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21. 发明授权

US08824662B2 Method and apparatus for interfacing a customer with a call center 有权
标题翻译：将客户与呼叫中心连接的方法和装置
公开(公告)号：US08824662B2
公开(公告)日：2014-09-02
申请号：US13474210
申请日：2012-05-17
申请人： Paul Martin
发明人： Paul Martin
IPC分类号： H04M3/00 , H04M5/00 , G06Q20/10 , H04M3/523
CPC分类号： H04M3/523 , G06Q20/10 , G06Q20/108 , H04M2203/2094 , H04M2242/30
摘要： A method for interfacing a customer with a call center. Information obtained from a Radio Frequency Identification (RFID) tag is transmitted to the call center to provide additional information about the customer and allow the session to be accurately routed within the call center. The call center may be accessed by telephone, computer, or other type of customer premises equipment over a voice or data network. The RFID tag may be an identification tag provided to the customer for access to the call center or may be a tag associated with the customer and not specific to the call center. The call center may route calls based on routing information contained in the RFID tag information, customer identity and previous sessions with that customer, personal and demographic information and statistical support records for other sessions involving customers with similar personal and demographic information, and according to agent statistical support records.
摘要翻译：一种将客户与呼叫中心进行接口的方法。从射频识别（RFID）标签获得的信息被发送到呼叫中心，以提供关于客户的附加信息，并允许会话在呼叫中心内被精确地路由。呼叫中心可以通过电话，计算机或其他类型的客户驻地设备通过语音或数据网络访问。 RFID标签可以是提供给客户以访问呼叫中心的识别标签，或者可以是与客户相关联并且不是呼叫中心特有的标签。呼叫中心可以根据包含在RFID标签信息，客户身份和以前会话中的路由信息来路由呼叫，个人和人口信息以及涉及具有相似个人和人口信息的客户的其他会话的统计支持记录，并且根据代理统计支持记录。

22. 发明授权

US08384118B2 LED assembly having maximum metal support for laser lift-off of growth substrate 有权
标题翻译： LED组件具有用于生长衬底的激光剥离的最大金属支撑
公开(公告)号：US08384118B2
公开(公告)日：2013-02-26
申请号：US12767845
申请日：2010-04-27
申请人： Stefano Schiaffino , Daniel A. Steigerwald , Mari Holcomb , Grigoriy Basin , Paul Martin , John Epler
发明人： Stefano Schiaffino , Daniel A. Steigerwald , Mari Holcomb , Grigoriy Basin , Paul Martin , John Epler
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/382 , H01L33/40 , H01L33/62 , H01L2224/73204 , H01L2924/01322 , H01L2924/00
摘要： Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.
摘要翻译：描述了在将LED管芯接合到基座之后，使用激光剥离工艺形成LED结构以去除生长衬底（例如，蓝宝石）的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极，其中电极覆盖LED结构的后表面的至少85％。底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面几乎被电极和底座支撑。也可以使用其它粘合技术。没有使用底层填料。然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

23. 发明授权

US08186018B2 Auxiliary handle for hand-held power tool 有权
标题翻译：手持式电动工具辅助手柄
公开(公告)号：US08186018B2
公开(公告)日：2012-05-29
申请号：US12584912
申请日：2009-09-14
申请人： Paul Martin
发明人： Paul Martin
IPC分类号： B25G1/10 , A45C13/26
CPC分类号： B25F5/026 , Y10T16/469 , Y10T16/4713 , Y10T16/498
摘要： An auxiliary handle for a hand-held power tool (7) includes a lockable lag hinge (46) provided between the clamping section (21) and the gripping member (34) and having a pivot pin (47), a tightening member (51) for tightening and loosening the clamping section (21) and arranged on an end (48) of the pivot pin (47) of the lag hinge (46), a locking device (41) for locking and releasing the lag hinge (46), and an independent from the tensioning member (51), a quick-release device (56) for the locking device (41) and the clamping section (21) for displacing the locking device (410 in a position in which the lag hinge (46) is released and for loosening tightening of the clamping section (21).
摘要翻译：用于手持式电动工具（7）的辅助手柄包括设置在夹紧部分（21）和夹紧构件（34）之间并具有枢轴销（47）的可锁定延伸铰链（46），紧固构件），用于紧固和松开夹紧部分（21）并且布置在滞后铰链（46）的枢轴销（47）的端部（48）上，用于锁定和释放滞后铰链（46）的锁定装置（41），并且与张紧构件（51）独立，用于锁定装置（41）的快速释放装置（56）和用于使锁定装置（410）在滞后铰链（ 46）被释放并且用于松开夹紧部分（21）的紧固。

