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21. 发明授权

US07902588B2 Nonvolatile semiconductor memory device and method for manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US07902588B2
公开(公告)日：2011-03-08
申请号：US11846251
申请日：2007-08-28
申请人： Yukie Nishikawa , Akira Takashima , Koichi Muraoka
发明人： Yukie Nishikawa , Akira Takashima , Koichi Muraoka
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L29/42336 , H01L29/513
摘要： A nonvolatile semiconductor memory device includes: a tunneling insulating film; a floating gate electrode; an inter-electrode insulating film, in which an interface facing the floating gate electrode and an interface facing a control gate electrode are defined as the first interface and the second interface, respectively; and a control gate electrode. The inter-electrode insulating film includes one or more first elements selected from rare earth elements, one or more second elements selected from Al, Ti, Zr, Hf, Ta, Mg, Ca, Sr and Ba, and oxygen. A composition ratio of the first element, which is defined as the number of atoms of the first element divided by that of the second element, is changed between the first interface and the second interface, and the composition ratio in the vicinity of the first interface is lower than that in the vicinity of the second interface.
摘要翻译：非易失性半导体存储器件包括：隧道绝缘膜; 浮栅电极; 分别将面对浮置栅极的界面和面对控制栅电极的界面分别定义为第一界面和第二界面的电极间绝缘膜; 和控制栅电极。电极间绝缘膜包括选自稀土元素，选自Al，Ti，Zr，Hf，Ta，Mg，Ca，Sr和Ba中的一种或多种第二元素和氧的一种或多种第一元素。被定义为第一元素的原子数除以第二元素的原子数的第一元素的组成比在第一界面和第二界面之间改变，并且第一界面附近的组成比低于第二界面附近的位置。

22. 发明授权

US07736446B2 Method for manufacturing a lanthanum oxide compound 有权
标题翻译：氧化镧化合物的制造方法
公开(公告)号：US07736446B2
公开(公告)日：2010-06-15
申请号：US12051286
申请日：2008-03-19
申请人： Akira Takashima , Koichi Muraoka
发明人： Akira Takashima , Koichi Muraoka
IPC分类号： C23C16/40
CPC分类号： C23C14/08 , C23C14/24 , C23C14/50 , C23C14/564 , H01L21/31604 , H01L21/31641 , H01L21/31645
摘要： A method for manufacturing a lanthanum oxide compound on a substrate includes: setting the number of H2O molecule, the number of CO molecule and the number of CO2 molecule to one-half or less, one-fifth or less and one-tenth or less per one lanthanum atom, respectively, the H2O molecule, the CO molecule and the CO2 molecule being originated from an H2O gas component, a CO gas component and a CO2 gas component in an atmosphere under manufacture; and supplying a metal raw material containing at least one selected from the group consisting of lanthanum, aluminum, titanium, zirconium and hafnium and an oxygen raw material gas simultaneously for the substrate under the condition that the number of O2 molecule are set to 20 or more per one lanthanum atom, thereby manufacturing the lanthanum oxide compound on the substrate.
摘要翻译：在基材上制造氧化镧化合物的方法包括：将H 2 O分子的数量，CO分子的数目和CO 2分子的数量设定为每分钟的一半以下，五分之一以下，十分之一以下一个镧原子分别来自制造气氛中的H 2 O分子，CO分子和CO 2分子源自H 2 O气体组分，CO气体组分和CO 2气体组分; 在氧分子数为20以上的条件下，向基板供给含有选自镧，铝，钛，锆，铪和氧原料气体中的至少一种的金属原料每一个镧原子，从而在基底上制造氧化镧化合物。

23. 发明授权

US07842996B2 Memory cell of nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器的存储单元
公开(公告)号：US07842996B2
公开(公告)日：2010-11-30
申请号：US12142373
申请日：2008-06-19
申请人： Shoko Kikuchi , Akira Takashima , Naoki Yasuda , Koichi Muraoka
发明人： Shoko Kikuchi , Akira Takashima , Naoki Yasuda , Koichi Muraoka
IPC分类号： H01L29/788 , H01L29/792
CPC分类号： H01L29/7881 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/513
摘要： A memory cell of a nonvolatile semiconductor memory includes a semiconductor region, source/drain areas arranged separately from each other in the semiconductor region, a tunnel insulating film arranged on a channel region between the diffusion areas, a floating gate electrode arranged on the tunnel insulating film, an inter-electrode insulator arranged on the floating gate electrode, and a control gate electrode arranged on the inter-electrode insulator. The inter-electrode insulator includes lanthanoid-based metal Ln, aluminum Al, and oxygen O, and a composition ratio Ln/(Al+Ln) between the lanthanoid-based metal and the aluminum takes a value within the range of 0.33 to 0.39.
摘要翻译：非易失性半导体存储器的存储单元包括半导体区域，在半导体区域中彼此分开排列的源极/漏极区域，布置在扩散区域之间的沟道区域上的隧道绝缘膜，布置在隧道绝缘层上的浮置栅电极布置在浮置栅电极上的电极间绝缘体和布置在电极间绝缘体上的控制栅电极。电极间绝缘体包含镧系金属Ln，铝Al和氧O，镧系金属与铝之间的组成比Ln /（Al + Ln）为0.33〜0.39的范围。

