3212 , C09G1/02
摘要： The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.

29. 发明授权

US06916772B2 Sulfoxide pyrolid(in)one alkanolamine cleaner composition 失效
标题翻译：亚砜吡咯烷（一种）一种链烷醇胺清洗剂组合物
公开(公告)号：US06916772B2
公开(公告)日：2005-07-12
申请号：US10193185
申请日：2002-07-12
申请人： De-Ling Zhou , Robert J. Small
发明人： De-Ling Zhou , Robert J. Small
IPC分类号： C11D7/32 , C11D7/34 , C11D7/60 , C11D11/00 , C11D17/00 , G03F7/42 , H01L21/027 , C11D7/50
CPC分类号： G03F7/425 , C11D7/3218 , C11D7/3281 , C11D7/34 , C11D11/0047 , G03F7/426
摘要： The present invention relates to, inter alia, a composition for stripping photoresist from substrates comprising: about 5% to about 50% by weight of an alkyl substituted pyrrolidone, an alkyl substituted piperidone, or a mixture thereof, about 0.2% to about 20% of one or more alkanolamines, and about 50% to about 94% of a sulfoxide, sulfoxone, or mixture thereof. Advantageously, the composition can remove copper from a copper substrate at a rate of less than about 10 Å per minute when the substrate is immersed in the composition which is held at 70° C. for 30 minutes and rotated relative to the composition at about 200 revolutions per minute.
摘要翻译：本发明尤其涉及用于从基材上剥离光致抗蚀剂的组合物，包括：约5％至约50％重量的烷基取代的吡咯烷酮，烷基取代的哌啶酮或其混合物，约0.2％至约20％的一种或多种烷醇胺，以及约50％至约94％的亚砜，亚砜或其混合物。有利地，当将基底浸入保持在70℃的组合物中30分钟并以相对于组合物旋转的组合物时，组合物可以以小于约/分钟的速度从铜基底去除铜。每分钟转数。

30. 发明授权

US06756308B2 Chemical-mechanical planarization using ozone 失效
标题翻译：使用臭氧的化学机械平面化
公开(公告)号：US06756308B2
公开(公告)日：2004-06-29
申请号：US09783069
申请日：2001-02-13
申请人： Robert J. Small , Xiaowei Shang
发明人： Robert J. Small , Xiaowei Shang
IPC分类号： H01L21302
CPC分类号： H01L21/02024 , C09G1/02 , H01L21/31053 , H01L21/31058 , H01L21/3212
摘要： The present invention relates to the use of ozone (O3) as a reagent in chemical mechanical planarization either in aqueous solution or as a gas directly impinging on the surface to be planarized. An aqueous solution containing ozone may optionally contain abrasive particles and/or additional CMP reagents co-dissolved with the ozone including carbonate and bicarbonate anions, and organic acids such as formic, oxalic, acetic and glycol. Abrasives that may be added include alumina, silica, spinel, ceria, zirconia. Typical concentrations of ozone aqueous solution are in the range from approximately 1 part-per-million up to saturation. Ammonium salts, particularly ammonium carbonate, facilitate planarization in cooperation with ozone-containing aqueous solution. Low k dielectric materials, organic as well as inorganic, and difficult to oxidize metals can be planarized with ozone reagents pursuant to the present invention.
摘要翻译：本发明涉及臭氧（O 3）作为试剂在化学机械平面化中的用途，在水溶液中或直接照射在要平坦化的表面上的气体中。含有臭氧的水溶液可以任选地含有与臭氧共同溶解的磨料颗粒和/或另外的CMP试剂，包括碳酸盐和碳酸氢根阴离子，以及有机酸如甲酸，草酸，乙酸和乙二醇。可以加入的磨料包括氧化铝，二氧化硅，尖晶石，二氧化铈，氧化锆。臭氧水溶液的典型浓度在约百万分之一至百分之一至百分之一的范围内。铵盐，特别是碳酸铵，有助于与含臭氧水溶液合作进行平面化。根据本发明，用臭氧试剂平面化低k电介质材料，有机和无机，难以氧化金属。

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