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21. 发明授权

US5940723A Heteroepitaxial growth of III-V materials 失效
标题翻译： III-V材料的异质外延生长
公开(公告)号：US5940723A
公开(公告)日：1999-08-17
申请号：US17376
申请日：1998-02-03
申请人： John Edward Cunningham , Keith Wayne Goossen
发明人： John Edward Cunningham , Keith Wayne Goossen
IPC分类号： C30B23/02 , H01L21/20 , H01L21/205
CPC分类号： C30B23/02 , C30B29/40 , H01L21/02392 , H01L21/02395 , H01L21/02543 , H01L21/02546 , H01L21/02631
摘要： The specification describes a process for growing device quality III-V heteroepitaxial layers without the use of buffer layers, i.e. largely defect free layers with thicknesses greater than 50 Angstroms directly on the III-V substrate. These high quality heteroepitaxial layers are grown by low temperature MBE.
摘要翻译：本说明书描述了不使用缓冲层生长器件质量III-V异质外延层的方法，即III-V衬底上直接厚度大于50埃的大部分无缺陷层。这些高质量异质外延层通过低温MBE生长。

22. 发明授权

US5838484A Micromechanical optical modulator with linear operating characteristic 失效
标题翻译：具有线性工作特性的微机械光学调制器
公开(公告)号：US5838484A
公开(公告)日：1998-11-17
申请号：US699374
申请日：1996-08-19
申请人： Keith Wayne Goossen
发明人： Keith Wayne Goossen
IPC分类号： G02B26/00 , G02B26/08 , G02F1/09
CPC分类号： G02B26/001 , G02B26/0825
摘要： A micromechanical optical modulator having a linear response in reflectivity, as a function of applied bias, and a method of operating and making same, are disclosed. The modulator consists of a movable layer suspended over a substrate. A gap is defined between the movable layer and the substrate. As the movable layer moves, the gap changes size, resulting in a change in modulator reflectivity. In operation, the movable layer moves within a linear operating regime under the action of an applied voltage, which is the sum of a constant bias and a signal from an analog source. A substantially linear operating characteristic, i.e., reflectivity versus applied voltage is obtained within the linear operating regime by properly selecting the size of the gap in the absence of the applied voltage and the range in the applied voltage.
摘要翻译：公开了具有作为施加偏压的函数的反射率线性响应的微机械光学调制器及其操作和制造方法。调制器由悬挂在基板上的可移动层组成。在可移动层和衬底之间限定间隙。随着可移动层移动，间隙改变尺寸，导致调制器反射率的变化。在操作中，可移动层在施加电压的作用下在线性操作状态下移动，施加的电压是来自模拟源的恒定偏压和信号之和。通过在没有施加的电压和施加的电压的范围的情况下适当地选择间隙的尺寸，在线性操作状态下获得基本上线性的工作特性，即反射率对施加的电压。

23. 发明授权

US5710656A Micromechanical optical modulator having a reduced-mass composite membrane 失效
标题翻译：具有缩小质量复合膜的微机械光学调制器
公开(公告)号：US5710656A
公开(公告)日：1998-01-20
申请号：US688325
申请日：1996-07-30
申请人： Keith Wayne Goossen
发明人： Keith Wayne Goossen
IPC分类号： G02B26/08 , G02B26/00
CPC分类号： G02B26/0833 , G02B26/0825
摘要： A method and apparatus for a micromechanical modulator having a reduced-mass multilayer membrane is disclosed. The modulator includes a movable composite membrane suspended over a subtrate. The composite membrane consists of an overlayer and an underlayer. The overlayer is characterized by a thickness that is less than one-quarter of a wavelength of the optical signal being modulated. Under the action of a bias voltage, the movable membrane moves from a quiescent position to a second position closer to the substrate. The modulator is fabricated so that in either the quiescent position or the second position the gap between the composite membrane and the substrate is equal to d=m.lambda./4-n.sub.s s when n.sub.u is about equal to (n.sub.s) .sup.0.5, where m is an even integer, .lambda. is the wavelength of the optical signal being modulated, n.sub.s is the refractive index of the subtrate, n.sub.u is the refractive index of the underlayer, n.sub.o is the refractive index of the overlayer, and s is the thickness of the overlayer. More generally, the gap may be given by d=m.lambda./4-n.sub.s s+(n.sub.u -n.sub.s.sup.0.5) (.lambda./10) sin (4.pi.n.sub.o s/.lambda.).
摘要翻译：公开了一种具有低质量多层膜的微机械调制器的方法和装置。该调制器包括悬浮在副滴定板上的可移动复合膜。复合膜由覆盖层和底层组成。覆盖层的特征在于小于被调制的光信号的波长的四分之一的厚度。在偏置电压的作用下，可动膜从静止位置移动到靠近基板的第二位置。制造调制器使得在静止位置或第二位置时，当nu大约等于（ns）0.5时，复合膜和衬底之间的间隙等于d =mλ/ 4-nss，其中m是即使是整数，λ是被调制的光信号的波长，n是减法器的折射率，nu是底层的折射率，不是覆盖层的折射率，s是覆盖层的厚度。更通常地，间隙可以由d =mλ/ 4-nss+（nu- 0.5）（λ/ 10）sin（4πnos/λ）给出。

