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21. 发明授权

US5494521A Apparatus and method for vapor growth 失效
标题翻译：气相生长装置和方法
公开(公告)号：US5494521A
公开(公告)日：1996-02-27
申请号：US218389
申请日：1994-03-25
申请人： Nobuyuki Otsuka , Yasushi Matsui
发明人： Nobuyuki Otsuka , Yasushi Matsui
IPC分类号： C23C16/44 , C23C16/455 , C30B25/14 , C23C16/52
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45561 , C30B25/14
摘要： Herein disclosed is a vapor growth system, in which the number of dummy lines is reduced to decrease the number of lines led into a valve system, thereby enabling thin film growth having a good interfacial steepleness. The system comprising gas supplying lines A70, B71 and C72, which are made up of AsH.sub.3 process gas lines A62, B65, C68 and balance lines A61, B64 and C67, respectively. The balance lines A61, B64 and C67 contributes equalization of products of the viscosity and the flow rate in the gas supplying lines A70, B71 and C72, and the dummy line 60. Only when AsH.sub.3 (A), AsH.sub.3 (B) and AsH.sub.3 gases are not fed upon formation of the film growth, the dummy line 60 is connected to the main line. Whereby, the system is free from pressure fluctuation of the gas in the main line, with an arrangement of even a single dummy line.
摘要翻译：这里公开了一种蒸气生长系统，其中虚线的数量减少以减少引入阀系统的管线数量，从而实现具有良好界面陡峭性的薄膜生长。该系统包括由AsH 3工艺气体管线A62，B65，C68和余量管线A61，B64和C67构成的气体供应管线A70，B71和C72。平衡线A61，B64和C67有助于气体供给管线A70，B71和C72以及虚拟管线60中的粘度和流量的乘积的均衡。只有当AsH 3（A），AsH 3（B）和AsH 3气体在膜生长形成时不进料，虚线60连接到主线。因此，该系统在主线中没有气体的压力波动，甚至布置了单个虚拟线。

22. 发明授权

US5438952A Method of growing a semiconductor layer and a fabrication method of a semiconductor device using such a semiconductor layer 失效
标题翻译：使用这种半导体层生长半导体层的方法和半导体器件的制造方法
公开(公告)号：US5438952A
公开(公告)日：1995-08-08
申请号：US189147
申请日：1994-01-31
申请人： Nobuyuki Otsuka
发明人： Nobuyuki Otsuka
IPC分类号： H01L21/203 , C30B25/02 , H01L21/205 , H01L21/338 , H01L21/363 , H01L29/778 , H01L29/812 , H01L33/06 , H01L33/28 , H01L33/30 , H01L33/34 , H01S5/00
CPC分类号： C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/0262
摘要： A method of fabricating a compound semiconductor device includes the steps of supplying an amine-adduct of a compound that contains a constituent element of a crystal layer that forms the semiconductor device, to a substrate on which the semiconductor device is formed, as a source material of the crystal layer, decomposing the amine-adduct in the vicinity of the substrate such that the constituent element is released, and depositing the constituent element on the substrate to cause a growth of the crystal layer on the substrate.
摘要翻译：一种制备化合物半导体器件的方法包括以下步骤：将含有形成半导体器件的晶体层的构成元素的化合物的胺加合物作为源材料提供给形成有半导体器件的基板的结晶层，分解基板附近的胺加合物使得构成元素被释放，并将构成元素沉积在基板上，以使晶体层在基板上生长。

23. 发明申请

US20050142682A1 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device 有权
公开(公告)号：US20050142682A1
公开(公告)日：2005-06-30
申请号：US11063533
申请日：2005-02-24
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01S5/30 , H01L21/20 , H01L21/205 , H01L33/00 , H01L33/32 , H01S5/323 , H01S5/343 , H01L21/00 , H01L21/336
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/0265 , H01L33/32 , H01S5/22 , H01S5/3063 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

24. 发明授权

US6110756A Method for producing semiconductor laser 有权
标题翻译：半导体激光器的制造方法
公开(公告)号：US6110756A
公开(公告)日：2000-08-29
申请号：US132078
申请日：1998-08-10
申请人： Nobuyuki Otsuka , Masahiro Kitoh , Masato Ishino , Yasushi Matsui
发明人： Nobuyuki Otsuka , Masahiro Kitoh , Masato Ishino , Yasushi Matsui
IPC分类号： H01L29/15 , H01S5/22 , H01S5/227 , H01S5/343 , H01L21/20
CPC分类号： B82Y20/00 , H01L29/155 , H01S5/227 , H01S5/2205 , H01S5/2224 , H01S5/2226 , H01S5/2275 , H01S5/34306 , H01S5/34313 , H01S5/3434 , Y10S148/095
摘要： The semiconductor laser of the invention includes: a semiconductor substrate of a first conductivity type; a stripe-shaped multilayer structure, formed on the semiconductor substrate, the stripe-shaped multilayer structure including an active layer; and a current blocking portion formed on the semiconductor substrate on both sides of the stripe-shaped multilayer structure, wherein the current blocking portion has a first current blocking layer of a second conductivity type, and a second current blocking layer of the first conductivity type formed on the first current blocking layer, the first current blocking layer includes a low-concentration region having a relatively low concentration of an impurity of the second conductivity type, and a high-concentration region having an impurity concentration which is higher than that of the low-concentration region, and the low-concentration region is provided at a position closer to the stripe-shaped multilayer structure than the high-concentration region.
摘要翻译：本发明的半导体激光器包括：第一导电类型的半导体衬底; 形成在所述半导体衬底上的条形多层结构，所述条形多层结构包括有源层; 以及在所述条形多层结构的两侧形成在所述半导体衬底上的电流阻挡部分，其中所述电流阻挡部分具有第二导电类型的第一电流阻挡层和形成所述第一导电类型的第二电流阻挡层在第一电流阻挡层上，第一电流阻挡层包括具有相对低浓度的第二导电类型的杂质的低浓度区域和具有高于低浓度杂质浓度的高浓度区域浓度区域，并且低浓度区域设置在比高浓度区域更靠近条形多层结构的位置。

