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1. 发明授权

US07052583B2 Magnetron cathode and magnetron sputtering apparatus comprising the same 有权
标题翻译：磁控管阴极和包含该磁控溅射装置的磁控溅射装置
公开(公告)号：US07052583B2
公开(公告)日：2006-05-30
申请号：US10755452
申请日：2004-01-13
申请人： Sergiy Yakovlevich Navala , Yuri Nikolaevich Tolmachev , Dong-joon Ma , Tae-wan Kim
发明人： Sergiy Yakovlevich Navala , Yuri Nikolaevich Tolmachev , Dong-joon Ma , Tae-wan Kim
IPC分类号： C23C14/00
CPC分类号： C23C14/35 , H01J37/3408
摘要： A magnetron cathode and a sputtering apparatus including the same are provided. The magnetron cathode includes three or more magnet units, each of which comprises a single magnet or a plurality of magnets having the same poles facing toward the same direction, wherein one magnet unit is disposed around the outer circumference of another magnet unit and adjacent magnet units have opposite poles facing toward the same direction. Uniform magnetic field distribution is obtained. Therefore, the erosion profile of a target is wide and uniform.
摘要翻译：提供了一种磁控管阴极和包括该磁控管阴极的溅射装置。磁控管阴极包括三个或更多个磁体单元，每个磁体单元包括单个磁体或具有朝向相同方向的相同磁极的多个磁体，其中一个磁体单元围绕另一个磁体单元的外圆周设置，并且相邻的磁体单元具有朝向相同方向的相对极。获得均匀的磁场分布。因此，目标的侵蚀特征是宽而均匀的。

2. 发明授权

US07740738B2 Inductively coupled antenna and plasma processing apparatus using the same 有权
标题翻译：电感耦合天线和使用其的等离子体处理装置
公开(公告)号：US07740738B2
公开(公告)日：2010-06-22
申请号：US10748277
申请日：2003-12-31
申请人： Tae-wan Kim , Yuri Nikolaevich Tolmachev , Dong-joon Ma
发明人： Tae-wan Kim , Yuri Nikolaevich Tolmachev , Dong-joon Ma
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321
摘要： An inductively coupled antenna for installation on a reaction chamber of an inductively coupled plasma (ICP) processing apparatus and for connection to a radio frequency (RF) power source to induce an electric field for ionizing a reactant gas injected into the reaction chamber and for generating plasma includes a coil having a plurality of turns including an outermost turn and a plurality of inner turns, wherein a current flowing through the outermost turn is larger than a current flowing through the plurality of inner turns. The outermost turn and the inner turns are connected to the RF power supply in parallel and the inner turns are connected to each other in series. The inductively coupled antenna further includes a conductive metal tube that has a cooling path and a conductive metal strip that is electrically and thermally connected to a lower portion of the metal tube.
摘要翻译：一种电感耦合天线，用于安装在电感耦合等离子体（ICP）处理装置的反应室上，并用于连接到射频（RF）电源，以诱发用于电离注入反应室的反应气体的电场并产生等离子体包括具有多个匝的线圈，其包括最外匝和多匝，其中流过最外匝的电流大于流过多个内匝的电流。最外圈和内圈与RF电源并联连接，内圈相互串联连接。电感耦合天线还包括导电金属管，该导电金属管具有电连接和热连接到金属管的下部的导电金属带。

3. 发明授权

US07252716B2 Gas injection apparatus for semiconductor processing system 有权
标题翻译：半导体处理系统用气体注入装置
公开(公告)号：US07252716B2
公开(公告)日：2007-08-07
申请号：US10713258
申请日：2003-11-17
申请人： Tae-wan Kim , Yuri Nikolaevich Tolmachev , Dong-joon Ma , Sergiy Yakovlevich Navala
发明人： Tae-wan Kim , Yuri Nikolaevich Tolmachev , Dong-joon Ma , Sergiy Yakovlevich Navala
IPC分类号： C23C16/00 , H01L21/306 , C23F1/00
CPC分类号： C23C16/4558
摘要： A gas injection apparatus for injecting a reactive gas into a reaction chamber of a semiconductor processing system includes an injector in contact with an inner surface of a wall of the reaction chamber. The injector has a plurality of nozzles through which the reactive gas is injected into the reaction chamber. A gas inlet penetrates the wall of the reaction chamber. A manifold is disposed between the wall of the reaction chamber and the injector, and supplies the reactive gas flowing through the gas inlet to the nozzles. Gas channels in the manifold are arranged on a plurality of levels to equalize the lengths of gas paths connecting the gas inlet to each of the plurality of nozzles. This configuration makes the flow rate of reactive gas supplied through each of the plurality of nozzles to the reaction chamber uniform.
摘要翻译：用于将反应性气体注入半导体处理系统的反应室的气体注入装置包括与反应室的壁的内表面接触的喷射器。喷射器具有多个喷嘴，反应气体通过喷嘴喷射到反应室中。气体入口穿透反应室的壁。歧管设置在反应室的壁和喷射器之间，并将流过气体入口的反应气体供应到喷嘴。歧管中的气体通道布置在多个水平面上以均衡连接到多个喷嘴中的每一个喷嘴的气体入口的气体路径的长度。这种构造使得通过多个喷嘴中的每一个喷射到反应室的反应气体的流量均匀。

