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21. 发明授权

US08456076B2 Electron emitting source and manufacturing method of electron emitting source 有权
标题翻译：电子发射源和电子发射源的制造方法
公开(公告)号：US08456076B2
公开(公告)日：2013-06-04
申请号：US12745316
申请日：2008-07-11
申请人： Toshiyuki Morishita , Yoshinori Terui
发明人： Toshiyuki Morishita , Yoshinori Terui
IPC分类号： H01J1/15 , H01J19/08 , H01K1/02
CPC分类号： H01J37/06 , H01J37/065 , H01J2237/06308 , H01J2237/06375
摘要： An electron emitting source capable of preventing increase in an inter-terminal resistance and a manufacturing method of the electron emitting source. The electron emitting source comprises an electron emitting chip made of rare-earth hexaboride, and a heater constituted by a carbonaceous member for holding and heating the electron emitting chip, wherein an electrically conductive substance is provided in a gap between the electron emitting chip and the heater.
摘要翻译：能够防止端子间电阻增加的电子发射源和电子发射源的制造方法。电子发射源包括由稀土六硼化物制成的电子发射芯片和由用于保持和加热电子发射芯片的碳质元件构成的加热器，其中导电物质设置在电子发射芯片和加热器。

22. 发明授权

US07799588B2 Method of manufacturing the optical device by a stopper to form an oxide block 有权
标题翻译：通过塞子制造光学器件以形成氧化物块的方法
公开(公告)号：US07799588B2
公开(公告)日：2010-09-21
申请号：US11783434
申请日：2007-04-10
申请人： Junji Oohara , Hisaya Katoh , Toshiyuki Morishita , Yukihiro Takeuchi
发明人： Junji Oohara , Hisaya Katoh , Toshiyuki Morishita , Yukihiro Takeuchi
IPC分类号： H01L21/00
CPC分类号： G02B3/06 , G02B6/124 , G03F7/0005
摘要： A method of manufacturing an optical device includes: a first step of forming an optical-device forming body that includes a plurality of columnar structures arranged in an arrangement direction on a substrate surface via a trench and an outline structure connected to and containing therein the plurality of columnar structures; a second step of oxidizing the optical-device forming body from a state where the optical-device forming body starts to be oxidized to a state where the columnar structure is oxidized; and a third step in which an unoxidized residual part of the outline structure in the second step is oxidized after the second step so as to form an oxidized body. Furthermore, the third step includes restraining the outline structure from being deformed with respect to at least the arrangement direction of the columnar structures in the third step.
摘要翻译：一种制造光学器件的方法包括：第一步骤，形成光学器件形成体，该光学器件形成体包括通过沟槽在衬底表面上沿排列方向布置的多个柱状结构，以及轮廓结构，其连接到并包含多个的柱状结构; 从光学装置形成体开始氧化到柱状结构被氧化的状态的氧化光学元件形成体的第二工序; 以及第三步骤，其中第二步骤中的轮廓结构的未氧化残余部分在第二步骤之后被氧化以形成氧化体。此外，第三步骤包括在第三步骤中限制轮廓结构相对于至少柱状结构的排列方向变形。

23. 发明申请

US20080153216A1 Method for manufacturing silicon carbide semiconductor device 有权
标题翻译：碳化硅半导体器件的制造方法
公开(公告)号：US20080153216A1
公开(公告)日：2008-06-26
申请号：US12071186
申请日：2008-02-19
申请人： Rajesh Kumar , Tsuyoshi Yamamoto , Hiroki Nakamura , Toshiyuki Morishita , Takasumi Ohyanagi , Atsuo Watanabe
发明人： Rajesh Kumar , Tsuyoshi Yamamoto , Hiroki Nakamura , Toshiyuki Morishita , Takasumi Ohyanagi , Atsuo Watanabe
IPC分类号： H01L21/82
CPC分类号： H01L29/1608 , H01L27/098 , H01L29/0619 , H01L29/66068 , H01L29/8083
摘要： A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.
摘要翻译：碳化硅半导体器件的制造方法包括以下步骤：制备包括碳化硅衬底，漂移层和第一半导体层的半导体衬底; 在单元部分中形成多个第一沟槽; 通过外延生长法在每个第一沟槽的内壁上形成栅极层; 在所述半导体衬底的表面上形成第一绝缘膜; 在所述第一绝缘膜上形成用于电连接到所述栅极层的栅电极; 在所述第一绝缘膜上形成用于连接到所述单元部分中的所述第一半导体层的源电极; 以及电连接到所述碳化硅衬底的漏电极。