25. 发明授权

US5308433A Apparatus and method for vapor growth 失效
标题翻译：气相生长装置和方法
公开(公告)号：US5308433A
公开(公告)日：1994-05-03
申请号：US865426
申请日：1992-04-09
申请人： Nobuyuki Otsuka , Yasushi Matsui
发明人： Nobuyuki Otsuka , Yasushi Matsui
IPC分类号： C23C16/44 , C23C16/455 , C30B25/14
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45561 , C30B25/14
摘要： Herein disclosed is a vapor growth system, in which the number of dummy lines is reduced to decrease the number of lines led into a valve system, thereby enabling thin film growth having a good interfacial steepleness. The system comprising gas supplying lines A70, B71 and C72, which are made up of AsH.sub.3 process gas lines A62, B65, C68 and and balance lines A61, B64 and C67, respectively. The balance lines A61, B64 and C.sub.67 contributes equalization of products of the viscosity and the flow rate in the gas supplying lines A70, B71 and C72, and the dummy line 60. Only when AsH.sub.3 (A), AsH.sub.3 (B) and AsH.sub.3 gases are not fed upon formation of the film growth, the dummy line 60 is connected to the main line. Whereby, the system is free from pressure fluctuation of the gas in the main line, with an arrangement of even a single dummy line.
摘要翻译：这里公开了一种蒸气生长系统，其中虚线的数量减少以减少引入阀系统的管线数量，从而实现具有良好界面陡峭性的薄膜生长。该系统包括由AsH3工艺气体管线A62，B65，C68和余量管线A61，B64和C67组成的气体供应管线A70，B71和C72。平衡线A61，B64和C67有助于气体供给管线A70，B71和C72以及虚拟管线60中的粘度和流量的乘积的均衡。只有当AsH 3（A），AsH 3（B）和AsH 3气体在膜生长形成时不进料，虚线60连接到主线。因此，该系统在主线中没有气体的压力波动，甚至布置了单个虚拟线。

26. 发明授权

US4689979A Pressing method and punch and die press for the same 失效
标题翻译：冲压方法和冲压模压机相同
公开(公告)号：US4689979A
公开(公告)日：1987-09-01
申请号：US684018
申请日：1984-12-20
申请人： Nobuyuki Otsuka , Atsuo Kasuya , Yusho Nakayama , Masayuki Kumashiro , Tamio Furuya , Shigeo Kaiho
发明人： Nobuyuki Otsuka , Atsuo Kasuya , Yusho Nakayama , Masayuki Kumashiro , Tamio Furuya , Shigeo Kaiho
IPC分类号： B21D22/20 , B21D22/22 , B21D22/10
CPC分类号： B21D22/22 , B21D22/205
摘要： A method of pressing a blank comprises the steps of pressing the blank between a die assembly having a cavity with a highly viscous substance contained therein and a punch, inserting the punch into the cavity to increase a pressure of the highly viscous substance in the cavity, and pressing the blank against a surface of the punch under the pressure of the highly viscous substance. The pressing method can form pressed product of complex shape highly accurately and free from cracks, wrinkles, or other damages. There is also disclosed a punch and die press suitable for effecting the abovesaid pressing method.
摘要翻译：挤压坯料的方法包括以下步骤：在具有空腔的模具组件与其中容纳的高粘度物质之间挤压坯料和冲头，将冲头插入空腔中以增加空腔中的高粘度物质的压力，并在高粘度物质的压力下将坯料压靠冲头的表面。压制方法可以高精度地形成复杂形状的压制品，没有裂纹，皱纹或其他损坏。还公开了适用于上述压制方法的冲压模压机。

