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21. 发明申请

US20060251127A1 Communication terminal, message center, time control program storage medium, and remote time setting program storage medium 有权
公开(公告)号：US20060251127A1
公开(公告)日：2006-11-09
申请号：US11175226
申请日：2005-07-07
申请人： Masaya Ishida , Toshifumi Aso , Shinya Kimura , Masahiko Fuse , Kazutaka Satoh , Makoto Shinohara , Makoto Funaoka , Eiji Ishioka , Masayuki Kurisu
发明人： Masaya Ishida , Toshifumi Aso , Shinya Kimura , Masahiko Fuse , Kazutaka Satoh , Makoto Shinohara , Makoto Funaoka , Eiji Ishioka , Masayuki Kurisu
IPC分类号： H04J3/06
CPC分类号： G04R20/14 , H04W4/12
摘要： A communication terminal having a wireless communication facility including sending and receiving a message which is sent to a receiving terminal without a send request from a receiving terminal through a message center, including: a message sending/receiving unit sending and receiving the message; a time control unit controlling current time; a message analysis unit analyzing a message which is sent by a message center, received by the message sending/receiving unit, and includes time information assigned by a message center, and retrieving the time information; and a time setting unit setting in the time control unit a time indicated by the time information retrieved by the message analysis unit as a current time.

22. 发明申请

US20060068516A1 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
标题翻译：氮化物半导体激光光源的制造方法及氮化物半导体激光光源的制造装置
公开(公告)号：US20060068516A1
公开(公告)日：2006-03-30
申请号：US11237946
申请日：2005-09-29
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L21/00 , B29C65/00
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the, cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.
摘要翻译：提供一种生产氮化物半导体激光光源的方法。氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。激光芯片被封装在由杆和盖组成的密封容器中。用于制造该氮化物半导体激光光源的方法具有清洁激光芯片，杆或盖的表面的清洁步骤。在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。在封盖步骤中，激光芯片，杆或盖的清洁表面保持清洁。该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

23. 发明申请

US20050265413A1 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US20050265413A1
公开(公告)日：2005-12-01
申请号：US11127083
申请日：2005-05-12
申请人： Yuhzoh Tsuda , Daisuke Hanaoka , Masaya Ishida
发明人： Yuhzoh Tsuda , Daisuke Hanaoka , Masaya Ishida
IPC分类号： H01L21/00 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/0683 , H01S5/323
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/02476 , H01S5/0683 , H01S5/32341
摘要： A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most −30° C. and an oxygen concentration of at most 100 ppm.
摘要翻译：氮化物半导体激光器件包括具有谐振器端面并能够发射波长最多为420nm的光的氮化物半导体激光元件，连接到氮化物半导体激光元件的散热片，安装有散热片的杆，以及安装在所述杆上的光检测元件，用于检测来自所述氮化物半导体激光元件的激光束。氮化物半导体激光元件，散热器和光检测元件被封闭在与杆接合的盖内，盖内的气氛的露点至多为-30℃，氧浓度为最多100 ppm。

24. 发明申请

US20050244588A1 Method of observing monolayer ultraviolet decomposition process, method of controlling degree of surface decomposition, and patterning method 有权
标题翻译：观察单层紫外分解过程的方法，控制表面分解程度的方法和图案化方法
公开(公告)号：US20050244588A1
公开(公告)日：2005-11-03
申请号：US10913523
申请日：2004-08-09
申请人： Hitoshi Fukushima , Masaya Ishida , Stephen Evans , Kevin Critchley
发明人： Hitoshi Fukushima , Masaya Ishida , Stephen Evans , Kevin Critchley
IPC分类号： G01N23/227 , B05D3/00 , G01N13/02 , G03F7/004 , G03F7/075 , G03F7/16 , G03F7/20 , H01L21/66
CPC分类号： G01N23/2273 , G03F7/0046 , G03F7/0754 , G03F7/165
摘要： Aspects of the invention can provide a method of effectively observing the photodecomposition process of a monolayer in real time. The invention can provide a method of observing the decomposition process of a monolayer when the monolayer is irradiated with UV rays, where the structure of the constituent molecule of the monolayer in an ultrahigh vacuum atmosphere and an oxygen-containing atmosphere respectively can be measured by a molecular structure measuring device during the UV irradiation. The invention can also provide a method of controlling the degree of surface decomposition of the monolayer that controls the ozone concentration accompanying the UV irradiation based on observation results obtained by using the observation method. The invention can further provide a method of patterning the monolayer that employs the control method.
摘要翻译：本发明的方面可以提供一种实时有效观察单层光分解过程的方法。本发明可以提供一种在用UV射线照射单层时观察单层的分解过程的方法，其中分层的超高真空气氛和含氧气氛中的单层构成分子的结构可以通过紫外线照射下的分子结构测量装置。本发明还可以提供一种控制根据通过使用观察方法获得的观察结果来控制伴随UV照射的臭氧浓度的单层的表面分解程度的方法。本发明还可以提供采用该控制方法的单层图案化方法。

