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21. 发明授权

US07115475B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07115475B2
公开(公告)日：2006-10-03
申请号：US11002638
申请日：2004-12-03
申请人： Masakazu Yamaguchi , Wataru Saito , Ichiro Omura , Masaru Izumisawa
发明人： Masakazu Yamaguchi , Wataru Saito , Ichiro Omura , Masaru Izumisawa
IPC分类号： H01I21/336
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/402 , H01L29/41741 , H01L29/66712 , H01L29/7802
摘要： A method of manufacturing a semiconductor device in which a trench groove is formed in a first conductivity type semiconductor layer, and a second conductivity type semiconductor layer is epitaxially grown so as to bury the trench groove. The second conductivity type semiconductor layer is then removed until a surface of the first conductivity type semiconductor layer is exposed. The first conductivity type semiconductor layer is epitaxially grown on the first conductivity type semiconductor layer and the second conductivity type semiconductor layer such that the thickness of the first conductivity type semiconductor layer increases by a length which is substantially the same as a depth of the trench groove. The first conductivity type semiconductor layer is selectively removed such that the second conductivity type semiconductor layer is exposed, and the epitaxially growing of the second conductivity type semiconductor layer is repeated through selectively removing the first conductivity type semiconductor layer.
摘要翻译：一种制造半导体器件的方法，其中在第一导电类型半导体层中形成沟槽槽，并且外延生长第二导电类型半导体层以便埋入沟槽。然后去除第二导电类型半导体层直到露出第一导电类型半导体层的表面。在第一导电类型半导体层和第二导电类型半导体层上外延生长第一导电类型半导体层，使得第一导电类型半导体层的厚度增加与沟槽的深度基本相同的长度。选择性地去除第一导电型半导体层，使得露出第二导电类型半导体层，并且通过选择性地去除第一导电类型半导体层来重复第二导电类型半导体层的外延生长。

22. 发明授权

US06921687B2 Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same 失效
公开(公告)号：US06921687B2
公开(公告)日：2005-07-26
申请号：US10962713
申请日：2004-10-13
申请人： Hidetaka Hattori , Masakazu Yamaguchi
发明人： Hidetaka Hattori , Masakazu Yamaguchi
IPC分类号： H01L29/749 , H01L21/331 , H01L29/06 , H01L29/10 , H01L29/739 , H01L29/745 , H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/0653 , H01L29/1095 , H01L29/6634 , H01L29/66348 , H01L29/7393 , H01L29/7395 , H01L29/7396 , H01L29/7397 , H01L29/7455
摘要： In a p-type base layer of a trench IGBT comprising a p-type collector layer, an n-type base layer formed on the p-type collector layer, the p-type base layer formed on the n-type base layer, and an n-type emitter layer formed on the surface of the p-type base layer, the point of the highest impurity concentration is located closer to the n-type base layer than the junction with the emitter layer. In other words, the pinch-off of the channel is generated in the position closer to the n-type base layer than to the junction between the p-type base layer and the n-type emitter layer.

23. 发明授权

US5793065A Insulated-gate thyristor 失效
公开(公告)号：US5793065A
公开(公告)日：1998-08-11
申请号：US483325
申请日：1995-06-07
申请人： Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
发明人： Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
IPC分类号： H01L29/423 , H01L29/745 , H01L29/749 , H01L29/74 , H01L31/111
CPC分类号： H01L29/7455 , H01L29/42308 , H01L29/749
摘要： Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.

24. 发明授权

US5146002A Aroyl ketone derivative, UV ray absorber comprising the same, and cosmetic composition containing the same 失效
标题翻译： AROYL KETONE衍生物，包含它们的UV RAY吸收剂和包含其的化妆品组合物
公开(公告)号：US5146002A
公开(公告)日：1992-09-08
申请号：US577567
申请日：1990-09-05
申请人： Shinji Yamada , Akira Kawamata , Genji Imokawa , Shinichi Masuda , Masakazu Yamaguchi , Koichi Niinaka , Hiroko Joukura
发明人： Shinji Yamada , Akira Kawamata , Genji Imokawa , Shinichi Masuda , Masakazu Yamaguchi , Koichi Niinaka , Hiroko Joukura
IPC分类号： C07C45/45 , C07C49/76 , C07C49/788 , C07C49/794 , C07C49/796 , C07C49/82 , C07C49/83 , C07C49/84 , C07C235/78
CPC分类号： C07C49/794 , C07C235/78 , C07C45/455 , C07C49/76 , C07C49/788 , C07C49/796 , C07C49/82 , C07C49/83 , C07C49/84
摘要： A novel aroyl ketone derivative represented by formula (I) is disclosed:Ar(COCH.sub.2 COR.sup.1).sub.n (I)wherein R.sup.1 represents a saturated or unsaturated hydrocarbon group having 1-24 carbon atoms, or a linear or branched alkoxyalkyl or alkenyloxyalkyl group having 1-24 carbon atoms, dialkylamino group having 1-24 carbon atoms, Ar represents a benzene or naphthalene ring which may be substituted with one or more hydroxyl groups, alkoxy groups having 1-24 carbon atoms, alkenyloxy groups having 1-24 carbon atoms, polyoxyleneoxy groups, or .alpha.-methylenedioxy groups, and n denotes an integer of 1-4. An UV-ray absorber and cosmetic composition comprising the aroyl ketone derivative of formula (I) are also disclosed. Aroyl ketone derivative (I) of the present invention can provide an excellent UV-ray absorbing effect and has outstanding stability against light, and the UV-ray absorber or cosmetic composition containing the aroyl ketone derivative (I) can exhibit an excellent sunscreening effect.