24. 发明授权

US5668023A Composition for off-axis growth sites on non-polar substrates 失效
标题翻译：非极性基质上离轴生长位点的组成
公开(公告)号：US5668023A
公开(公告)日：1997-09-16
申请号：US676989
申请日：1996-07-08
申请人： Keith Wayne Goossen , James A. Walker
发明人： Keith Wayne Goossen , James A. Walker
IPC分类号： C23C14/34 , H01L21/027 , H01L21/20 , H01L21/308 , H01L21/336 , H01L21/365 , H01L29/78 , H01L21/265
CPC分类号： H01L21/3085 , H01L21/0274 , H01L21/3083 , Y10S438/933
摘要： Nonpolar substrates comprising off-axis growth regions for the growth of polar semiconductors, and a method for making such substrates, are disclosed. According to the invention, an erodible material, such as a photoresist, is applied to a substrate at a site and is exposed to radiation at that site which has an linear variation in energy at the surface of the erodible material. Due to this variation in exposure energy, a taper results in the erodible material after development. The tapered region is then etched in a manner which etches both the erodible layer and the underlying substrate. The taper in the erodible layer provides a varying attenuation during the etching process such that the taper of the erodible layer is transferred to the substrate.
摘要翻译：公开了包含用于极性半导体的生长的离轴生长区域的非极性底物及其制造方法。根据本发明，一种可蚀刻的材料，例如光致抗蚀剂，被施加到一个位置处的基底上，并且暴露在该可剥蚀材料表面处的能量线性变化的位置。由于暴露能量的这种变化，锥形导致显影后的可侵蚀材料。然后以蚀刻两个可侵蚀层和下面的衬底的方式蚀刻该锥形区域。可侵蚀层中的锥度在蚀刻工艺期间提供变化的衰减，使得可侵蚀层的锥度被转移到衬底。

25. 发明授权

US06172417B2 Integrated semiconductor devices 失效
标题翻译：集成半导体器件
公开(公告)号：US06172417B2
公开(公告)日：2001-01-09
申请号：US08535677
申请日：1995-09-27
申请人： Keith Wayne Goossen
发明人： Keith Wayne Goossen
IPC分类号： H01L2334
CPC分类号： H01L31/125 , H01L25/167 , H01L2221/68359 , H01L2221/68363 , H01L2924/0002 , Y10S438/933 , Y10S438/977 , H01L2924/00
摘要： An integrated semiconductor device is formed by bonding the conductors of one fabricated semiconductor device having a substrate to the conductors on another fabricated semiconductor device having a substrate, flowing an etch-resist in the form of a photoresist between the devices, allowing the etch-resist to dry, and removing the substrate from one of the semiconductor devices. Preferably the etch-resist is retained to impart mechanical strength to the device. More specifically, a hybrid semiconductor device is formed by bonding the conductors of one or more GaAs/AlGaAs multiple quantum well modulators to conductors on an IC chip, flowing a photoresist between the modulators and the chip, allowing the photoresist to dry, and removing the substrate from the modulator.
摘要翻译：通过将具有衬底的一个制造的半导体器件的导体与具有衬底的另一制造的半导体器件上的导体结合来形成集成半导体器件，在器件之间流动以光致抗蚀剂形式的蚀刻抗蚀剂，允许蚀刻抗蚀剂干燥，并从一个半导体器件中去除衬底。优选地，保留抗蚀剂以赋予该装置机械强度。更具体地说，通过将一个或多个GaAs / AlGaAs多量子阱调制器的导体与IC芯片上的导体结合，形成混合半导体器件，在调制器和芯片之间流动光致抗蚀剂，使光致抗蚀剂干燥，并除去来自调制器的底物。