27. 发明申请

US20080293247A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080293247A1
公开(公告)日：2008-11-27
申请号：US12178151
申请日：2008-07-23
申请人： Akira Furuya , Nobuyuki Otsuka , Hiroshi Okamura , Shinichi Ogawa
发明人： Akira Furuya , Nobuyuki Otsuka , Hiroshi Okamura , Shinichi Ogawa
IPC分类号： H01L21/768
CPC分类号： H01L21/022 , H01L21/02123 , H01L21/02175 , H01L21/02337 , H01L21/0234 , H01L21/318 , H01L21/3185 , H01L21/76846 , H01L21/76855 , H01L21/76862 , H01L2924/0002 , H01L2924/00
摘要： An object of the invention is to provide a semiconductor device which includes a barrier metal having high adhesiveness and diffusion barrier properties and a method of manufacturing the semiconductor device. The invention provides a semiconductor device manufacturing method including forming a first layer made of a material containing silicon on a base substance; forming a second layer containing metal and nitrogen on the first layer; and exposing the second layer to active species obtained from plasma in an atmosphere including reducing gas.
摘要翻译：本发明的目的是提供一种包括具有高粘合性和扩散阻挡性的阻挡金属的半导体器件和制造半导体器件的方法。本发明提供一种半导体器件制造方法，包括在基体上形成由含硅的材料制成的第一层; 在所述第一层上形成含有金属和氮的第二层; 并将第二层暴露于包括还原气体的气氛中从等离子体获得的活性物质。

28. 发明授权

US07440899B2 Phonetic-sound providing system, server, client machine, information-provision managing server and phonetic-sound providing method 有权
标题翻译：语音提供系统，服务器，客户机，信息提供管理服务器和语音提供方法
公开(公告)号：US07440899B2
公开(公告)日：2008-10-21
申请号：US10793863
申请日：2004-03-08
申请人： Nobuyuki Otsuka , Kiyoshi Morimoto , Yuka Yamada , Hiroshi Kutsumi , Nobuo Kitao
发明人： Nobuyuki Otsuka , Kiyoshi Morimoto , Yuka Yamada , Hiroshi Kutsumi , Nobuo Kitao
IPC分类号： G10L21/00
CPC分类号： G06F3/16
摘要： A server, which transmits phonetic-sound information to a plurality of client machines and reproduces the transmitted phonetic-sound information, includes a storage unit for storing a plurality of pieces of voiced phonetic-sound information whose contents are voices of a plurality of speakers in a conversation made up of the voices of the plurality of speakers. The server also includes a timing determining unit for determining reproduction timing of the plurality of pieces of voiced phonetic-sound information, and a transmitting unit for transmitting the voiced phonetic-sound information which is applicable to each client machine, so that its reproduction is executed in the reproduction timing determined by the timing determining unit.
摘要翻译：将语音信息发送到多个客户端机器并再现发送的语音信息的服务器包括：存储单元，用于存储多个语音的语音信息，其内容是多个扬声器的语音由多个扬声器的声音组成的对话。服务器还包括用于确定多条有声语音信息的再现定时的定时确定单元，以及用于发送适用于每个客户端机器的有声语音信息的发送单元，从而执行其再现在由定时确定单元确定的再现定时中。

29. 发明授权

US06777253B2 Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device 有权
标题翻译：半导体制造方法，半导体衬底的制造方法以及半导体发光器件
公开(公告)号：US06777253B2
公开(公告)日：2004-08-17
申请号：US10017389
申请日：2001-12-18
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yasutoshi Kawaguchi , Nobuyuki Otsuka , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yasutoshi Kawaguchi , Nobuyuki Otsuka , Kiyoshi Ohnaka
IPC分类号： H01L2100
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01S5/021 , H01S5/0211 , H01S5/34333
摘要： The method for fabricating a semiconductor includes the steps of: (1) growing a first semiconductor layer made of AlxGa1−xN (0≦x≦1) on a substrate at a temperature higher than room temperature; and (2) growing a second semiconductor layer made of AluGavInwN (0
摘要翻译：制造半导体的方法包括以下步骤：（1）在高于室温的温度下，在衬底上生长由Al x Ga 1-x N（0 <= x <= 1）制成的第一半导体层; 和（2）在第一半导体层上生长由AluGavInwN（0

30. 发明授权

US06653662B2 Semiconductor light-emitting device, method for fabricating the same, and method for driving the same 失效
公开(公告)号：US06653662B2
公开(公告)日：2003-11-25
申请号：US09984913
申请日：2001-10-31
申请人： Nobuyuki Otsuka , Yoshiaki Hasegawa , Gaku Sugahara , Yasutoshi Kawaguchi
发明人： Nobuyuki Otsuka , Yoshiaki Hasegawa , Gaku Sugahara , Yasutoshi Kawaguchi
IPC分类号： H01S500
CPC分类号： H01S5/0425 , H01L27/15 , H01S5/0422 , H01S5/0625 , H01S5/0658
摘要： The semiconductor light-emitting device of the present invention includes a first semiconductor layer of a first conductivity type formed substantially in a uniform thickness on a substrate and a second semiconductor layer of a second conductivity type formed substantially in a uniform thickness on the first semiconductor layer. The device further includes an active layer, formed substantially in a uniform thickness between the first semiconductor layer and the second semiconductor layer, for generating emission light. The device also comprises a first electrode for supplying a drive current to the first semiconductor layer and a second electrode for supplying a drive current to the second semiconductor layer. The device is adapted that the first or second electrode is a divided electrode comprising a plurality of conductive members spaced apart from each other.

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