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21. 发明申请

US20100214525A1 IMAGE DISPLAY DEVICE 审中-公开
标题翻译：图像显示设备
公开(公告)号：US20100214525A1
公开(公告)日：2010-08-26
申请号：US12702881
申请日：2010-02-09
申请人： Shinya Yamaguchi , Mutsuko Hatano , Takashi Hattori , Naoya Okada
发明人： Shinya Yamaguchi , Mutsuko Hatano , Takashi Hattori , Naoya Okada
IPC分类号： G02F1/1333 , H01J1/62 , H05K1/00
CPC分类号： G02F1/133305 , G02F2201/54
摘要： Provided is an image display device, including: a first flexible substrate; and a circuit-forming layer constituting an image display area, the circuit-forming layer being made to adhere to one of surfaces of the first flexible substrate, in which, when the first flexible substrate has a thickness of t2, the circuit-forming layer has a thickness of t1 satisfying the following Equation (1): t1≧3/40×(t2-23) (1).
摘要翻译：提供一种图像显示装置，包括：第一柔性基板; 以及构成图像显示区域的电路形成层，所述电路形成层粘附到所述第一柔性基板的一个表面上，其中当所述第一柔性基板具有厚度为t2时，所述电路形成层具有满足下述式（1）的t1的厚度：t1≥3/ 40×（t2-23）（1）。

22. 发明授权

US07666769B2 Method for fabricating image display device 有权
标题翻译：图像显示装置的制造方法
公开(公告)号：US07666769B2
公开(公告)日：2010-02-23
申请号：US11702576
申请日：2007-02-06
申请人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
发明人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
IPC分类号： H01L21/20
CPC分类号： H01L21/02683 , G02F1/13454 , H01L21/02532 , H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.
摘要翻译：提供一种制造具有有源矩阵基板的图像显示装置的方法，所述有源矩阵基板包括以高迁移率运行的高性能晶体管电路作为用于驱动作为矩阵布置的像素部分的驱动电路。形成在设置在构成图像显示装置的有源矩阵基板SUB1的像素区域PAR的周围的驱动电路区域DAR1中的多晶硅膜的部分被照射并用脉冲调制激光束或伪CW激光束扫描重新形成具有在扫描方向上连续的晶体边界的准带状晶体硅膜，从而形成各自由准带状晶体硅膜构成的离散重整区域。在由分立重构区域构成的虚拟瓦片TL中，形成具有诸如薄膜晶体管等有源元件的驱动电路，使得其沟道方向与准带状晶体硅中的晶体生长方向一致电影。

23. 发明授权

US07586554B2 Liquid crystal display device and dielectric film usable in the liquid crystal display device 有权
标题翻译：可用于液晶显示装置的液晶显示装置和电介质膜
公开(公告)号：US07586554B2
公开(公告)日：2009-09-08
申请号：US11583882
申请日：2006-10-20
申请人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
发明人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
IPC分类号： G02F1/136
CPC分类号： G02F1/1362 , G02F1/133345 , G02F2202/02 , H01L21/02126 , H01L21/02222 , H01L21/02282 , H01L21/3122 , H01L21/31633 , H01L21/3185 , Y10T428/10
摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.
摘要翻译：本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置以低成本生产的扁平性。使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。

24. 发明申请

US20080292786A1 Method of manufacturing display device 审中-公开
标题翻译：显示装置的制造方法
公开(公告)号：US20080292786A1
公开(公告)日：2008-11-27
申请号：US12153568
申请日：2008-05-21
申请人： Mutsuko Hatano , Takashi Hattori
发明人： Mutsuko Hatano , Takashi Hattori
IPC分类号： B05D5/06
CPC分类号： H01L27/1266 , G02F1/133305 , G02F1/1368 , H01L27/1214
摘要： Provided is a method of manufacturing a display device having a step of forming a resin material layer by curing a resin coated on the main surface of a glass substrate; a step of forming a display circuit configured by a plurality of lamination material layers on the main surface side of said resin material layer; and a step of generating exfoliation at the interface between said resin material layer and said glass substrate, by irradiating a ultraviolet ray from the surface on the opposite side to the surface provided with said display circuit of said glass substrate, and said resin material layer, from which said glass substrate is removed, is used as a substrate provided with said display circuit.
摘要翻译：提供一种制造显示装置的方法，该显示装置具有通过固化涂覆在玻璃基板的主表面上的树脂来形成树脂材料层的步骤; 在所述树脂材料层的主表面上形成由多层叠材料层构成的显示电路的步骤; 以及通过从设置有所述玻璃基板的所述显示电路的表面的相反侧的表面照射紫外线和所述树脂材料层，在所述树脂材料层和所述玻璃基板之间的界面处产生剥离的步骤，将所述玻璃基板从所述玻璃基板除去，用作设置有所述显示电路的基板。

