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21. 发明授权

US06842658B2 Method of manufacturing a semiconductor device and manufacturing system 失效
标题翻译：制造半导体器件和制造系统的方法
公开(公告)号：US06842658B2
公开(公告)日：2005-01-11
申请号：US09791666
申请日：2001-02-26
申请人： Masaru Izawa , Masahito Mori , Nobuyuki Negishi , Shinichi Tachi
发明人： Masaru Izawa , Masahito Mori , Nobuyuki Negishi , Shinichi Tachi
IPC分类号： H01L21/302 , G05B19/418 , H01L21/00 , H01L21/02 , H01L21/3065 , G06F19/00
CPC分类号： G05B19/41875 , G05B2219/31288 , G05B2219/32053 , G05B2219/32198 , G05B2219/45031 , H01L21/67276 , Y02P90/14 , Y02P90/18 , Y02P90/20 , Y02P90/22 , Y02P90/26 , Y02P90/86
摘要： Automatic generation of processing conditions will be provided, based on a database and process modeling by a computer equipped in semiconductor device fabrication equipment, by using input of wafer processing history including the thickness and quality. The computer equipped in semiconductor device fabrication equipment obtains the wafer processing and inspection results from a production line management computer in order to assist input of the process history. The computer in the fabrication equipment can be connected to computers in a fabrication equipment manufacturer on a communication network to automatically provide process conditions and maintenance schedule.
摘要翻译：将通过使用半导体器件制造设备中配备的计算机的数据库和过程建模，通过使用包括厚度和质量的晶片处理历史的输入来提供自动生成处理条件。配备在半导体器件制造设备中的计算机从生产线管理计算机获得晶片处理和检查结果，以帮助输入过程历史。制造设备中的计算机可以连接到通信网络上制造设备制造商中的计算机，以自动提供过程条件和维护计划。

22. 发明申请

US20130112669A1 HEAT TREATMENT APPARATUS 审中-公开
标题翻译：热处理设备
公开(公告)号：US20130112669A1
公开(公告)日：2013-05-09
申请号：US13354358
申请日：2012-01-20
申请人： Takashi UEMURA , Kenetsu Yokogawa , Masatoshi Miyake , Masaru Izawa , Satoshi Sakai
发明人： Takashi UEMURA , Kenetsu Yokogawa , Masatoshi Miyake , Masaru Izawa , Satoshi Sakai
IPC分类号： B23K9/00
CPC分类号： H01J37/32082
摘要： The present invention provides a heat treatment apparatus which can reduce a surface roughing of a processed substrate while keeping a heat efficiency high, even in the case of heating a sample to be heated to 1200° C. or higher. The present invention is a heat treatment apparatus carrying out a heat treatment of a sample to be heated, wherein a plasma generated by a glow electric discharge is used as a heating source, and the sample to be heated is indirectly heated.
摘要翻译：本发明提供一种热处理装置，即使在将待加热的样品加热至1200℃以上的情况下，也能够在保持热效率高的同时降低加工基板的表面粗糙化。本发明是一种对待加热样品进行热处理的热处理装置，其中通过辉光放电产生的等离子体被用作加热源，被加热物被间接加热。

23. 发明授权

US09490104B2 Heat treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US09490104B2
公开(公告)日：2016-11-08
申请号：US13550638
申请日：2012-07-17
申请人： Ken'etsu Yokogawa , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
发明人： Ken'etsu Yokogawa , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
IPC分类号： B23K9/00 , H01J37/32 , H01L21/324 , H01L21/67
CPC分类号： H01J37/32091 , H01J37/32522 , H01L21/324 , H01L21/67115
摘要： Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher.The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.
摘要翻译：加热试样的热处理装置包括由等离子体加热的加热板，所述等离子体形成在间隙的区域中以加热试样。

24. 发明申请

US20130112670A1 HEAT TREATMENT APPARATUS 有权
标题翻译：热处理设备
公开(公告)号：US20130112670A1
公开(公告)日：2013-05-09
申请号：US13550638
申请日：2012-07-17
申请人： Ken'etsu YOKOGAWA , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
发明人： Ken'etsu YOKOGAWA , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
IPC分类号： B23K9/00
CPC分类号： H01J37/32091 , H01J37/32522 , H01L21/324 , H01L21/67115
摘要： Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher.The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.
摘要翻译：提供一种热处理装置，其热效率高，即使在1200℃以上的加热条件下，也能够降低被处理基板的表面粗糙度。加热试样的热处理装置包括由等离子体加热的加热板，所述等离子体形成在间隙的区域中以加热试样。

