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21. 发明专利

DE102006035661A1 未知
公开(公告)号：DE102006035661A1
公开(公告)日：2007-03-22
申请号：DE102006035661
申请日：2006-07-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： FURUKAWA TAISUKE , KOBAYASHI HIROSHI , TAKENAGA TAKASHI , KUROIWA TAKEHARU , BEYSEN SADEH , TAKI MASAKAZU
IPC分类号： G01R33/09 , G11B5/00 , H01L43/08

22. 发明专利

DE4304679A1 未知
公开(公告)号：DE4304679A1
公开(公告)日：1993-09-23
申请号：DE4304679
申请日：1993-02-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： UCHIKAWA FUSAOKI , MATSUNO SHIGERU , KINOUCHI SHIN-ICHI , HONDA TOSHIHISA , KUROIWA TAKEHARU , WATARAI HISAO , HIGAKI TAKASHI
IPC分类号： C23C16/40 , C23C16/448

23. 发明专利

JP2014027028A SiC EPITAXIAL SUBSTRATE MANUFACTURING DEVICE, METHOD FOR MANUFACTURING SiC EPITAXIAL SUBSTRATE, AND SiC EPITAXIAL SUBSTRATE 审中-公开
标题翻译： SiC外延基板制造装置，制造SiC外延基板的方法和SiC外延基板
公开(公告)号：JP2014027028A
公开(公告)日：2014-02-06
申请号：JP2012164251
申请日：2012-07-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TANAKA TAKANORI , KAWABATA NAOYUKI , MITANI YOICHIRO , TOMITA NOBUYUKI , KUROIWA TAKEHARU
IPC分类号： H01L21/205 , C23C16/42 , C30B25/20 , C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide: a SiC epitaxial substrate manufacturing device, capable of reducing the transmission of basal plane dislocations to an epitaxial layer without deteriorating productivity; a method for manufacturing a SiC epitaxial substrate; and a SiC epitaxial substrate.SOLUTION: A SiC epitaxial substrate manufacturing device 1 of the present invention forms an epitaxial layer on a SiC substrate 14. The SiC epitaxial substrate manufacturing device 1 includes a plurality of temperature ranges, and a moving mechanism for moving the entire of the SiC substrate 14 between the temperature ranges.
摘要翻译：要解决的问题：提供：SiC外延基板制造装置，其能够在不降低生产率的情况下减少基面位错到外延层的透射; 制造SiC外延基板的方法; 和SiC外延基板。本发明的SiC外延基板制造装置1在SiC基板14上形成外延层.SiC外延基板制造装置1包括多个温度范围，以及移动机构整个SiC衬底14在温度范围之间。

24. 发明专利

JP2011054698A Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2011054698A
公开(公告)日：2011-03-17
申请号：JP2009201246
申请日：2009-09-01
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TARUYA MASAYOSHI , KUROIWA TAKEHARU , MAEDA AKIRA , YAMADA AKIRA
IPC分类号： H01L21/28
摘要： PROBLEM TO BE SOLVED: To provide a silicon carbide (SiC) semiconductor device with a back electrode that can obtain excellent ohmic characteristics with an SiC substrate and is superior in adhesion and durability.
SOLUTION: The SiC semiconductor substrate has the back electrode 11 including a nickel film 3 formed on a reverse surface of the SiC substrate 1, and a barrier film 2 interposed between the SiC substrate 1 and the nickel film 3 and having an opening part 2a. A reaction layer 4 of nickel silicide is formed between the SiC substrate 1 and the nickel film 3 at the opening part 2a of the barrier film 2.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有可以用SiC衬底获得优异的欧姆特性的背面电极的碳化硅（SiC）半导体器件，并且具有优异的粘合性和耐久性。解决方案：SiC半导体衬底具有包括形成在SiC衬底1的反面上的镍膜3的背面电极11和介于SiC衬底1和镍膜3之间的阻挡膜2，并且具有开口第2a部分。在阻挡膜2的开口部分2a处，在SiC衬底1和镍膜3之间形成硅化镍反应层4.版权所有（C）2011，JPO＆INPIT