24. 发明申请

US20090206393A1 NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：非易失性存储元件及其制造方法
公开(公告)号：US20090206393A1
公开(公告)日：2009-08-20
申请号：US12388040
申请日：2009-02-18
申请人： Keiko Ariyoshi , Akira Takashima , Shoko Kikuchi , Koichi Muraoka
发明人： Keiko Ariyoshi , Akira Takashima , Shoko Kikuchi , Koichi Muraoka
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/792 , H01L29/40117 , H01L29/4234 , H01L29/513
摘要： A nonvolatile memory element includes a semiconductor region, a source region and a drain region provided in the semiconductor region, a tunnel insulating layer provided on the semiconductor region between the source region and the drain region, a charge storage layer provided on the tunnel insulating layer, a block insulating layer provided on the charge storage layer, and a control gate electrode provided on the block insulating layer. The charge storage layer includes one of an oxide, a nitride and an oxynitride, which contains at least one material selected from the group consisting of Hf, Al, Zr, Ti and a rare-earth metal, and is entirely or partially crystallized. The block insulating layer includes one of an oxide, an oxynitride, a silicate and an aluminate, which contains at least one rare-earth metal.
摘要翻译：非易失性存储元件包括设置在半导体区域中的半导体区域，源极区域和漏极区域，设置在源极区域和漏极区域之间的半导体区域上的隧道绝缘层，设置在隧道绝缘层上的电荷存储层设置在电荷存储层上的块绝缘层和设置在块绝缘层上的控制栅电极。电荷存储层包括氧化物，氮化物和氧氮化物中的一种，其含有选自Hf，Al，Zr，Ti和稀土金属中的至少一种材料，并且完全或部分结晶。该块绝缘层包含含有至少一种稀土金属的氧化物，氮氧化物，硅酸盐和铝酸盐中的一种。

25. 发明申请

US20080315288A1 MEMORY CELL OF NONVOLATILE SEMICONDUCTOR MEMORY 有权
标题翻译：非易失性半导体存储器的存储单元
公开(公告)号：US20080315288A1
公开(公告)日：2008-12-25
申请号：US12142373
申请日：2008-06-19
申请人： Shoko KIKUCHI , Akira Takashima , Naoki Yasuda , Koichi Muraoka
发明人： Shoko KIKUCHI , Akira Takashima , Naoki Yasuda , Koichi Muraoka
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/513
摘要： A memory cell of a nonvolatile semiconductor memory includes a semiconductor region, source/drain areas arranged separately from each other in the semiconductor region, a tunnel insulating film arranged on a channel region between the diffusion areas, a floating gate electrode arranged on the tunnel insulating film, an inter-electrode insulator arranged on the floating gate electrode, and a control gate electrode arranged on the inter-electrode insulator. The inter-electrode insulator includes lanthanoid-based metal Ln, aluminum Al, and oxygen O, and a composition ratio Ln/(Al+Ln) between the lanthanoid-based metal and the aluminum takes a value within the range of 0.33 to 0.39.
摘要翻译：非易失性半导体存储器的存储单元包括半导体区域，在半导体区域中彼此分开排列的源极/漏极区域，布置在扩散区域之间的沟道区域上的隧道绝缘膜，布置在隧道绝缘层上的浮置栅电极布置在浮置栅电极上的电极间绝缘体和布置在电极间绝缘体上的控制栅电极。电极间绝缘体包含镧系金属Ln，铝Al和氧O，镧系金属与铝之间的组成比Ln /（Al + Ln）为0.33〜0.39的范围。

