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21. 发明授权

US5177589A Refractory metal thin film having a particular step coverage factor and ratio of surface roughness 失效
$Refractory metal thin film having a particular step coverage factor and ratio of surface roughness$
标题翻译：具有特定台阶覆盖因子和表面粗糙度比的耐火金属薄膜
公开(公告)号：US5177589A
公开(公告)日：1993-01-05
申请号：US765310
申请日：1991-09-25
申请人： Nobuyoshi Kobayashi , Hidekazu Goto , Masayuki Suzuki , Yoshio Homma , Natsuki Yokoyama , Yoshitaka Nakamura
发明人： Nobuyoshi Kobayashi , Hidekazu Goto , Masayuki Suzuki , Yoshio Homma , Natsuki Yokoyama , Yoshitaka Nakamura
IPC分类号： C23C16/14 , C23C16/42 , H01L21/285 , H01L21/3205 , H01L21/768
CPC分类号： H01L21/76876 , C23C16/14 , C23C16/42 , H01L21/28512 , H01L21/28518 , H01L21/32053 , H01L21/76843 , H01L21/76877 , H01L2924/0002
摘要： In forming a metal or metal silicide film by CVD, a fluoro-silane is used as a reaction gas, or a fluoro-silane is added to a source gas. Examples of the metal halide used in the present invention include fluorides and chlorides of tungsten, molybdenum, titanium, tantalum and niobium. Among them, fluorides of tungsten and molybdenum are more desirable particularly from the viewpoint of the availability of the deposited metal or metal silicide. It is preferred that the source gases, i.e. silane series gas and metal halide, be diluted with a carrier gas such as nitrogen, hydrogen, helium or argon, and this is also true of the fluoro-silane. The total pressure is preferably 0.01 to 10 Torr. The reaction temperature is desirably 200.degree. to 800.degree. C., more desirably 300.degree. to 500.degree. C. Plasma CVD instead of thermal CVD may be employed for the purpose of lowering the reaction temperature.
摘要翻译：在通过CVD形成金属或金属硅化物膜时，使用氟硅烷作为反应气体，或者在源气体中加入氟硅烷。用于本发明的金属卤化物的实例包括钨，钼，钛，钽和铌的氟化物和氯化物。其中，特别是从沉积的金属或金属硅化物的可用性的观点出发，更优选钨和钼的氟化物。优选的原料气体，即硅烷系列气体和金属卤化物，用载气如氮气，氢气，氦气或氩气稀释，氟硅烷也是如此。总压力优选为0.01〜10托。反应温度优选为200〜800℃，更优选为300〜500℃。为了降低反应温度，可以使用等离子体CVD代替热CVD。

22. 发明授权

US5175017A Method of forming metal or metal silicide film 失效
标题翻译：形成金属或金属硅化物膜的方法
公开(公告)号：US5175017A
公开(公告)日：1992-12-29
申请号：US646423
申请日：1991-01-28
申请人： Nobuyoshi Kobayashi , Hidekazu Goto , Masayuki Suzuki , Yoshio Homma , Natsuki Yokoyama
发明人： Nobuyoshi Kobayashi , Hidekazu Goto , Masayuki Suzuki , Yoshio Homma , Natsuki Yokoyama
IPC分类号： C23C16/14 , C23C16/42 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76876 , C23C16/14 , C23C16/42 , H01L21/28512 , H01L21/28518 , H01L21/76843 , H01L21/76877
摘要： In forming a metal or metal silicide film by CVD, a fluorosilane is used as a reaction gas, or a fluoro-silane is added to a source gas. Examples of the metal halide used in the present invention include fluorides and chlorides of tungsten, molybdenum, titanium, tantalum and niobium. Among them, fluorides of tungsten and molybdenum are more desirable particularly from the viewpoint of the availability of the deposited metal or metal silicide. It is preferred that the source gases, i.e. silane series gas and metal halide, be diluted with a carrier gas such as nitrogen, hydrogen, helium or argon, and this is also true of the fluoro-silane. The total pressure is preferably 0.01 to 10 Torr. The reaction temperature is desirably 200.degree. to 800.degree. C., more desirably 300.degree. to 500.degree. C. Plasma CVD instead of thermal CVD may be employed for the purpose of lowering the reaction temperature.
摘要翻译：在通过CVD形成金属或金属硅化物膜时，使用氟代硅烷作为反应气体，或者在源气体中加入氟硅烷。用于本发明的金属卤化物的实例包括钨，钼，钛，钽和铌的氟化物和氯化物。其中，特别是从沉积的金属或金属硅化物的可用性的观点出发，更优选钨和钼的氟化物。优选的原料气体，即硅烷系列气体和金属卤化物，用载气如氮气，氢气，氦气或氩气稀释，氟硅烷也是如此。总压力优选为0.01〜10托。反应温度优选为200〜800℃，更优选为300〜500℃。为了降低反应温度，可以使用等离子体CVD代替热CVD。

