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1. 发明授权

US07651538B2 Hair dye composition 有权
标题翻译：染发剂组成
公开(公告)号：US07651538B2
公开(公告)日：2010-01-26
申请号：US11816422
申请日：2006-02-10
申请人： Masakazu Yamaguchi , Dominic Pratt , Yasuhiro Ishiwata
发明人： Masakazu Yamaguchi , Dominic Pratt , Yasuhiro Ishiwata
IPC分类号： A61Q5/10 , C07D275/02
CPC分类号： A61K8/49 , A61K8/69 , A61K2800/4322 , A61Q5/065 , C07D513/04 , C09B29/0081 , C09B29/14 , C09B29/3626
摘要： A hair dye composition containing an azo dye (1) or a salt thereof, (wherein R1 to R4 represents H, aliphatic hydrocarbon group, aryl group, halogen atom, acyl group, cyano group, acylamino group, or the like, wherein R1 and R2, and/or R3 and R4 may be coupled to form a 5- or 6-membered ring; X represents C or N, with the proviso that when X represents C, n stands for 1, and when X represents N, n stands for 0; A1, A2, A3 and A4 each represents N or represents C substituted by Y or having H, with the proviso that at least one of A1, A2, A3 and A4 is a nitrogen atom; and Y represents a substituent with the proviso that m stands for an integer from 0 to 3).
摘要翻译：含有偶氮染料（1）或其盐（其中R 1至R 4表示H，脂族烃基，芳基，卤原子，酰基，氰基，酰氨基等）的染发剂组合物，其中R1和 R 2和/或R 3和R 4可以连接形成5-或6-元环; X表示C或N，条件是当X表示C时，n表示1，当X表示N时，n表示对于0; A1，A2，A3和A4各自表示N或表示被Y取代或具有H的C，条件是A1，A2，A3和A4中的至少一个为氮原子; Y表示与条件是m代表0至3的整数）。

2. 发明授权

US07476261B2 Hair dye composition 有权
标题翻译：染发剂组成
公开(公告)号：US07476261B2
公开(公告)日：2009-01-13
申请号：US11722750
申请日：2005-12-20
申请人： Masakazu Yamaguchi , Dominic Pratt , Makiko Aimi , Yasuhiro Ishiwata
发明人： Masakazu Yamaguchi , Dominic Pratt , Makiko Aimi , Yasuhiro Ishiwata
IPC分类号： A61Q5/10 , C07D285/14
CPC分类号： A61K8/466 , A61K8/49 , A61Q5/065 , A61Q5/10
摘要： A hair dye composition containing an azo dye (1) or a salt thereof: wherein R represents a coupler moiety, R1 and R3 each independently represent —SO3M, —SO2NR4R5 or a hydrogen atom, R2, R4 and R5 each independently represent a hydrogen atom or a substituent, and M represents a hydrogen atom, metal atom or ammonium, with a proviso that R1 and R3 are not hydrogen atoms at the same time.
摘要翻译：含有偶氮染料（1）或其盐的染发剂组合物：其中R表示成色剂部分，R 1和R 3各自独立地表示-SO 3 M，-SO 2 NR 4 R 5或氢原子，R 2，R 4和R 5各自独立地表示氢原子或取代基，M表示氢原子，金属原子或铵，条件是R1和R3不同时为氢原子。

3. 发明申请

US20090056038A1 HAIR DYE COMPOSITION 有权
标题翻译：头发组合物
公开(公告)号：US20090056038A1
公开(公告)日：2009-03-05
申请号：US11816422
申请日：2006-02-10
申请人： Masakazu Yamaguchi , Dominic Pratt , Yasuhiro Ishiwata
发明人： Masakazu Yamaguchi , Dominic Pratt , Yasuhiro Ishiwata
IPC分类号： A61K8/49 , C09B29/00 , A61Q5/10
CPC分类号： A61K8/49 , A61K8/69 , A61K2800/4322 , A61Q5/065 , C07D513/04 , C09B29/0081 , C09B29/14 , C09B29/3626
摘要： A hair dye composition containing an azo dye (1) or a salt thereof, (wherein R1 to R4 represents H, aliphatic hydrocarbon group, aryl group, halogen atom, acyl group, cyano group, acylamino group, or the like, wherein R1 and R2, and/or R3 and R4 may be coupled to form a 5- or 6-membered ring; X represents C or N, with the proviso that when X represents C, n stands for 1, and when X represents N, n stands for 0; A1, A2, A3 and A4 each represents N or represents C substituted by Y or having H, with the proviso that at least one of A1, A2, A3 and A4 is a nitrogen atom; and Y represents a substituent with the proviso that m stands for an integer from 0 to 3).
摘要翻译：含有偶氮染料（1）或其盐（其中R 1至R 4表示H，脂族烃基，芳基，卤原子，酰基，氰基，酰氨基等）的染发剂组合物，其中R1和 R 2和/或R 3和R 4可以连接形成5-或6-元环; X表示C或N，条件是当X表示C时，n表示1，当X表示N时，n表示对于0; A1，A2，A3和A4各自表示N或表示被Y取代或具有H的C，条件是A1，A2，A3和A4中的至少一个为氮原子; Y表示与条件是m代表0至3的整数）。