26. 发明申请

US20090107586A1 METHOD FOR MANUFACTURING A LANTHANUM OXIDE COMPOUND 有权
标题翻译：制造氧化铝化合物的方法
公开(公告)号：US20090107586A1
公开(公告)日：2009-04-30
申请号：US12051286
申请日：2008-03-19
申请人： Akira TAKASHIMA , Koichi Muraoka
发明人： Akira TAKASHIMA , Koichi Muraoka
IPC分类号： C23C8/10
CPC分类号： C23C14/08 , C23C14/24 , C23C14/50 , C23C14/564 , H01L21/31604 , H01L21/31641 , H01L21/31645
摘要： A method for manufacturing a lanthanum oxide compound on a substrate includes: setting the number of H2O molecule, the number of CO molecule and the number of CO2 molecule to one-half or less, one-fifth or less and one-tenth or less per one lanthanum atom, respectively, the H2O molecule, the CO molecule and the CO2 molecule being originated from an H2O gas component, a CO gas component and a CO2 gas component in an atmosphere under manufacture; and supplying a metal raw material containing at least one selected from the group consisting of lanthanum, aluminum, titanium, zirconium and hafnium and an oxygen raw material gas simultaneously for the substrate under the condition that the number of O2 molecule are set to 20 or more per one lanthanum atom, thereby manufacturing the lanthanum oxide compound on the substrate.
摘要翻译：在基材上制造氧化镧化合物的方法包括：将H 2 O分子的数量，CO分子的数目和CO 2分子的数量设定为每分钟的一半以下，五分之一以下，十分之一以下一个镧原子分别来自制造气氛中的H 2 O分子，CO分子和CO 2分子源自H 2 O气体组分，CO气体组分和CO 2气体组分; 在氧分子数为20以上的条件下，向基板供给含有选自镧，铝，钛，锆，铪和氧原料气体中的至少一种的金属原料每一个镧原子，从而在基底上制造氧化镧化合物。

27. 发明申请

US20090057750A1 NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：非易失性半导体存储器元件及其制造方法
公开(公告)号：US20090057750A1
公开(公告)日：2009-03-05
申请号：US12049875
申请日：2008-03-17
申请人： Akira TAKASHIMA , Shoko Kikuchi , Koichi Muraoka
发明人： Akira TAKASHIMA , Shoko Kikuchi , Koichi Muraoka
IPC分类号： H01L29/00
CPC分类号： H01L29/7881 , H01L29/40114 , H01L29/40117 , H01L29/42324 , H01L29/4234 , H01L29/517 , H01L29/792
摘要： A nonvolatile semiconductor memory element includes a semiconductor substrate, a source region and a drain region which are provided separately in the semiconductor substrate, a tunnel insulating layer which is provided between the source region and the drain region on the semiconductor substrate, a charge storage layer which is provided on the tunnel insulating layer, a block insulating layer which is provided on the charge storage layer and includes a crystallized lanthanum aluminate layer, and a control gate electrode which is provided on the block insulating layer.
摘要翻译：非易失性半导体存储元件包括分别设置在半导体衬底中的半导体衬底，源极区域和漏极区域，设置在半导体衬底上的源极区域和漏极区域之间的隧道绝缘层，电荷存储层其设置在隧道绝缘层上，块状绝缘层设置在电荷存储层上，并且包含结晶的铝酸镧层，以及设置在块绝缘层上的控制栅电极。

28. 发明授权

US08779502B2 Nonvolatile semiconductor memory 失效
标题翻译：非易失性半导体存储器
公开(公告)号：US08779502B2
公开(公告)日：2014-07-15
申请号：US13316603
申请日：2011-12-12
申请人： Kiwamu Sakuma , Atsuhiro Kinoshita , Masahiro Kiyotoshi , Daisuke Hagishima , Koichi Muraoka
发明人： Kiwamu Sakuma , Atsuhiro Kinoshita , Masahiro Kiyotoshi , Daisuke Hagishima , Koichi Muraoka
IPC分类号： H01L29/792 , H01L29/66 , H01L21/70 , H01L21/336
CPC分类号： H01L29/42328 , H01L21/28273 , H01L21/28282 , H01L27/11521 , H01L27/11524 , H01L27/11551 , H01L27/11568 , H01L27/11578 , H01L29/42344 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/792
摘要： According to one embodiment, a nonvolatile semiconductor memory includes first to n-th (n is a natural number not less than 2) semiconductor layers in a first direction and extend in a second direction, and the semiconductor layers having a stair case pattern in a first end of the second direction, a common semiconductor layer connected to the first to n-th semiconductor layers commonly in the first end of the second direction, first to n-th layer select transistors which are provided in order from the first electrode side between the first electrode and the first to n-th memory strings, and first to n-th impurity regions which make the i-th layer select transistor (i is one of 1 to n) a normally-on state in the first end of the second direction of the i-th semiconductor layer.
摘要翻译：根据一个实施例，非易失性半导体存储器包括在第一方向上的第一至第n（n是不小于2的自然数）半导体层，并且在第二方向上延伸，并且半导体层具有阶梯状图案第二方向的第一端，在第二方向的第一端中共同连接到第一至第n半导体层的公共半导体层，第一至第n层选择晶体管，其从第一电极侧第一电极和第一至第n存储器串以及使第i层选择晶体管（i为1至n之一）的第一至第n杂质区在第一端中的正常导通状态第i个半导体层的第2方向。