25. 发明授权

US07896931B2 Hair dye composition 有权
标题翻译：染发剂组成
公开(公告)号：US07896931B2
公开(公告)日：2011-03-01
申请号：US12598790
申请日：2008-06-27
申请人： Masakazu Yamaguchi , Osamu Takiguchi , Masaaki Tsukase , Yasuhiro Ishiwata
发明人： Masakazu Yamaguchi , Osamu Takiguchi , Masaaki Tsukase , Yasuhiro Ishiwata
IPC分类号： A61Q5/10
CPC分类号： A61K8/49 , A61K8/494 , A61K8/4946 , A61K2800/4322 , A61K2800/4324 , A61Q5/065 , A61Q5/10
摘要： The present invention relates to a hair dye composition containing a dissociative azo dye which has high dyeing power, is capable of imparting a vivid color to the hair firmly, has excellent fastness to light, shampooing, sweat, friction, and heat, and fades less with the passage of time because the dye is stable against an alkali agent or an oxidizing agent and does not decompose during hair dyeing; and a hair dyeing method using the hair dye composition.
摘要翻译：本发明涉及一种含有具有高染色力的离解偶氮染料的染发剂组合物，能够使头发牢固地赋予头发鲜艳的色泽，具有优异的耐光性，洗发剂，汗液，摩擦和热量，并且减少随着时间的推移，因为染料对碱剂或氧化剂是稳定的，并且在染发期间不分解; 和使用染发组合物的染发方法。

26. 发明授权

US07651538B2 Hair dye composition 有权
标题翻译：染发剂组成
公开(公告)号：US07651538B2
公开(公告)日：2010-01-26
申请号：US11816422
申请日：2006-02-10
申请人： Masakazu Yamaguchi , Dominic Pratt , Yasuhiro Ishiwata
发明人： Masakazu Yamaguchi , Dominic Pratt , Yasuhiro Ishiwata
IPC分类号： A61Q5/10 , C07D275/02
CPC分类号： A61K8/49 , A61K8/69 , A61K2800/4322 , A61Q5/065 , C07D513/04 , C09B29/0081 , C09B29/14 , C09B29/3626
摘要： A hair dye composition containing an azo dye (1) or a salt thereof, (wherein R1 to R4 represents H, aliphatic hydrocarbon group, aryl group, halogen atom, acyl group, cyano group, acylamino group, or the like, wherein R1 and R2, and/or R3 and R4 may be coupled to form a 5- or 6-membered ring; X represents C or N, with the proviso that when X represents C, n stands for 1, and when X represents N, n stands for 0; A1, A2, A3 and A4 each represents N or represents C substituted by Y or having H, with the proviso that at least one of A1, A2, A3 and A4 is a nitrogen atom; and Y represents a substituent with the proviso that m stands for an integer from 0 to 3).
摘要翻译：含有偶氮染料（1）或其盐（其中R 1至R 4表示H，脂族烃基，芳基，卤原子，酰基，氰基，酰氨基等）的染发剂组合物，其中R1和 R 2和/或R 3和R 4可以连接形成5-或6-元环; X表示C或N，条件是当X表示C时，n表示1，当X表示N时，n表示对于0; A1，A2，A3和A4各自表示N或表示被Y取代或具有H的C，条件是A1，A2，A3和A4中的至少一个为氮原子; Y表示与条件是m代表0至3的整数）。

27. 发明授权

US07476261B2 Hair dye composition 有权
标题翻译：染发剂组成
公开(公告)号：US07476261B2
公开(公告)日：2009-01-13
申请号：US11722750
申请日：2005-12-20
申请人： Masakazu Yamaguchi , Dominic Pratt , Makiko Aimi , Yasuhiro Ishiwata
发明人： Masakazu Yamaguchi , Dominic Pratt , Makiko Aimi , Yasuhiro Ishiwata
IPC分类号： A61Q5/10 , C07D285/14
CPC分类号： A61K8/466 , A61K8/49 , A61Q5/065 , A61Q5/10
摘要： A hair dye composition containing an azo dye (1) or a salt thereof: wherein R represents a coupler moiety, R1 and R3 each independently represent —SO3M, —SO2NR4R5 or a hydrogen atom, R2, R4 and R5 each independently represent a hydrogen atom or a substituent, and M represents a hydrogen atom, metal atom or ammonium, with a proviso that R1 and R3 are not hydrogen atoms at the same time.
摘要翻译：含有偶氮染料（1）或其盐的染发剂组合物：其中R表示成色剂部分，R 1和R 3各自独立地表示-SO 3 M，-SO 2 NR 4 R 5或氢原子，R 2，R 4和R 5各自独立地表示氢原子或取代基，M表示氢原子，金属原子或铵，条件是R1和R3不同时为氢原子。

