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    • 23. 发明申请
    • Projection display device
    • 投影显示设备
    • US20070008498A1
    • 2007-01-11
    • US11484408
    • 2006-07-11
    • Shohei MatsuokaMinoru Suzuki
    • Shohei MatsuokaMinoru Suzuki
    • G03B21/22
    • G03B21/10G03B21/625
    • A projection display device is provided with a semi-transparent screen provided on a front surface of the projection display device, an image formation unit that emits light carrying an image to be projected on the screen, and a first reflector and a second reflector provided on an optical path between the image formation unit and the screen, the light emitted by the image formation unit being reflected by the second reflector and then by the first reflector before incident on the screen. The first reflector is arranged such that an angle formed between the first reflector and the screen is equal to or greater than 45 degrees and less than 90 degrees, and the second reflector is arranged such that an angle formed between the second reflector and the screen is an obtuse angle.
    • 投影型显示装置具备设置在投影型显示装置的前表面上的半透明屏幕,发出承载要投影在屏幕上的图像的光的图像形成单元,以及设置在该投影显示装置上的第一反射器和第二反射器 在图像形成单元和屏幕之间的光路,由图像形成单元发射的光被第二反射器反射,然后被第一反射器入射到屏幕上。 第一反射器被布置成使得在第一反射器和屏幕之间形成的角度等于或大于45度且小于90度,并且第二反射器被布置成使得在第二反射器和屏幕之间形成的角度为 钝角。
    • 25. 发明授权
    • System for removing carbon monoxide and method for removing carbon monoxide
    • 一氧化碳除去系统及除去一氧化碳的方法
    • US06913738B1
    • 2005-07-05
    • US09914994
    • 1999-03-05
    • Mitsuaki EchigoMinoru SuzukiOsamu Okada
    • Mitsuaki EchigoMinoru SuzukiOsamu Okada
    • B01J23/40B01J23/755C01B3/38C01B3/58C10K3/04H01M8/04H01M8/06
    • H01M8/0662B01D2257/502C01B3/583C01B3/586C01B2203/044C01B2203/0445C01B2203/047C10K3/04
    • The object of the present invention is to obtain a carbon-monoxide removing technique capable of very effectively reducing/removing carbon monoxide present at one thousand of ppm to several % in a hydrogen-rich treatment-object gas such as a reformed gas obtained by reforming of a fuel such as natural gas, methanol, etc. to a concentration of several tens of ppm (preferably 10 ppm) or lower without excessive loss of hydrogen, even when carbon dioxide, methane are co-existent For accomplishing this object, there are provided two stages of CO removers for removing carbon monoxide from a hydrogen-containing treatment-object gas, the first-stage CO remover removing a portion of the carbon monoxide by methanation thereof through a catalyst reaction, the second-stage CO remover removing the remaining portion of the carbon monoxide mainly by oxidation thereof through a further catalyst reaction involving addition of an oxidizing agent.
    • 本发明的目的是获得一种一氧化碳去除技术,其能够非常有效地减少/除去在富含氢气的处理对象气体中以一千ppm至几%存在的一氧化碳,例如通过重整获得的重整气体 的燃料如天然气,甲醇等至几十ppm(优选10ppm)或更低的浓度,即使在二氧化碳,甲烷共存的情况下,也不会过多地损失氢气。为了实现该目的, 提供了两个阶段的CO去除剂,用于从含氢处理对象气体中除去一氧化碳,第一阶段CO去除剂通过催化剂反应除甲烷化除去一部分一氧化碳,第二阶段CO去除剂除去剩余的 一氧化碳的一部分主要是通过进一步的催化剂反应而氧化,包括加入氧化剂。
    • 27. 发明授权
    • Semiconductor device with surge protective component and method of manufacturing the semiconductor device
    • 具有浪涌保护元件的半导体器件和半导体器件的制造方法
    • US06806510B2
    • 2004-10-19
    • US10014407
    • 2001-12-14
    • Minoru SuzukiSusumu Yoshida
    • Minoru SuzukiSusumu Yoshida
    • H01L2974
    • H01L29/66121H01L29/87
    • In order to provide a reliable surge protective component with a straightforward manufacturing process, first and second buried layers are diffused over the entire inside surfaces of a semiconductor substrate, and first and second base layers are then diffused over the entire inside surfaces of the first and second buried layers. First and second emitter layers are then partially diffused at the inside of the first and second base layers. The peripheries of the first and second emitter layers are then surrounded by first and second moats, the bottoms of which reach the first and second buried layers. A PN junction formed between the first and second base layers and first and second buried layers is then simply a planar junction.
    • 为了提供具有直接制造工艺的可靠的浪涌保护部件,第一和第二掩埋层在半导体衬底的整个内表面上扩散,然后第一和第二基底层在第一和第二衬底的整个内表面上扩散 第二埋层。 然后,第一和第二发射极层在第一和第二基极层的内部部分地扩散。 然后,第一和第二发射极层的周边被第一和第二护城河围绕,第一和第二护城河的底部到达第一和第二掩埋层。 形成在第一和第二基底层与第一和第二掩埋层之间的PN结就是简单的平面结。