4. 发明授权

US07404879B2 Ionized physical vapor deposition apparatus using helical self-resonant coil 有权
标题翻译：电离物理气相沉积装置采用螺旋自谐振线圈
公开(公告)号：US07404879B2
公开(公告)日：2008-07-29
申请号：US10932076
申请日：2004-09-02
申请人： Yuri Nikolaevich Tolmachev , Dong-joon Ma , Sergiy Yakovlevich Navala , Dae-il Kim
发明人： Yuri Nikolaevich Tolmachev , Dong-joon Ma , Sergiy Yakovlevich Navala , Dae-il Kim
IPC分类号： C23C14/04 , C23C14/34 , C23C14/36 , C23C14/42
CPC分类号： H01J37/321 , C23C14/358 , H01J37/3408
摘要： Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a material to be deposited on the substrate into the process chamber, facing the substrate holder, a gas injection unit to inject a process gas into the process chamber, a bias power source that applies a bias potential to the substrate holder, a helical self-resonant coil that produces plasma for ionization of the deposition material in the process chamber, one end of the helical self-resonant coil being grounded and the other end being electrically open, and an RF generator to supply an RF power to the helical self-resonant coil. The use of a helical self-resonant coil enables the IPVD apparatus to ignite and operate at very low chamber pressure such as approximately 0.1 mtorr, and to produce high density plasma with high efficiency compared to a conventional IPVD apparatus. Accordingly, a high efficiency of ionization of deposition material is achieved.
摘要翻译：提供了一种具有螺旋自谐振线圈的电离物理气相沉积（IPVD）装置。 IPVD装置包括具有支撑待处理基板的基板保持器的处理室，将要沉积在基板上的材料供给到面向基板保持器的处理室中的沉积材料源，注入单元将处理气体进入处理室，向衬底保持器施加偏置电位的偏压电源，产生用于离子化处理室中的沉积材料的等离子体的螺旋自谐振线圈，螺旋自谐振线圈的一端接地并且另一端电气打开，以及RF发生器，用于向螺旋自谐振线圈提供RF功率。螺旋自谐振线圈的使用使得IPVD装置能够在非常低的室压力（例如约0.1mtorr）下点燃和操作，并且与传统的IPVD装置相比，可以高效率地产生高密度等离子体。因此，实现了沉积材料的高效离子化。

5. 发明授权

US07210424B2 High-density plasma processing apparatus 失效
标题翻译：高密度等离子体处理装置
公开(公告)号：US07210424B2
公开(公告)日：2007-05-01
申请号：US10843430
申请日：2004-05-12
申请人： Yuri Nikolaevich Tolmachev , Sergiy Yakovlevich Navala , Dong-joon Ma , Dae-il Kim
发明人： Yuri Nikolaevich Tolmachev , Sergiy Yakovlevich Navala , Dong-joon Ma , Dae-il Kim
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32211 , H01J37/321
摘要： A high-density plasma processing apparatus includes a processing chamber, having a susceptor for supporting an object to be processed positioned therein and a dielectric window positioned on the processing chamber to form an upper surface of the processing chamber. A reaction gas injection device injects a reaction gas into an interior of the processing chamber. An inductively coupled plasma (ICP) antenna, which is installed on a center of the dielectric window, transfers radio frequency (RF) power from an RF power supply to the interior of the processing chamber. A waveguide guides a microwave generated by a microwave generator. A circular radiative tube, which is installed on the dielectric window around the ICP antenna and is connected to the waveguide, radiates a microwave toward the interior of the processing chamber via a plurality of slots formed through a bottom wall of the radiative tube.
摘要翻译：高密度等离子体处理设备包括处理室，其具有用于支撑待处理物体的基座，以及位于处理室上的介电窗口，以形成处理室的上表面。反应气体注入装置将反应气体注入到处理室的内部。安装在电介质窗口的中心的电感耦合等离子体（ICP）天线将射频（RF）功率从RF电源传送到处理室的内部。波导引导微波发生器产生的微波。安装在ICP天线周围的电介质窗口并连接到波导的圆形辐射管通过经由辐射管的底壁形成的多个狭槽向处理室的内部辐射微波。

