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    • 21. 发明申请
    • METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • US20120094476A1
    • 2012-04-19
    • US13051031
    • 2011-03-18
    • Masayuki TANAKAKazuhiro MatsuoYoshio Ozawa
    • Masayuki TANAKAKazuhiro MatsuoYoshio Ozawa
    • H01L21/28
    • H01L21/28282H01L27/11568H01L27/11582
    • According to an embodiment, there is provided a method of manufacturing a semiconductor device, including forming a nitride film by nitriding a surface of an underlying region having a semiconductor region containing silicon as a main component and an insulating region containing silicon and oxygen as a main component and adjacent to the semiconductor region, carrying out oxidation with respect to the nitride film to convert a portion of the nitride film which is formed on the insulating region into an oxide film and to leave a portion of the nitride film which is formed on the semiconductor region as at least part of a charge storage insulating film, forming a block insulating film on the charge storage insulating film, and forming a gate electrode film on the block insulating film.
    • 根据一个实施例,提供一种制造半导体器件的方法,包括通过氮化作为主要成分的含有硅的半导体区域的下面的区域的表面和以硅和氧为主要的绝缘区域来形成氮化物膜 并且与半导体区域相邻,相对于氮化物膜进行氧化,将形成在绝缘区域上的氮化物膜的一部分转换为氧化膜,并且使形成在该半导体层上的氮化膜的一部分 半导体区域作为电荷存储绝缘膜的至少一部分,在电荷存储绝缘膜上形成块绝缘膜,并在块绝缘膜上形成栅极电极膜。