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21. 发明授权

US07825028B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07825028B2
公开(公告)日：2010-11-02
申请号：US12289271
申请日：2008-10-23
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： H01L21/302
CPC分类号： H01L21/02074 , H01L21/76826 , H01L21/76835 , H01L21/7684
摘要： Disclosed is a method for manufacturing a semiconductor device comprising forming a hydrophobic interlayer insulating film having a relative dielectric constant of 3.5 or less above a semiconductor substrate, forming a recess in the interlayer insulating film, depositing a conductive material above the interlayer insulating film having the recess to form a conductive layer, selectively removing the conductive material deposited above the interlayer insulating film by polishing to expose a surface of the interlayer insulating film while leaving the conductive material in the recess, and subjecting the surface of the interlayer insulating film having the recess filled with the conductive material to pressure washing using a resin member and an alkaline washing liquid containing an inorganic alkali and exhibiting a pH of more than 9.
摘要翻译：公开了一种半导体器件的制造方法，包括在半导体衬底上形成相对介电常数为3.5以下的疏水层间绝缘膜，在层间绝缘膜中形成凹部，在具有凹陷以形成导电层，通过抛光选择性地去除沉积在层间绝缘膜上方的导电材料，以在层间绝缘膜的表面露出，同时将导电材料留在凹槽中，并对具有凹陷的层间绝缘膜的表面进行填充导电材料以使用树脂构件和含有无机碱的碱性洗涤液进行压力洗涤并显示pH大于9。

22. 发明授权

US07198729B2 CMP slurry and method of manufacturing semiconductor device 失效
标题翻译： CMP浆料和半导体器件的制造方法
公开(公告)号：US07198729B2
公开(公告)日：2007-04-03
申请号：US10902940
申请日：2004-08-02
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： C09K13/00 , C09K13/04 , C09K13/06 , H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31058 , H01L21/7684
摘要： CMP slurry contains a polishing component to polish a region to be polished, which includes at least one of a sub-region made of insulative material and a sub-region made of conductive material, and a restoring component to restore a scratch caused on the region to be polished. The scratch can be thus reduced during the polishing.
摘要翻译： CMP浆料包含抛光部件以抛光待抛光区域，其包括由绝缘材料制成的子区域和由导电材料制成的子区域中的至少一个以及恢复部件以恢复在该区域上产生的划痕被抛光。在抛光期间可以减少划痕。

23. 发明申请

US20050218008A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20050218008A1
公开(公告)日：2005-10-06
申请号：US11051624
申请日：2005-01-27
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima
IPC分类号： B24B37/00 , C25D7/12 , H01L21/00 , H01L21/02 , H01L21/304 , H01L21/3205 , H01L21/321 , H01L21/768
CPC分类号： H01L21/6723 , H01L21/02074 , H01L21/3212 , H01L21/67219
摘要： Disclosed is a method for manufacturing a semiconductor device, comprising depositing an electrically conductive film on an insulating film formed above a semiconductor substrate and having a recessed portion, polishing the surface of the electrically conductive film constituting a processing surface with an alkaline slurry on a polishing cloth to expose the surface of the insulating film to the outside while leaving the electrically conductive film selectively within the recessed portion of the insulating film, treating the processing surface, in which the surface of the insulating film is exposed to the outside by the polishing treatment with the alkaline slurry, with a deionized water and, then, with an acidic washing solution so as to render the processing surface acidic, and transferring the semiconductor substrate from the position on the polishing cloth into a washing unit while keeping the processing surface acidic.
摘要翻译：公开了一种制造半导体器件的方法，包括在形成于半导体衬底上的绝缘膜上沉积导电膜并具有凹陷部分，在抛光时用碱性浆料抛光构成处理表面的导电膜的表面布将绝缘膜的表面露出到外部，同时将导电膜选择性地留在绝缘膜的凹陷部分内，通过抛光处理处理绝缘膜的表面暴露于外部的处理表面用碱性浆料，用去离子水，然后用酸性洗涤溶液使处理表面呈酸性，并将半导体衬底从抛光布上的位置转移到洗涤单元中，同时保持处理表面为酸性。