6. 发明授权

US06835919B2 Inductively coupled plasma system 有权
标题翻译：电感耦合等离子体系统
公开(公告)号：US06835919B2
公开(公告)日：2004-12-28
申请号：US10259393
申请日：2002-09-30
申请人： Yuri Nikolaevich Tolmachev , Dong-joon Ma , Chang-wook Moon , Hea-young Yoon
发明人： Yuri Nikolaevich Tolmachev , Dong-joon Ma , Chang-wook Moon , Hea-young Yoon
IPC分类号： H05B102
CPC分类号： H01J37/321 , H01J37/32357
摘要： An inductively coupled plasma apparatus is provided, wherein the inductively coupled plasma apparatus includes a process chamber having a wafer susceptor on which a substrate is installed, a top plasma source chamber which is installed on the process chamber, a reactor, which is installed in the top plasma source chamber, having a channel through which a gas flows, wherein the reactor supplies plasma reaction products to the process chamber, an inductor, having two ends, is installed between the top plasma source chamber and the reactor and is wound around the reactor, an opening which is positioned within a circumferential space in which the inductor is installed between the reactor and the process chamber, and a shutter operable to open and close the opening. Thus, a uniform radial distribution of radicals emanating from a plasma source can be improved.
摘要翻译：提供一种电感耦合等离子体装置，其中感应耦合等离子体装置包括具有晶片基座的处理室，基板安装在基板上，安装在处理室上的顶部等离子体源室，安装在该处理室中的反应器顶部等离子体源室具有气体流过的通道，其中反应器向处理室供应等离子体反应产物，具有两端的电感器安装在顶部等离子体源室和反应器之间，并缠绕在反应器位于电感器安装在反应器和处理室之间的圆周空间内的开口以及可操作以打开和关闭开口的快门。因此，可以提高从等离子体源发出的自由基的均匀径向分布。

7. 发明授权

US07381292B2 Inductively coupled plasma generating apparatus incorporating serpentine coil antenna 失效
标题翻译：含有蛇形线圈天线的感应耦合等离子体发生装置
公开(公告)号：US07381292B2
公开(公告)日：2008-06-03
申请号：US10684522
申请日：2003-10-15
申请人： Young-dong Lee , Yuri Nikolaevich Tolmachev , Seong-gu Kim , Jai-kwang Shin
发明人： Young-dong Lee , Yuri Nikolaevich Tolmachev , Seong-gu Kim , Jai-kwang Shin
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/321
摘要： An inductively coupled plasma (ICP) generating apparatus includes an evacuated reaction chamber, an antenna installed at an upper portion of the reaction chamber to induce an electric field for ionizing reaction gas supplied into the reaction chamber and generating plasma, and an radio frequency (RF) power source connected to the antenna to apply radio frequency power to the antenna, wherein the antenna has a plurality of coils having different radiuses, at least one of the coils being a serpentine coil bent in a zigzag pattern. Capacitors are connected between the RF power source and a matching network and between the matching network and the antenna, in parallel with the antenna, to induce a LC resonance phenomenon. With the ICP generating apparatus having the above structure, it is possible to reduce antenna inductance, suppress capacitive coupling, and improve plasma uniformity. It is also possible to discharge and sustain plasma efficiently using the LC resonance phenomenon.
摘要翻译：电感耦合等离子体（ICP）发生装置包括抽真空反应室，安装在反应室上部的天线，以诱导供给反应室的反应气体的电离电离并产生等离子体，以及射频）电源连接到所述天线以对所述天线施加射频功率，其中所述天线具有多个具有不同半径的线圈，所述线圈中的至少一个是以锯齿形图案弯曲的蛇形线圈。电容器连接在RF电源和匹配网络之间，并且与天线并联的匹配网络和天线之间，以引起LC共振现象。利用具有上述结构的ICP发生装置，可以减少天线电感，抑制电容耦合并提高等离子体均匀性。也可以使用LC共振现象有效地放电和维持等离子体。

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