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21. 发明申请

US20110278596A1 Epitaxial silicon carbide monocrystalline substrate and method of production of same 审中-公开
标题翻译：外延碳化硅单晶基板及其生产方法相同
公开(公告)号：US20110278596A1
公开(公告)日：2011-11-17
申请号：US13138270
申请日：2010-01-29
申请人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakasu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakasu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： H01L29/24 , C30B25/02
CPC分类号： H01L21/02609 , C23C16/325 , C30B25/14 , C30B25/186 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/0262 , H01L21/02634
摘要： The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same.
摘要翻译：本发明提供一种外延SiC单晶衬底，其具有使用具有6°或更小的偏离角的衬底在外延生长中抑制发生步骤聚集的高质量外延膜的外延SiC单晶衬底及其制造方法，即外延该外延碳化硅单晶衬底由形成有碳化硅单晶薄膜的偏离角为6°以下的碳化硅单晶衬底构成，其特征在于，所述碳化硅单晶薄膜的表面具有 0.5nm以下的表面粗糙度（Ra值）及其制造方法。

22. 发明申请

US20050160965A1 Seed crystal of silicon carbide single crystal and method for producing ingot using same 审中-公开
标题翻译：碳化硅单晶晶种及其制造方法
公开(公告)号：US20050160965A1
公开(公告)日：2005-07-28
申请号：US10509923
申请日：2003-03-31
申请人： Noboru Ohtani , Masakazu Katsuno , Tatsuo Fujimoto
发明人： Noboru Ohtani , Masakazu Katsuno , Tatsuo Fujimoto
IPC分类号： C30B23/00 , C30B25/00 , C30B25/20 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C30B1/00
CPC分类号： C30B25/20 , C30B23/00 , C30B23/005 , C30B25/00 , C30B29/36
摘要： The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed crystal consisting of a silicon carbide single crystal is inclined at an angle ranging from 3 degrees or more to 60 degrees or less with respect to the (11-20) face to a direction inclined at an angle ranging from −45 degrees or more to 45 degrees or less from a direction to the [1-100] direction. By performing crystal growth using such a seed crystal, a high quality silicon carbide single crystal ingot can be obtained. According to the present invention, it is possible to obtain material consisting of a silicon carbide single crystal of favorable quality, which has few crystal defects such as micropipe defects and stacking faults, and the diameter is suitable for practical application.
摘要翻译：本发明涉及一种由适用于制造用于电力装置的基板（晶片），高频装置等的碳化硅单晶构成的晶种及其制造方法。由碳化硅单晶构成的晶种的单晶生长面以相对于（11-20）面为3度以上至60度以下的角度倾斜至倾斜角度范围的方向从<0001>方向到[1-100]方向从-45度以上到45度以下。通过使用这样的晶种进行晶体生长，可以得到高质量的碳化硅单晶锭。根据本发明，可以获得由具有很少晶体缺陷如微管缺陷和堆垛层错的质量好的碳化硅单晶组成的材料，其直径适用于实际应用。