25. 发明申请

US20050025205A1 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US20050025205A1
公开(公告)日：2005-02-03
申请号：US10831687
申请日：2004-04-26
申请人： Tatsuya Ryowa , Masaya Ishida , Yukiko Morishita , Takeshi Kamikawa , Kensaku Motoki
发明人： Tatsuya Ryowa , Masaya Ishida , Yukiko Morishita , Takeshi Kamikawa , Kensaku Motoki
IPC分类号： H01L21/205 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01L2224/45144 , H01L2224/48463 , H01L2224/73265 , H01S5/0218 , H01S5/02276 , H01S5/0421 , H01S5/0425 , H01S5/2206 , H01S5/2231 , H01S5/34333 , H01S2301/173 , H01S2304/00 , H01S2304/12 , H01L2924/00
摘要： To prevent deterioration induced by wire bonding in a laser device incorporating a semiconductor laser element having a nitride semiconductor laid on top of a nitride semiconductor substrate, the position at which a wire (301) is bonded to an electrode (113) formed on the top surface of a semiconductor layered structure is located off the area right above a dislocation (crystal defect)-concentrated region (X) of the substrate. Concentration of dislocations in the substrate spreads to the layered structure, producing a dislocation-concentrated region in the part of the layered structure located right above the dislocation-concentrated region of the substrate. If a wire is bonded above this region, the pressure applied when the wire is bonded causes the metal of which the electrode is made to diffuse along the concentrated dislocations, lowering the quality of the layered structure and thus resulting in deterioration of the element. Bonding a wire elsewhere than above the dislocation-concentrated region (X) helps prevent such deterioration.
摘要翻译：为了防止在包含氮化物半导体衬底上的具有氮化物半导体的半导体激光元件的激光器件中导线引起的劣化，导线（301）与形成在顶部上的电极（113）接合的位置半导体层叠结构的表面位于基板的位错（晶体缺陷） - 集中区域（X）正上方的区域的外侧。底物中的位错浓度扩散到层状结构，在位于基底的位错集中区域正上方的层状结构部分中产生位错集中区域。如果在该区域上接合线，则在导线接合时施加的压力使得电极的金属沿着浓集的位错扩散，降低了层状结构的质量，从而导致元件的劣化。将电线连接到位于位错集中区域（X）以上的电线有助于防止这种变质。

26. 发明授权

US06654159B2 Method for manufacturing electrophoretic device and method for manufacturing electronic device 有权
公开(公告)号：US06654159B2
公开(公告)日：2003-11-25
申请号：US10081747
申请日：2002-02-22
申请人： Hideyuki Kawai , Masaya Ishida
发明人： Hideyuki Kawai , Masaya Ishida
IPC分类号： G02B2600
CPC分类号： B82Y30/00 , G02F1/167
摘要： In order to form an electrophoretic layer containing microcapsules at a desired region readily and accurately, a region having lyophobicity or lyophilicity is formed on a member, and a microcapsule dispersion is then applied onto the member.