4. 发明申请

US20080134448A1 Hair Dye Composition 有权
标题翻译：头发染料组成
公开(公告)号：US20080134448A1
公开(公告)日：2008-06-12
申请号：US11722750
申请日：2005-12-20
申请人： Masakazu Yamaguchi , Dominic Pratt , Makiko Aimi , Yasuhiro Ishiwata
发明人： Masakazu Yamaguchi , Dominic Pratt , Makiko Aimi , Yasuhiro Ishiwata
IPC分类号： A61K8/41 , A61Q5/10 , C07D285/14 , C07D417/00
CPC分类号： A61K8/466 , A61K8/49 , A61Q5/065 , A61Q5/10
摘要： A hair dye composition containing an azo dye (1) or a salt thereof wherein R represents a coupler moiety, R1 and R3 each independently represent —SO3M, —SO2NR4R5 or a hydrogen atom, R2, R4 and R5 each independently represent a hydrogen atom or a substituent, and M represents a hydrogen atom, metal atom or ammonium, with a proviso that R1 and R3 are not hydrogen atoms at the same time.
摘要翻译：含有偶氮染料（1）或其盐的染发剂组合物，其中R表示成色剂部分，R 1和R 3各自独立地表示-SO 3 M，-SO 2 NR 4 R 5或氢原子，R 2，R R 4和R 5各自独立地表示氢原子或取代基，M表示氢原子，金属原子或铵，条件是R 1， / SUB和R 3不同时为氢原子。

5. 发明授权

US07896931B2 Hair dye composition 有权
标题翻译：染发剂组成
公开(公告)号：US07896931B2
公开(公告)日：2011-03-01
申请号：US12598790
申请日：2008-06-27
申请人： Masakazu Yamaguchi , Osamu Takiguchi , Masaaki Tsukase , Yasuhiro Ishiwata
发明人： Masakazu Yamaguchi , Osamu Takiguchi , Masaaki Tsukase , Yasuhiro Ishiwata
IPC分类号： A61Q5/10
CPC分类号： A61K8/49 , A61K8/494 , A61K8/4946 , A61K2800/4322 , A61K2800/4324 , A61Q5/065 , A61Q5/10
摘要： The present invention relates to a hair dye composition containing a dissociative azo dye which has high dyeing power, is capable of imparting a vivid color to the hair firmly, has excellent fastness to light, shampooing, sweat, friction, and heat, and fades less with the passage of time because the dye is stable against an alkali agent or an oxidizing agent and does not decompose during hair dyeing; and a hair dyeing method using the hair dye composition.
摘要翻译：本发明涉及一种含有具有高染色力的离解偶氮染料的染发剂组合物，能够使头发牢固地赋予头发鲜艳的色泽，具有优异的耐光性，洗发剂，汗液，摩擦和热量，并且减少随着时间的推移，因为染料对碱剂或氧化剂是稳定的，并且在染发期间不分解; 和使用染发组合物的染发方法。

