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21. 发明申请

US20100144129A1 Method of manufacturing crystalline silicon 有权
标题翻译：晶体硅的制造方法
公开(公告)号：US20100144129A1
公开(公告)日：2010-06-10
申请号：US12588609
申请日：2009-10-21
申请人： Jung-hyun Lee , Dong-joon Ma
发明人： Jung-hyun Lee , Dong-joon Ma
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , C30B25/105 , C30B29/06 , H01L21/02532
摘要： Disclosed is a method of manufacturing crystalline Si by using plasma. According to the disclosed method, silicon (Si) deposition and reduction processes using plasma are cyclically performed in order to completely remove an a-Si layer so as to form crystalline Si on a substrate early in the process.
摘要翻译：公开了通过使用等离子体制造结晶Si的方法。根据所公开的方法，循环地进行使用等离子体的硅（Si）沉积和还原处理，以便完全去除a-Si层，以便在该工艺的早期在衬底上形成晶体Si。

22. 发明授权

US07170777B2 Phase change memory device and method of operating the same 有权
标题翻译：相变存储器件及其操作方法
公开(公告)号：US07170777B2
公开(公告)日：2007-01-30
申请号：US11193413
申请日：2005-08-01
申请人： Sang-jun Choi , Jung-hyun Lee , Dong-joon Ma , Wan-jun Park , Young-soo Park
发明人： Sang-jun Choi , Jung-hyun Lee , Dong-joon Ma , Wan-jun Park , Young-soo Park
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C8/08 , G11C13/0004 , G11C13/0028 , G11C13/0069 , G11C2013/008
摘要： A phase change memory device and a method of operating the same are provided. The phase change memory device may include a plurality of unit cells arranged in a matrix composed of rows and columns; a plurality of program bit lines and read bit lines arranged in rows, each of the program and read bit lines having a row selection transistor formed at one end thereof; and a plurality of program word lines and read word lines arranged in columns, each of the program and read word lines having a column selection transistor formed at one end thereof. Each of the unit cells may include a phase change resistor and an exothermal resistor used to heat the phase change resistor.
摘要翻译：提供了一种相变存储器件及其操作方法。相变存储装置可以包括以行和列为单位排列成矩阵的多个单元，排列成行的多个程序位线和读取位线，每个编程和读取位线都具有形成在其一端的行选择晶体管; 以及多个编程字线和排列成列的读字字线，每个编程和读字线都具有形成在其一端的列选择晶体管。每个单电池可以包括用于加热相变电阻器的相变电阻器和放热电阻器。

23. 发明授权

US07052583B2 Magnetron cathode and magnetron sputtering apparatus comprising the same 有权
标题翻译：磁控管阴极和包含该磁控溅射装置的磁控溅射装置
公开(公告)号：US07052583B2
公开(公告)日：2006-05-30
申请号：US10755452
申请日：2004-01-13
申请人： Sergiy Yakovlevich Navala , Yuri Nikolaevich Tolmachev , Dong-joon Ma , Tae-wan Kim
发明人： Sergiy Yakovlevich Navala , Yuri Nikolaevich Tolmachev , Dong-joon Ma , Tae-wan Kim
IPC分类号： C23C14/00
CPC分类号： C23C14/35 , H01J37/3408
摘要： A magnetron cathode and a sputtering apparatus including the same are provided. The magnetron cathode includes three or more magnet units, each of which comprises a single magnet or a plurality of magnets having the same poles facing toward the same direction, wherein one magnet unit is disposed around the outer circumference of another magnet unit and adjacent magnet units have opposite poles facing toward the same direction. Uniform magnetic field distribution is obtained. Therefore, the erosion profile of a target is wide and uniform.
摘要翻译：提供了一种磁控管阴极和包括该磁控管阴极的溅射装置。磁控管阴极包括三个或更多个磁体单元，每个磁体单元包括单个磁体或具有朝向相同方向的相同磁极的多个磁体，其中一个磁体单元围绕另一个磁体单元的外圆周设置，并且相邻的磁体单元具有朝向相同方向的相对极。获得均匀的磁场分布。因此，目标的侵蚀特征是宽而均匀的。