25. 发明专利

JP2009192609A Polarization control element 审中-公开
标题翻译：极化控制元件
公开(公告)号：JP2009192609A
公开(公告)日：2009-08-27
申请号：JP2008030448
申请日：2008-02-12
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： AKIYAMA KOICHI , ABE YUJI , KUROIWA TAKEHARU
IPC分类号： G02B5/30 , G02F1/03
摘要： PROBLEM TO BE SOLVED: To provide a small polarization (polarized light) control element for generating large phase change such as 90° or 180°.
SOLUTION: First and second slits 14, 15 crossing each other are provided to a metal layer 2 on a substrate 1. The first and second slits 14, 15 are each formed at a period of a wavelength or less and a dielectric 3 is embedded in the second slit 15. As a result, the phase difference according to the refractive index of the dielectric 3 is generated between the polarization component passing through the first slit 14 and the polarization component passing through the second slit 15.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供用于产生大相变（例如90°或180°）的小偏振（偏振光）控制元件。解决方案：将彼此交叉的第一和第二狭缝14,15提供给基板1上的金属层2.第一和第二狭缝14,15各自以波长或更小的周期形成，并且电介质3 结果，在通过第一狭缝14的偏振分量和通过第二狭缝15的偏振分量之间产生根据电介质3的折射率的相位差。版权所有（C）2009，JPO＆INPIT

26. 发明专利

JP2008170368A Magnetic field detection device, and manufacturing method thereof 有权
标题翻译：磁场检测装置及其制造方法
公开(公告)号：JP2008170368A
公开(公告)日：2008-07-24
申请号：JP2007005776
申请日：2007-01-15
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FURUKAWA TAISUKE , KUROIWA TAKEHARU , TOMOHISA SHINGO , OSANAGA TAKASHI , TAKI MASAKAZU , TAKADA YUTAKA
IPC分类号： G01R33/09
摘要： PROBLEM TO BE SOLVED: To solve the problem wherein adjustment of a resistance value of a resistance part constituting a Wheatstone bridge circuit is difficult without damaging linearity or a temperature characteristic of an output to a detected magnetic field, in a magnetic field detection device equipped with the Wheatstone bridge circuit having a plurality of resistance parts using respectively a magnetic resistance effect element as a component.
SOLUTION: This magnetic field detection device is equipped with the Wheatstone bridge circuit having the plurality of resistance parts, and at least one resistance part of the resistance parts is constituted of an element group formed by connecting a plurality of magnetic resistance effect elements in parallel.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题为了解决在构成惠斯通电桥电路的电阻部分的电阻值的调整困难而不损害对检测的磁场的输出的线性或温度特性的问题，则在磁场检测中装备有惠斯通电桥电路的装置，其具有分别使用磁阻效应元件作为部件的多个电阻部件。解决方案：该磁场检测装置配备有具有多个电阻部分的惠斯通电桥电路，电阻部分的至少一个电阻部分由通过连接多个磁阻效应元件形成的元件组构成在平行下。版权所有（C）2008，JPO＆INPIT