24. 发明授权

US07736945B2 LED assembly having maximum metal support for laser lift-off of growth substrate 有权
标题翻译： LED组件具有用于生长衬底的激光剥离的最大金属支撑
公开(公告)号：US07736945B2
公开(公告)日：2010-06-15
申请号：US11611775
申请日：2006-12-15
申请人： Stefano Schiaffino , Daniel A. Steigerwald , Mari Holcomb , Grigoriy Basin , Paul Martin , John Epler
发明人： Stefano Schiaffino , Daniel A. Steigerwald , Mari Holcomb , Grigoriy Basin , Paul Martin , John Epler
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/382 , H01L33/40 , H01L33/62 , H01L2224/73204 , H01L2924/01322 , H01L2924/00
摘要： Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.
摘要翻译：描述了在将LED管芯接合到基座之后，使用激光剥离工艺形成LED结构以去除生长衬底（例如，蓝宝石）的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极，其中电极覆盖LED结构的后表面的至少85％。底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面几乎被电极和底座支撑。也可以使用其它粘合技术。没有使用底层填料。然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

25. 发明申请

US20060240585A1 Package-Integrated Thin Film LED 有权
标题翻译：封装集成薄膜LED
公开(公告)号：US20060240585A1
公开(公告)日：2006-10-26
申请号：US11421350
申请日：2006-05-31
申请人： John Epler , Paul Martin , Michael Krames
发明人： John Epler , Paul Martin , Michael Krames
IPC分类号： H01L21/00
CPC分类号： H01L33/48 , H01L24/73 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/486 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.
摘要翻译：在衬底上生长LED外延层（n型，p型和有源层）。对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。封装衬底提供电触头和导体，导致可焊接的封装连接。然后除去生长底物。因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

26. 发明申请

US20060121702A1 III-nitride light emitting devices fabricated by substrate removal 有权
公开(公告)号：US20060121702A1
公开(公告)日：2006-06-08
申请号：US11330209
申请日：2006-01-10
申请人： Carrie Coman , Fred Kish , Michael Krames , Paul Martin
发明人： Carrie Coman , Fred Kish , Michael Krames , Paul Martin
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： H01L33/40 , H01L33/32 , H01S5/0216 , H01S5/0421 , H01S5/18341 , H01S5/32341
摘要： Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode structure that result in improved performance and or cost-effectiveness are described. Furthermore, metal bonding, substrate liftoff, and a novel RIE device separation technique are employed to efficiently produce vertical GaN LEDs on a substrate chosen for its thermal conductivity and ease of fabrication.

27. 发明申请

US20060091409A1 Package-integrated thin film LED 有权
公开(公告)号：US20060091409A1
公开(公告)日：2006-05-04
申请号：US10977294
申请日：2004-10-28
申请人： John Epler , Paul Martin , Michael Krames
发明人： John Epler , Paul Martin , Michael Krames
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/48 , H01L24/73 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/486 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