24. 发明申请

US20050205920A1 SONOS type memory device 失效
标题翻译： SONOS型存储设备
公开(公告)号：US20050205920A1
公开(公告)日：2005-09-22
申请号：US11070090
申请日：2005-03-03
申请人： Sang-hun Jeon , Chung-woo Kim , Dong-joon Ma , Sung-kyu Choi
发明人： Sang-hun Jeon , Chung-woo Kim , Dong-joon Ma , Sung-kyu Choi
IPC分类号： H01L21/8247 , H01L21/02 , H01L21/28 , H01L21/316 , H01L27/10 , H01L27/108 , H01L27/115 , H01L29/51 , H01L29/788 , H01L29/792 , H01L31/119
CPC分类号： H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02181 , H01L21/022 , H01L21/28282 , H01L21/31616 , H01L21/31645 , H01L28/56 , H01L29/513 , H01L29/792
摘要： A SONOS type memory includes a semiconductor substrate, first and second impurity regions in the semiconductor substrate doped with impurity ions of a predetermined conductivity, separated a predetermined distance from each other, a channel region between the first and second impurity regions, and a data storage type stack on the semiconductor substrate between the first and second impurity regions. The data storage type stack includes a tunneling oxide layer, a memory node layer for storing data, a blocking oxide layer, and an electrode layer, which are sequentially formed. A dielectric constant of the memory node layer is higher than dielectric constants of the tunneling and the blocking oxide layers, and a band offset of the memory node layer is lower than band offsets of the tunneling and the blocking oxide layers. The tunneling oxide layer and the blocking oxide layer are high dielectric insulating layers.
摘要翻译： SONOS型存储器包括半导体衬底，掺杂有预定电导率的杂质离子的半导体衬底中的第一和第二杂质区，彼此隔开预定距离，第一和第二杂质区之间的沟道区，以及数据存储在第一和第二杂质区之间的半导体衬底上。数据存储型堆叠包括依次形成的隧道氧化物层，用于存储数据的存储节点层，阻挡氧化物层和电极层。存储节点层的介电常数高于隧道和阻塞氧化物层的介电常数，并且存储器节点层的带偏移低于隧道和阻塞氧化物层的带偏移。隧道氧化物层和阻挡氧化物层是高介电绝缘层。

25. 发明申请

US20050093460A1 Helical resonator type plasma processing apparatus 审中-公开
标题翻译：螺旋谐振器型等离子体处理装置
公开(公告)号：US20050093460A1
公开(公告)日：2005-05-05
申请号：US10978391
申请日：2004-11-02
申请人： Dae-il Kim , Dong-joon Ma , Gook-yoon Kim , Sung-kyu Choi
发明人： Dae-il Kim , Dong-joon Ma , Gook-yoon Kim , Sung-kyu Choi
IPC分类号： H05H1/46 , H01J7/24 , H01J37/32 , H01L21/00 , H01L21/205 , H01L21/3065 , H05H1/00
CPC分类号： H01J37/32697 , H01J37/321 , H01J37/3211
摘要： Provided is helical resonator plasma processing apparatus. The plasma processing apparatus comprises a process chamber having a substrate holder for supporting a substrate, a dielectric tube disposed on the process chamber to communicate with the process chamber, a helix coil wounded around the dielectric tube, and an RF power source to supply RF power to the helix coil. The dielectric tube has a double tube shape and comprises an inner tube and an outer tube, and a plasma source gas inlet port to supply plasma source gas into a space between the inner tube and the outer tube is disposed in the outer tube. A control electrode to control plasma potential is disposed in the dielectric tube. This plasma processing apparatus provides a uniform plasma density distribution along a radial direction of a wafer, and easy control of the plasma potential in the process chamber.
摘要翻译：提供螺旋谐振器等离子体处理装置。等离子体处理装置包括具有用于支撑基板的基板保持器的处理室，设置在处理室上以与处理室连通的介电管，缠绕在介质管周围的螺旋线圈，以及RF电源，以提供RF功率到螺旋线圈。电介质管具有双管形状并且包括内管和外管，并且在外管中设置有用于将等离子体源气体供应到内管和外管之间的空间中的等离子体源气体入口。用于控制等离子体电位的控制电极设置在电介质管中。这种等离子体处理装置沿着晶片的径向方向提供均匀的等离子体密度分布，并且容易控制处理室中的等离子体电位。