24. 发明申请

US20070241338A1 SIC semiconductor device and method for manufacturing the same 有权
标题翻译： SIC半导体器件及其制造方法
公开(公告)号：US20070241338A1
公开(公告)日：2007-10-18
申请号：US11783611
申请日：2007-04-10
申请人： Tsuyoshi Yamamoto , Toshio Sakakibara , Hiroki Nakamura , Toshiyuki Morishita , Takasumi Ooyanagi , Atsuo Watanabe
发明人： Tsuyoshi Yamamoto , Toshio Sakakibara , Hiroki Nakamura , Toshiyuki Morishita , Takasumi Ooyanagi , Atsuo Watanabe
IPC分类号： H01L31/0312
CPC分类号： H01L29/1608 , H01L29/0843 , H01L29/1066 , H01L29/8083 , H01L29/872
摘要： A SiC semiconductor device includes: a SiC substrate having a drain layer, a drift layer and a source layer stacked in this order; multiple trenches penetrating the source layer and reaching the drift layer; a gate layer on a sidewall of each trench; an insulation film on the sidewall of each trench covering the gate layer; a source electrode on the source layer; and a diode portion in or under the trench contacting the drift layer to provide a diode. The drift layer between the gate layer on the sidewalls of adjacent two trenches provides a channel region. The diode portion is coupled with the source electrode, and insulated from the gate layer with the insulation film.
摘要翻译： SiC半导体器件包括：具有漏极层，漂移层和源极层的SiC衬底; 多个沟槽穿透源层并到达漂移层; 每个沟槽的侧壁上的栅极层; 覆盖所述栅极层的每个沟槽的侧壁上的绝缘膜; 源极上的源电极; 以及与沟槽接触的沟槽中或下方的二极管部分，以提供二极管。相邻两个沟槽的侧壁上的栅极层之间的漂移层提供沟道区域。二极管部分与源电极耦合，并与绝缘膜与栅极层绝缘。

25. 发明申请

US20070221924A1 Semiconductor devices 有权
标题翻译：半导体器件
公开(公告)号：US20070221924A1
公开(公告)日：2007-09-27
申请号：US11802810
申请日：2007-05-25
申请人： Takasumi Ohyanagi , Atsuo Watanabe , Rajesh Malhan , Tsuyoshi Yamamoto , Toshiyuki Morishita
发明人： Takasumi Ohyanagi , Atsuo Watanabe , Rajesh Malhan , Tsuyoshi Yamamoto , Toshiyuki Morishita
IPC分类号： H01L29/772
CPC分类号： H01L29/66416 , H01L29/1608 , H01L29/7722 , H01L29/8083
摘要： A silicon carbide semiconductor device such as JFET, SIT and the like is provided for accomplishing a reduction in on-resistance and high-speed switching operations. In the JFET or SIT which turns on/off a current with a depletion layer extending in a channel between a gate region formed along trench grooves, a gate contact layer and a gate electrode, which can be supplied with voltages from the outside, are formed on one surface of a semiconductor substrate or on the bottom of the trench groove. A metal conductor (virtual gate electrode) is formed in ohmic contact with a p++ contact layer of the gate region on the bottom of the trench grooves independently of the gate electrode. The virtual gate electrode is electrically isolated from the gate electrode and an external wire.
摘要翻译：提供诸如JFET，SIT等的碳化硅半导体器件用于实现导通电阻和高速开关操作的降低。在JFET或SIT中，形成在沿着沟槽形成的栅极区之间的沟道中延伸的耗尽层的电流，可以从外部供应电压的栅极接触层和栅极电极在半导体衬底的一个表面上或在沟槽槽的底部。金属导体（虚拟栅电极）与沟槽沟槽底部的栅极区域的p ++接触层独立于栅电极形成欧姆接触。虚拟栅电极与栅极电极和外部电线电隔离。

