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21. 发明授权

US06593599B1 Light-emitting semiconductor device using gallium nitride group compound 失效
公开(公告)号：US06593599B1
公开(公告)日：2003-07-15
申请号：US09417778
申请日：1999-10-14
申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
发明人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025
摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

22. 发明授权

US06362017B1 Light-emitting semiconductor device using gallium nitride group compound 失效
标题翻译：使用氮化镓族化合物的发光半导体装置
公开(公告)号：US06362017B1
公开(公告)日：2002-03-26
申请号：US09586607
申请日：2000-06-02
申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
发明人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
IPC分类号： H01L2100
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025
摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
摘要翻译：这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法，通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

23. 发明授权

US5205905A Dry etching method for semiconductor 失效
标题翻译：半导体干蚀刻方法
公开(公告)号：US5205905A
公开(公告)日：1993-04-27
申请号：US708883
申请日：1991-05-30
申请人： Masahiro Kotaki , Katsuhide Manabe , Masaki Mori , Masafumi Hashimoto
发明人： Masahiro Kotaki , Katsuhide Manabe , Masaki Mori , Masafumi Hashimoto
IPC分类号： H01L21/302 , H01L21/285 , H01L21/306 , H01L21/3065 , H01L21/308 , H01L33/12 , H01L33/32 , H01L33/40
CPC分类号： H01L33/32 , H01L21/28575 , H01L21/30621 , H01L21/3081 , H01L33/007
摘要： A dry etching method for Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.1) semiconductor uses plasma of a boron trichloride (BCl.sub.3) gas. The etching rate of the method is 490 .ANG./min. No crystal defect is produced in the etched semiconductor by the dry etching with the plasma of a BCl.sub.3 gas. After etching with the plasma of a BCl.sub.3 gas, the semiconductor is successively etched by an inert gas. The electrode formed on the etched surface is contacted ohmicly with the semiconductor. Ohmic contact can be obtained without sintering. An LED is produced by the dry etching method. The LED comprises a substrate, an n-layer (Al.sub.x Ga.sub.1-x N; 0.ltoreq.x

24. 发明授权

US4946548A Dry etching method for semiconductor 失效
标题翻译：半导体干蚀刻法
公开(公告)号：US4946548A
公开(公告)日：1990-08-07
申请号：US338855
申请日：1989-04-17
申请人： Masahiro Kotaki , Masafumi Hashimoto
发明人： Masahiro Kotaki , Masafumi Hashimoto
IPC分类号： H01L21/306 , H01L21/308
CPC分类号： H01L21/308 , H01L21/30621
摘要： A dry etching method for Al.sub.x Ga.sub.1-x N(0.ltoreq.x.ltoreq.1) semiconductor is disclosed. The method includes a first method using plasma of carbon tetrachloride (CCl.sub.4) gas, and a second method using plasma of dichlorodifluoromethane (CCl.sub.2 F.sub.2) gas. The etching speed of the former method was 430 .ANG./min. and the etching speed of the latter method was 625 .ANG./min. Also, no crystal defect was produced in the above-mentioned semiconductor by the above-mentioned etching.
摘要翻译：公开了一种用于Al x Ga 1-x N（0≤x≤1）半导体的干蚀刻方法。该方法包括使用四氯化碳（CCl 4）气体的等离子体的第一种方法，以及使用二氯二氟甲烷（CCl 2 F 2）气体的等离子体的第二种方法。前一种方法的蚀刻速度为430安培/分钟。后一种方法的蚀刻速度为625安培/分钟。此外，通过上述蚀刻在上述半导体中不产生晶体缺陷。