27. 发明专利

JP2004296858A Magnetic memory element and magnetic memory device 审中-公开
公开(公告)号：JP2004296858A
公开(公告)日：2004-10-21
申请号：JP2003088259
申请日：2003-03-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OSANAGA TAKASHI , KUROIWA TAKEHARU , KOBAYASHI HIROSHI , HAIYAMA SATOKATSU
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic memory device which exhibits at least two of the following properties at the same time: facility to reverse magnetization, improved reliability of cell selection and miniaturized cell area.
SOLUTION: A plot 35 which shows an asteroid curve with respect to a magnetic field Hx in the difficult direction of magnetization and a magnetic field Hx in the easy direction of magnetization of a memory layer of the magnetic memory device precipitously changes on reaching a certain value in the magnetic field Hx (a threshold value in the difficult direction of magnetization). When the magnetic field Hx is smaller than the threshold value in the difficult direction of magnetization, the reversed magnetic field is larger than a plot 31 showing an asteroid curve of a conventional memory layer. When it is larger than the threshold value in the difficult direction of magnetization, the reversed magnetic field is smaller than the plot 31. Consequently, incorrect reversal of magnetization of non-selected memory layer hardly occurs and reversal of magnetization of a selected memory layer becomes easy. Additionally, the aspect ratio of the memory layer can be reduced and the area of memory cells is not increased.
COPYRIGHT: (C)2005,JPO&NCIPI

28. 发明专利

JP2004274016A Magnetic storage semiconductor device 有权
公开(公告)号：JP2004274016A
公开(公告)日：2004-09-30
申请号：JP2003276931
申请日：2003-07-18
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KUROIWA TAKEHARU , OSANAGA TAKASHI , HAIYAMA SATOKATSU , TAKADA YUTAKA , KOBAYASHI HIROSHI
IPC分类号： H01L27/10 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic storage semiconductor device containing magneto resistance elements in which the performance of the magneto resistance elements is hard to be deteriorated during a manufacturing process.
SOLUTION: The magnetic storage semiconductor device is formed on a semiconductor substrate 1, and has at least one magnetoresistance-effect element 50, transistor elements 3a, 3b for controlling the magnetoresistance-effect element, metal interconnect layers 11, 34, 53, 63 for operating these elements, and interlayer isolation films for arranging the magnetoresistance-effect element, the transistor elements, and the metal interconnect layers respectively in layer forms, wherein the magnetoresistance-effect element is coated with a protective film 44 which is different from the interlayer isolation film 52.
COPYRIGHT: (C)2004,JPO&NCIPI

29. 发明专利

JP2003229544A MAGNETIC STORAGE 审中-公开
公开(公告)号：JP2003229544A
公开(公告)日：2003-08-15
申请号：JP2002026931
申请日：2002-02-04
申请人： MITSUBISHI ELECTRIC CORP , INOMATA KOICHIRO
发明人： OSANAGA TAKASHI , KUROIWA TAKEHARU , TAKADA YUTAKA , INOMATA KOICHIRO
IPC分类号： G11C11/14 , G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic storage that can achieve a sufficiently high S/N ratio, a fine cell area, and low electric power consumption. SOLUTION: The magnetic storage has two tunnel magnetoresistance effect elements 1a and 1b that are laminated each other so that activation can be detected. The respective tunnel magnetic resistance effect elements 1a and 1b have sticking layers 11a and 11b where a magnetization direction is fixed, recording layers 13a and 13b where the magnetization direction is changed by injecting an electron that is subjected to spin polarization, and tunnel insulating layers 12a and 12b that are arranged between the sticking layers 11a and 11b and the recording layers 13a and 13b. COPYRIGHT: (C)2003,JPO

30. 发明专利

JP2003229543A MAGNETIC STORAGE 审中-公开
公开(公告)号：JP2003229543A
公开(公告)日：2003-08-15
申请号：JP2002026909
申请日：2002-02-04
申请人： MITSUBISHI ELECTRIC CORP , INOMATA KOICHIRO
发明人： OSANAGA TAKASHI , KUROIWA TAKEHARU , TAKADA YUTAKA , INOMATA KOICHIRO
IPC分类号： G11C11/14 , G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic storage that can cope with both a sufficient S/N ratio and a fine cell area. SOLUTION: The magnetic storage stores data due to tunnel magnetic resistance effect, and has at least two tunnel magnetic resistance effect elements 1a and 1b that are laminated so that actuation can be detected. The respective tunnel magnetoresistance effect elements 1a and 1b are laminated, for example, by sandwiching a word line 3. COPYRIGHT: (C)2003,JPO

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