26. 发明授权

US07740738B2 Inductively coupled antenna and plasma processing apparatus using the same 有权
标题翻译：电感耦合天线和使用其的等离子体处理装置
公开(公告)号：US07740738B2
公开(公告)日：2010-06-22
申请号：US10748277
申请日：2003-12-31
申请人： Tae-wan Kim , Yuri Nikolaevich Tolmachev , Dong-joon Ma
发明人： Tae-wan Kim , Yuri Nikolaevich Tolmachev , Dong-joon Ma
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321
摘要： An inductively coupled antenna for installation on a reaction chamber of an inductively coupled plasma (ICP) processing apparatus and for connection to a radio frequency (RF) power source to induce an electric field for ionizing a reactant gas injected into the reaction chamber and for generating plasma includes a coil having a plurality of turns including an outermost turn and a plurality of inner turns, wherein a current flowing through the outermost turn is larger than a current flowing through the plurality of inner turns. The outermost turn and the inner turns are connected to the RF power supply in parallel and the inner turns are connected to each other in series. The inductively coupled antenna further includes a conductive metal tube that has a cooling path and a conductive metal strip that is electrically and thermally connected to a lower portion of the metal tube.
摘要翻译：一种电感耦合天线，用于安装在电感耦合等离子体（ICP）处理装置的反应室上，并用于连接到射频（RF）电源，以诱发用于电离注入反应室的反应气体的电场并产生等离子体包括具有多个匝的线圈，其包括最外匝和多匝，其中流过最外匝的电流大于流过多个内匝的电流。最外圈和内圈与RF电源并联连接，内圈相互串联连接。电感耦合天线还包括导电金属管，该导电金属管具有电连接和热连接到金属管的下部的导电金属带。

27. 发明授权

US07404879B2 Ionized physical vapor deposition apparatus using helical self-resonant coil 有权
标题翻译：电离物理气相沉积装置采用螺旋自谐振线圈
公开(公告)号：US07404879B2
公开(公告)日：2008-07-29
申请号：US10932076
申请日：2004-09-02
申请人： Yuri Nikolaevich Tolmachev , Dong-joon Ma , Sergiy Yakovlevich Navala , Dae-il Kim
发明人： Yuri Nikolaevich Tolmachev , Dong-joon Ma , Sergiy Yakovlevich Navala , Dae-il Kim
IPC分类号： C23C14/04 , C23C14/34 , C23C14/36 , C23C14/42
CPC分类号： H01J37/321 , C23C14/358 , H01J37/3408
摘要： Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a material to be deposited on the substrate into the process chamber, facing the substrate holder, a gas injection unit to inject a process gas into the process chamber, a bias power source that applies a bias potential to the substrate holder, a helical self-resonant coil that produces plasma for ionization of the deposition material in the process chamber, one end of the helical self-resonant coil being grounded and the other end being electrically open, and an RF generator to supply an RF power to the helical self-resonant coil. The use of a helical self-resonant coil enables the IPVD apparatus to ignite and operate at very low chamber pressure such as approximately 0.1 mtorr, and to produce high density plasma with high efficiency compared to a conventional IPVD apparatus. Accordingly, a high efficiency of ionization of deposition material is achieved.
摘要翻译：提供了一种具有螺旋自谐振线圈的电离物理气相沉积（IPVD）装置。 IPVD装置包括具有支撑待处理基板的基板保持器的处理室，将要沉积在基板上的材料供给到面向基板保持器的处理室中的沉积材料源，注入单元将处理气体进入处理室，向衬底保持器施加偏置电位的偏压电源，产生用于离子化处理室中的沉积材料的等离子体的螺旋自谐振线圈，螺旋自谐振线圈的一端接地并且另一端电气打开，以及RF发生器，用于向螺旋自谐振线圈提供RF功率。螺旋自谐振线圈的使用使得IPVD装置能够在非常低的室压力（例如约0.1mtorr）下点燃和操作，并且与传统的IPVD装置相比，可以高效率地产生高密度等离子体。因此，实现了沉积材料的高效离子化。

28. 发明授权

US07210424B2 High-density plasma processing apparatus 失效
标题翻译：高密度等离子体处理装置
公开(公告)号：US07210424B2
公开(公告)日：2007-05-01
申请号：US10843430
申请日：2004-05-12
申请人： Yuri Nikolaevich Tolmachev , Sergiy Yakovlevich Navala , Dong-joon Ma , Dae-il Kim
发明人： Yuri Nikolaevich Tolmachev , Sergiy Yakovlevich Navala , Dong-joon Ma , Dae-il Kim
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32211 , H01J37/321
摘要： A high-density plasma processing apparatus includes a processing chamber, having a susceptor for supporting an object to be processed positioned therein and a dielectric window positioned on the processing chamber to form an upper surface of the processing chamber. A reaction gas injection device injects a reaction gas into an interior of the processing chamber. An inductively coupled plasma (ICP) antenna, which is installed on a center of the dielectric window, transfers radio frequency (RF) power from an RF power supply to the interior of the processing chamber. A waveguide guides a microwave generated by a microwave generator. A circular radiative tube, which is installed on the dielectric window around the ICP antenna and is connected to the waveguide, radiates a microwave toward the interior of the processing chamber via a plurality of slots formed through a bottom wall of the radiative tube.
摘要翻译：高密度等离子体处理设备包括处理室，其具有用于支撑待处理物体的基座，以及位于处理室上的介电窗口，以形成处理室的上表面。反应气体注入装置将反应气体注入到处理室的内部。安装在电介质窗口的中心的电感耦合等离子体（ICP）天线将射频（RF）功率从RF电源传送到处理室的内部。波导引导微波发生器产生的微波。安装在ICP天线周围的电介质窗口并连接到波导的圆形辐射管通过经由辐射管的底壁形成的多个狭槽向处理室的内部辐射微波。

