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1. 发明授权

US08384118B2 LED assembly having maximum metal support for laser lift-off of growth substrate 有权
标题翻译： LED组件具有用于生长衬底的激光剥离的最大金属支撑
公开(公告)号：US08384118B2
公开(公告)日：2013-02-26
申请号：US12767845
申请日：2010-04-27
申请人： Stefano Schiaffino , Daniel A. Steigerwald , Mari Holcomb , Grigoriy Basin , Paul Martin , John Epler
发明人： Stefano Schiaffino , Daniel A. Steigerwald , Mari Holcomb , Grigoriy Basin , Paul Martin , John Epler
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/382 , H01L33/40 , H01L33/62 , H01L2224/73204 , H01L2924/01322 , H01L2924/00
摘要： Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.
摘要翻译：描述了在将LED管芯接合到基座之后，使用激光剥离工艺形成LED结构以去除生长衬底（例如，蓝宝石）的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极，其中电极覆盖LED结构的后表面的至少85％。底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面几乎被电极和底座支撑。也可以使用其它粘合技术。没有使用底层填料。然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

2. 发明授权

US07736945B2 LED assembly having maximum metal support for laser lift-off of growth substrate 有权
标题翻译： LED组件具有用于生长衬底的激光剥离的最大金属支撑
公开(公告)号：US07736945B2
公开(公告)日：2010-06-15
申请号：US11611775
申请日：2006-12-15
申请人： Stefano Schiaffino , Daniel A. Steigerwald , Mari Holcomb , Grigoriy Basin , Paul Martin , John Epler
发明人： Stefano Schiaffino , Daniel A. Steigerwald , Mari Holcomb , Grigoriy Basin , Paul Martin , John Epler
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/382 , H01L33/40 , H01L33/62 , H01L2224/73204 , H01L2924/01322 , H01L2924/00
摘要： Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.
摘要翻译：描述了在将LED管芯接合到基座之后，使用激光剥离工艺形成LED结构以去除生长衬底（例如，蓝宝石）的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极，其中电极覆盖LED结构的后表面的至少85％。底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面几乎被电极和底座支撑。也可以使用其它粘合技术。没有使用底层填料。然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

3. 发明申请

US20080142833A1 Interconnects for semiconductor light emitting devices 审中-公开
公开(公告)号：US20080142833A1
公开(公告)日：2008-06-19
申请号：US12028925
申请日：2008-02-11
申请人： Stefano Schiaffino , Ashim Shatil Haque , Paul S. Martin , Daniel A. Steigerwald , Decai Sun
发明人： Stefano Schiaffino , Ashim Shatil Haque , Paul S. Martin , Daniel A. Steigerwald , Decai Sun
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/0095 , H01L33/20 , H01L33/38 , H01L2224/0603 , H01L2224/06102 , H01L2224/48091 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/3011 , H01L2924/00014
摘要： A semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region and contacts electrically connected to the n-type region and the p-type region is connected to a mount. A metal layer arbitrarily patterned to cover at least 20% of the area of the semiconductor light emitting device is plated on either a metal layer formed on the mount or a metal layer formed on one of the contacts. The plated metal layer may replace other known interconnecting techniques such as stud bumps. The semiconductor light emitting device is physically connected to the mount by causing interdiffusion between the contact surfaces of the metal layers. In some embodiments, a layer of solder is formed over the plated metal layer, and then the semiconductor light emitting device is physically connected to the mount by heating the solder.

4. 发明授权

US07348212B2 Interconnects for semiconductor light emitting devices 有权
标题翻译：互连用于半导体发光器件
公开(公告)号：US07348212B2
公开(公告)日：2008-03-25
申请号：US11226151
申请日：2005-09-13
申请人： Stefano Schiaffino , Ashim Shatil Haque , Paul S. Martin , Daniel A. Steigerwald , Decai Sun
发明人： Stefano Schiaffino , Ashim Shatil Haque , Paul S. Martin , Daniel A. Steigerwald , Decai Sun
IPC分类号： H01L21/00
CPC分类号： H01L33/62 , H01L33/0095 , H01L33/20 , H01L33/38 , H01L2224/0603 , H01L2224/06102 , H01L2224/48091 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/3011 , H01L2924/00014
摘要： A semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region and contacts electrically connected to the n-type region and the p-type region is connected to a mount. A metal layer arbitrarily patterned to cover at least 20% of the area of the semiconductor light emitting device is plated on either a metal layer formed on the mount or a metal layer formed on one of the contacts. The plated metal layer may replace other known interconnecting techniques such as stud bumps. The semiconductor light emitting device is physically connected to the mount by causing interdiffusion between the contact surfaces of the metal layers. In some embodiments, a layer of solder is formed over the plated metal layer, and then the semiconductor light emitting device is physically connected to the mount by heating the solder.
摘要翻译：包括设置在n型区域和p型区域之间的发光层和电连接到n型区域和p型区域的触点的半导体发光器件连接到安装件。任意图案化以覆盖半导体发光器件的面积的至少20％的金属层被镀在形成在安装件上的金属层或形成在其中一个触点上的金属层上。电镀金属层可以替代其他已知的互连技术，例如柱状凸块。半导体发光器件通过引起金属层的接触表面之间的相互扩散而物理连接到安装座。在一些实施例中，在电镀金属层上形成焊料层，然后半导体发光器件通过加热焊料物理连接到安装座。

