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    • 25. 发明申请
    • Encapsulated wafer processing device and process for making thereof
    • 封装晶片处理装置及其制造方法
    • US20060096946A1
    • 2006-05-11
    • US11262279
    • 2005-10-28
    • Marc SchaepkensTakayuki Togawa
    • Marc SchaepkensTakayuki Togawa
    • H01B13/00C23C16/00C23F1/00
    • H01L21/6833H01L21/67103H01L21/67109H01L21/6831
    • A wafer processing device for use in semiconductor wafer processing applications as an Electro-Static Chuck (ESC) comprising a graphite substrate and at least one electrode pattern, wherein the grooves in the electrode pattern are filled with insulating or semiconducting material selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and rare earth metals, or complexes and/or combinations thereof, forming a substantially planar surface. The substantially planar surface is then coated with at least a semiconducting layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and rare earth metals, or complexes and/or combinations thereof.
    • 一种晶片处理装置,用于半导体晶片处理应用中,作为包含石墨基片和至少一个电极图案的静电卡盘(ESC),其中电极图案中的凹槽填充有绝缘或半导体材料,绝缘或半导体材料选自 B,Al,Si,Ga,难熔硬金属,过渡金属和稀土金属,或其复合物和/或其组合,形成基本平坦的表面。 然后用至少一个半导体层涂覆基本平坦的表面,该半导体层包括选自由B,Al,Si,Ga,耐火硬金属,过渡金属和过渡金属组成的组中的元素的氮化物,碳化物,碳氮化物或氮氧化物中的至少一种 稀土金属或其配合物和/或其组合。
    • 26. 发明授权
    • System and method for inductive coupling of an expanding thermal plasma
    • 膨胀热等离子体的感应耦合系统和方法
    • US06969953B2
    • 2005-11-29
    • US10609958
    • 2003-06-30
    • Marc Schaepkens
    • Marc Schaepkens
    • C23C16/00H01J7/24H01J37/32H05H1/46
    • H01J37/321H01J37/32357H05H1/46
    • A method is provided for generating plasma using a plasma generator system. The method includes the steps of introducing energy and a reactant to a plasma generation apparatus of the plasma generator system for generating plasma, and expanding and inductively coupling the generated plasma. In another embodiment a plasma generation system is provided including a plasma generation apparatus for generating thermal plasma. The thermal plasma is received by a plasma treatment chamber external to the plasma generation apparatus. A pressure control system maintains a lower pressure in the plasma treatment chamber than in the plasma generation apparatus during plasma generation for causing the thermal plasma to expand within the plasma treatment chamber. An inductor system inductively couples the thermal plasma.
    • 提供了一种使用等离子体发生器系统产生等离子体的方法。 该方法包括以下步骤:将能量和反应物引入到等离子体发生器系统的等离子体发生装置中,用于产生等离子体,以及膨胀和感应耦合产生的等离子体。 在另一个实施例中,提供了一种等离子体发生系统,其包括用于产生热等离子体的等离子体产生装置。 热等离子体由等离子体发生装置外部的等离子体处理室接收。 压力控制系统在等离子体发生装置期间等离子体处理室中的等离子体处理室中保持较低的压力,以使等离子体处理室内的热等离子体膨胀。 电感系统感应耦合热等离子体。
    • 30. 发明申请
    • Apparatus and method for depositing large area coatings on planar surfaces
    • 用于在平坦表面上沉积大面积涂层的装置和方法
    • US20050079295A1
    • 2005-04-14
    • US10626253
    • 2003-07-23
    • Marc Schaepkens
    • Marc Schaepkens
    • C23C16/32C23C16/40C23C16/50H01J37/32H05H1/24
    • H01J37/32009C23C16/325C23C16/401C23C16/50
    • A method and apparatus for depositing a uniform coating on a large area, planar surface using an array of multiple plasma sources and a common reactant gas injector. The apparatus includes at least one array of a plurality of plasma sources, wherein each of the plurality of plasma sources includes a cathode, an anode, and an inlet for a non-reactive plasma source gas disposed in a plasma chamber, and a common reactant gas injector disposed in a deposition chamber that contains the substrate. The common reactant gas injector provides a uniform flow of at least one reactant gas to each of the multiple plasmas generated the multiple plasma sources through a single delivery system. The at least one reactant gas reacts with the plurality of plasmas to form a uniform coating on a substrate.
    • 一种用于使用多个等离子体源阵列和普通反应气体注入器在大面积平坦表面上沉积均匀涂层的方法和装置。 该装置包括多个等离子体源的至少一个阵列,其中多个等离子体源中的每一个包括阴极,阳极和设置在等离子体室中的非反应性等离子体源气体的入口,以及常见的反应物 气体注入器设置在包含基板的沉积室中。 常见的反应气体注射器通过单个输送系统提供均匀流动的至少一种反应气体至多个等离子体中的每一个,从而产生多个等离子体源。 至少一种反应物气体与多个等离子体反应以在基底上形成均匀的涂层。