专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20080148714A1 Exhaust control system for an internal combustion engine 有权
标题翻译：内燃机排气控制系统
公开(公告)号：US20080148714A1
公开(公告)日：2008-06-26
申请号：US12002244
申请日：2007-12-12
申请人： Nobuhiro Komatsu , Norio Suzuki
发明人： Nobuhiro Komatsu , Norio Suzuki
IPC分类号： F01N9/00
CPC分类号： F02D41/028 , F01N3/0814 , F01N13/009 , F02D41/0235 , F02D41/405 , F02D2041/0265 , F02D2200/0802
摘要： An exhaust control system for an internal combustion engine provided with an exhaust gas processing device and a NOx purifying catalyst which are arranged in series in an exhaust system, comprises: a first temperature detector for detecting a temperature of the exhaust gas processing device; a second temperature detector for detecting a temperature of the NOx purifying catalyst; a control means for controlling an exhaust temperature to conduct a regeneration process for removing sulfur contents trapped by the NOx purifying catalyst; and a control mode selection means for selecting one of a plurality of exhaust temperature control modes according to a relationship between an output from the first temperature detector and an output from the second temperature detector, wherein the control means conducts exhaust temperature control according to the control mode selected by the control mode selection means.
摘要翻译：一种内燃机的排气控制系统，具有排气系统中串联配置的排气处理装置和NOx净化催化剂，具备：检测废气处理装置的温度的第一温度检测器; 用于检测NOx净化催化剂的温度的第二温度检测器; 用于控制排气温度以进行用于除去由所述NOx净化催化剂捕获的硫含量的再生处理的控制装置; 以及控制模式选择装置，用于根据来自第一温度检测器的输出和来自第二温度检测器的输出之间的关系来选择多个排气温度控制模式中的一个，其中控制装置根据控制进行排气温度控制模式由控制模式选择装置选择。

22. 发明申请

US20080067051A1 RESIN MOLDED BODY, RECEIVING JIG AND METHOD FOR MANUFACTURING PUSH BUTTON SWITCH MEMBER 失效
标题翻译：树脂模制体，接收夹头和制造按钮开关构件的方法
公开(公告)号：US20080067051A1
公开(公告)日：2008-03-20
申请号：US11853512
申请日：2007-09-11
申请人： Tomohiro NAKAYAMA , Norio Suzuki
发明人： Tomohiro NAKAYAMA , Norio Suzuki
IPC分类号： H01H13/14 , H01H11/00
CPC分类号： H01H13/705 , B29C45/0055 , B29C45/382 , B29C2045/0086 , B29L2031/466 , H01H13/88 , H01H2219/064 , H01H2221/07 , H01H2229/036 , H01H2229/044 , Y10T29/49105 , Y10T29/53248
摘要： To separate resin molded parts that are used for a push button switch member with less light leakage from the side faces and less trouble in key operation, easily, a resin molded body comprises one or more resin molded parts for a push button switch member, a frame surrounding the outside of the resin molded parts, one or more gates connecting a plurality of the resin molded parts each other or the resin molded part to the frame and one or more runners crossing the longitudinal direction of the gates, wherein the gates are connected at the back faces of the resin molded parts not to be coated with light shielding paint, and wherein the runners are connected to the gates on the same surfaces as the resin molded parts are connected to and are connecting the opposing sides of the frame.
摘要翻译：为了分离用于按钮开关部件的树脂模制部件，具有较少的侧面漏光和较少的按键操作麻烦，树脂成型体容易地包括用于按钮开关部件的一个或多个树脂模制部件，围绕树脂模制部件的外侧的框架，将多个树脂模制部件彼此连接的一个或多个浇口或与框架连接的树脂模制部件以及与浇口的纵向方向交叉的一个或多个浇道，其中，浇口连接在未被遮光涂料涂布的树脂成形部件的背面，在与树脂成形部连接并连接框架的相对侧的同一表面上连接有浇口。