5. 发明授权

US08471282B2 Passivation for a semiconductor light emitting device 有权
标题翻译：钝化半导体发光器件
公开(公告)号：US08471282B2
公开(公告)日：2013-06-25
申请号：US12795272
申请日：2010-06-07
申请人： Frederic S. Diana , Henry Kwong-Hin Choy , Qingwei Mo , Serge I. Rudaz , Frank L. Wei , Daniel A. Steigerwald
发明人： Frederic S. Diana , Henry Kwong-Hin Choy , Qingwei Mo , Serge I. Rudaz , Frank L. Wei , Daniel A. Steigerwald
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/08 , H01L33/385 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/52 , H01L33/54 , H01L33/56 , H01L2933/0025 , H01L2933/005
摘要： In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.
摘要翻译：在本发明的实施例中，钝化层设置在包括设置在n型区域和p型区域之间的发光层的半导体结构的一侧上。配置成附着到底部填充物的材料设置在半导体结构的蚀刻表面上。

6. 发明申请

US20090250713A1 Reflective Contact for a Semiconductor Light Emitting Device 审中-公开
标题翻译：半导体发光器件的反射触点
公开(公告)号：US20090250713A1
公开(公告)日：2009-10-08
申请号：US12098381
申请日：2008-04-04
申请人： Henry Kwong-Hin Choy , Daniel A. Steigerwald
发明人： Henry Kwong-Hin Choy , Daniel A. Steigerwald
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L29/452 , H01L33/32
摘要： A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A contact is formed on the semiconductor structure, the contact comprising a reflective metal in direct contact with the semiconductor structure and an additional metal or semi-metal disposed within the reflective metal. In some embodiments, the additional metal or semi-metal is a material with higher electronegativity than the reflective metal. The presence of the high electronegativity material in the contact may increase the overall electronegativity of the contact, which may reduce the forward voltage of the device. In some embodiments, an oxygen-gathering material is included in the contact.
摘要翻译：发光器件包括包括设置在n型区域和p型区域之间的发光层的半导体结构。在半导体结构上形成接触，所述触点包括与半导体结构直接接触的反射金属和设置在反射金属内的附加金属或半金属。在一些实施例中，附加金属或半金属是具有比反射金属更高的电负性的材料。接触中高电负性材料的存在可能会增加触头的整体电负性，这可能会降低器件的正向电压。在一些实施例中，接触中包括聚集氧的材料。

7. 发明授权

US06946685B1 Light emitting semiconductor method and device 有权
标题翻译：发光半导体方法及器件
公开(公告)号：US06946685B1
公开(公告)日：2005-09-20
申请号：US09652194
申请日：2000-08-31
申请人： Daniel A. Steigerwald , Michael J. Ludowise , Steven A. Maranowski , Serge L. Rudaz , Jerome C. Bhat
发明人： Daniel A. Steigerwald , Michael J. Ludowise , Steven A. Maranowski , Serge L. Rudaz , Jerome C. Bhat
IPC分类号： H01L29/22 , H01L33/32 , H01L33/40
CPC分类号： H01L33/405 , H01L33/32
摘要： Silver electrode metallization in light emitting devices is subject to electrochemical migration in the presence of moisture and an electric field. Electrochemical migration of the silver metallization to the pn junction of the device results in an alternate shunt path across the junction, which degrades efficiency of the device. In accordance with a form of this invention, a migration barrier is provided for preventing migration of metal from at least one of the electrodes onto the surface of the semiconductor layer with which the electrode is in contact.
摘要翻译：发光器件中的银电极金属化在水分和电场的存在下经历电化学迁移。银金属化物到器件的pn结的电化学迁移导致跨接头的交替分流路径，这降低了器件的效率。根据本发明的形式，提供了一种迁移屏障，用于防止金属从至少一个电极移动到与电极接触的半导体层的表面上。