26. 发明授权

US5943155A Mars optical modulators 有权
标题翻译：火星光学调制器
公开(公告)号：US5943155A
公开(公告)日：1999-08-24
申请号：US133065
申请日：1998-08-12
申请人： Keith Wayne Goossen
发明人： Keith Wayne Goossen
IPC分类号： G02B26/00 , G02B26/02 , G02F1/29 , G02B26/08 , G02F1/01
CPC分类号： G02B26/001 , G02B26/02
摘要： The specification describes a double poly Mechanical Anti-Reflection Switch (MARS) device in which transition layers of SiN.sub.x are provided on either side of the air gap, and the thickness ratio of the two transition layers is adjusted to provide a tradeoff between the insertion loss of the device and the optical bandwidth.
摘要翻译：该说明书描述了一种双重多机械防反射开关（MARS）器件，其中SiNx的过渡层设置在气隙的两侧，并且调节两个过渡层的厚度比以提供插入损耗之间的折衷的设备和光学带宽。

27. 发明授权

US5825528A Phase-mismatched fabry-perot cavity micromechanical modulator 失效
标题翻译：相位不匹配的fabry-perot腔微机械调制器
公开(公告)号：US5825528A
公开(公告)日：1998-10-20
申请号：US578123
申请日：1995-12-26
申请人： Keith Wayne Goossen
发明人： Keith Wayne Goossen
IPC分类号： G02B26/00 , G02B26/08
CPC分类号： G02B26/0833 , G02B26/001
摘要： An apparatus for modulating an optical signal and a method for fabricating such an apparatus, are disclosed. The apparatus, which may be formed on a semiconductor wafer or chip, consists of a membrane that is supported over a substrate by flexible support arms. An air gap is defined between the membrane and substrate. The membrane thickness and refractive index are chosen so that the reflectivities of the membrane and substrate are not 180.degree. out of phase. Under the action of bias, the membrane moves vertically from a first position to a second position relative to the substrate, changing the air gap. The reflectivity of the modulator changes as the air gap changes. Membrane thickness and the air gap are suitably selected to achieve zero overall modulator reflectivity in one of the two membrane positions. Equations define acceptable values for the thickness of the membrane thickness and the air gap. The membrane and air gap are formed by various etching and photolithographic methods.
摘要翻译：公开了一种用于调制光信号的装置及其制造方法。可以形成在半导体晶片或芯片上的装置由通过柔性支撑臂支撑在基板上的膜构成。在膜和基底之间限定气隙。选择膜厚度和折射率，使得膜和基底的反射率不是180°异相。在偏压作用下，膜相对于基板从第一位置垂直移动到第二位置，从而改变气隙。调制器的反射率随着气隙的变化而变化。适当地选择膜厚度和气隙以在两个膜位置之一中实现零调制器反射率。等式定义了膜厚度和气隙的可接受值。膜和气隙通过各种蚀刻和光刻方法形成。

28. 发明授权

US5767997A Method and arrangement for a combined modulator/photodetector 失效
标题翻译：组合调制器/光电探测器的方法和装置
公开(公告)号：US5767997A
公开(公告)日：1998-06-16
申请号：US675980
申请日：1996-07-05
申请人： David John Bishop , Keith Wayne Goossen , James A. Walker
发明人： David John Bishop , Keith Wayne Goossen , James A. Walker
IPC分类号： H04B10/24 , H04B10/00
CPC分类号： H04B10/40
摘要： Apparatus and methods for a combined optical modulator/photodetector are disclosed. A modulator chip is attached to a photodetector chip using a non-conductive epoxy or solder. The combined modulator/photodetector can be configured in at least two ways. In one configuration, the modulator is located on the upper surface of a chip that is attached, at its lower surface, to a photodetector containing chip. In another configuration, the modulator is located on the lower surface of the modulator chip, which is again attached at its lower surface to the pbotodetector chip. By combining the modulator and photodetector in the manner described above, they can be placed in a single package, resulting in reduced packaging costs versus a separately packaged modulator and a separately packaged photodetector. Moreover, feedback from the photodetector can used to optimize the operation of micromechanical optical modulators.
摘要翻译：公开了用于组合光调制器/光电检测器的装置和方法。使用非导电环氧树脂或焊料将调制器芯片附接到光电检测器芯片。组合的调制器/光电检测器可以至少两种方式配置。在一种配置中，调制器位于芯片的上表面上，芯片的下表面附接到包含光电检测器的芯片。在另一种配置中，调制器位于调制器芯片的下表面上，该调制器芯片的下表面再次连接到波导检测器芯片。通过以上述方式组合调制器和光电检测器，它们可以放置在单个封装中，从而与单独封装的调制器和单独封装的光电检测器相比降低了封装成本。此外，来自光电检测器的反馈可用于优化微机械光学调制器的操作。