28. 发明申请

US20050284452A1 Low pressure secondary regulator for gaseous fuels 审中-公开
标题翻译：用于气体燃料的低压次级调节器
公开(公告)号：US20050284452A1
公开(公告)日：2005-12-29
申请号：US11121364
申请日：2005-08-04
申请人： Paul Martin
发明人： Paul Martin
IPC分类号： F02B43/00 , F02M21/02 , F02M69/54
CPC分类号： F02M21/0239 , F02M21/0212 , F02M69/54 , Y02T10/32
摘要： A low pressure secondary regulator for gaseous fuels for industrial engines that are configured to function on gaseous fuels primarily on propane or natural gas. The GFR (Gaseous Fuel Regulator) is designed to receive gaseous fuel at low pressure (6 oz. or 11 w.c.) and 1. Govern the fuel requirements to the engine, 2. Seal off fuel supply when engine is not in operation. The inventive device includes: Valve Seat Assembly, Control Lever, Magnetic Sensitivity Control, Maximum Fuel Limit Set Screw, and Diaphragm. The valve seat assembly consists of a tapered valve seat and plunger with o-ring. The control lever is long and narrow with one 90 deg. bend. The magnetic sensitivity control involves the use of two magnets. The fuel limit set screw is fabricated from threaded rod. The diaphragm consists of a thin silicon liner with a rigid center and a spring clip.
摘要翻译：用于工业发动机的用于气体燃料的低压二次调节器，其被配置为主要在丙烷或天然气上的气体燃料上起作用。 GFR（气态燃料调节器）设计用于在低压（6盎司或11瓦特）和1处接收气态燃料。1.对发动机进行燃油要求。2.在发动机不工作时，密封燃油供应。本发明的装置包括：阀座组件，控制杆，磁敏度控制，最大燃油限位装置螺丝和隔膜。阀座组件由锥形阀座和带O形圈的柱塞组成。控制杆长而窄，一个90度。弯曲。磁敏感控制涉及使用两个磁体。燃油限位装置由螺杆制成。隔膜由具有刚性中心和弹簧夹的薄硅衬套组成。

29. 发明申请

US20050198393A1 METHOD AND APPARATUS FOR EXTENDIBLE INFORMATION AGGREGATIONAND PRESENTATION 审中-公开
标题翻译：可扩展信息的方法和装置聚合和展示
公开(公告)号：US20050198393A1
公开(公告)日：2005-09-08
申请号：US10905508
申请日：2005-01-07
申请人： William Stutz , Arulnambi Kaliappan , Ronald Capwell , Paul Martin , Todd Ogrin
发明人： William Stutz , Arulnambi Kaliappan , Ronald Capwell , Paul Martin , Todd Ogrin
IPC分类号： G06F17/22 , G06F17/24 , G06F15/16
CPC分类号： G06F17/2247 , G06F17/2264 , G06F17/24
摘要： Methods and apparatus for arbitrarily extendible information aggregation and display. This functionality is achieved by abstracting the components of the system into individual modules which communicate using a platform-independent, extendible markup language such as extensible markup language (XML). A designer adds support for new information sources or client devices by abstracting and encapsulating messages to and from the information source or client device in a wrapper using a platform-independent, extendible markup language such as XML.
摘要翻译：可扩展信息聚合和显示的方法和装置。该功能通过将系统的组件抽象为使用与平台无关的可扩展标记语言（例如可扩展标记语言（XML））进行通信的各个模块来实现。设计师通过使用与平台无关的可扩展标记语言（例如XML）在包装器中向信息源或客户端设备抽取和封装消息来添加对新信息源或客户端设备的支持。

30. 发明申请

US20050167693A1 Formation of Ohmic contacts in III-nitride light emitting devices 有权
标题翻译：在III族氮化物发光器件中形成欧姆接触
公开(公告)号：US20050167693A1
公开(公告)日：2005-08-04
申请号：US11095854
申请日：2005-03-30
申请人： Werner Goetz , Michael Camras , Changhua Chen , Xiaoping Chen , Gina Christenson , R. Kern , Chihping Kuo , Paul Martin , Daniel Steigerwald
发明人： Werner Goetz , Michael Camras , Changhua Chen , Xiaoping Chen , Gina Christenson , R. Kern , Chihping Kuo , Paul Martin , Daniel Steigerwald
IPC分类号： H01S5/30 , H01L33/32 , H01L33/40 , H01S5/042 , H01S5/323 , H01L21/00 , H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/0425 , H01S5/32341 , H01L2924/00
摘要： P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ω cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
摘要翻译： GaN基发光器件的P型层优化用于形成与金属的欧姆接触。在第一实施例中，在p型导电层和金属接触之间形成电阻率大于或等于约7Ωcm的p型GaN过渡层。在第二实施例中，p型过渡层是任何III-V半导体。在第三实施例中，p型过渡层是超晶格。在第四实施例中，形成具有不同组成和不同浓度的掺杂剂的单一p型层。

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