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21. 发明申请

US20120282716A1 SEMICONDUCTOR MEMBER, SEMICONDUCTOR ARTICLE MANUFACTURING METHOD, AND LED ARRAY USING THE MANUFACTURING METHOD 失效
标题翻译：半导体器件，半导体器件制造方法和使用制造方法的LED阵列
公开(公告)号：US20120282716A1
公开(公告)日：2012-11-08
申请号：US13550512
申请日：2012-07-16
申请人： Takao Yonehara , Kenji Yamagata , Yoshinobu Sekiguchi , Kojiro Nishi
发明人： Takao Yonehara , Kenji Yamagata , Yoshinobu Sekiguchi , Kojiro Nishi
IPC分类号： H01L33/60
CPC分类号： H01L27/153 , B41J2/45 , H01L21/7806 , H01L21/784 , H01L33/0079 , H01L33/0095 , H01L2924/0002 , H01L2924/00
摘要： A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (1010), a compound semiconductor multilayer film (1020), an insulating film (2010), and a semiconductor substrate (2000) on a compound semiconductor substrate (1000), and having a first groove (2005) which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove (1025) which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.
摘要翻译：提供了一种新颖的半导体制品制造方法等。制造具有形成在半导体衬底上的化合物半导体多层膜的半导体产品的方法包括：制备包括蚀刻牺牲层（1010），化合物半导体多层膜（1020），绝缘膜（2010）和半导体衬底（2000），并且具有通过半导体衬底和绝缘膜的第一沟槽（2005）以及设置在该化合物半导体衬底（1000）中的第二沟槽的半导体衬底沟槽（1025）半导体多层膜，以便连接到第一沟槽，并使蚀刻剂通过第一沟槽和第二沟槽与蚀刻牺牲层接触，然后蚀刻蚀刻牺牲层，以将化合物半导体衬底与构件分离。

22. 发明授权

US07742681B2 Scrambling content information in a first recording medium when downgrading the quality of content information for storage on a second recording medium 失效
标题翻译：在降低用于存储在第二记录介质上的内容信息的质量时，在第一记录介质中加扰内容信息
公开(公告)号：US07742681B2
公开(公告)日：2010-06-22
申请号：US11124298
申请日：2005-05-09
申请人： Kenji Yamagata , Hiroshi Nakamura , Kyotaro Sato , Kenichiro Tada , Tomohiro Miura , Toshiro Tanikawa , Ken Miyagawa , Takashi Aoki , Shinya Hashimoto
发明人： Kenji Yamagata , Hiroshi Nakamura , Kyotaro Sato , Kenichiro Tada , Tomohiro Miura , Toshiro Tanikawa , Ken Miyagawa , Takashi Aoki , Shinya Hashimoto
IPC分类号： H04N5/76
CPC分类号： G11B20/0021 , G11B20/00086 , G11B20/00731 , G11B20/00753 , G11B20/00797 , G11B27/034 , G11B2220/213 , G11B2220/2516 , G11B2220/2562 , G11B2220/455 , H04N5/781 , H04N5/85 , H04N5/913 , H04N9/8227 , H04N2005/91328 , H04N2005/91364
摘要： An information record apparatus includes: a down-convert device for down-converting a first content information having a first reproduction quality (HD) into a second content information having a second reproduction quality (SD) which is lower quality than the first reproduction quality; a scramble device for generating scramble information by scrambling the first content information, on the basis of a predetermined scramble key; and a first record device for recording the second content information and the scramble information into a first record medium.
摘要翻译：信息记录装置包括：下变频装置，用于将具有第一再现质量（HD）的第一内容信息下变频为具有比第一再现质量低的质量的第二再现质量（SD）的第二内容信息; 加密装置，用于根据预定的加扰密钥，通过对所述第一内容信息进行加扰来产生扰频信息; 以及用于将第二内容信息和加扰信息记录到第一记录介质中的第一记录装置。