25. 发明授权

US07456913B2 LCD with first and second circuit regions each with separately optimized transistor properties 有权
标题翻译： LCD具有第一和第二电路区域，每个具有单独优化的晶体管特性
公开(公告)号：US07456913B2
公开(公告)日：2008-11-25
申请号：US11878285
申请日：2007-07-23
申请人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
发明人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
IPC分类号： G02F1/136
CPC分类号： H01L27/1296 , G02F1/13624 , G02F1/136277 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78627
摘要： A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.
摘要翻译：大量像素PXL以矩阵方式排列在绝缘基板上的显示区域DSP中。在显示区域DSP周围设置有漏极侧像素驱动电路，其包括漏极移位寄存器DSR，数模转换器电路DAC，漏极电平移位器DLS，缓冲器BF和采样开关SSW; 以及包括栅极移位寄存器GSR和栅极电平移位器GLS的栅极侧像素驱动电路以及各种电路。构成需要这些像素驱动电路的高速操作的电路区域SX的薄膜晶体管的电流迁移率通过优化各个电路的多个布局，配置和配置的组合来满足各个电路特有的规格而得到改善。

26. 发明申请

US20070246709A1 THIN FILM SEMICONDUCTOR DEVICE 有权
标题翻译：薄膜半导体器件
公开(公告)号：US20070246709A1
公开(公告)日：2007-10-25
申请号：US11768588
申请日：2007-06-26
申请人： Shinya YAMAGUCHI , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya YAMAGUCHI , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L33/00 , H01L29/04
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.
摘要翻译：提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。多晶的表面在其晶界处是平坦的。此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜100％的范围内。

27. 发明申请

US20070155070A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070155070A1
公开(公告)日：2007-07-05
申请号：US11620154
申请日：2007-01-05
申请人： Kiyoshi OUCHI , Mutsuko Hatano , Takeshi Sato , Mitsuharu Tai
发明人： Kiyoshi OUCHI , Mutsuko Hatano , Takeshi Sato , Mitsuharu Tai
IPC分类号： H01L21/84
CPC分类号： H01L21/02683 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285
摘要： An image display device capable of high-resolution and smooth moving image display, equipped with TFTs in an n-type (or p-type) semiconductor layer with a high on-off ratio and a low resistance. In polysilicon crystallization by laser annealing, an n-type (or p-type) semiconductor layer with a low resistance is produced by performing the following processes in order: implanting nitrogen (N) ions into an amorphous silicon precursor semiconductor film; laser crystallization; implanting n-type (or p-type) dopant ions; and annealing for dopant activation. When fabricating TFTs, this low-resistance semiconductor layer is used to form a source and a drain. Since C, N, and O impurities decrease the mobility of the TFTs, polysilicon is used in which the contaminants concentrations meet the following conditions: carbon concentration ≦3×1019 cm−3, nitrogen concentration ≦5×1017 cm−3, and oxygen concentration ≦3×1019 cm−3.
摘要翻译：一种具有高分辨率和平滑运动图像显示的图像显示装置，在具有高开关比和低电阻的n型（或p型）半导体层中配备有TFT。在通过激光退火的多晶硅结晶中，通过以下步骤进行以下工序来制造具有低电阻的n型（或p型）半导体层：将氮（N）离子注入到非晶硅前驱体半导体膜中; 激光结晶; 注入n型（或p型）掺杂剂离子; 并进行掺杂剂激活退火。当制造TFT时，该低电阻半导体层用于形成源极和漏极。由于C，N和O杂质降低了TFT的迁移率，所以使用多晶硅，其中污染物浓度满足以下条件：碳浓度<= 3×10 9 / >，氮浓度<= 5×10 17 cm -3，氧浓度<= 3×10 9 cm -3 -3 / 。