23. 发明申请

US20080039975A1 Sulfur purge control device for an internal combustion engine 失效
标题翻译：用于内燃机的硫吹扫控制装置
公开(公告)号：US20080039975A1
公开(公告)日：2008-02-14
申请号：US11882406
申请日：2007-08-01
申请人： Hisao Haga , Norio Suzuki , Katsuji Wada
发明人： Hisao Haga , Norio Suzuki , Katsuji Wada
IPC分类号： F02D41/30 , F01N3/18
CPC分类号： F02D41/0285 , F01N3/0814 , F01N3/0821 , F01N3/0885 , F01N2560/025 , F01N2560/06 , F02B37/00 , F02D41/0047 , F02D41/405 , F02D2200/0802 , Y02T10/44
摘要： Provided is a control device for an internal combustion engine that can execute a sulfur purge in a favorable manner under all conditions without complicating the control action or the engine structure. The process comprises detecting a temperature of the NOx catalytic converter, detecting an exhaust air fuel ratio in the catalytic converter, computing a target exhaust air fuel ratio according to a detected temperature of the NOx catalytic converter, and controlling a fuel injection valve so as to make an actual exhaust fuel ratio agree with the target exhaust air fuel ratio. If the temperature of the NOx catalytic converter is not high enough to enable a sulfur purge, a temperature increase control is executed to increase the temperature of the NOx catalytic converter by suitably changing various engine parameters.
摘要翻译：提供一种用于内燃机的控制装置，其可以在所有条件下以良好的方式执行硫吹扫，而不会使控制动作或发动机结构复杂化。该方法包括检测NOx催化转化器的温度，检测催化转化器中的排气空燃比，根据NOx催化转化器的检测温度计算目标排气空燃比，并控制燃料喷射阀，以便使实际的排气燃料比与目标排气空燃比一致。如果NOx催化转化器的温度不足以实现硫吹扫，则通过适当地改变各种发动机参数来执行升温控制以增加NOx催化转化器的温度。

24. 发明申请

US20080028749A1 Sulfur purge control device for an internal combustion engine 有权
标题翻译：用于内燃机的硫吹扫控制装置
公开(公告)号：US20080028749A1
公开(公告)日：2008-02-07
申请号：US11882255
申请日：2007-07-31
申请人： Hisao Haga , Norio Suzuki , Katsuji Wada , Nobuhiro Komatsu
发明人： Hisao Haga , Norio Suzuki , Katsuji Wada , Nobuhiro Komatsu
IPC分类号： F01N3/20
CPC分类号： F02D41/0285 , F01N3/0885 , F01N13/009 , F01N13/0097 , F02B31/06 , F02B2275/14 , F02D41/1441 , F02D2200/0818 , F02M26/05 , F02M26/15 , F02M26/25 , Y02T10/20
摘要： In a control device for an internal combustion engine provided with a NOX catalytic converter in an exhaust passage thereof, the progress of sulfur purging is computed from the consumption of reducing agent contained in the exhaust gas in the NOX catalytic converter. This computation may be based on the air fuel ratio of exhaust gas upstream of the NOX catalytic converter and the estimated consumption of the reducing agent contained in the exhaust gas or on the difference between the air fuel ratios of exhaust gas upstream and downstream of the NOX catalytic converter. In either case, the accuracy can be improved by taking into account the space velocity of the exhaust gas.
摘要翻译：在其排气通路中设置有NO x催化转化器的内燃机的控制装置中，根据NO x催化转化器的废气中所含的还原剂的消耗量计算出硫吹扫的进度。该计算可以基于NO x催化转化器上游排气的空燃比和废气中所含还原剂的估计消耗量，或NOX上游和下游排气的空燃比之差催化转化器。在这两种情况下，通过考虑废气的空间速度可以提高精度。

25. 发明授权

US07119406B2 Semiconductor integrated circuit device having deposited layer for gate insulation 有权
公开(公告)号：US07119406B2
公开(公告)日：2006-10-10
申请号：US11178375
申请日：2005-07-12
申请人： Shoji Shukuri , Norio Suzuki , Yasuhiro Taniguchi
发明人： Shoji Shukuri , Norio Suzuki , Yasuhiro Taniguchi
IPC分类号： H01L29/76 , H01L29/94 , H01L31/62 , H01L31/113 , H01L31/119
CPC分类号： H01L21/823456 , H01L21/28185 , H01L21/28194 , H01L21/823462 , H01L21/823481 , H01L21/8238 , H01L21/823857 , H01L21/823878 , H01L27/0922 , H01L27/105 , H01L27/1052 , H01L27/10873 , H01L27/10894 , H01L27/115 , H01L27/11526 , H01L27/11546 , H01L29/513 , H01L29/6659 , H01L29/7833
摘要： A method for manufacturing a semiconductor integrated circuit device including a first field effect transistor having a gate insulating film formed over a first element forming region of a main surface of a semiconductor substrate; and a second field effect transistor having a gate insulating film formed over a second element forming region of the main surface of the semiconductor substrate and made thinner than the gate insulating film of the first field effect transistor. The method comprises the steps of forming a thermally oxidized film over a first element forming region and a second element forming region of the main surface of the semiconductor substrate; forming a deposited film over the main surface of the semiconductor substrate including said thermally oxidized film; removing the deposited film and said thermally oxidized film from over the second element forming region; and forming a thermally oxidized film over the second element forming region to form a gate insulating film individually over the first element forming region and the second element forming region.