23. 发明申请

US20100026779A1 SEMICONDUCTOR MEMBER, SEMICONDUCTOR ARTICLE MANUFACTURING METHOD, AND LED ARRAY USING THE MANUFACTURING METHOD 有权
标题翻译：半导体器件，半导体器件制造方法和使用制造方法的LED阵列
公开(公告)号：US20100026779A1
公开(公告)日：2010-02-04
申请号：US12442902
申请日：2007-10-25
申请人： Takao Yonehara , Kenji Yamagata , Yoshinobu Sekiguchi , Kojiro Nishi
发明人： Takao Yonehara , Kenji Yamagata , Yoshinobu Sekiguchi , Kojiro Nishi
IPC分类号： B41J2/45 , H01L21/18 , H01L29/06 , H01L21/306 , H01L33/00 , H01L21/762
CPC分类号： H01L27/153 , B41J2/45 , H01L21/7806 , H01L21/784 , H01L33/0079 , H01L33/0095 , H01L2924/0002 , H01L2924/00
摘要： A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (1010), a compound semiconductor multilayer film (1020), an insulating film (2010), and a semiconductor substrate (2000) on a compound semiconductor substrate (1000), and having a first groove (2005) which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove (1025) which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.
摘要翻译：提供了一种新颖的半导体制品制造方法等。制造具有形成在半导体衬底上的化合物半导体多层膜的半导体产品的方法包括：制备包括蚀刻牺牲层（1010），化合物半导体多层膜（1020），绝缘膜（2010）和半导体衬底（2000），并且具有通过半导体衬底和绝缘膜的第一沟槽（2005）以及设置在该化合物半导体衬底（1000）中的第二沟槽的半导体衬底沟槽（1025）半导体多层膜，以便连接到第一沟槽，并使蚀刻剂通过第一沟槽和第二沟槽与蚀刻牺牲层接触，然后蚀刻蚀刻牺牲层，以将化合物半导体衬底与构件分离。

24. 发明授权

US07014748B2 Anodizing method, substrate processing method, and substrate manufacturing method 失效
标题翻译：阳极氧化方法，基板加工方法和基板制造方法
公开(公告)号：US07014748B2
公开(公告)日：2006-03-21
申请号：US10367841
申请日：2003-02-19
申请人： Satoshi Matsumura , Kenji Yamagata
发明人： Satoshi Matsumura , Kenji Yamagata
IPC分类号： C25D11/32
CPC分类号： H01L21/67017
摘要： This invention is to reduce the influence of a gas generated by an anodizing reaction. A silicon substrate (101) to be processed is horizontally held. A negative electrode (129) is arranged on the upper side of the silicon substrate (101), and a positive electrode (114) is brought into contact with the lower surface of the silicon substrate (101). The space between the negative electrode (129) and the silicon substrate (101) is filled with an HF solution (132). The negative electrode (129) has a number of degassing holes (130) to prevent a gas generated by the anodizing reaction from staying on the lower side of the negative electrode (129).
摘要翻译：本发明是为了减少由阳极反应产生的气体的影响。要处理的硅衬底（101）被水平保持。在硅基板（101）的上侧配置有负极（129），使正极（114）与硅基板（101）的下表面接触。负极（129）和硅衬底（101）之间的空间填充有HF溶液（132）。负极（129）具有多个脱气孔（130），以防止阳极反应产生的气体停留在负极（129）的下侧。

25. 发明申请

US20050259966A1 Information record apparatus and method, information reproduction apparatus and method, and computer program product 审中-公开
标题翻译：信息记录装置和方法，信息再现装置和方法以及计算机程序产品
公开(公告)号：US20050259966A1
公开(公告)日：2005-11-24
申请号：US11124272
申请日：2005-05-09
申请人： Kenji Yamagata , Hiroshi Nakamura , Kyotaro Sato , Kenichiro Tada , Tomohiro Miura , Toshiro Tanikawa , Ken Miyagawa , Takashi Aoki , Shinya Hashimoto
发明人： Kenji Yamagata , Hiroshi Nakamura , Kyotaro Sato , Kenichiro Tada , Tomohiro Miura , Toshiro Tanikawa , Ken Miyagawa , Takashi Aoki , Shinya Hashimoto
IPC分类号： G06F21/24 , G06F12/14 , G10L19/00 , G11B20/00 , G11B20/10 , G11B20/12 , G11B27/00 , G11B27/034 , H04N5/76 , H04N5/765 , H04N5/775 , H04N5/781 , H04N5/85 , H04N5/913 , H04N9/804 , H04N9/82
CPC分类号： G11B20/00753 , G11B20/00086 , G11B20/00195 , G11B20/00246 , G11B20/00362 , G11B20/00666 , G11B2220/216 , G11B2220/2516 , G11B2220/2562 , G11B2220/455 , H04N5/765 , H04N5/775 , H04N5/781 , H04N5/85 , H04N9/8042 , H04N9/8227 , H04N2005/91328 , H04N2005/91364
摘要： An information record apparatus includes: a down-convert device for down-converting a first content information having a first reproduction quality recorded in a first record medium into a second content information having a second reproduction quality which is lower quality than the first reproduction quality; a first record device for recording the second content information into a second record medium; a first delete device for deleting the first content information recorded in the first record medium, if the second content information is recorded in the second record medium; and a scramble device for generating scramble information by scrambling the first content information, on the basis of a predetermined scramble key.
摘要翻译：信息记录装置包括：下变频装置，用于将记录在第一记录介质中的具有第一再现质量的第一内容信息下变频为具有比第一再现质量低的质量的第二再现质量的第二内容信息; 用于将第二内容信息记录到第二记录介质中的第一记录装置; 第一删除装置，用于删除记录在第一记录介质中的第一内容信息，如果第二内容信息被记录在第二记录介质中; 以及加扰装置，用于通过根据预定的加扰密钥来加扰第一内容信息来产生加扰信息。