6. 发明申请

US20100146716A1 HAIR DYE COMPOSITION 有权
标题翻译：头发组合物
公开(公告)号：US20100146716A1
公开(公告)日：2010-06-17
申请号：US12598790
申请日：2008-06-27
申请人： Masakazu Yamaguchi , Osamu Takiguchi , Masaaki Tsukase , Yasuhiro Ishiwata
发明人： Masakazu Yamaguchi , Osamu Takiguchi , Masaaki Tsukase , Yasuhiro Ishiwata
IPC分类号： C09B29/36 , A61K8/49 , A61Q5/10
CPC分类号： A61K8/49 , A61K8/494 , A61K8/4946 , A61K2800/4322 , A61K2800/4324 , A61Q5/065 , A61Q5/10
摘要： A hair dye composition containing an azo dye represented by any one of the formulas (1) to (5): [wherein R1, R2a, and R2b each represents a hydrogen atom or a substituent, A and A′ each represents an aromatic heterocyclic residue (having a free valence at carbon atom thereof) and these groups have, in the structure thereof, none of a carboxy group, a sulfo group, and a quaternary ammonium group]; [R represents a coupler component, X1 to X4 represent atoms coupled together with the carbon atom sandwiched between X1 and X4 to form a 5-membered heteroaromatic ring, V1 and V2 each represents a substituent, and a1 and a2 each stands for from 0 to 3]; and [R3 represents a hydroxy group, an alkylsulfonylamino group, an arylsulfonylamino group, or —CH(R4)(R5) (R4 and R5 each representing a substituent having a Hammett's constant ? of 0.2 or greater and less than 1.4), W represents a S atom or N—R6 (R6 representing a substituent), X, Y and Z each represents a nitrogen atom or a carbon atom, R7 and R8 each represents a substituent, and b stands for from 0 to 2].
摘要翻译：含有式（1）〜（5）中任一项所示的偶氮染料的染发剂组合物[其中R1，R2a和R2b各自表示氢原子或取代基，A和A'各自表示芳族杂环残基（在其碳原子上具有游离价），并且这些基团在其结构中不具有羧基，磺基和季铵基]。 [R表示成色剂组分，X 1至X 4表示与夹在X 1和X 4之间的碳原子连接在一起形成5元杂芳环的原子，V1和V2各自表示取代基，a1和a2表示0〜 3]; 和[R3表示羟基，烷基磺酰基氨基，芳基磺酰基氨基或-CH（R4）（R5）（R4和R5各自表示哈米特常数ε为0.2以上且小于1.4的取代基），W表示 S原子或N-R6（R6表示取代基），X，Y和Z各自表示氮原子或碳原子，R7和R8各自表示取代基，b表示0〜2]。

7. 发明授权

US07518197B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US07518197B2
公开(公告)日：2009-04-14
申请号：US11437657
申请日：2006-05-22
申请人： Masakazu Yamaguchi
发明人： Masakazu Yamaguchi
IPC分类号： H01L27/088
CPC分类号： H01L29/0834 , H01L29/0619 , H01L29/7395 , H01L29/7397 , H01L29/8611
摘要： A power semiconductor device has a first base layer of first conductive type, a contact layer of first conductive type formed on a surface of the first base layer, a second base layer of first conductive layer which is formed on the surface of the first base layer at a side opposite to the first contact layer and has an impurity concentration higher than that of the first base layer, a second contact layer of second conductive type formed on the surface of the first base layer or the second base layer, and a junction termination region formed in vicinity of or in contact with outside in a horizontal direction of the second contact layer.
摘要翻译：功率半导体器件具有第一导电类型的第一基底层，形成在第一基底层的表面上的第一导电类型的接触层，形成在第一基底层的表面上的第一导电层的第二基底层在与第一接触层相对的一侧具有高于第一基底层的杂质浓度的第一接触层，形成在第一基底层或第二基底层的表面上的第二导电类型的第二接触层和接合终端在第二接触层的水平方向上形成在外部附近或与外部接触的区域。

8. 发明授权

US07361954B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US07361954B2
公开(公告)日：2008-04-22
申请号：US11458234
申请日：2006-07-18
申请人： Koichi Sugiyama , Masakazu Yamaguchi
发明人： Koichi Sugiyama , Masakazu Yamaguchi
IPC分类号： H01L29/76
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/66348
摘要： Disclosed is a power semiconductor device, including: a gate electrode having a cross section having a length in a vertical direction, and having a shape extending in a direction orthogonal to the cross section; a gate insulating film surrounding the gate electrode; an n-type source layer positioning to face the gate electrode via the gate insulating film; a p-type base layer adjacent to the n-type source layer and positioning to face the gate electrode via the gate insulating film; an n-type base layer adjacent to the p-type base layer and positioning to face the gate electrode via the gate insulating film without being in contact with the n-type source layer; and a main electrode being in contact with the n-type source layer and the p-type base layer with plural lateral planes extending in a direction crossing the direction in which the gate electrode is extending.
摘要翻译：公开了一种功率半导体器件，包括：栅电极，其截面具有在垂直方向上的长度，并且具有沿与横截面正交的方向延伸的形状; 围绕所述栅电极的栅极绝缘膜; 通过栅极绝缘膜定位成面对栅电极的n型源极层; 与n型源极层相邻并且经由栅极绝缘膜定位成面对栅电极的p型基极层; 与p型基底层相邻的n型基底层，并且经由栅极绝缘膜定位成面对栅电极而不与n型源极接触; 以及与n型源极层和p型基极层接触的主电极，该多个侧面沿与栅电极延伸的方向交叉的方向延伸。

