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21. 发明授权

US09856386B2 Inkjet ink, inkjet recording method using the inkjet ink, and print formed by the inkjet ink 有权
公开(公告)号：US09856386B2
公开(公告)日：2018-01-02
申请号：US14869213
申请日：2015-09-29
申请人： Masahiro Kido , Naohiro Toda , Tomohiro Nakagawa , Juichi Furukawa , Hidefumi Nagashima , Hikaru Kobayashi
发明人： Masahiro Kido , Naohiro Toda , Tomohiro Nakagawa , Juichi Furukawa , Hidefumi Nagashima , Hikaru Kobayashi
IPC分类号： C09D11/40 , B05D1/36 , C08G18/48 , C08G18/66 , C08G18/75 , C08G18/08 , C08G18/24 , C08G18/44 , C08L75/06 , C09D11/10 , C09D11/102 , C09D11/322
CPC分类号： C09D11/40 , C08G18/0823 , C08G18/246 , C08G18/44 , C08G18/4854 , C08G18/6659 , C08G18/6692 , C08G18/755 , C08L75/06 , C09D11/10 , C09D11/102 , C09D11/322
摘要： An inkjet ink set is provided. The inkjet ink set includes a first ink including a resin A and an organic solvent A; and a second ink including a resin B and an organic solvent which is the same as or different from the organic solvent A. The minimum film forming temperature (MFT) of the resin A is lower than that of the resin B.

22. 发明授权

US09493665B2 Ink set for inkjet and inkjet recording method 有权
标题翻译：喷墨和喷墨记录方法的油墨
公开(公告)号：US09493665B2
公开(公告)日：2016-11-15
申请号：US14739296
申请日：2015-06-15
申请人： Naohiro Toda , Juichi Furukawa , Hidefumi Nagashima , Tomohiro Nakagawa , Hikaru Kobayashi
发明人： Naohiro Toda , Juichi Furukawa , Hidefumi Nagashima , Tomohiro Nakagawa , Hikaru Kobayashi
IPC分类号： C09D11/322 , C09D11/40 , B41J2/005
CPC分类号： C09D11/322 , B41J2/005 , C09D11/38 , C09D11/40
摘要： An ink set for inkjet contains a white ink and one or more color inks other than the white ink, wherein the ink set satisfies the following I to III: I. each ink comprises water, a pigment, resin particulates, a water soluble organic solvent, and a silicone-based surfactant accounting for 1% by weight to 3% by weight of the ink, II. the pigment contained in each of the one or more color inks is a reformed pigment reformed by at least one of a geminal bisphosphonic acid group or a geminal bisphosphonic acid salt group, and III. the water soluble organic solvent of the white ink comprises glycol ether having a boiling point of from 200 degrees C. to 250 degrees C.

23. 发明申请

US20150259553A1 INK, INKJET RECORDING METHOD, AND RECORDED MATTER 有权
标题翻译： INK，INKJET记录方法和记录事项
公开(公告)号：US20150259553A1
公开(公告)日：2015-09-17
申请号：US14643639
申请日：2015-03-10
申请人： Tomohiro NAKAGAWA , Naohiro Toda , Hidefumi Nagashima , Juichi Furukawa , Hikaru Kobayashi
发明人： Tomohiro NAKAGAWA , Naohiro Toda , Hidefumi Nagashima , Juichi Furukawa , Hikaru Kobayashi
IPC分类号： C09D11/36 , C09D11/102
CPC分类号： C09D11/36 , C09D11/10 , C09D11/102 , C09D11/30 , C09D11/322 , C09D11/40
摘要： An ink contains water, a hydrosoluble organic solvent, a colorant, a resin A; and a resin B, wherein the content of the resin B is from 0.5% by weight to less than 10% by weight to the content of the resin A and the resin B has a minimum film-forming temperature at least 30° C. lower than that of the resin A.
摘要翻译：油墨含有水，水溶性有机溶剂，着色剂，树脂A; 和树脂B，其中树脂B的含量相对于树脂A的含量为0.5重量％至小于10重量％，树脂B的成膜温度至少为30℃以下比树脂A.