26. 发明授权

US06534382B1 Process for producing semiconductor article 有权
标题翻译：半导体制品的制造方法
公开(公告)号：US06534382B1
公开(公告)日：2003-03-18
申请号：US09634542
申请日：2000-08-08
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Shoji Nishida , Kenji Yamagata
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Shoji Nishida , Kenji Yamagata
IPC分类号： H01L2130
CPC分类号： H01L21/76259 , B28D5/00 , G02F1/136277 , H01L21/187 , H01L21/2007 , H01L21/304 , H01L21/76254 , H01L22/00 , H01L31/068 , H01L31/1804 , H01L31/1892 , H01L2221/68363 , H01L2221/68368 , H01L2924/0002 , Y02E10/547 , Y02P70/521 , H01L2924/00
摘要： A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.
摘要翻译：提供一种半导体制品的制造方法，其包括以下步骤：将膜粘合到具有多孔半导体层的基板上，并通过在剥离方向上对膜施加力而在多孔半导体层处将膜与基板分离。

27. 发明授权

US06428620B1 Substrate processing method and apparatus and SOI substrate 有权
标题翻译：基板加工方法及装置及SOI基板
公开(公告)号：US06428620B1
公开(公告)日：2002-08-06
申请号：US09680376
申请日：2000-10-05
申请人： Kenji Yamagata , Kiyofumi Sakaguchi
发明人： Kenji Yamagata , Kiyofumi Sakaguchi
IPC分类号： C30B2516
CPC分类号： H01L21/0203 , C25D11/32 , H01L21/2007 , H01L21/76259 , Y10S438/96 , Y10S438/977
摘要： An object of this invention is to provide a substrate processing method capable of satisfactorily performing in etching in the step of removing a porous silicon layer by etching. In order to achieve this object, a substrate processing method includes the anodizing step of forming a porous silicon layer on a major surface of a single-crystal silicon substrate, the silicon film formation step of growing a single-crystal silicon film on the porous silicon layer, the removal step of bonding a first substrate obtained by oxidizing a surface of the single-crystal silicon film to a second substrate as a supporting substrate, and removing a single-crystal silicon portion from a lower surface side of the first substrate to expose the porous silicon layer, and the etching step of etching the exposed porous silicon layer to remove the porous silicon layer on the single-crystal silicon film, wherein in washing after the anodizing step, a time in which the first substrate is removed from the electrolytic solution and exposed to the air until washing is limited to a range in which the porous silicon layer is prevented from remaining on the single-crystal silicon film in the etching step.
摘要翻译：本发明的目的是提供一种在通过蚀刻去除多孔硅层的步骤中能够令人满意地进行蚀刻的基板处理方法。为了实现该目的，基板处理方法包括在单晶硅基板的主表面上形成多孔硅层的阳极氧化步骤，在多孔硅上生长单晶硅膜的硅膜形成步骤层，将通过将单晶硅膜的表面氧化的第一基板接合到作为支撑基板的第二基板的去除步骤，以及从第一基板的下表面侧去除单晶硅部分，以暴露多孔硅层，以及蚀刻暴露的多孔硅层以去除单晶硅膜上的多孔硅层的蚀刻步骤，其中在阳极氧化步骤之后的洗涤中，将第一基底从电解液中除去的时间溶液并暴露于空气中，直到洗涤被限制在其中防止多孔硅层残留在单晶硅膜上的范围内蚀刻步骤。