8. 发明授权

US06946309B2 III-Phosphide and III-Arsenide flip chip light-emitting devices 有权
标题翻译： III型磷化物和III型砷化物倒装芯片发光器件
公开(公告)号：US06946309B2
公开(公告)日：2005-09-20
申请号：US10867936
申请日：2004-06-14
申请人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
发明人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
IPC分类号： H01L33/02 , H01L33/08 , H01L33/14 , H01L33/20 , H01L21/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/14 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/05611 , H01L2924/00014 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684
摘要： A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.
摘要翻译：发光半导体器件包括包括有源区的层叠层。有源区包括选自III-磷化物，III-砷化物及其合金的半导体。对于由有源区域发射的光基本透明的覆盖层设置在堆叠的第一侧上。电耦合以在有源区域施加电压的第一和第二电触点设置在与第一侧相对的堆叠的第二侧上。在一些实施例中，由有源区域发射的较大部分的光通过第一侧离开堆叠而不是通过第二侧。因此，例如，发光半导体器件可以有利地作为倒装芯片安装到基座。

9. 发明授权

US06828596B2 Contacting scheme for large and small area semiconductor light emitting flip chip devices 有权
标题翻译：大面积和小面积半导体发光倒装芯片器件的接触方案
公开(公告)号：US06828596B2
公开(公告)日：2004-12-07
申请号：US10172311
申请日：2002-06-13
申请人： Daniel A. Steigerwald , Jerome C. Bhat , Michael J. Ludowise
发明人： Daniel A. Steigerwald , Jerome C. Bhat , Michael J. Ludowise
IPC分类号： H01L3300
CPC分类号： H01L33/382 , H01L33/08 , H01L33/20 , H01L33/486 , H01L2224/48247
摘要： In accordance with the invention, a light emitting device includes a substrate, a layer of first conductivity type overlying the substrate, a light emitting layer overlying the layer of first conductivity type, and a layer of second conductivity type overlying the light emitting layer. A plurality of vias are formed in the layer of second conductivity type, down to the layer of first conductivity type. The vias may be formed by, for example, etching, ion implantation, or selective growth of the layer of second conductivity type. A set of first contacts electrically contacts the layer of first conductivity type through the vias. A second contact electrically contacts the layer of second conductivity type. In some embodiments, the area of the second contact is at least 75% of the area of the device. In some embodiments, the vias are between 2 and 100 microns wide and spaced between 5 and 1000 microns apart.
摘要翻译：根据本发明，发光器件包括衬底，覆盖衬底的第一导电类型的层，覆盖第一导电类型的层的发光层和覆盖发光层的第二导电类型的层。在第二导电类型的层中形成多个通孔，直到第一导电类型的层。通孔可以通过例如第二导电类型的蚀刻，离子注入或选择性生长来形成。一组第一触点通过通孔与第一导电类型的层电接触。第二接触件电接触第二导电类型的层。在一些实施例中，第二触点的面积为器件面积的至少75％。在一些实施例中，通孔的宽度为2至100微米，间隔5至1000微米。

10. 发明授权

US06730940B1 Enhanced brightness light emitting device spot emitter 有权
标题翻译：增强型亮度发光器件点发射器
公开(公告)号：US06730940B1
公开(公告)日：2004-05-04
申请号：US10283737
申请日：2002-10-29
申请人： Frank M. Steranka , Daniel A. Steigerwald , Matthijs H. Keuper
发明人： Frank M. Steranka , Daniel A. Steigerwald , Matthijs H. Keuper
IPC分类号： H01L3300
CPC分类号： H01L33/58 , H01L33/46 , H01L33/60
摘要： The amount of usefully captured light in an optical system may be increased by concentrating light in a region where it can be collected by the optical system. A light emitting device may include a substrate and a plurality of semiconductor layers. In some embodiments, a reflective material overlies a portion of the substrate and has an opening through which light exits the device. In some embodiments, reflective material overlies a portion of a surface of the semiconductor layers and has an opening through which light exits the device. In some embodiments, a light emitting device includes a transparent member with a first surface and an exit surface. At least one light emitting diode is disposed on the first surface. The transparent member is shaped such that light emitted from the light emitting diode is directed toward the exit surface.
摘要翻译：光学系统中有效捕获的光的量可以通过将光集中在可由光学系统收集的区域中来增加。发光器件可以包括衬底和多个半导体层。在一些实施例中，反射材料覆盖在衬底的一部分上并且具有光从该器件离开的开口。在一些实施例中，反射材料覆盖在半导体层的表面的一部分上并且具有光从该器件离开的开口。在一些实施例中，发光器件包括具有第一表面和出射表面的透明构件。至少一个发光二极管设置在第一表面上。透明构件被成形为使得从发光二极管发射的光朝向出射表面。

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