9. 发明授权

US07319257B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US07319257B2
公开(公告)日：2008-01-15
申请号：US11626141
申请日：2007-01-23
申请人： Masakazu Yamaguchi , Hideaki Ninomiya , Ichiro Omura , Tomoki Inoue
发明人： Masakazu Yamaguchi , Hideaki Ninomiya , Ichiro Omura , Tomoki Inoue
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L29/0696 , H01L29/0619 , H01L29/0839 , H01L29/407 , H01L29/4236 , H01L29/66348 , H01L29/7394 , H01L29/7395 , H01L29/7397
摘要： A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base layer of the second conductivity type, and an emitter layer of the first conductivity type are disposed. In the dummy cell, a buffer layer of the second conductivity type is disposed. A gate electrode is disposed, through a gate insulating film, in a trench adjacent to the main cell. A buffer resistor having an infinitely large resistance value is inserted between the buffer layer and emitter electrode. The dummy cell is provided with an inhibiting structure to reduce carriers of the second conductivity type to flow to and accumulate in the buffer layer from the collector layer.
摘要翻译：功率半导体器件包括在距离第二导电类型的集电极层的位置处间隔设置在第一导电类型的第一基极层中的沟槽，以分隔主单元和虚设单元。在主电池中，设置第二导电类型的第二基极层和第一导电类型的发射极层。在虚拟电池中设置第二导电类型的缓冲层。栅电极通过栅极绝缘膜设置在与主电池相邻的沟槽中。具有无限大电阻值的缓冲电阻器插入在缓冲层和发射极之间。虚设电池具有抑制结构，以减少第二导电类型的载流子从集电极层流入和积聚在缓冲层中。

10. 发明申请

US20070210350A1 POWER SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR DRIVING SAME 有权
标题翻译：功率半导体器件，其制造方法及其驱动方法
公开(公告)号：US20070210350A1
公开(公告)日：2007-09-13
申请号：US11682670
申请日：2007-03-06
申请人： Ichiro Omura , Yoko Sakiyama , Hideki Nozaki , Atsushi Murakoshi , Masanobu Tsuchitani , Koichi Sugiyama , Tsuneo Ogura , Masakazu Yamaguchi , Tatsuo Naijo
发明人： Ichiro Omura , Yoko Sakiyama , Hideki Nozaki , Atsushi Murakoshi , Masanobu Tsuchitani , Koichi Sugiyama , Tsuneo Ogura , Masakazu Yamaguchi , Tatsuo Naijo
IPC分类号： H01L29/80
CPC分类号： H01L29/7397 , H01L23/4824 , H01L29/0619 , H01L29/0696 , H01L29/41775 , H01L29/4236 , H01L29/66348 , H01L2924/0002 , H01L2924/00
摘要： A power semiconductor device includes: a semiconductor layer having a trench extending along a first direction in a stripe configuration; a gate electrode buried in the trench for controlling a current flowing in the semiconductor layer; and a gate plug made of a material having higher electrical conductivity than the gate electrode, the gate plug having the stripe configuration and being connected to the gate electrode along the first direction. The semiconductor layer includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type provided partially in an upper face of the first semiconductor layer; a third semiconductor layer of the first conductivity type provided partially on the second semiconductor layer; and a fourth semiconductor layer of the second conductivity type provided on a lower face of the first semiconductor layer.
摘要翻译：功率半导体器件包括：半导体层，具有沿条形配置沿着第一方向延伸的沟槽; 掩埋在所述沟槽中的用于控制在所述半导体层中流动的电流的栅电极; 以及由具有比栅极电极更高的导电性的材料制成的栅极插塞，栅极插塞具有带状结构，并沿第一方向连接到栅电极。半导体层包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层，部分地设置在第一半导体层的上表面上; 第一导电类型的第三半导体层部分地设置在第二半导体层上; 以及设置在第一半导体层的下表面上的第二导电类型的第四半导体层。

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