24. 发明授权

US09076916B2 Method and device for manufacturing semiconductor devices, semiconductor device and transfer member 有权
标题翻译：用于制造半导体器件，半导体器件和转移元件的方法和器件
公开(公告)号：US09076916B2
公开(公告)日：2015-07-07
申请号：US13578967
申请日：2011-02-14
申请人： Hikaru Kobayashi
发明人： Hikaru Kobayashi
IPC分类号： H01L21/461 , H01L21/46 , H01L27/14 , H01L31/0747 , H01L31/0236 , H01L31/18
CPC分类号： H01L31/0747 , H01L31/02363 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10T29/41 , Y10T442/10
摘要： Disclosed is a method for manufacturing semiconductor devices. Said method includes: a supply step in which a process liquid (19) that oxidizes and dissolves a target substrate (20) to be treated is supplied to the surface of said substrate (20) to be treated; a positioning step in which a mesh-like transferring member (10b) provided with a catalyst material is positioned near or in contact with the surface of the substrate (20) to be treated; and a concave or convex forming step in which a concave or convex is formed on the surface of the substrate (20) to be treated via the aforementioned supply and positioning steps. As opposed to existing manufacturing methods, which manufacture semiconductor devices provided with semiconductor substrates with highly arbitrary (i.e. not very reproducible) concaves or convexes, by forming an appropriate concave or convex or mesh at the transferring member step, the disclosed method can stably manufacture semiconductor devices provided with semiconductor substrates that have concaves or convexes of a fixed level.
摘要翻译：公开了半导体器件的制造方法。所述方法包括：供给步骤，其中将待处理的目标基板（20）氧化和溶解的处理液体（19）供给到待处理的所述基板（20）的表面; 定位步骤，其中设置有催化剂材料的网状转印构件（10b）位于待处理的基板（20）的表面附近或与之接触; 以及通过上述供给和定位步骤在待处理的基板（20）的表面上形成凹或凸的凹凸形成步骤。与现有制造方法相反，所述制造方法通过在转印构件步骤形成适当的凹或凸或网状物来制造具有高度任意（即不是非常可再现的）凹凸的半导体衬底的半导体器件，所公开的方法可以稳定地制造半导体设置有具有固定水平的凹陷或凸起的半导体衬底的器件。

25. 发明申请

US20110006310A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：US20110006310A1
公开(公告)日：2011-01-13
申请号：US12742398
申请日：2008-11-11
申请人： Hiroyuki Nagasawa , Naoki Hatta , Takamitsu Kawahara , Hikaru Kobayashi
发明人： Hiroyuki Nagasawa , Naoki Hatta , Takamitsu Kawahara , Hikaru Kobayashi
IPC分类号： H01L29/24 , H01L21/20
CPC分类号： H01L29/872 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L29/045 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/94
摘要： A semiconductor device comprises a semiconductor substrate made of silicon carbide, a gate insulating film formed on the semiconductor substrate, and a gate electrode formed on the gate insulating film. The junction surface of the semiconductor surface joined with the gate insulating film is macroscopically parallel to a nonpolar face and microscopically comprised of the nonpolar face and a polar face. In the polar face, either a Si face or a C face is dominant. A semiconductor device comprises a semiconductor substrate comprised of silicon carbide and a gate electrode formed on the semiconductor substrate. The junction surface of the semiconductor surface joined with the electrode is macroscopically parallel to a nonpolar face and microscopically comprised of the nonpolar face and a polar face. In the polar face, either a Si face or a C face is dominant. The present invention is a semiconductor device having a silicon carbide substrate, and the electrical characteristics and the stability of the interface between the electrode and the silicon carbide or between the oxide film (insulating film) and the silicon carbide in the nonpolar face of a silicon carbide epitaxial layer can be improved.
摘要翻译：半导体器件包括由碳化硅制成的半导体衬底，形成在半导体衬底上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。与栅极绝缘膜接合的半导体表面的接合表面在宏观上平行于非极性面并且显微地由非极性面和极面组成。在极面中，Si面或C面是主要的。半导体器件包括由碳化硅构成的半导体衬底和形成在半导体衬底上的栅电极。与电极接合的半导体表面的结表面在宏观上平行于非极性面并且显微地由非极性面和极面组成。在极面中，Si面或C面是主要的。本发明是一种具有碳化硅衬底的半导体器件，以及电极和碳化硅之间或氧化膜（绝缘膜）和硅的非极性表面中的碳化硅之间的界面的电特性和稳定性可以改善碳化物外延层。