29. 发明授权

US5698452A Method of making integrated detector/photoemitter with non-imaging director 失效
标题翻译：使用非成像导演制作集成检测器/照相器的方法
公开(公告)号：US5698452A
公开(公告)日：1997-12-16
申请号：US524142
申请日：1995-08-31
申请人： Keith Wayne Goossen
发明人： Keith Wayne Goossen
IPC分类号： H01L33/00 , H01L31/00 , H04B10/10 , H04B10/158 , H01L31/18
CPC分类号： H04B10/114 , Y10S148/135
摘要： A method and apparatus are disclosed for an integrated photonic device. A transparent non-imaging optical director having a top and a bottom surface is integrated, at its bottom surface, with a photonic device. The bottom surface is approximately equal in area to the active area of the photonic device. The top surface of the director is larger than its bottom surface. The top and bottom surface are connected by a waveguiding region. The geometry and refractive index of the non-imaging optical director are controlled so that the light entering the director is preferably totally internally reflected. Substantially all optical energy of an optical signal received at the top surface of the non-imaging optical director will be directed to its bottom surface, and then to the integrated photonic device. Where the photonic device is an optical source, substantially all optical energy emitted that is received by the bottom surface is directed to the top surface.
摘要翻译：公开了一种用于集成光子器件的方法和装置。具有顶表面和底表面的透明非成像光导体在其底表面处与光子器件集成。底面大致与光子器件的有效面积相等。导演的顶面大于其底面。顶表面和底表面通过波导区域连接。控制非成像光学导向器的几何形状和折射率，使得进入导光体的光优选是完全内反射的。在非成像光导向器的顶表面处接收的光信号的基本上所有的光能将被引导到其底表面，然后被引导到集成的光子器件。当光子器件是光源时，由底表面接收的基本上所发射的所有光能被引导到顶表面。

30. 发明授权

US06996151B1 Tin oxide adhesion layer for metal-dielectric mirrors 有权
标题翻译：金属电介质镜的氧化锡粘合层
公开(公告)号：US06996151B1
公开(公告)日：2006-02-07
申请号：US09435668
申请日：1999-11-08
申请人： Keith Wayne Goossen
发明人： Keith Wayne Goossen
IPC分类号： H01S5/00
CPC分类号： H01S5/183
摘要： A mirror of known type comprises a stack of pairs of dielectric material layers of alternating high and low refractive indices and a metal layer, preferably gold, capping one end of the stack. For improvising the adherence of the metal layer to the stack, the metal is directly contiguous with a layer of tin oxide. In different mirror structures, the tin oxide can be an extra layer added between the end-most pair of layers and the metal layer; or the tin oxide layer can comprise one layer of only the end-most pair of dielectric layers in the stack; or all of the pairs of dielectric layers in the stack can comprise a layer of tin oxide as one of the pair layers.
摘要翻译：已知类型的镜子包括交替的高折射率和低折射率的一对电介质材料层和金属层，优选为金，以覆盖堆叠的一端。为了即时地将金属层粘附到堆叠体上，金属与氧化锡层直接邻接。在不同的镜面结构中，氧化锡可以是在最后一对层与金属层之间添加的多余层; 或锡氧化物层可以包括仅一层叠层中最后一对电介质层的层; 或者堆叠中的所有一对电介质层可以包括作为一对层之一的氧化锡层。

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