26. 发明授权

US07073331B2 Steam engine 有权
标题翻译：蒸汽机
公开(公告)号：US07073331B2
公开(公告)日：2006-07-11
申请号：US11132669
申请日：2005-05-19
申请人： Shuzo Oda , Shinichi Yatsuzuka , Katsuya Komaki , Yasumasa Hagiwara , Toshiyuki Morishita
发明人： Shuzo Oda , Shinichi Yatsuzuka , Katsuya Komaki , Yasumasa Hagiwara , Toshiyuki Morishita
IPC分类号： F01B1/00
CPC分类号： F01K27/005
摘要： In a steam engine having a heating device, a cooling device, and an output device, the output device comprises a piston reciprocally moving by a self-excited fluid vibration of a working fluid in a fluid container. The piston is reciprocally moved by the output device for a certain period before starting an operation of the steam engine, so that the working fluid is moved to an inside space of the heating device. Since the working fluid is surely heated and vaporized by the heating device, the fluid vibration is stably started, and as a result, the operation of the steam engine can be smoothly started.
摘要翻译：在具有加热装置，冷却装置和输出装置的蒸汽机中，输出装置包括通过流体容器中的工作流体的自激流体振动往复运动的活塞。在开始蒸汽发动机的运转之前，活塞由输出装置往复移动一定时间，使得工作流体移动到加热装置的内部空间。由于工作流体被加热装置确实地加热和蒸发，因此能够稳定地开始流体振动，结果能够平稳地开始蒸汽发动机的运转。

27. 发明申请

US20060060884A1 Semiconductor devices 有权
标题翻译：半导体器件
公开(公告)号：US20060060884A1
公开(公告)日：2006-03-23
申请号：US11138298
申请日：2005-05-27
申请人： Takasumi Ohyanagi , Atsuo Watanabe , Rajesh Malhan , Tsuyoshi Yamamoto , Toshiyuki Morishita
发明人： Takasumi Ohyanagi , Atsuo Watanabe , Rajesh Malhan , Tsuyoshi Yamamoto , Toshiyuki Morishita
IPC分类号： H01L29/74
CPC分类号： H01L29/66416 , H01L29/1608 , H01L29/7722 , H01L29/8083
摘要： A silicon carbide semiconductor device such as JFET, SIT and the like is provided for accomplishing a reduction in on-resistance and high-speed switching operations. In the JFET or SIT which turns on/off a current with a depletion layer extending in a channel between a gate region formed along trench grooves, a gate contact layer and a gate electrode, which can be supplied with voltages from the outside, are formed on one surface of a semiconductor substrate or on the bottom of the trench groove. A metal conductor (virtual gate electrode) is formed in ohmic contact with a p++ contact layer of the gate region on the bottom of the trench grooves independently of the gate electrode. The virtual gate electrode is electrically isolated from the gate electrode and an external wire.
摘要翻译：提供诸如JFET，SIT等的碳化硅半导体器件用于实现导通电阻和高速开关操作的降低。在JFET或SIT中，形成在沿着沟槽形成的栅极区之间的沟道中延伸的耗尽层的电流，可以从外部供应电压的栅极接触层和栅极电极在半导体衬底的一个表面上或在沟槽槽的底部。金属导体（虚拟栅电极）与沟槽沟槽底部的栅极区域的p ++接触层独立于栅电极形成欧姆接触。虚拟栅电极与栅极电极和外部电线电隔离。

28. 发明申请

US20050257526A1 Steam engine 有权
标题翻译：蒸汽机
公开(公告)号：US20050257526A1
公开(公告)日：2005-11-24
申请号：US11132669
申请日：2005-05-19
申请人： Shuzo Oda , Shinichi Yatsuzuka , Katsuya Komaki , Yasumasa Hagiwara , Toshiyuki Morishita
发明人： Shuzo Oda , Shinichi Yatsuzuka , Katsuya Komaki , Yasumasa Hagiwara , Toshiyuki Morishita
IPC分类号： F01B29/12 , F01K1/00 , F01K25/02 , F01K27/00 , F02C1/04 , F02G1/00
CPC分类号： F01K27/005
摘要： In a steam engine having a heating device, a cooling device, and an output device, the output device comprises a piston reciprocally moving by a self-excited fluid vibration of a working fluid in a fluid container. The piston is reciprocally moved by the output device for a certain period before starting an operation of the steam engine, so that the working fluid is moved to an inside space of the heating device. Since the working fluid is surely heated and vaporized by the heating device, the fluid vibration is stably started, and as a result, the operation of the steam engine can be smoothly started.
摘要翻译：在具有加热装置，冷却装置和输出装置的蒸汽发动机中，输出装置包括通过流体容器中的工作流体的自激流体振动往复运动的活塞。在开始蒸汽发动机的运转之前，活塞由输出装置往复移动一定时间，使得工作流体移动到加热装置的内部空间。由于工作流体被加热装置确实地加热和蒸发，因此能够稳定地开始流体振动，结果能够平稳地开始蒸汽发动机的运转。

