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21. 发明申请

US20080237695A1 SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器件
公开(公告)号：US20080237695A1
公开(公告)日：2008-10-02
申请号：US11860956
申请日：2007-09-25
申请人： Tomoaki SHINO , Akihiro Nitayama , Takeshi Hamamoto , Hideaki Aochi , Takashi Ohsawa , Ryo Fukuda
发明人： Tomoaki SHINO , Akihiro Nitayama , Takeshi Hamamoto , Hideaki Aochi , Takashi Ohsawa , Ryo Fukuda
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , G11C11/404 , G11C11/4074 , G11C14/0018 , G11C2211/4016 , H01L21/28282 , H01L27/115 , H01L27/11568 , H01L27/1203 , H01L29/42344 , H01L29/785 , H01L29/78648
摘要： This disclosure concerns a memory comprising a charge trapping film; a gate insulating film; a back gate on the charge trapping film; a front gate on the gate insulating film; and a body region provided between a drain and a source, wherein the memory includes a first storage state for storing data depending on the number of majority carriers in the body region and a second storage state for storing data depending on the amount of charges in the charge trapping film, and the memory is shifted from the first storage state to the second storage state by converting the number of majority carriers in the body region into the amount of charges in the charge trapping film or from the second storage state to the first storage state by converting the amount of charges in the charge trapping film into the number of majority carriers in the body region.
摘要翻译：本公开涉及包含电荷捕获膜的存储器; 栅极绝缘膜; 电荷捕获膜上的后门; 栅极绝缘膜上的前门; 以及设置在漏极和源极之间的体区，其中所述存储器包括用于根据所述身体区域中的多数载体的数量存储数据的第一存储状态和用于根据所述体内区域中的电荷量存储数据的第二存储状态通过将身体区域中的多数载体的数量转换为电荷俘获膜中的电荷量或从第二存储状态到第一存储器，将存储器从第一存储状态转移到第二存储状态通过将电荷俘获膜中的电荷量转换成体区中的多数载体的数量来进行状态。

22. 发明授权

US07759255B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07759255B2
公开(公告)日：2010-07-20
申请号：US11561700
申请日：2006-11-20
申请人： Takeshi Hamamoto , Akihiro Nitayama
发明人： Takeshi Hamamoto , Akihiro Nitayama
IPC分类号： H01L21/31 , H01L21/469 , H01L21/8239
CPC分类号： H01L21/84 , H01L27/108 , H01L27/10802 , H01L27/10894 , H01L27/10897 , H01L27/1203 , H01L29/7841
摘要： In one embodiment of the present invention, a method for manufacturing a semiconductor device includes: forming a to-be-removed layer on a semiconductor substrate; forming a semiconductor layer on the to-be-removed layer; forming a trench that passes through the semiconductor layer to the to-be-removed layer in an SOI region; removing the to-be-removed layer by using the trench and creating a cavity; and forming an insulating film in the cavity.
摘要翻译：在本发明的一个实施例中，一种制造半导体器件的方法包括：在半导体衬底上形成被去除层; 在被去除层上形成半导体层; 在SOI区域中形成穿过所述半导体层到所述被去除层的沟槽; 通过使用沟槽去除待去除的层并产生空腔; 以及在所述空腔中形成绝缘膜。

23. 发明申请

US20070215943A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070215943A1
公开(公告)日：2007-09-20
申请号：US11561700
申请日：2006-11-20
申请人： Takeshi HAMAMOTO , Akihiro Nitayama
发明人： Takeshi HAMAMOTO , Akihiro Nitayama
IPC分类号： H01L27/12
CPC分类号： H01L21/84 , H01L27/108 , H01L27/10802 , H01L27/10894 , H01L27/10897 , H01L27/1203 , H01L29/7841
摘要： In one embodiment of the present invention, a method for manufacturing a semiconductor device includes: forming a to-be-removed layer on a semiconductor substrate; forming a semiconductor layer on the to-be-removed layer; forming a trench that passes through the semiconductor layer to the to-be-removed layer in an SOI region; removing the to-be-removed layer by using the trench and creating a cavity; and forming an insulating film in the cavity
摘要翻译：在本发明的一个实施例中，一种制造半导体器件的方法包括：在半导体衬底上形成被去除层; 在被去除层上形成半导体层; 在SOI区域中形成穿过所述半导体层到所述被去除层的沟槽; 通过使用沟槽去除待去除的层并产生空腔; 以及在所述空腔中形成绝缘膜