26. 发明授权

US06593164B2 Silicon photoelectric conversion device, method of manufacturing the same and method of processing the same 有权
公开(公告)号：US06593164B2
公开(公告)日：2003-07-15
申请号：US10193210
申请日：2002-07-12
申请人： Hikaru Kobayashi , Hideomi Koinuma
发明人： Hikaru Kobayashi , Hideomi Koinuma
IPC分类号： H01L310288
CPC分类号： H01L31/186 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A cyano process of introducing cyano ions (CN−) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed in an aqueous solution containing potassium cyanide (KCN) in a vessel. The cyano process eliminates factors (e.g., weak bonds, defects, and centers of recombination) of decrease in photoconductivity of the as-deposited amorphous silicon thin film, which are identifiable in the as-deposited film. As a result, the photoconductivity of the amorphous silicon layer is already higher than usual from the beginning and will hardly decrease even upon exposure to light.

27. 发明授权

US06221788B1 Semiconductor and a method for manufacturing an oxide film on the surface of a semiconductor substrate 有权
标题翻译：半导体和在半导体衬底的表面上制造氧化膜的方法
公开(公告)号：US06221788B1
公开(公告)日：2001-04-24
申请号：US09213626
申请日：1998-12-18
申请人： Hikaru Kobayashi , Kenji Yoneda , Takashi Namura
发明人： Hikaru Kobayashi , Kenji Yoneda , Takashi Namura
IPC分类号： H01L2144
CPC分类号： H01L21/28194 , H01L21/02164 , H01L21/02238 , H01L21/02304 , H01L21/28035 , H01L21/28158 , H01L21/28167 , H01L21/28185 , H01L21/28211 , H01L21/31654 , H01L29/513 , H01L29/517
摘要： The semiconductor of the present invention comprises at least an oxide film and a metal thin film on the surface of the semiconductor. The metal thin film includes a metal serving as an oxidation catalyst and has a thickness in the range of 0.5-30 nm. The oxide film comprises a metal serving as an oxidation catalyst and having a thickness in the range of 1-20 nm. Thus, a high-quality oxide film can be formed on the surface of the semiconductor substrate with high controllability without conducting a high temperature heat treatment. The invention employs the method of manufacturing the semiconductor has a steps of forming the first oxidation film having thickness in the range of 0.1-2.5 nm on the semiconductor substrate; forming the metal thin film (for example platinum film) serving as an oxide catalyst to the thickness in the range of 0.5-30 nm on the first oxide thin film; and then forming the second oxide film by heat treating in an oxidizing atmosphere at temperatures from 25 to 600° C.
摘要翻译：本发明的半导体在半导体的表面上至少包含氧化膜和金属薄膜。金属薄膜包括作为氧化催化剂的金属，其厚度在0.5-30nm的范围内。氧化物膜包含作为氧化催化剂的金属，其厚度在1-20nm的范围内。因此，可以在不进行高温热处理的情况下，在高可控性的状态下，在半导体基板的表面上形成高品质的氧化膜。本发明采用半导体制造方法，在半导体基板上形成厚度为0.1〜2.5nm的第一氧化膜的工序; 在第一氧化物薄膜上形成厚度为0.5-30nm的用作氧化物催化剂的金属薄膜（例如铂膜）; 然后在25〜600℃的温度下在氧化性气氛中进行热处理而形成第二氧化膜。