23. 发明授权

US08437231B2 Servo control device and optical disc device 有权
标题翻译：伺服控制装置和光盘装置
公开(公告)号：US08437231B2
公开(公告)日：2013-05-07
申请号：US13533378
申请日：2012-06-26
申请人： Nobuyoshi Kobayashi
发明人： Nobuyoshi Kobayashi
IPC分类号： G11B7/00
CPC分类号： G11B20/10037 , G11B7/0906 , G11B20/10222 , G11B2220/2537
摘要： A servo control device includes a plurality of reproduction channels, a plurality of analog/digital (A/D) converters, a servo error detecting circuit that generates a servo error signal, a servo signal processing device that executes predetermined processing for the servo error signal to generate a control signal, and a sampling frequency converter that converts the sampling frequency between the servo error detecting circuit and the servo signal processing device. A first clock is included as a sampling clock of the A/D converters and a processing clock of the servo error detecting circuit. A second clock is included as a processing clock of the servo signal processing device. The sampling frequency converter converts the sampling frequency by processing the servo error signal by the servo error detecting circuit in synchronization with the first clock and processing the signal processed in synchronization with the first clock in synchronization with the second clock.
摘要翻译：伺服控制装置包括多个再现通道，多个模拟/数字（A / D）转换器，产生伺服误差信号的伺服误差检测电路，对伺服误差信号执行预定处理的伺服信号处理装置以产生控制信号;以及采样频率转换器，其转换伺服误差检测电路和伺服信号处理装置之间的采样频率。作为A / D转换器的采样时钟和伺服误差检测电路的处理时钟，包括第一时钟。作为伺服信号处理装置的处理时钟包括第二时钟。采样频率转换器通过与第一时钟同步地由伺服误差检测电路处理伺服误差信号来转换采样频率，并与第二时钟同步地处理与第一时钟同步处理的信号。

24. 发明申请

US20110216637A1 METHOD OF, AND APPARATUS FOR, RECORDING ADDRESS INFORMATION TO DISC MEDIUM 失效
标题翻译：用于记录DISC介质的地址信息的方法和装置
公开(公告)号：US20110216637A1
公开(公告)日：2011-09-08
申请号：US13109466
申请日：2011-05-17
申请人： Shoei KOBAYASHI , Nobuyoshi Kobayashi , Tamotsu Yamagami , Shinichiro Iimura
发明人： Shoei KOBAYASHI , Nobuyoshi Kobayashi , Tamotsu Yamagami , Shinichiro Iimura
IPC分类号： G11B7/085
CPC分类号： G11B27/24 , G11B7/0053 , G11B7/24082 , G11B20/1833 , G11B27/19
摘要： In step S1, the address generator generates address information composed of a sync signal which is recorded on an optical disc, address data and an error correction code for the address data, pre-encodes and supplies it to a modulator. At the same time, a carrier signal generator generates a carrier signal which is to carry the address information, and supplies it to the modulator. In step S2, the modulator makes MSK modulation of the carrier signal supplied from the carrier signal generator on the basis of the pre-encoded address information supplied from the address generator, and supplies a resultant MSK modulation signal to a wobbling unit. In step S3, the wobbling unit forms, on the optical disc, a spiral groove wobbled adaptively to the MSK modulation signal supplied from the modulator. In this optical disc, a given address can be accessed quickly and accurately.
摘要翻译：在步骤S1中，地址发生器产生由记录在光盘上的同步信号，地址数据和地址数据的纠错码组成的地址信息，并对其进行编码并将其提供给调制器。同时，载波信号发生器产生携带地址信息的载波信号，并将其提供给调制器。在步骤S2中，调制器根据从地址发生器提供的预先编码的地址信息，对从载波信号发生器提供的载波信号进行MSK调制，并将得到的MSK调制信号提供给摆动单元。在步骤S3中，摆动单元在光盘上形成自适应于从调制器提供的MSK调制信号摆动的螺旋槽。在该光盘中，可以快速准确地访问给定的地址。