24. 发明授权

US06707706B2 Semiconductor memory device and method for manufacturing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US06707706B2
公开(公告)日：2004-03-16
申请号：US10183156
申请日：2002-06-28
申请人： Akihiro Nitayama , Katsuhiko Hieda
发明人： Akihiro Nitayama , Katsuhiko Hieda
IPC分类号： G11C1124
CPC分类号： H01L27/10876 , H01L27/10817 , H01L27/10823 , H01L27/10885 , H01L27/10888 , H01L27/10891 , H01L28/90
摘要： A semiconductor memory device comprises a plurality of columnar portions formed in memory cell array regions on a semiconductor substrate. The columnar portions are isolated from one another by a plurality of trenches, and these trenches have first and second bottoms that are different in depth. The semiconductor device comprises a plurality of cell transistors which include first diffusion layer regions formed in the first bottoms, which are shallower than the second bottoms, second diffusion layer regions formed in surface portions of the columnar portions, and a plurality of gate electrodes which are adjacent to both the first and second diffusion layer regions and extend along at least one side-surface portions of the columnar portions.
摘要翻译：半导体存储器件包括形成在半导体衬底上的存储单元阵列区域中的多个柱状部分。柱状部分通过多个沟槽彼此隔离，并且这些沟槽具有深度不同的第一和第二底部。半导体器件包括多个单元晶体管，其包括形成在第一底部的第一扩散层区域，其比第二底部浅，形成在柱状部分的表面部分中的第二扩散层区域和多个栅电极邻近第一和第二扩散层区域并且沿着柱状部分的至少一个侧表面部分延伸。

25. 发明授权

US5747844A Dynamic semiconductor memory device with higher density bit line/word line layout 失效
公开(公告)号：US5747844A
公开(公告)日：1998-05-05
申请号：US736279
申请日：1996-10-24
申请人： Masami Aoki , Takashi Yamada , Hiroshi Takato , Tohru Ozaki , Katsuhiko Hieda , Akihiro Nitayama
发明人： Masami Aoki , Takashi Yamada , Hiroshi Takato , Tohru Ozaki , Katsuhiko Hieda , Akihiro Nitayama
IPC分类号： H01L21/822 , G11C11/401 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108
CPC分类号： H01L27/10817 , H01L27/0207 , H01L27/10852 , H01L27/10882 , Y10S257/907
摘要： A plurality of bit line contacts provided on one bit line BL are arranged on every other one of spaces each provided between every adjacent two of word lines WL and a plurality of bit line contacts provided on an adjacent bit line BL are arranged on every other one of spaces each provided between every adjacent two of word lines WL which is different from the space in which a corresponding one of the bit line contacts formed on the former bit line is arranged.