25. 发明申请

US20100045167A1 SURFACE LIGHT-EMITTING DEVICE AND ILLUMINATING APPARATUS AND DISPLAY APPARATUS INCLUDING THE SAME 审中-公开
标题翻译：表面发光装置和照明装置及其显示装置
公开(公告)号：US20100045167A1
公开(公告)日：2010-02-25
申请号：US12536776
申请日：2009-08-06
申请人： Yasuki Kawashima , Masafumi Hashimoto , Junichi Yamanari
发明人： Yasuki Kawashima , Masafumi Hashimoto , Junichi Yamanari
IPC分类号： H01J1/62
CPC分类号： H01L51/52 , H01L51/5262 , H01L51/5268 , H01L51/5271
摘要： There is provided a surface light-emitting device that improves the light emission efficiency and an illuminating apparatus and a display apparatus that include the surface light-emitting element. A surface light-emitting device includes transparent substrate 1 including a central thick portion 1b protruding in the direction of light emission and a periphery thin portion 1a to be held by a holder; transparent electrode 2 laminated on transparent substrate 1 and functioning as an anode; metal electrode 6 opposite transparent electrode 2 and functioning as a cathode; and light-emitting layer 4 sandwiched between transparent electrode 2 and metal electrode 6.
摘要翻译：提供了提高发光效率的表面发光装置和包括表面发光元件的照明装置和显示装置。表面发光装置包括透明基板1，该透明基板1包括在发光方向上突出的中央厚部1b和由保持器保持的周边薄部1a; 透明电极2层叠在透明基板1上并用作阳极; 金属电极6与透明电极2相对并用作阴极; 以及夹在透明电极2和金属电极6之间的发光层4。

26. 发明授权

US07598848B2 Apparatus and method of pedestrian recognition 有权
标题翻译：行人识别装置与方法
公开(公告)号：US07598848B2
公开(公告)日：2009-10-06
申请号：US11804976
申请日：2007-05-21
申请人： Kiyokazu Takagi , Masafumi Hashimoto
发明人： Kiyokazu Takagi , Masafumi Hashimoto
IPC分类号： B60Q1/00
CPC分类号： G06K9/00369 , G06K9/00805
摘要： An apparatus having a laser radar is used to recognize a pedestrian by detecting a position of reflective objects, mapping the objects in a two-dimensional coordinate system, determining whether the objects are moving, and grouping moving objects closely located with each other. Based on a size of an object group, the pedestrian associated with the object group is accurately recognized.
摘要翻译：具有激光雷达的装置用于通过检测反射物体的位置，在二维坐标系中映射对象，确定物体是否移动，以及将彼此紧密定位的移动物体分组来识别行人。基于对象组的大小，准确地识别与对象组相关联的行人。

27. 发明申请

US20090142607A1 COPPER CLAD LAMINATE 审中-公开
标题翻译：铜箔层压板
公开(公告)号：US20090142607A1
公开(公告)日：2009-06-04
申请号：US11910610
申请日：2006-04-04
申请人： Kohji Narui , Masafumi Hashimoto , Takuro Kochiyama
发明人： Kohji Narui , Masafumi Hashimoto , Takuro Kochiyama
IPC分类号： B32B15/08
CPC分类号： B32B15/08 , B29C48/08 , B29C48/18 , B29K2079/08 , B29K2105/256 , B32B15/20 , B32B27/281 , B32B37/04 , B32B2250/03 , B32B2250/40 , B32B2264/0214 , B32B2307/306 , B32B2307/54 , B32B2309/02 , B32B2309/105 , B32B2311/12 , B32B2379/08 , B32B2457/00 , B32B2457/08 , H05K1/0346 , H05K1/036 , H05K3/022 , H05K3/025 , H05K2201/0129 , H05K2201/0154 , H05K2201/0212 , H05K2201/0355 , H05K2203/068 , Y10T428/31681
摘要： A copper-clad laminate is prepared by laminating a copper foil on one side or both sides of a polyimide film by thermocompression bonding. The flexibility of the copper-clad laminate is remarkably improved by employing a polyimide film having a thickness of 5 to 20 μm and a copper foil having a thickness of 1 to 18 μm.
摘要翻译：通过热压接在聚酰亚胺膜的一面或两面层压铜箔来制备覆铜层压板。通过使用厚度为5至20μm的聚酰亚胺膜和厚度为1至18μm的铜箔，显着提高了覆铜层压板的柔性。