28. 发明授权

US07193693B2 Apparatus for manufacturing flat panel display devices 有权
标题翻译：用于制造平板显示装置的装置
公开(公告)号：US07193693B2
公开(公告)日：2007-03-20
申请号：US10991482
申请日：2004-11-19
申请人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Takeshi Noda
发明人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Takeshi Noda
IPC分类号： G01N21/00 , G01J1/00 , B23K26/06
CPC分类号： B23K26/073 , B23K26/702 , H01L27/14625
摘要： A mechanism for always measuring the spatial intensity distribution of a laser beam and displacement of the optical axis of the laser beam is provided so that a measured signal is processed when the laser beam incident on a laser beam shaping optical element is out of a predetermined condition. The shape, diameter and incidence position of the laser beam incident on the laser beam shaping optical element are always kept in the predetermined condition by a spatial filter disposed at the position of a focal point of lenses forming a beam expander disposed in the optical axis, on the basis of a result of the signal processing.In this manner, silicon thin films uniform in crystallinity can be formed stably with a high yield on an insulating substrate which forms display panels of flat panel display devices.
摘要翻译：提供用于总是测量激光束的空间强度分布和激光束的光轴位移的机构，使得当入射到激光束整形光学元件上的激光束处于预定条件时，处理测量信号。入射到激光束整形光学元件上的激光束的形状，直径和入射位置总是通过设置在设置在光轴上的形成光束扩展器的透镜的焦点的位置处的空间滤光器保持在预定条件，基于信号处理的结果。以这种方式，可以在形成平板显示装置的显示面板的绝缘基板上以高产率稳定地形成结晶度均匀的硅薄膜。

29. 发明授权

US07183148B2 Display panel and method for manufacturing the same 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US07183148B2
公开(公告)日：2007-02-27
申请号：US10914333
申请日：2004-08-10
申请人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
发明人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
IPC分类号： H01L21/00
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/064 , B23K26/0648 , B23K26/0652 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1229 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： An amorphous silicon film on an insulating substrate portion to be formed as an individual display panel in a large-sized insulating substrate is irradiated with a continuous-wave (CW) solid-state laser beam condensed linearly, while being scanned therewith at a fixed speed in the width direction of the condensed laser beam. A pixel portion and a peripheral circuit portion in the same insulating substrate portion are irradiated with the laser beam temporally modulated to have a power density high enough to provide predetermined crystallinity. The amorphous silicon film is transformed into a silicon film having crystallinity corresponding to performance required for thin film transistors to be built in each of the pixel portion and the peripheral circuit portion. In such a manner, a thin film transistor circuit having optimum crystallinity required in the pixel or peripheral circuit portion can be obtained while high throughput is kept. Thus, a product having good display features as a display panel can be provided inexpensively.
摘要翻译：在大尺寸绝缘基板上作为单独显示面板形成的绝缘基板部分上的非晶硅膜用线性冷却的连续波（CW）固态激光束照射，同时以固定速度扫描在聚光激光束的宽度方向上。在同一绝缘基板部分中的像素部分和外围电路部分被照射到时间调制的激光束以具有足够高的功率密度以提供预定的结晶度。将非晶硅膜转变成具有对应于要构建在每个像素部分和外围电路部分中的薄膜晶体管所需的性能的结晶度的硅膜。以这种方式，可以获得在像素或外围电路部分所需的最佳结晶度的薄膜晶体管电路，同时保持高通量。因此，可以廉价地提供具有作为显示面板的良好显示特征的产品。

30. 发明申请

US20060029426A1 Active matrix display device 有权
标题翻译：主动矩阵显示装置
公开(公告)号：US20060029426A1
公开(公告)日：2006-02-09
申请号：US11246225
申请日：2005-10-11
申请人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
发明人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
IPC分类号： G03G15/00 , G03G15/22
CPC分类号： H01L21/02686 , H01L21/0268 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/66765
摘要： A laser beam is selectively directed to an amorphous silicon film of a pixel portion on an active-matrix substrate of a display device to modify the amorphous silicon film into a polysilicon film. Pixel circuits such as thin film transistors are formed on the modified polysilicon film. Thus, it is possible to realize remarkably economically the display device provided with the active-matrix substrate having the high performance thin film transistor circuits.
摘要翻译：激光束被选择性地引导到显示装置的有源矩阵基板上的像素部分的非晶硅膜，以将非晶硅膜修改为多晶硅膜。像素电路如薄膜晶体管形成在改性多晶硅膜上。因此，可以显着地实现具有高性能薄膜晶体管电路的有源矩阵基板的显示装置。

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