28. 发明授权

US06417069B1 Substrate processing method and manufacturing method, and anodizing apparatus 有权
标题翻译：基板加工方法和制造方法以及阳极氧化装置
公开(公告)号：US06417069B1
公开(公告)日：2002-07-09
申请号：US09532071
申请日：2000-03-21
申请人： Kiyofumi Sakaguchi , Satoshi Matsumura , Kenji Yamagata
发明人： Kiyofumi Sakaguchi , Satoshi Matsumura , Kenji Yamagata
IPC分类号： H01L2176
CPC分类号： H01L21/76259
摘要： A porous layer is formed on an Si substrate using an anodizing apparatus having a conductive partition inserted between a cathode and an anode. First, the cathode and Si substrate are brought into electrical contact through a first electrolyte, and the conductive partition and Si substrate are brought into electrical contact through a second electrolyte. A current is flowed between the cathode and the anode to form a porous layer on the Si substrate. As the first electrolyte, an electrolyte capable of forming a porous structure on the Si substrate is used. As the second electrolyte, an electrolyte substantially incapable of forming a porous structure on the conductive partition is used.
摘要翻译：使用具有插入在阴极和阳极之间的导电隔板的阳极氧化装置在Si衬底上形成多孔层。首先，阴极和Si衬底通过第一电解质进行电接触，并且导电隔板和Si衬底通过第二电解质进行电接触。电流在阴极和阳极之间流动以在Si衬底上形成多孔层。作为第一电解质，使用能够在Si衬底上形成多孔结构的电解质。作为第二电解质，使用基本上不能在导电隔板上形成多孔结构的电解质。

29. 发明授权

US06410436B2 Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate 有权
标题翻译：多孔体的清洗方法，多孔体的制造方法，无孔膜或接合基材
公开(公告)号：US06410436B2
公开(公告)日：2002-06-25
申请号：US09526541
申请日：2000-03-16
申请人： Kenji Yamagata , Satoshi Matsumura
发明人： Kenji Yamagata , Satoshi Matsumura
IPC分类号： H01L21302
CPC分类号： H01L21/67057 , B08B3/08 , C11D7/261 , C11D7/265 , C11D11/0047 , C11D11/007 , H01L21/67051 , H01L33/346
摘要： In order to clean a porous body in a short time without causing any change in its structure, the porous body is cleaned after the anodization is completed with a cleaning solution containing at least one of an alcohol and acetic acid.
摘要翻译：为了在短时间内清洁多孔体而不引起其结构的任何变化，在用包含醇和乙酸中的至少一种的清洁溶液完成阳极氧化之后，清洁多孔体。

30. 发明授权

US06383890B2 Wafer bonding method, apparatus and vacuum chuck 有权
标题翻译：晶圆接合方法，设备和真空吸盘
公开(公告)号：US06383890B2
公开(公告)日：2002-05-07
申请号：US09211875
申请日：1998-12-15
申请人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
发明人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
IPC分类号： H01L2130
CPC分类号： H01L21/67092 , H01L21/6838
摘要： Two wafers are properly brought into contact with each other. The first wafer is supported by a wafer support table (3) having an annular peripheral portion (3d). The substrate support table (3) is in contact with only the peripheral portion (3d) of the first wafer. While the second wafer opposing the first wafer is supported, the lower surface of the second wafer is pressed near its central portion, so the first and second wafers come into contact with each other outward from the central portion. The central portion (3c) of the wafer support table (3) is not in contact with the first wafer. Even when particles adhere to the central portion, unevenness on the supported first wafer can be prevented. Therefore, no gas is left between the wafers. This invention also provides a wafer support table formed by fabricating a silicon wafer. A commercially available silicon wafer is fabricated by lithography to prepare a wafer support table (31). The wafer support table (31) has sealing portions (31a, 31b) and deflection prevention portions (31c). The wafer to be supported is chucked by reducing the pressure between the sealing portions (31a, 31b). The wafer to be supported is in contact only with the sealing portions (31a, 31b) and the deflection prevention portions (31c)
摘要翻译：两个晶片正确地相互接触。第一晶片由具有环形周边部分（3d）的晶片支撑台（3）支撑。基板支撑台（3）仅与第一晶片的周边部分（3d）接触。当与第一晶片相对的第二晶片被支撑时，第二晶片的下表面被压在其中心部分附近，因此第一和第二晶片从中心部分向外接触。晶片支撑台（3）的中心部分（3c）不与第一晶片接触。即使当颗粒粘附到中心部分时，也可以防止被支撑的第一晶片上的不均匀。因此，晶片之间没有气体留下。本发明还提供了通过制造硅晶片形成的晶片支撑台。通过光刻制造市售硅晶片以制备晶片支撑台（31）。晶片支撑台（31）具有密封部（31a，31b）和偏转防止部（31c）。通过减小密封部（31a，31b）之间的压力来夹持待支撑的晶片。待支撑的晶片仅与密封部分（31a，31b）和偏转防止部分（31c）接触，

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