26. 发明申请

US20050196935A1 Semiconductor device and process for producing the same 有权
公开(公告)号：US20050196935A1
公开(公告)日：2005-09-08
申请号：US11108827
申请日：2005-04-19
申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
发明人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
IPC分类号： H01L21/31 , H01L21/76 , H01L21/762
CPC分类号： H01L21/76232 , H01L21/76235 , H01L29/78
摘要： A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

27. 发明申请

US20050178109A1 Exhaust gas purifying apparatus for internal combustion engine 失效
标题翻译：内燃机用废气净化装置
公开(公告)号：US20050178109A1
公开(公告)日：2005-08-18
申请号：US11046817
申请日：2005-02-01
申请人： Katsuji Wada , Hiroshi Ohno , Norio Suzuki , Tomoko Morita
发明人： Katsuji Wada , Hiroshi Ohno , Norio Suzuki , Tomoko Morita
IPC分类号： F01N3/24 , B01D53/94 , F01N3/08 , F01N3/20 , F01N9/00 , F02B37/00 , F02D41/02 , F02D41/04 , F02M25/07 , F01N3/00 , F01N3/10
CPC分类号： F01N3/208 , F01N3/2073 , F01N9/005 , F01N2240/25 , F01N2250/12 , F01N2370/04 , F01N2430/06 , F01N2570/00 , F01N2570/14 , F01N2570/18 , F01N2610/03 , F01N2900/08 , F01N2900/1402 , F01N2900/1602 , F01N2900/1622 , F02B31/085 , F02B37/00 , F02D41/0235 , F02M26/05 , F02M26/20 , F02M26/48 , Y02A50/2325 , Y02A50/2344 , Y02T10/24 , Y02T10/47
摘要： An exhaust gas purifying apparatus for an internal combustion engine having an exhaust system. The apparatus includes a NOx purifying device provided in the exhaust system. This device removes NOx from exhaust gases when a concentration of oxygen in the exhaust gases is higher than a concentration of reducing components in the exhaust gases; generates ammonia and retains the generated ammonia when the concentration of reducing components in the inflowing exhaust gases is higher than the concentration of oxygen; and purifies NOx with the retained ammonia when the concentration of reducing components in the inflowing exhaust gases is lower than the concentration of oxygen. A residual amount of ammonia retained in the NOx purifying device is estimated. The concentration of reducing components in the exhaust gases is switched with respect to the concentration of oxygen according to the estimated residual amount.
摘要翻译：一种具有排气系统的内燃机的废气净化装置。该设备包括设置在排气系统中的NOx净化装置。当废气中的氧浓度高于废气中还原成分的浓度时，该装置从废气中除去NOx; 当流入的废气中的还原成分的浓度高于氧浓度时，产生氨并保留产生的氨; 并且当流入的废气中的还原成分的浓度低于氧浓度时，用残留的氨净化NOx。估计残留在NOx净化装置中的氨的残留量。根据估计的剩余量，排气中的还原成分的浓度相对于氧浓度而切换。