25. 发明申请

US20070023398A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20070023398A1
公开(公告)日：2007-02-01
申请号：US11355165
申请日：2006-02-16
申请人： Hiroyuki Kobayashi , Masatoshi Miyake , Kenetsu Yokogawa , Masaru Izawa
发明人： Hiroyuki Kobayashi , Masatoshi Miyake , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： B23H7/00 , B23H1/00
CPC分类号： H01J37/32678 , H01J37/32027 , H01J37/32082 , H01J37/32706 , H01J2237/335
摘要： A plasma processing apparatus which can remove foreign particles over an object to be processed during or before/after the discharging is provided. The plasma processing apparatus includes a processing chamber; a processing gas supplying unit for supplying a processing gas into the processing chamber, an antenna electrode for supplying a radio frequency electric power into the processing chamber and forming a plasma, a vacuum evacuating unit for evacuating the inside of the processing chamber; a disposing electrode for disposing the object into the processing chamber and holding the object therein; and a DC power supply for supplying a negative electric potential to the antenna electrode.
摘要翻译：提供一种等离子体处理装置，其可以在放电期间或之后去除待处理物体上的异物。等离子体处理装置包括处理室; 用于将处理气体供给到处理室中的处理气体供给单元，用于向处理室供给射频电力并形成等离子体的天线电极，用于抽出处理室内部的真空排气单元; 设置电极，用于将物体放置在处理室中并将物体保持在其中; 以及用于向天线电极提供负电位的直流电源。

26. 发明授权

US07842619B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07842619B2
公开(公告)日：2010-11-30
申请号：US12202692
申请日：2008-09-02
申请人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/00
CPC分类号： H01L21/31138 , H01J37/321 , H01J37/32165 , H01J37/3244 , H01J37/32449 , H01L21/31116 , Y10S438/905
摘要： A plasma processing method includes etching an insulating film of a sample to be processed using plasma generated from etching gas, supplying a large flow of inert gas from above the sample while having the sample mounted on a sample mounting stage, supplying deposit removal gas to only an area near a side wall of a processing chamber, and controlling a plasma density distribution to thereby vary a plasma density at a center area of the processing chamber and a plasma density at an area near the side wall of the processing chamber so as to perform a deposited film removing process for removing the film deposited on the side wall of the processing chamber.
摘要翻译：等离子体处理方法包括使用蚀刻气体产生的等离子体对待处理样品的绝缘膜进行蚀刻，同时将样品安装在样品安装台上，从样品安装台提供大量惰性气体，仅向其提供沉积物去除气体处理室的侧壁附近的区域，并且控制等离子体密度分布，从而改变处理室的中心区域处的等离子体密度和处理室侧壁附近的等离子体密度，以便执行用于去除沉积在处理室的侧壁上的膜的沉积膜去除工艺。

27. 发明申请

US20100029024A1 PLASMA PROCESSING METHOD 有权
标题翻译：等离子体处理方法
公开(公告)号：US20100029024A1
公开(公告)日：2010-02-04
申请号：US12202692
申请日：2008-09-02
申请人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01L21/31138 , H01J37/321 , H01J37/32165 , H01J37/3244 , H01J37/32449 , H01L21/31116 , Y10S438/905
摘要： The invention provides a plasma processing method capable of reducing the damage applied to the low-k film or the underlayer. The method uses a plasma processing apparatus comprising gas supply means 41, 42 for respectively supplying processing gas independently to a center area of the processing chamber 1 and to an area near the sidewall thereof; a sample mounting electrode 13 for mounting a sample W to be processed; a high frequency power supply 21 for generating plasma; an antenna 11; and a plasma generating means 17 for generating plasma in the processing chamber; the method comprising etching an insulating film on the sample W using plasma; and supplying a large flow of inert gas from the center area of the chamber while having the sample W mounted on the sample mounting electrode 13, supplying deposit removal gas to only the area near the side wall of the processing chamber 1 and controlling the plasma density distribution to thereby vary the plasma density at the center area of the processing chamber and the plasma density at the area near the side wall of the processing chamber, so as to perform a deposited film removing process for removing the film deposited on the side wall of the processing chamber.
摘要翻译：本发明提供一种等离子体处理方法，其能够降低对低k膜或底层施加的损伤。该方法使用包括气体供给装置41,42的等离子体处理装置，用于分别独立地向处理室1的中心区域供应处理气体，并且分配到其侧壁附近的区域; 用于安装待处理样品W的样品安装电极13; 用于产生等离子体的高频电源21; 天线11; 以及用于在处理室中产生等离子体的等离子体产生装置17; 该方法包括使用等离子体蚀刻样品W上的绝缘膜; 并且在将样品W安装在样品安装电极13上的同时，从室的中心区域供给大量惰性气体，仅将沉积物去除气体提供给处理室1的侧壁附近的区域，并控制等离子体密度从而改变处理室的中心区域处的等离子体密度和处理室侧壁附近的区域的等离子体密度，从而进行沉积膜去除工艺，以去除沉积在侧壁上的膜处理室。