29. 发明授权

US06630389B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US06630389B2
公开(公告)日：2003-10-07
申请号：US10059030
申请日：2002-01-30
申请人： Takumi Shibata , Toshiyuki Morishita
发明人： Takumi Shibata , Toshiyuki Morishita
IPC分类号： H01L2176
CPC分类号： H01L21/3247 , H01L21/28167 , H01L21/324 , H01L29/4236 , H01L29/66348 , H01L29/7813
摘要： In a trench-gate type power MOSFET in which a gate electrode is formed on a gate oxide layer formed on a surface of a wall defining a trench, the trench is annealed by heating, for example, at the temperature between 1050° C. and 1150° C. in a hydrogen atmosphere before the gate oxide layer is formed. The crystal defects generated in a crystal adjacent to the trench are cured by the hydrogen annealing without enlarging the trench horizontal width, so that a trench having a high aspect ratio is provided while leak current at a PN junction is prevented. In addition, the breakdown voltage of the gate oxide layer is prevented from being lowered.

30. 发明授权

US5777365A Semiconductor device having a silicon-on-insulator structure 失效
标题翻译：具有绝缘体上硅结构的半导体器件
公开(公告)号：US5777365A
公开(公告)日：1998-07-07
申请号：US721626
申请日：1996-09-26
申请人： Hitoshi Yamaguchi , Toshiyuki Morishita , Hiroaki Himi
发明人： Hitoshi Yamaguchi , Toshiyuki Morishita , Hiroaki Himi
IPC分类号： H01L21/336 , H01L21/76 , H01L21/762 , H01L27/12 , H01L29/10 , H01L29/78 , H01L29/786 , H01L27/02
CPC分类号： H01L29/7824 , H01L21/76264 , H01L29/66681 , H01L21/76275 , H01L21/76286 , H01L29/78603
摘要： A semiconductor device of SOI structure exhibits a excellent heat-radiating characteristic while assuring breakdown-voltage and element-isolating performance. A buried silicon oxide film having a thickness required by the breakdown-voltage of a semiconductor element is buried between a SOI layer and a silicon substrate. A SOI layer is divided into island silicon regions by a groove for electrical-isolation use, and the groove is filled with dielectric such as an oxide film and polycrystalline silicon. In an island silicon region, a LDMOS transistor having high breakdown voltage may be formed as the semiconductor element, and potential distribution is created in accordance with a voltage application to the semiconductor element. The buried silicon oxide film at a region where low electric potential is distributed, for example a region below a grounded well region of the LDMOS transistor, is made thin. Through the thin portion of the buried silicon oxide film, heat generated by the operation of the semiconductor element can easily be propagated to the silicon substrate and radiated.
摘要翻译： SOI结构的半导体器件在确保击穿电压和元件隔离性能的同时表现出优异的散热特性。具有半导体元件的击穿电压所需的厚度的掩埋氧化硅膜被掩埋在SOI层和硅衬底之间。 SOI层通过用于电绝缘的沟槽被划分为岛状硅区域，并且沟槽填充有诸如氧化物膜和多晶硅的电介质。在岛状硅区域中，可以形成具有高击穿电压的LDMOS晶体管作为半导体元件，并且根据对半导体元件的施加电压产生电位分布。在低电位分布的区域（例如LDMOS晶体管的接地阱区域下方的区域）中的掩埋氧化硅膜变薄。通过掩埋氧化硅膜的薄壁部分，可以容易地将由半导体元件的工作产生的热量传播到硅衬底并辐射。

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