28. 发明申请

US20050148155A1 Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件和半导体集成电路器件的制造方法
公开(公告)号：US20050148155A1
公开(公告)日：2005-07-07
申请号：US11055745
申请日：2005-02-11
申请人： Hidenori Sato , Norio Suzuki , Akira Takamatsu , Hiroyuki Maruyama , Takeshi Saikawa , Katsuhiko Hotta , Hiroyuki Ichizoe
发明人： Hidenori Sato , Norio Suzuki , Akira Takamatsu , Hiroyuki Maruyama , Takeshi Saikawa , Katsuhiko Hotta , Hiroyuki Ichizoe
IPC分类号： H01L21/76 , G02B17/00 , G02B21/00 , G02B23/00 , H01L21/302 , H01L21/312 , H01L21/316 , H01L21/461 , H01L21/762 , H01L21/8239 , H01L21/8242 , H01L27/02 , H01L27/10 , H01L27/105 , H01L27/108
CPC分类号： H01L21/76229 , H01L21/02271 , H01L21/02282 , H01L21/3125 , H01L21/31612 , H01L27/0211 , H01L27/105 , H01L27/1052 , H01L27/10814 , H01L27/10844 , H01L27/10894
摘要： A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating film deposited by a coating method, filling a remaining depth portion of the isolation trench into which the first insulating film is filled with a second insulating film, then forming a plurality of patterns on the semiconductor substrate, filling a trench forming between the plurality of patterns up to predetermined middle position in a trench depth direction with a third insulating film deposited by a coating method, and filling a remaining portion of the trench into which the third insulating film is filled with a fourth insulating film that is more difficult to etch than the third insulating film. The method may also include the step of forming dummy patterns in a relatively large isolation region of isolation regions with relatively different planar dimensions before the first insulating film is deposited
摘要翻译：一种制造半导体集成电路器件的方法包括以下步骤：在半导体衬底的隔离区域中形成隔离沟槽，通过涂覆方法沉积的第一绝缘膜将隔离沟填充到其深度方向上的预定中间位置，用第二绝缘膜填充绝缘沟槽的剩余深度部分，然后在半导体衬底上形成多个图案，在多个图案之间填充形成沟槽直到预定中间位置的沟槽沟槽深度方向与通过涂覆方法沉积的第三绝缘膜，并且填充第三绝缘膜填充有比第三绝缘膜更难蚀刻的第四绝缘膜的沟槽的剩余部分。该方法还可以包括在第一绝缘膜沉积之前在具有相对不同的平面尺寸的隔离区的相对较大的隔离区域中形成虚拟图案的步骤

29. 发明授权

US06881646B2 Semiconductor device and process for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06881646B2
公开(公告)日：2005-04-19
申请号：US10392916
申请日：2003-03-21
申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
发明人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
IPC分类号： H01L21/31 , H01L21/76 , H01L21/762
CPC分类号： H01L21/76232 , H01L21/76235 , H01L29/78
摘要： A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.
摘要翻译：一种制造半导体器件的方法，该半导体器件具有高度可靠的凹槽隔离结构，其具有在凹槽上边缘处形成的所需曲率半径，并且不形成任何步骤。通过减小半导体衬底上的元件隔离槽的槽上边缘周围的应力产生，从而优化元件隔离槽的形状并使器件更精细并提高器件电气特性来制造器件。

30. 发明授权

US06204184B1 Method of manufacturing semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06204184B1
公开(公告)日：2001-03-20
申请号：US09276969
申请日：1999-03-26
申请人： Akio Nishida , Kikuo Kusukawa , Toshiaki Yamanaka , Natsuki Yokoyama , Shinichiro Kimura , Norio Suzuki , Osamu Tsuchiya , Atsushi Ogishima
发明人： Akio Nishida , Kikuo Kusukawa , Toshiaki Yamanaka , Natsuki Yokoyama , Shinichiro Kimura , Norio Suzuki , Osamu Tsuchiya , Atsushi Ogishima
IPC分类号： H01L21302
CPC分类号： H01L27/10894 , H01L21/31053 , H01L21/76229 , H01L21/823437 , H01L21/823481 , H01L27/10814
摘要： In a method of manufacturing a semiconductor device having a memory mat portion in which an active region and a field region are formed densely, after a polishing stopper film is deposited on a semiconductor substrate, there are formed grooves by etching a polishing stopper film of a field region and the semiconductor substrate. Then, after an insulating film is deposited so as to fill the grooves, the insulating film is partly removed from the memory mat portion by etching. Under this state, the insulating film is chemically mechanically polished until the polishing stopper film is exposed. The film thickness of the polishing stopper film on the active region can be reduced, and an electrical element isolation characteristic of the field region can be improved. At the same time, upon chemical mechanical polishing, a silicon substrate can be prevented from being exposed at the central portion of the memory mat portion and the insulating film can be prevented from being left on the silicon nitride film near the outer periphery, thereby making it possible to form elements having uniform electrical characteristics on all active regions of the memory mat portion.
摘要翻译：在制造半导体器件的方法中，其具有密集形成有源区和场区的存储垫部分，在半导体衬底上沉积抛光阻挡膜之后，通过蚀刻抛光阻挡膜形成凹槽场区域和半导体衬底。然后，在沉积绝缘膜以填充凹槽之后，通过蚀刻将绝缘膜部分地从存储垫部分除去。在这种状态下，绝缘膜被化学机械抛光直到抛光阻挡膜露出。能够减少有源区域上的研磨停止膜的膜厚，能够提高场区域的电气元件隔离特性。同时，在化学机械抛光时，可以防止硅衬底暴露在存储垫部分的中心部分，并且可以防止绝缘膜留在靠近外周的氮化硅膜上，从而使可以在存储垫部分的所有有效区域上形成具有均匀电特性的元件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式