28. 发明申请

US20130277354A1 METHOD AND APPARATUS FOR PLASMA HEAT TREATMENT 审中-公开
标题翻译：等离子体热处理的方法和装置
公开(公告)号：US20130277354A1
公开(公告)日：2013-10-24
申请号：US13571730
申请日：2012-08-10
申请人： Masatoshi Miyake , Ken'etsu Yokogawa , Takashi Uemura , Masaru Izawa , Satoshi Sakai
发明人： Masatoshi Miyake , Ken'etsu Yokogawa , Takashi Uemura , Masaru Izawa , Satoshi Sakai
IPC分类号： H05H1/48
CPC分类号： H01J37/32522 , H01J37/32724
摘要： There is provided a method for plasma heat treatment that can suppress the degradation of thermal efficiency even in the case where plasma is used to heat a sample at a temperature of 1,200° C. or more. In a method for plasma heat treatment that a sample to be processed is heated by plasma, the method including the steps of: preheating in which a heat treatment chamber is exhausted while preheating an upper electrode and a lower electrode using plasma generated between the upper electrode and the lower electrode; and heat treatment in which the sample to be processed is heated after the preheating step. The upper electrode and the lower electrode are electrodes containing carbon.
摘要翻译：提供了即使在1200℃以上的温度下使用等离子体加热试样的情况下也能够抑制热效率降低的等离子体热处理方法。在等离子体热处理的方法中，待加工的样品被等离子体加热，所述方法包括以下步骤：使用在上电极和下电极之间产生的等离子体预热上热电极和下电极的热处理室被排出的预热和下电极; 以及在预热步骤之后加热被处理样品的热处理。上电极和下电极是含有碳的电极。

29. 发明授权

US08955579B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08955579B2
公开(公告)日：2015-02-17
申请号：US13091770
申请日：2011-04-21
申请人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
发明人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： F28D15/00 , F25D23/12 , F25B39/02 , H01L21/336 , H01L21/24 , H01L21/40 , C23C16/00 , H01L21/67
CPC分类号： F25B39/02 , F28F2210/02 , H01J2237/2001 , H01L21/67109
摘要： There is provided a means for uniformly controlling the in-plane temperature of a semiconductor wafer at high speed in a high heat input etching process. A refrigerant channel structure in a circular shape is formed in a sample stage. Due to a fact that a heat transfer coefficient of a refrigerant is largely changed from a refrigerant supply port to a refrigerant outlet port, the cross sections of the channel structure is structured so as to be increased from a first channel areas towards a second channel areas in order to make the heat transfer coefficient of the refrigerant constant in the refrigerant channel structure. Thereby, the heat transfer coefficient of the refrigerant is prevented from increasing by reducing the flow rate of the refrigerant at a dry degree area where the heat transfer coefficient of the refrigerant is increased. Further, the cross section of the channel structure is structured so as to be reduced from the second channel areas towards a third channel areas, and thereby the heat transfer coefficient of the refrigerant is prevented from decreasing. Accordingly, the heat transfer coefficient of the refrigerant can be uniformed in the channel structure.
摘要翻译：提供了一种用于在高热输入蚀刻工艺中高速均匀地控制半导体晶片的面内温度的装置。在样品台中形成圆形的制冷剂流路结构。由于制冷剂的传热系数从制冷剂供给口向制冷剂排出口发生很大的变化，所以，通道结构的横截面被构造成从第一通道区域向第二通道区域以使制冷剂流路结构中的制冷剂的传热系数恒定。因此，通过降低制冷剂的传热系数增加的干燥区域的制冷剂的流量，可以防止制冷剂的传热系数增加。此外，通道结构的横截面被构造成从第二通道区域朝向第三通道区域减小，从而防止制冷剂的传热系数降低。因此，制冷剂的传热系数可以在通道结构中均匀化。

30. 发明申请

US20120211163A1 PLASMA PROCESSING APPARATUS INCLUDING ETCHING PROCESSING APPARATUS AND ASHING PROCESSING APPARATUS AND PLASMA PROCESSING METHOD USING PLASMA PROCESSING APPARATUS 失效
标题翻译：等离子体处理装置，其中包括蚀刻加工装置和使用等离子体加工装置的匀浆加工装置和等离子体处理方法
公开(公告)号：US20120211163A1
公开(公告)日：2012-08-23
申请号：US13457082
申请日：2012-04-26
申请人： Hiroyuki KOBAYASHI , Masaru Izawa
发明人： Hiroyuki KOBAYASHI , Masaru Izawa
IPC分类号： C23F1/08
CPC分类号： H01J37/32642 , H01J37/32623 , H01J2237/335 , H01L21/67207 , H01L21/68735 , H01L21/68785 , Y10S156/915
摘要： A diameter of a mounting unit of the stage of an ashing processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.
摘要翻译：灰化处理装置的台的安装单元的直径小于蚀刻处理装置的台的安装单元的直径，并且蚀刻处理装置的台的安装单元的直径小于客观物品的直径。

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