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    • 21. 发明授权
    • DC stabilized power supply
    • 直流稳压电源
    • US06784648B2
    • 2004-08-31
    • US10657071
    • 2003-09-09
    • Atsushi MitamuraHideyuki Ono
    • Atsushi MitamuraHideyuki Ono
    • G05F140
    • H02M3/157H02M3/156
    • A switching signal generator for a switching power supply employing a DC-DC modulator has an adder, an integrator and a quantizer. A gate driver circuit is provided upstream of a power switch element and receives a quantizer output. By feeding back a gate driver circuit output to the adder of the &Dgr;&Sgr;-modulator, a large phase margin is obtained at a high-frequency switching. The switching signal generator for the &Dgr;&Sgr;-modulation type switching power supply has an improved direct-current transmission linearity characteristic relative to direct-current input, and that is stably controllable and of high efficiency. Furthermore, a DC-DC converter has an adder, an integrator and a quantizer, the integrator having a mechanism for adjusting its gain. The gain-adjusting mechanism receives a signal from a current flowing internally of the DC-DC converter, a voltage internally of the converter, or a converter output voltage to control gain of the integrator so that the amplitude of output voltage of the integrator is not saturated and a comparator is capable of high-speed operation, a &Dgr;&Sgr;-modulation type DC-DC converter is provided that is unlikely to undergo oscillation especially at a high sampling frequency, and that produces a stable output voltage.
    • 用于采用DC-DC调制器的开关电源的开关信号发生器具有加法器,积分器和量化器。 栅极驱动器电路设置在电源开关元件的上游并接收量化器输出。 通过将输出的栅极驱动电路反馈到Delta-Σ调制器的加法器,在高频​​切换时获得较大的相位余量。 用于DeltaSigma调制型开关电源的开关信号发生器相对于直流输入具有改进的直流传输线性特性,并且是稳定可控的并且具有高效率。 此外,DC-DC转换器具有加法器,积分器和量化器,该积分器具有用于调整其增益的机构。 增益调整机构从DC-DC转换器内部流过的电流,转换器内部的电压或转换器输出电压接收信号,以控制积分器的增益,使得积分器的输出电压的幅度不 并且比较器能够高速操作,提供了不太可能经历振荡的Delta-Σ调制型DC-DC转换器,特别是在高采样频率下,并且产生稳定的输出电压。
    • 24. 发明授权
    • Gate protection diode for high-frequency power amplifier
    • 门极保护二极管用于高频功率放大器
    • US08669610B2
    • 2014-03-11
    • US13646079
    • 2012-10-05
    • Hideyuki OnoTetsuya Iida
    • Hideyuki OnoTetsuya Iida
    • H01L29/68
    • H01L27/0629H01L27/0255H01L29/0692H01L29/4175H01L29/66121H01L29/66659H01L29/7835H01L29/861H01L29/8611H03F1/523H03F3/195H03F2200/444
    • A high-frequency power amplifier of the type to be mounted in an RF module for mobile phones having high-frequency power field effect transistors and gate protective diodes which are coupled between the gates and the sources of the high-frequency power field effect transistors. The gate protective diodes have an n type region formed over the main surface of a p type epitaxial layer, a first p type region formed at the center of the main surface of the n type region, a second p type region formed over the main surface of the epitaxial layer around the n type region from the periphery of the main surface of the n type region, and p+ type buried layers for coupling the second p type region to a substrate body. The distance between the end portions of the p+ type buried layers and the n+ type region is 7 μm or more.
    • 一种高频功率放大器,其类型安装在具有高频功率场效应晶体管和栅极保护二极管的手机的RF模块中,高频功率场效应晶体管和栅极保护二极管耦合在高频功率场效应晶体管的栅极和源极之间。 栅极保护二极管具有形成在p型外延层的主表面上的n型区域,形成在n型区域的主表面中心的第一p型区域,形成在n型区域的主表面上的第二p型区域 从n型区域的主表面周围的n型区域周围的外延层和用于将第二p型区域耦合到衬底本体的p +型掩埋层。 p +型掩埋层和n +型区域的端部之间的距离为7μm以上。