29. 发明授权

US08610196B2 Memory including transistors with double floating gate structures 失效
标题翻译：存储器包括具有双浮栅结构的晶体管
公开(公告)号：US08610196B2
公开(公告)日：2013-12-17
申请号：US13608436
申请日：2012-09-10
申请人： Tetsufumi Tanamoto , Kosuke Tatsumura , Kiwamu Sakuma , Atsuhiro Kinoshita , Shinobu Fujita , Koichi Muraoka
发明人： Tetsufumi Tanamoto , Kosuke Tatsumura , Kiwamu Sakuma , Atsuhiro Kinoshita , Shinobu Fujita , Koichi Muraoka
IPC分类号： H01L27/11
CPC分类号： H01L29/42332 , G11C11/412 , G11C14/0063 , H01L27/1104 , H01L29/7881
摘要： In a memory of an embodiment, first and second P-channel transistors are formed on a first semiconductor region, and each of the first and second P-channel transistors has a structure formed by stacking a first insulating film, a first floating gate, a second insulating film, a second floating gate, a third insulating film, and a first control gate in this order on the first semiconductor region. In the memory, first and second N-channel transistors are formed on a second semiconductor region, and each of the first and second N-channel transistors has a structure formed by stacking a fourth insulating film, a third floating gate, a fifth insulating film, a fourth floating gate, a sixth insulating film, and a second control gate in this order on the second semiconductor region.
摘要翻译：在实施例的存储器中，第一和第二P沟道晶体管形成在第一半导体区域上，并且第一和第二P沟道晶体管中的每一个具有通过堆叠第一绝缘膜，第一浮动栅极，第二绝缘膜，第二浮栅，第三绝缘膜和第一控制栅极。在存储器中，第一和第二N沟道晶体管形成在第二半导体区域上，并且第一和第二N沟道晶体管中的每一个具有通过堆叠第四绝缘膜，第三浮栅，第五绝缘膜，第四浮栅，第六绝缘膜和第二控制栅极。

30. 发明授权

US08319271B2 NAND-type nonvolatile semiconductor memory device 有权
标题翻译： NAND型非易失性半导体存储器件
公开(公告)号：US08319271B2
公开(公告)日：2012-11-27
申请号：US13182283
申请日：2011-07-13
申请人： Shoko Kikuchi , Yasushi Nakasaki , Koichi Muraoka
发明人： Shoko Kikuchi , Yasushi Nakasaki , Koichi Muraoka
IPC分类号： H01L29/788
CPC分类号： H01L27/11568 , H01L21/28282 , H01L29/513 , H01L29/517 , H01L29/78
摘要： The present invention provides a high-performance MONOS-type NAND-type nonvolatile semiconductor memory device using an aluminum oxide film as a part of gate insulating film in a select transistor and as a block insulating film in a memory transistor. The NAND-type nonvolatile semiconductor memory device has, on a semiconductor substrate, a plurality of memory cell transistors connected to each other in series and a select transistor. The memory cell transistor includes a first insulating film on the semiconductor substrate, a charge trapping layer, a second insulating film made of aluminum oxide, a first control gate electrode, and a first source/drain region. The select transistor includes a third insulating film on the semiconductor substrate, a fourth insulating film made of an aluminum oxide containing at least one of a tetravalent cationic element, a pentavalent cationic element, and N (nitrogen), a second control gate electrode, and a second source/drain region.
摘要翻译：本发明提供一种在选择晶体管中使用氧化铝膜作为栅绝缘膜的一部分的高性能MONOS型NAND型非易失性半导体存储器件，并且作为存储晶体管中的块绝缘膜。 NAND型非易失性半导体存储器件在半导体衬底上具有串联连接的多个存储单元晶体管和选择晶体管。存储单元晶体管包括半导体衬底上的第一绝缘膜，电荷俘获层，由氧化铝制成的第二绝缘膜，第一控制栅极电极和第一源极/漏极区域。选择晶体管包括半导体衬底上的第三绝缘膜，由包含四价阳离子元素，五价阳离子元素和N（氮）中的至少一种的氧化铝制成的第四绝缘膜，第二控制栅电极和第二源极/漏极区域。

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