28. 发明授权

US07468897B2 Rectifier without active switches 有权
标题翻译：整流器无有源开关
公开(公告)号：US07468897B2
公开(公告)日：2008-12-23
申请号：US10580272
申请日：2004-11-18
申请人： Nobuhiro Nakamura , Masafumi Hashimoto
发明人： Nobuhiro Nakamura , Masafumi Hashimoto
IPC分类号： H02H7/125
CPC分类号： H02M7/06
摘要： In this power converter, a first capacitor for stepping down of voltage, a first diode for half-wave rectification, and a second capacitor for smoothing are interposed between first and second input connections for input of AC voltage; and a second diode for discharge of the first capacitor is interposed between the second input connection and an input end of the first diode. AC voltage supplied from an AC power supply is divided (stepped down) by the first and second capacitors, rectified to DC voltage by the first diode, smoothed by the second capacitor, and supplied, as an output voltage defined by Zener diodes, to the load side through the first and second output connections.
摘要翻译：在该功率转换器中，用于输入交流电压的第一和第二输入连接之间插入用于降压的第一电容器，用于半波整流的第一二极管和用于平滑的第二电容器; 并且用于放电第一电容器的第二二极管被插入在第二输入连接和第一二极管的输入端之间。由交流电源提供的交流电压由第一和第二电容器分压（降压），由第一二极管整流为直流电压，由第二电容器平滑，并作为齐纳二极管定义的输出电压提供给负载侧通过第一和第二输出连接。

29. 发明申请

US20070196675A1 Adhesion-Enhanced Polyimide Film, Process for Its Production, And Laminated Body 有权
标题翻译：粘附强化聚酰亚胺薄膜，其生产工艺及层压体
公开(公告)号：US20070196675A1
公开(公告)日：2007-08-23
申请号：US10591749
申请日：2005-03-02
申请人： Masafumi Hashimoto , Takeshi Uekido , Toshiyuki Nishino , Toshihiko Anno
发明人： Masafumi Hashimoto , Takeshi Uekido , Toshiyuki Nishino , Toshihiko Anno
IPC分类号： B32B15/08 , B32B27/00 , B05D3/02
CPC分类号： B32B27/281 , B32B15/08 , B32B27/08 , B32B2307/306 , B32B2379/08 , Y10T428/31681 , Y10T428/31721
摘要： An adhesion-enhanced polyimide film which includes a core layer composed of a polyimide (a) having high rigidity and a low linear expansion coefficient, at least one side of which has a thin-layer formed by heating a coated layer including a heat-resistant surface treatment agent and a polyimide precursor which yields a highly heat-resistant amorphous polyimide (B).
摘要翻译：一种粘合增强聚酰亚胺膜，其包括由具有高刚性和低线膨胀系数的聚酰亚胺（a）构成的芯层，其至少一侧具有通过加热包括耐热性的涂层而形成的薄层表面处理剂和产生高耐热性无定形聚酰亚胺（B）的聚酰亚胺前体。

30. 发明申请

US20070133237A1 Power converter 有权
标题翻译：电源转换器
公开(公告)号：US20070133237A1
公开(公告)日：2007-06-14
申请号：US10580272
申请日：2004-11-18
申请人： Nobuhiro Nakamura , Masafumi Hashimoto
发明人： Nobuhiro Nakamura , Masafumi Hashimoto
IPC分类号： H02M3/06
CPC分类号： H02M7/06
摘要： In this power converter, a first capacitor for stepping down of voltage, a first diode for half-wave rectification, and a second capacitor for smoothing are interposed between first and second input connections for input of AC voltage; and a second diode for discharge of the first capacitor is interposed between the second input connection and an input end of the first diode. AC voltage supplied from an AC power supply is divided (stepped down) by the first and second capacitors, rectified to DC voltage by the first diode, smoothed by the second capacitor, and supplied, as an output voltage defined by Zener diodes, to the load side through the first and second output connections.
摘要翻译：在该功率转换器中，用于输入交流电压的第一和第二输入连接之间插入用于降压的第一电容器，用于半波整流的第一二极管和用于平滑的第二电容器; 并且用于放电第一电容器的第二二极管被插入在第二输入连接和第一二极管的输入端之间。由交流电源提供的交流电压由第一和第二电容器分压（降压），由第一二极管整流为直流电压，由第二电容器平滑，并作为齐纳二极管定义的输出电压提供给负载侧通过第一和第二输出连接。

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