24. 发明授权

US06858539B2 Post-CMP treating liquid and method for manufacturing semiconductor device 有权
标题翻译：后CMP处理液和半导体装置的制造方法
公开(公告)号：US06858539B2
公开(公告)日：2005-02-22
申请号：US10330105
申请日：2002-12-30
申请人： Gaku Minamihaba , Yukiteru Matsui , Nobuyuki Kurashima , Hiroyuki Yano
发明人： Gaku Minamihaba , Yukiteru Matsui , Nobuyuki Kurashima , Hiroyuki Yano
IPC分类号： H01L21/3205 , C09G1/02 , H01L21/02 , H01L21/304 , H01L21/321 , H01L21/3213 , H01L21/302
CPC分类号： H01L21/02074 , C09G1/02 , H01L21/3212
摘要： There is disclosed a post-CMP treating liquid comprising water, and resin particles dispersed in the water and having a functional group at a surface thereof, or comprising water, resin particles dispersed in the water, and an additive having a functional group and incorporated in the water. The post-CMP treating liquid exhibits a polishing rate both of an insulating film and a conductive film of 10 nm/min or less.
摘要翻译：公开了包含水的后CMP处理液，分散在水中的树脂粒子，在其表面具有官能团，或由水，分散在水中的树脂粒子构成的具有官能团的添加剂，水。后CMP处理液的绝缘膜和导电膜的抛光速度为10nm / min以下。

25. 发明申请

US20110062374A1 CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device 有权
标题翻译：用于金属膜的CMP浆料，抛光方法和制造半导体器件的方法
公开(公告)号：US20110062374A1
公开(公告)日：2011-03-17
申请号：US12926358
申请日：2010-11-12
申请人： Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Hiroyuki Yano
发明人： Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Hiroyuki Yano
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212 , H01L22/26
摘要： A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.
摘要翻译：提供了一种用于金属膜的CMP浆料，其包括基于浆料总量为0.01至0.3重量％的重均分子量不小于20,000的聚乙烯吡咯烷酮，氧化剂，保护膜 - 含有形成水不溶性络合物的第一络合剂和形成水溶性络合物的第二络合剂的成膜剂，以及一次粒径为5〜50nm的胶体二氧化硅。

26. 发明申请

US20100093585A1 POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：使用其的半导体器件的后CMP处理液体和制造方法
公开(公告)号：US20100093585A1
公开(公告)日：2010-04-15
申请号：US12638607
申请日：2009-12-15
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： C11D1/74
CPC分类号： H01L21/02074 , C11D1/22 , C11D3/30 , C11D3/3765 , C11D11/0047
摘要： A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
摘要翻译：提供后CMP处理液，其包括水，其表面上具有羧基和磺酰基，一次粒径为10至60nm的树脂颗粒，具有羧基的第一表面活性剂，具有磺酰基的第二表面活性剂基团和四甲基氢氧化铵。树脂颗粒以0.01至1重量％的浓度掺入。处理液的pH为4〜9，并且以10nm / min以下的速度显示绝缘膜和导电膜的抛光速度。

27. 发明申请

US20060012047A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20060012047A1
公开(公告)日：2006-01-19
申请号：US11142235
申请日：2005-06-02
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： H01L23/52
CPC分类号： H01L21/02074 , H01L21/76826 , H01L21/76835 , H01L21/7684
摘要： Disclosed is a method for manufacturing a semiconductor device comprising forming a hydrophobic interlayer insulating film having a relative dielectric constant of 3.5 or less above a semiconductor substrate, forming a recess in the interlayer insulating film, depositing a conductive material above the interlayer insulating film having the recess to form a conductive layer, selectively removing the conductive material deposited above the interlayer insulating film by polishing to expose a surface of the interlayer insulating film while leaving the conductive material in the recess, and subjecting the surface of the interlayer insulating film having the recess filled with the conductive material to pressure washing using a resin member and an alkaline washing liquid containing an inorganic alkali and exhibiting a pH of more than 9.
摘要翻译：公开了一种半导体器件的制造方法，包括在半导体衬底上形成相对介电常数为3.5以下的疏水层间绝缘膜，在层间绝缘膜中形成凹部，在具有凹陷以形成导电层，通过抛光选择性地去除沉积在层间绝缘膜上方的导电材料，以在层间绝缘膜的表面露出，同时将导电材料留在凹槽中，并对具有凹陷的层间绝缘膜的表面进行填充导电材料以使用树脂构件和含有无机碱的碱性洗涤液进行压力洗涤并显示pH大于9。