29. 发明授权

US07053448B2 SONOS type memory device 失效
标题翻译： SONOS型存储设备
公开(公告)号：US07053448B2
公开(公告)日：2006-05-30
申请号：US11070090
申请日：2005-03-03
申请人： Sang-hun Jeon , Chung-woo Kim , Dong-joon Ma , Sung-kyu Choi
发明人： Sang-hun Jeon , Chung-woo Kim , Dong-joon Ma , Sung-kyu Choi
IPC分类号： H01L29/792
CPC分类号： H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02181 , H01L21/022 , H01L21/28282 , H01L21/31616 , H01L21/31645 , H01L28/56 , H01L29/513 , H01L29/792
摘要： A SONOS type memory includes a semiconductor substrate, first and second impurity regions in the semiconductor substrate doped with impurity ions of a predetermined conductivity, separated a predetermined distance from each other, a channel region between the first and second impurity regions, and a data storage type stack on the semiconductor substrate between the first and second impurity regions. The data storage type stack includes a tunneling oxide layer, a memory node layer for storing data, a blocking oxide layer, and an electrode layer, which are sequentially formed. A dielectric constant of the memory node layer is higher than dielectric constants of the tunneling and the blocking oxide layers, and a band offset of the memory node layer is lower than band offsets of the tunneling and the blocking oxide layers. The tunneling oxide layer and the blocking oxide layer are high dielectric insulating layers.
摘要翻译： SONOS型存储器包括半导体衬底，半导体衬底中掺杂有预定电导率的杂质离子的第一和第二杂质区，彼此隔开预定距离，第一和第二杂质区之间的沟道区，以及数据存储在第一和第二杂质区之间的半导体衬底上。数据存储型堆叠包括依次形成的隧道氧化物层，用于存储数据的存储节点层，阻挡氧化物层和电极层。存储节点层的介电常数高于隧道和阻塞氧化物层的介电常数，并且存储器节点层的带偏移低于隧道和阻塞氧化物层的带偏移。隧道氧化物层和阻挡氧化物层是高介电绝缘层。

30. 发明申请

US20050173069A1 Plasma generating apparatus and plasma processing apparatus 审中-公开
标题翻译：等离子体发生装置和等离子体处理装置
公开(公告)号：US20050173069A1
公开(公告)日：2005-08-11
申请号：US10931132
申请日：2004-09-01
申请人： Yuri Tolmachev , Dong-joon Ma , Dae-il Kim , Sergiy Navala
发明人： Yuri Tolmachev , Dong-joon Ma , Dae-il Kim , Sergiy Navala
IPC分类号： H05H1/46 , C23C16/511 , C23F1/00 , H01J37/32 , H01L21/02 , H05H1/30
CPC分类号： H01J37/32247 , H01J37/32192
摘要： Provided is a microwave plasma generating apparatus using a multiple open-ended cavity resonator, and a plasma processing apparatus including the microwave plasma generating apparatus. The plasma processing apparatus includes a container for forming a process chamber, a support unit that supports a material to be processed in the process chamber, a dielectric window formed on an upper part of the process chamber, a gas supply unit that inject a process gas into the process chamber, and a microwave supply unit that includes a plurality of resonators for supplying microwaves through the dielectric window.
摘要翻译：提供了一种使用多开口腔谐振器的微波等离子体产生装置和包括微波等离子体产生装置的等离子体处理装置。等离子体处理装置包括用于形成处理室的容器，在处理室中支撑待处理材料的支撑单元，形成在处理室的上部的电介质窗口，注入处理气体的气体供给单元以及包括用于通过电介质窗提供微波的多个谐振器的微波提供单元。

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