26. 发明授权

US5350708A Method of making dynamic random access semiconductor memory device 失效
标题翻译：制作动态随机存取半导体存储器件的方法
公开(公告)号：US5350708A
公开(公告)日：1994-09-27
申请号：US77744
申请日：1993-06-18
申请人： Atsushi Yagishita , Katsuhiko Hieda , Akihiro Nitayama , Fumio Horiguchi
发明人： Atsushi Yagishita , Katsuhiko Hieda , Akihiro Nitayama , Fumio Horiguchi
IPC分类号： H01L27/10 , H01L21/8242 , H01L27/108 , H01L21/70
CPC分类号： H01L27/10841 , H01L27/10823
摘要： A groove, which runs vertically and horizontally, is formed in a substrate, thereby a plurality of silicon pillars are formed in a matrix manner. A field oxidation film is formed on the central portion of the groove. A drain diffusion layer is formed on the upper portion of each silicon pillar, and a source diffusion layer is formed on the bottom portion of the groove. A gate electrode, serving as a word line, a storage node contacting the source diffusion layer, and a cell plate are sequentially buried to enclose the surroundings of each silicon pillar, and a bit line is formed in an uppermost layer, thereby a DRAM cell array is structured.
摘要翻译：在衬底中形成垂直和水平延伸的槽，从而以矩阵形式形成多个硅柱。在槽的中心部分形成场氧化膜。在每个硅柱的上部形成漏极扩散层，在沟槽的底部形成有源极扩散层。用作字线的栅电极，与源极扩散层接触的存储节点和单元板依次被埋置以包围每个硅柱的周围，并且在最上层形成位线，从而形成DRAM单元阵列是结构化的

27. 发明授权

US5049957A MOS type dynamic random access memory 失效
标题翻译： MOS型动态随机存取存储器
公开(公告)号：US5049957A
公开(公告)日：1991-09-17
申请号：US528086
申请日：1990-05-24
申请人： Satoshi Inoue , Akihiro Nitayama , Kazumasa Sunouchi , Fumio Horiguchi
发明人： Satoshi Inoue , Akihiro Nitayama , Kazumasa Sunouchi , Fumio Horiguchi
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： H01L27/10817
摘要： In a semiconductor memory device, a storage node electrode having a cavity is provided such that the inner surface of a storage node electrode is used as a capacitor electrode. In a DRAM fabricating method, a storage node electrode having a cavity is formed by laminating a first conductor layer, an insulating film and a second conductor layer, which in turn are patterned into a desired shape, depositing a third conductor layer on the three-layer pattern, performing anisotropic etching so as to cause the third conductor layer to remain only on the side walls of the pattern to thereby form a box-shaped conductor, forming an opening in a part of the box-shaped conductor, removing the insulating film by an etching to thereby form a cavity.
摘要翻译：在半导体存储器件中，具有空腔的存储节点电极被设置为使得存储节点电极的内表面用作电容器电极。在DRAM制造方法中，通过层叠第一导体层，绝缘膜和第二导体层来形成具有空腔的存储节点电极，第一导体层，绝缘膜和第二导体层又被图案化成所需形状，层状图案，进行各向异性蚀刻，以使第三导体层仅保留在图案的侧壁上，从而形成盒状导体，在盒状导体的一部分中形成开口，去除绝缘膜通过蚀刻从而形成空腔。

28. 发明授权

US08203193B2 Magnetic random access memory and manufacturing method of the same 有权
标题翻译：磁性随机存取存储器及其制造方法相同
公开(公告)号：US08203193B2
公开(公告)日：2012-06-19
申请号：US13163349
申请日：2011-06-17
申请人： Takeshi Kajiyama , Yoshiaki Asao , Akihiro Nitayama
发明人： Takeshi Kajiyama , Yoshiaki Asao , Akihiro Nitayama
IPC分类号： H01L29/82 , G11C11/00 , G11C11/14
CPC分类号： H01L43/08 , B82Y10/00 , H01L27/228
摘要： A magnetic random access memory includes a magnetoresistive effect element which has a fixed layer, a recording layer and a non-magnetic layer provided between the fixed layer and the recording layer and in which the magnetization directions of the fixed layer and the recording layer are brought into a parallel state or an anti-parallel state in accordance with a direction of a current flowing between the fixed layer and the recording layer, a first contact which is connected to the recording layer and in which a contact area between the recording layer and the first contact is smaller than an area of the recording layer, and a cap layer which is provided between the first contact and the recording layer and which directly comes in contact with the first contact and which has a resistance higher than a resistance of the recording layer.
摘要翻译：磁性随机存取存储器包括磁阻效应元件，其具有设置在固定层和记录层之间的固定层，记录层和非磁性层，并且固定层和记录层的磁化方向被带入根据在固定层和记录层之间流动的电流的方向，形成平行状态或反平行状态;第一触点连接到记录层，并且记录层和记录层之间的接触区域第一触点小于记录层的面积，盖层设置在第一触点和记录层之间，并直接与第一触点接触并且具有高于记录层电阻的电阻。