28. 发明授权

US07833431B2 Aqueous dispersion for CMP, polishing method and method for manufacturing semiconductor device 失效
标题翻译：用于CMP的水分散体，用于制造半导体器件的抛光方法和方法
公开(公告)号：US07833431B2
公开(公告)日：2010-11-16
申请号：US11561071
申请日：2006-11-17
申请人： Gaku Minamihaba , Nobuyuki Kurashima , Dai Fukushima , Yukiteru Matsui , Susumu Yamamoto , Hiroyuki Yano
发明人： Gaku Minamihaba , Nobuyuki Kurashima , Dai Fukushima , Yukiteru Matsui , Susumu Yamamoto , Hiroyuki Yano
IPC分类号： B44C1/22 , H01L21/302 , C09K13/00 , C03C15/00
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31058 , H01L21/31144 , H01L21/7684
摘要： An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 μm on a surface. The maximum length of the resin particles is not more than 5 μm and is 2.5 to 25 times as large as the curvature radius.
摘要翻译：提供了用于化学机械抛光的水分散体，其包括水和树脂颗粒。树脂颗粒在表面附近具有范围为10nm至1.65μm的曲率半径的突起。树脂粒子的最大长度为5μm以下，为曲率半径的2.5〜25倍。

29. 发明申请

US20080124927A1 Semiconductor device including a discontinuous film and method for manufacturing the same 审中-公开
标题翻译：包括不连续膜的半导体器件及其制造方法
公开(公告)号：US20080124927A1
公开(公告)日：2008-05-29
申请号：US11980496
申请日：2007-10-31
申请人： Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima , Susumu Yamamoto
发明人： Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima , Susumu Yamamoto
IPC分类号： H01L21/44
CPC分类号： H01L21/76834 , H01L21/76823 , H01L21/76825 , H01L21/76849 , H01L21/76868 , H01L21/76877 , H01L21/76886 , H01L23/5258 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a first insulating film formed above the semiconductor substrate, Cu wiring buried in the first insulating film, a second insulating film formed above the Cu wiring, and a discontinuous film made of at least one metal selected from the group consisting of Ti, Al, W, Pd, Sn, Ni, Mg and Zn, or a metal oxide thereof and interposed at an interface between the Cu wiring and the second insulating film.
摘要翻译：公开了一种半导体器件，包括半导体衬底，形成在半导体衬底上的第一绝缘膜，埋在第一绝缘膜中的Cu布线，在Cu布线上方形成的第二绝缘膜，以及由至少一种选择的金属制成的不连续膜来自由Ti，Al，W，Pd，Sn，Ni，Mg和Zn组成的组或其金属氧化物，并且介于Cu配线和第二绝缘膜之间的界面处。

30. 发明申请

US20070128873A1 AQUEOUS DISPERSION FOR CMP, POLISHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：用于CMP，抛光方法和制造半导体器件的方法的水性分散体
公开(公告)号：US20070128873A1
公开(公告)日：2007-06-07
申请号：US11561071
申请日：2006-11-17
申请人： Gaku MINAMIHABA , Nobuyuki Kurashima , Dai Fukushima , Yukiteru Matsui , Susumu Yamamoto , Hiroyuki Yano
发明人： Gaku MINAMIHABA , Nobuyuki Kurashima , Dai Fukushima , Yukiteru Matsui , Susumu Yamamoto , Hiroyuki Yano
IPC分类号： C09K13/00 , H01L21/461 , C03C15/00 , H01L21/302 , B44C1/22
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31058 , H01L21/31144 , H01L21/7684
摘要： An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 μm on a surface. The maximum length of the resin particles is not more than 5 μm and is 2.5 to 25 times as large as the curvature radius.
摘要翻译：提供了用于化学机械抛光的水分散体，其包括水和树脂颗粒。树脂颗粒伴随着表面上具有10nm至1.65μm的曲率半径的突起。树脂粒子的最大长度为5μm以下，为曲率半径的2.5〜25倍。

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