27. 发明授权

US06610552B2 Method of manufacturing organic EL element 有权
公开(公告)号：US06610552B2
公开(公告)日：2003-08-26
申请号：US09820759
申请日：2001-03-30
申请人： Natsuo Fujimori , Masaya Ishida
发明人： Natsuo Fujimori , Masaya Ishida
IPC分类号： H01L2100
CPC分类号： H01L51/0005 , H01L51/5012
摘要： The invention ensures that a liquid is placed in a predetermined region (without being placed in an adjacent region) with a uniform thickness in the region, when a light emitting layer constituting an organic EL element is placed by, for example, ink jet process. Thin SiO2 film pattern having an opening is formed on an ITO electrode. Next, ultrathin organic film pattern having an opening is formed on a thin SiO2 film pattern. The surface of the ultrathin organic film pattern becomes repellent to liquid. Hole transporting layer is formed in the opening of the ultrathin organic film pattern, and then liquid containing a material for the formation of light emitting layer is discharged thereon by ink jet process. Fluid does not remain on the surface of the ultrathin organic film pattern and instead enters the opening of the ultrathin organic film pattern.

28. 发明授权

US06198112B1 III-V compound semiconductor luminescent device 失效
标题翻译： III-V族化合物半导体发光装置
公开(公告)号：US06198112B1
公开(公告)日：2001-03-06
申请号：US08867274
申请日：1997-06-02
申请人： Masaya Ishida , Shiro Sakai
发明人： Masaya Ishida , Shiro Sakai
IPC分类号： H01L2906
CPC分类号： B82Y20/00 , H01L29/155 , H01L33/06 , H01L33/30 , H01L33/32
摘要： The present invention provides a III-V compound semiconductor having a laminated superlattice structure in which a first monoatomic layer and a second monoatomic layer are regularly laminated, the first monoatomic layer being formed by laminating 1 atomic layer of a group III atom selected from Al, Ga and In and 1 atomic layer of a group V atom selected from P, As and Sb, the second monoatomic layer being formed by laminating 1 atomic layer of the group III atom and 1 atomic layer of a nitrogen atom, and a semiconductor device using the same.
摘要翻译：本发明提供具有层叠超晶格结构的III-V族化合物半导体，其中规则层叠有第一单原子层和第二单原子层，第一单原子层通过层叠1个选自Al， Ga和In以及选自P，As和Sb的V族原子的1原子层，通过层叠1族原子层和1原子层的氮原子而形成的第2单原子层，使用一样。

29. 发明授权

US08287760B2 Light-emitting apparatus, phosphorescent portion, and method of producing the same 有权
标题翻译：发光装置，磷光部分及其制造方法
公开(公告)号：US08287760B2
公开(公告)日：2012-10-16
申请号：US12710105
申请日：2010-02-22
申请人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
发明人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
IPC分类号： F21K2/00
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
摘要翻译：由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。荧光体由体积为2 800nm 3以下的微细晶体形式的III-V族半导体形成。从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。

30. 发明授权

US08253240B2 Cap member and semiconductor device employing same 有权
标题翻译：盖构件和使用其的半导体器件
公开(公告)号：US08253240B2
公开(公告)日：2012-08-28
申请号：US12292672
申请日：2008-11-24
申请人： Masaya Ishida , Daisuke Hanaoka , Takeshi Horiguchi
发明人： Masaya Ishida , Daisuke Hanaoka , Takeshi Horiguchi
IPC分类号： H01L23/12
CPC分类号： H01S5/02212 , H01L2224/48091 , H01L2924/19107 , H01S5/02296 , H01L2924/00014
摘要： A cap member capable of alleviating degradation of reliability and improving fabrication yields is provided. The cap member has a cylindrical side wall portion, a top face portion closing one end of the side wall portion and having a light exit hole formed therein to allow extraction of laser light from a semiconductor laser chip; a light transmission window fitted to the top face portion to stop the light exit hole, and a flange portion arranged at the other end of the side wall portion and welded on the upper face of a stem on which the semiconductor laser chip is mounted. A groove portion is formed in an inner surface of the top face portion, and this groove portion makes part of the top face portion in a predetermined region less thick than the other part thereof.
摘要翻译：提供了能够减轻可靠性降低并提高制造成品率的盖构件。盖构件具有圆筒形侧壁部分，顶面部分，其封闭侧壁部分的一端并且具有形成在其中的光出射孔，以允许从半导体激光芯片提取激光; 安装在顶面部上以阻止光射出孔的光透射窗，以及布置在侧壁部分的另一端并焊接在其上安装半导体激光芯片的杆的上表面上的凸缘部分。在顶面部的内表面形成有槽部，该槽部使顶面部的一部分成为比其他部分厚的规定区域。

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