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    • 3. 发明授权
    • Glasses for image viewing
    • 用于图像查看的眼镜
    • US08491116B2
    • 2013-07-23
    • US13528133
    • 2012-06-20
    • Hiroshi OhnoTatsuya SakataMasamichi OkadaNobuyuki HaraNaoto Shimizu
    • Hiroshi OhnoTatsuya SakataMasamichi OkadaNobuyuki HaraNaoto Shimizu
    • G02C7/12
    • G02B27/0176G02B2027/0178G02C5/2263G02C2200/18
    • Glasses of present invention includes a frame portion which includes an opening through which an image displayed on a displaying device is viewed with bilateral eyes, a temple portion configured to be capable of being opened and closed against the frame portion and which includes spring material capable of being inelastically deformed, a movable portion arranged at one of the temple portion and the frame portion and which contacts to the other of the temple portion and the frame portion when the temple portion is opened to the maximum while the contacting position is movable, and a contacting portion which is arranged at the other of the temple portion and the frame portion and which contacts to the movable portion when the temple portion is opened to the maximum and varies the maximum open amount of the temple portion corresponding to movement of the movable portion.
    • 本发明的眼镜包括框架部分,其包括用双眼来观看显示装置上显示的图像的开口,被配置为能够相对于框架部分打开和关闭的镜腿部分,并且包括能够 当所述镜腿部在所述接触位置是可移动的时将所述镜腿部分最大打开时,所述可移动部分布置在所述镜腿部分和所述框架部分中的一个处,并且与所述镜腿部分和所述框架部分中的另一个接触, 接触部分,其布置在所述镜腿部分和所述框架部分中的另一个处,并且当所述镜腿部分最大打开时改变与所述可动部分的移动相对应的所述镜腿部分的最大打开量。
    • 5. 发明申请
    • SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    • 半导体器件制造方法
    • US20120178269A1
    • 2012-07-12
    • US13422153
    • 2012-03-16
    • Hiroshi OHNO
    • Hiroshi OHNO
    • H01L21/268
    • H01L27/0207H01L21/268
    • One embodiment of the present invention provides a semiconductor device manufacturing method, including: performing a laser spike annealing, by irradiating light, whose wavelength is 10 μm to 11 μm, onto a semiconductor substrate including: an active area; a circuit pattern; and a dummy pattern formed at a position, whose distance from an end of the active area is equal to or more than 10 μm and equal to or less than 11 μm, at a pitch equal to or more than 10 nm and equal to or less than 510 nm, while setting an angle formed between an arrangement direction of the dummy pattern and a projection direction of the light to be equal to or more than 0° and equal to or less than 30°.
    • 本发明的一个实施例提供一种半导体器件制造方法,包括:通过将波长为10μm至11μm的光照射到包括有源区的半导体衬底上来进行激光尖峰退火; 电路图案 以及形成在距离有源区域的端部的距离等于或大于10μm并且等于或小于11μm的位置的虚拟图案,其间距等于或大于10nm并且等于或小于 同时设置在虚拟图案的布置方向和光的投射方向之间形成的角度等于或大于0°且等于或小于30°的角度。
    • 8. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US07924897B2
    • 2011-04-12
    • US11889818
    • 2007-08-16
    • Hiroshi Ohno
    • Hiroshi Ohno
    • H01S5/00
    • H01S5/34333B82Y20/00H01S5/0201H01S5/0202H01S5/22
    • A semiconductor laser device includes a chip obtained from a substrate and a semiconductor multi-layer formed on the substrate. The semiconductor multi-layer is formed from a plurality of semiconductor layers of a semiconductor material having a hexagonal structure, and includes a stripe-shaped wave guide portion. The chip includes two chip end facets that extend in a direction crossing an extending direction of the wave guide portion. Each of regions on both sides of the wave guide portion in at least one of the chip end facets has a notch portion formed by notching a part of the chip, and the notch portion exposes a first wall surface connecting to the chip end facet and a second wall surface connecting to the chip side facet. An angle between an extending direction of the first wall surface in at least one of the two notch portions and an extending direction of the cleavage facet is in a range of about 10 degrees to about 40 degrees.
    • 半导体激光器件包括从衬底获得的芯片和形成在衬底上的半导体多层。 半导体多层由具有六边形结构的半导体材料的多个半导体层形成,并且包括条形波导部。 芯片包括沿与波导部分的延伸方向交叉的方向延伸的两个芯片端面。 在至少一个芯片端面中的波导部分的两侧上的每个区域具有通过切割芯片的一部分而形成的切口部分,并且切口部分暴露连接到芯片端面的第一壁表面和 第二壁面连接到芯片侧面。 两个切口部分中的至少一个中的第一壁表面的延伸方向与解理面的延伸方向之间的角度在约10度至约40度的范围内。