23. 发明申请

US20100083897A1 Seed crystal consisting of silicon carbide single crysatal and method for producing ingot using the same 审中-公开
标题翻译：由碳化硅单晶制成的晶种晶体及其制造方法
公开(公告)号：US20100083897A1
公开(公告)日：2010-04-08
申请号：US12592808
申请日：2009-12-02
申请人： Noboru Ohtani , Masakazu Katsuno , Tatsuo Fujimoto
发明人： Noboru Ohtani , Masakazu Katsuno , Tatsuo Fujimoto
IPC分类号： C30B23/02
CPC分类号： C30B25/20 , C30B23/00 , C30B23/005 , C30B25/00 , C30B29/36
摘要： The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed crystal consisting of a silicon carbide single crystal is inclined at an angle ranging from 3 degrees or more to 60 degrees or less with respect to the (11-20) face to a direction inclined at an angle ranging from −45 degrees or more to 45 degrees or less from a direction to the [1-100] direction. By performing crystal growth using such a seed crystal, a high quality silicon carbide single crystal ingot can be obtained. According to the present invention, it is possible to obtain material consisting of a silicon carbide single crystal of favorable quality, which has few crystal defects such as micropipe defects and stacking faults, and the diameter is suitable for practical application.
摘要翻译：本发明涉及一种由适用于制造用于电力装置的基板（晶片），高频装置等的碳化硅单晶构成的晶种及其制造方法。由碳化硅单晶构成的晶种的单晶生长面以相对于（11-20）面为3度以上至60度以下的角度倾斜至倾斜角度范围的方向从<0001>方向到[1-100]方向从-45度以上到45度以下。通过使用这样的晶种进行晶体生长，可以得到高质量的碳化硅单晶锭。根据本发明，可以获得由具有很少晶体缺陷如微管缺陷和堆垛层错的质量好的碳化硅单晶组成的材料，其直径适用于实际应用。

24. 发明申请

US20080020212A1 Seed crystal consisting of silicon carbide carbide single crystal and method for producing ingot using the same 审中-公开
标题翻译：由碳化硅单晶构成的晶种及使用其制造锭的方法
公开(公告)号：US20080020212A1
公开(公告)日：2008-01-24
申请号：US11901077
申请日：2007-09-13
申请人： Noboru Ohtani , Masakazu Katsuno , Tatsuo Fujimoto
发明人： Noboru Ohtani , Masakazu Katsuno , Tatsuo Fujimoto
IPC分类号： C01B31/36 , B32B9/04
CPC分类号： C30B25/20 , C30B23/00 , C30B23/005 , C30B25/00 , C30B29/36
摘要： The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed crystal consisting of a silicon carbide single crystal is inclined at an angle ranging from 3 degrees or more to 60 degrees or less with respect to the (11-20) face to a direction inclined at an angle ranging from −45 degrees or more to 45 degrees or less from a direction to the [1-100] direction. By performing crystal growth using such a seed crystal, a high quality silicon carbide single crystal ingot can be obtained. According to the present invention, it is possible to obtain material consisting of a silicon carbide single crystal of favorable quality, which has few crystal defects such as micropipe defects and stacking faults, and the diameter is suitable for practical application.
摘要翻译：本发明涉及一种由适用于制造用于电力装置的基板（晶片），高频装置等的碳化硅单晶构成的晶种及其制造方法。由碳化硅单晶构成的晶种的单晶生长面以相对于（11-20）面为3度以上至60度以下的角度倾斜至倾斜角度范围的方向从<0001>方向到[1-100]方向从-45度以上到45度以下。通过使用这样的晶种进行晶体生长，可以得到高质量的碳化硅单晶锭。根据本发明，可以获得由具有很少晶体缺陷如微管缺陷和堆垛层错的质量好的碳化硅单晶组成的材料，其直径适用于实际应用。

25. 发明申请

US20100089311A1 Seed crystal consisting of silicon carbide single crystal and method for producing ingot using the same 审中-公开
标题翻译：由碳化硅单晶构成的晶种及使用其制造锭的方法
公开(公告)号：US20100089311A1
公开(公告)日：2010-04-15
申请号：US12653229
申请日：2009-12-10
申请人： Noboru Ohtani , Masakazu Katsuno , Tatsuo Fujimoto
发明人： Noboru Ohtani , Masakazu Katsuno , Tatsuo Fujimoto
IPC分类号： C30B23/02
CPC分类号： C30B25/20 , C30B23/00 , C30B23/005 , C30B25/00 , C30B29/36
摘要： The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed crystal consisting of a silicon carbide single crystal is inclined at an angle ranging from 3 degrees or more to 60 degrees or less with respect to the (11-20) face to a direction inclined at an angle ranging from −45 degrees or more to 45 degrees or less from a direction to the [1-100] direction. By performing crystal growth using such a seed crystal, a high quality silicon carbide single crystal ingot can be obtained. According to the present invention, it is possible to obtain material consisting of a silicon carbide single crystal of favorable quality, which has few crystal defects such as micropipe defects and stacking faults, and the diameter is suitable for practical application.
摘要翻译：本发明涉及一种由适用于制造用于电力装置的基板（晶片），高频装置等的碳化硅单晶构成的晶种及其制造方法。由碳化硅单晶构成的晶种的单晶生长面以相对于（11-20）面为3度以上至60度以下的角度倾斜至倾斜角度范围的方向从<0001>方向到[1-100]方向从-45度以上到45度以下。通过使用这样的晶种进行晶体生长，可以得到高质量的碳化硅单晶锭。根据本发明，可以获得由具有很少晶体缺陷如微管缺陷和堆垛层错的质量好的碳化硅单晶组成的材料，其直径适用于实际应用。