28. 发明授权

US06022813A Method and apparatus for manufacturing semiconductor devices 失效
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US06022813A
公开(公告)日：2000-02-08
申请号：US916376
申请日：1997-08-22
申请人： Hikaru Kobayashi , Kenji Yoneda
发明人： Hikaru Kobayashi , Kenji Yoneda
IPC分类号： H01L29/78 , H01L21/306 , H01L21/314 , H01L21/316 , H01L21/336 , H01L29/786 , H01L29/88 , H01L31/10 , H01L45/80
CPC分类号： H01L21/02052
摘要： There are disclosed a method and apparatus for manufacturing semiconductor devices. The surface of each semiconductor substrate is exposed to cyanide ions (CN.sup.-) in order to reduce the density of interface states at the insulating film/semiconductor interface. For this purpose, the semiconductor substrate is immersed into a cyan compound solution or is exposed to a cyan compound gas, so that cyanide ions (CN.sup.-) are bonded to dangling bonds at the surface of the semiconductor substrates. As a result, the interface states at the insulating film/semiconductor interface can be reduced.
摘要翻译：公开了用于制造半导体器件的方法和装置。每个半导体衬底的表面暴露于氰离子（CN-），以便降低绝缘膜/半导体界面处的界面态的密度。为此，将半导体衬底浸入青色化合物溶液中或暴露于青色化合物气体中，使得氰化物离子（CN-）与半导体衬底的表面处的悬挂键结合。结果，可以减少绝缘膜/半导体界面处的界面状态。

29. 发明授权

US10399363B2 Print method, ink set, and inkjet print device 有权
公开(公告)号：US10399363B2
公开(公告)日：2019-09-03
申请号：US15634706
申请日：2017-06-27
申请人： Juichi Furukawa , Masaaki Tsuda , Hidefumi Nagashima , Yukihiro Imanaga , Masahiro Kido , Hikaru Kobayashi , Yuta Nakamura
发明人： Juichi Furukawa , Masaaki Tsuda , Hidefumi Nagashima , Yukihiro Imanaga , Masahiro Kido , Hikaru Kobayashi , Yuta Nakamura
IPC分类号： B41M5/00 , B41J11/00 , C09D11/40 , C09D11/38 , C09D11/322
摘要： A print method includes applying a first ink to a recording medium to form a first ink print layer, drying the first ink print layer to a drying ratio of 30 percent or less, and applying a second ink having a color different from that of the first ink to the first ink print layer to form a second ink print layer thereon, wherein the first ink includes a urethane resin particle and a water-soluble organic solvent having a boiling point of from 100 to 180 degrees C. or β-alkoxy propionamide of Chemical formula I, where R1 represents a methyl group, an ethyl group, a propyl group, or a butyl group and R2 and R3 each, independently represent alkyl groups having one to six carbon atoms, and the first ink and the second ink includes no organic solvent having a boiling point of 280 degrees C. or higher under 1 atm.

30. 发明申请

US20190216082A1 COMPOUND, PRODUCTION METHOD THEREFOR, AND HYDROGEN SUPPLY METHOD 审中-公开
公开(公告)号：US20190216082A1
公开(公告)日：2019-07-18
申请号：US16327782
申请日：2017-07-27
申请人： Hikaru Kobayashi , KIT Co., Ltd. , NISSHIN KASEI CO., LTD.
发明人： Hikaru Kobayashi , Yuki Kobayashi
IPC分类号： A01N25/12 , C01B33/02 , C01B3/06 , C05G3/00 , C02F1/68
CPC分类号： A01N25/12 , C01B3/06 , C01B33/02 , C01P2004/50 , C01P2004/64 , C02F1/68 , C05G3/00
摘要： One compound (100) according to the present invention contains silicon fine particles having a capability of generating hydrogen or aggregates of the silicon fine particles. The compound that contains the silicon fine particles or the aggregates having a capability of generating hydrogen is capable of generating hydrogen in the body of, for example, an animal that has ingested the compound. For a plant, the compound can be disposed or charged into, for example, moisture (water-containing liquid) or fertilizer to be provided to the plant, to supply the plant with hydrogen generated from the compound.

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