28. 发明授权

US06936893B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US06936893B2
公开(公告)日：2005-08-30
申请号：US10677260
申请日：2003-10-03
申请人： Masahiro Tanaka , Shinichi Umekawa , Tadashi Matsuda , Masakazu Yamaguchi
发明人： Masahiro Tanaka , Shinichi Umekawa , Tadashi Matsuda , Masakazu Yamaguchi
IPC分类号： H01L29/78 , H01L29/06 , H01L29/739 , H01L29/76
CPC分类号： H01L29/0696 , H01L29/0619 , H01L29/7397
摘要： The power semiconductor device includes a plurality of trenches disposed in a surface of a semiconductor active layer to reach a first base layer of a first conductivity type. The trenches are disposed at intervals to partition a main cell and a dummy cell. In the main cell, a second base layer of a second conductivity type and an emitter layer of the first conductivity type are disposed. In the dummy cell, a buffer layer of the second conductivity type is disposed. A gate electrode and gate insulating film are disposed in each trench. A partition structure is disposed in the surface of the semiconductor active layer to electrically isolate the buffer layer from the emitter electrode.
摘要翻译：功率半导体器件包括设置在半导体有源层的表面中以到达第一导电类型的第一基极层的多个沟槽。沟槽以间隔设置以分隔主电池和虚拟电池。在主电池中，设置第二导电类型的第二基极层和第一导电类型的发射极层。在虚拟电池中设置第二导电类型的缓冲层。栅极电极和栅极绝缘膜设置在每个沟槽中。在半导体有源层的表面设置分隔结构，以将缓冲层与发射极电隔离。

29. 发明授权

US06545341B2 Power transistor 有权
标题翻译：功率晶体管
公开(公告)号：US06545341B2
公开(公告)日：2003-04-08
申请号：US09817227
申请日：2001-03-27
申请人： Masakazu Yamaguchi
发明人： Masakazu Yamaguchi
IPC分类号： H01L27082
CPC分类号： H01L29/73
摘要： The present invention relates to a constitution of a bipolar type power transistor, which comprises: a base layer of a first conductivity type; a collector layer of the first conductivity type formed on one surface of the base layer of the first conductivity type; a first base layer of a second conductivity type formed selectively on the other surface of the base layer of the first conductivity type; and a second base layer of the second conductivity type selectively formed on the other surface of the first conductivity type base layer. The second conductivity type base layer is formed in a divided manner, and each of the second conductivity type base layers are separated by the first conductivity type base layer.
摘要翻译：本发明涉及双极型功率晶体管的结构，其包括：第一导电类型的基极层; 形成在第一导电类型的基底层的一个表面上的第一导电类型的集电极层; 第一导电类型的第一基底层选择性地形成在第一导电类型的基底层的另一个表面上; 以及选择性地形成在第一导电型基底层的另一个表面上的第二导电类型的第二基底层。第二导电型基层以分割的方式形成，并且每个第二导电型基底层被第一导电型基底层分开。

30. 发明授权

US6114727A Semiconductor device 失效
标题翻译：半导体电源mosfet器件带有载流子注入
公开(公告)号：US6114727A
公开(公告)日：2000-09-05
申请号：US3829
申请日：1998-01-07
申请人： Tsuneo Ogura , Masakazu Yamaguchi
发明人： Tsuneo Ogura , Masakazu Yamaguchi
IPC分类号： H01L29/78 , H01L21/331 , H01L29/06 , H01L29/739 , H01L29/80 , H01L29/94
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/66333 , H01L29/66348 , H01L29/7395
摘要： A semiconductor device comprises a high-resistance n type base layer, an n type drain layer formed on one surface of the n type base layer, p type base layers selectively formed at the other surface of the n type base layer, n type source layers selectively formed at surfaces of the p type base layers, p type injection layers selectively formed at the other surface of the n type base layer in regions different from regions where the n type source layers and p type base layers are formed, a trench selectively formed to extend from a surface of each n type source layer through the p type base layer into the n type base layer, a first gate electrode buried in the trench with an insulating film interposed, a drain electrode formed on the n type drain layer, a source electrode formed on the n type source layer, and a second gate electrode formed on the p type injection layer.
摘要翻译：半导体器件包括高电阻n型基极层，形成在n型基极层的一个表面上的n型漏极层，在n型基极层的另一个表面上选择性地形成的p型基极层，n型源极层选择性地形成在p型基底层的表面上，在与n型源极层和p型基极层不同的区域中在n型基极层的另一个表面上选择性地形成p型注入层，选择性地形成沟槽从每个n型源极层的表面穿过p型基极层延伸到n型基极层中，埋置在具有绝缘膜的沟槽中的第一栅电极，形成在n型漏极层上的漏电极，形成在n型源极层上的源电极和形成在p型注入层上的第二栅电极。

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