26. 发明授权

US08795624B2 Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same 有权
标题翻译：单晶碳化硅锭，单晶碳化硅晶圆及其制造方法相同
公开(公告)号：US08795624B2
公开(公告)日：2014-08-05
申请号：US11663887
申请日：2005-10-05
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
IPC分类号： C01B31/36 , H01L21/00 , B01J3/04 , H01B1/04 , H01B1/00 , H01L29/16 , H01L21/02 , C30B13/00 , C30B21/04 , C30B28/08
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译：提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

27. 发明申请

US20070262322A1 Monocrystalline Silicon Carbide Ingot, Monocrystalline Silicon Carbide Wafer and Method of Manufacturing the Same 有权
标题翻译：单晶碳化硅锭，单晶碳化硅晶片及其制造方法
公开(公告)号：US20070262322A1
公开(公告)日：2007-11-15
申请号：US11663887
申请日：2005-10-05
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
IPC分类号： C30B23/00 , H01L29/15
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译：提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度为50倍或小于掺杂剂元素的最小浓度。还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 -3Ω以上。还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。升华材料包括含有掺杂剂元素的固体材料，含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

28. 发明授权

US08178389B2 Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same 有权
标题翻译：单晶碳化硅锭，单晶碳化硅晶圆及其制造方法相同
公开(公告)号：US08178389B2
公开(公告)日：2012-05-15
申请号：US12708124
申请日：2010-02-18
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
IPC分类号： H01L21/00
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译：提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

29. 发明授权

US08673254B2 Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same 有权
标题翻译：单晶碳化硅锭，单晶碳化硅晶圆及其制造方法相同
公开(公告)号：US08673254B2
公开(公告)日：2014-03-18
申请号：US13040783
申请日：2011-03-04
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
IPC分类号： C30B29/36
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译：提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

30. 发明授权

US07794842B2 Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same 有权
标题翻译：碳化硅单晶，碳化硅单晶晶片及其制造方法
公开(公告)号：US07794842B2
公开(公告)日：2010-09-14
申请号：US10589680
申请日：2004-12-27
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
IPC分类号： B32B9/04 , B32B13/04 , B32B9/00 , B32B19/00 , C04B35/52 , C04B35/56
CPC分类号： C30B29/36 , C30B23/00
摘要： The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1 ×1015/cm3 or more and containing vanadium in an amount less than said uncompensated impurity concentration, silicon carbide single crystal wafer obtained by processing and polishing the silicon carbide single crystal and having an electrical resistivity at room temperature of 5×103 Ωcm or more, and a method of production of a silicon carbide single crystal.
摘要翻译：本发明提供一种高电阻率，高质量，大尺寸的SiC单晶，SiC单晶晶片及其制造方法，即含有原子序数密度为1×1015的未补偿杂质的碳化硅单晶 / cm3以上，并且含有小于所述未补偿杂质浓度的钒，通过在室温下加工和研磨碳化硅单晶而获得的电阻率为5×10 3Ω·cm以上的碳化硅单晶晶片，以及碳化硅单晶的制造方法。

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