29. 发明申请

US20110248365A1 MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US20110248365A1
公开(公告)日：2011-10-13
申请号：US13163349
申请日：2011-06-17
申请人： Takeshi KAJIYAMA , Yoshiaki Asao , Akihiro Nitayama
发明人： Takeshi KAJIYAMA , Yoshiaki Asao , Akihiro Nitayama
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y10/00 , H01L27/228
摘要： A magnetic random access memory includes a magnetoresistive effect element which has a fixed layer, a recording layer and a non-magnetic layer provided between the fixed layer and the recording layer and in which the magnetization directions of the fixed layer and the recording layer are brought into a parallel state or an anti-parallel state in accordance with a direction of a current flowing between the fixed layer and the recording layer, a first contact which is connected to the recording layer and in which a contact area between the recording layer and the first contact is smaller than an area of the recording layer, and a cap layer which is provided between the first contact and the recording layer and which directly comes in contact with the first contact and which has a resistance higher than a resistance of the recording layer.
摘要翻译：磁性随机存取存储器包括磁阻效应元件，其具有设置在固定层和记录层之间的固定层，记录层和非磁性层，并且固定层和记录层的磁化方向被带入根据在固定层和记录层之间流动的电流的方向，形成平行状态或反平行状态;第一触点连接到记录层，并且记录层和记录层之间的接触区域第一触点小于记录层的面积，盖层设置在第一触点和记录层之间，并直接与第一触点接触并且具有高于记录层电阻的电阻。

30. 发明申请

US20080305588A1 Nand-type semiconductor storage device and method for manufacturing same 失效
标题翻译： N型半导体存储装置及其制造方法
公开(公告)号：US20080305588A1
公开(公告)日：2008-12-11
申请号：US12222143
申请日：2008-08-04
申请人： Takeshi Hamamoto , Akihiro Nitayama
发明人： Takeshi Hamamoto , Akihiro Nitayama
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L21/84 , H01L27/11521 , H01L27/11524 , H01L27/1203
摘要： According to this invention, there is provided a NAND-type semiconductor storage device including a semiconductor substrate, a semiconductor layer formed on the semiconductor substrate, a buried insulating film selectively formed between the semiconductor substrate and the semiconductor layer in a memory transistor formation region, diffusion layers formed on the semiconductor layer in the memory transistor formation region, floating body regions between the diffusion layers, a first insulating film formed on each of the floating body regions, a floating gate electrode formed on the first insulating film, a control electrode on a second insulating film formed on the floating gate electrode, and contact plugs connected to ones of the pairs of diffusion layers which are respectively located at ends of the memory transistor formation region, wherein the ones of the pairs of diffusion layers, which are located at the ends of the memory transistor formation region, are connected to the semiconductor substrate below the contact plugs.
摘要翻译：根据本发明，提供了一种NAND型半导体存储装置，包括半导体衬底，形成在半导体衬底上的半导体层，在存储晶体管形成区域中选择性地形成在半导体衬底和半导体层之间的埋入绝缘膜，形成在存储晶体管形成区域的半导体层上的扩散层，扩散层之间的浮体区域，形成在每个浮体区域上的第一绝缘膜，形成在第一绝缘膜上的浮栅，控制电极形成在浮置栅电极上的第二绝缘膜和连接到分别位于存储晶体管形成区的端部的一对扩散层的接触插塞，其中位于存储晶体管形成区域的端部连接到半导体导体基板在接触塞下方。

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