25. 发明申请

US20100208560A1 Optical disk playback apparatus and optical disk recording/playback apparatus 失效
标题翻译：光盘播放装置和光盘记录/重放装置
公开(公告)号：US20100208560A1
公开(公告)日：2010-08-19
申请号：US12654855
申请日：2010-01-06
申请人： Nobuyoshi Kobayashi
发明人： Nobuyoshi Kobayashi
IPC分类号： G11B15/52
CPC分类号： G11B20/10009 , G11B7/1263 , G11B20/10027 , G11B20/10037 , G11B20/10046 , G11B20/10203 , G11B2220/2537
摘要： Disclosed herein is an optical disk playback apparatus including: a signal playback device configured to read and decode information recorded to an optical disk through an optical pickup unit in order to reproduce the information; the signal playback device including a signal generation circuit, a first signal processing device, a second signal processing device, a modulator, a switch, an analog to digital converter, and a third signal processing device.
摘要翻译：这里公开了一种光盘播放装置，包括：信号重放装置，被配置为通过光学拾取单元读取和解码记录到光盘的信息，以便再现信息; 信号重放装置包括信号产生电路，第一信号处理装置，第二信号处理装置，调制器，开关，模数转换器和第三信号处理装置。

26. 发明授权

US06693863B2 Asymmetry correcting circuit and information reproducing apparatus using the same 失效
标题翻译：非对称校正电路和使用该不对称校正电路的信息再现装置
公开(公告)号：US06693863B2
公开(公告)日：2004-02-17
申请号：US10122329
申请日：2002-04-16
申请人： Norio Shoji , Yuji Gendai , Kimimasa Senba , Nobuyoshi Kobayashi
发明人： Norio Shoji , Yuji Gendai , Kimimasa Senba , Nobuyoshi Kobayashi
IPC分类号： G11B700
CPC分类号： H03M1/0607 , G11B20/10027 , G11B20/10037 , G11B20/10203 , G11B20/10314 , H03M1/12
摘要： To provide an asymmetry correcting circuit capable of canceling an asymmetry simultaneously with quantization in an ADC and utilizing the dynamic range of the ADC effectively, and also to provide an information reproducing apparatus using such a correcting circuit. An asymmetry correcting circuit includes a first envelope detection circuit for detecting the envelope of a positive peak of an input signal waveform; a second envelope detection circuit for detecting the envelope of a negative peak of the input signal waveform; an adding circuit for producing a sum voltage of the positive peak voltage and the negative peak voltage; a smoothing circuit for smoothing the sum voltage; a multiplying circuit for multiplying the smoothed sum voltage by a predetermined offset adjustment coefficient; and a quantization reference voltage control circuit for DC-wise shifting, in response to the output signal of the multiplying circuit, the median of the quantization reference voltage of the ADC in conformity with the offset derived from the asymmetry of the input signal, and controlling the upper limit and the lower limit of the quantization reference voltage to the values that correspond to the offset quantity.
摘要翻译：提供一种能够在ADC中同时消除不对称性并且有效地利用ADC的动态范围的不对称校正电路，并且还提供使用这种校正电路的信息再现装置。不对称校正电路包括用于检测输入信号波形的正峰值的包络的第一包络检测电路; 第二包络检测电路，用于检测输入信号波形的负峰值的包络; 用于产生正峰值电压和负峰值电压的和电压的加法电路; 平滑电路，用于平滑和电压; 乘法电路，用于将平滑的和电压乘以预定的偏移调整系数; 以及量化参考电压控制电路，用于根据乘法电路的输出信号进行直角移位，ADC的量化参考电压的中值与从输入信号的不对称性导出的偏移一致，并控制量化参考电压的上限和下限对应于偏移量的值。

27. 发明授权

US06627497B2 Semiconductor integrated circuit device and method of manufacturing the same 失效
公开(公告)号：US06627497B2
公开(公告)日：2003-09-30
申请号：US10162192
申请日：2002-06-05
申请人： Naruhiko Nakanishi , Nobuyoshi Kobayashi , Yuzuru Ohji , Sinpei Iijima , Yasuhiro Sugawara , Misuzu Kanai
发明人： Naruhiko Nakanishi , Nobuyoshi Kobayashi , Yuzuru Ohji , Sinpei Iijima , Yasuhiro Sugawara , Misuzu Kanai
IPC分类号： H01L218242
CPC分类号： H01L21/31604 , H01L21/02183 , H01L21/02271 , H01L21/02337 , H01L27/10814 , H01L27/10852 , H01L27/10882 , H01L27/10894 , H01L28/56 , H01L28/60 , H01L28/65
摘要： A semiconductor integrated circuit device including a memory cell comprising a memory cell selecting MISFET Qs formed on the main surface of a semiconductor substrate 1 and an information storage capacitor C that is connected in series to said memory cell selecting MISFET Qs, and that have a lower electrode 54, a capacitor insulator 58 and an upper electrode 59, wherein the lower electrode 54 is made of a conductive material containing ruthenium dioxide (RuO2) as principle ingredient and the capacitor insulator 58 is made of crystalline tantalum pentoxide. Thus, the capacitance required for the memory cells of a 256 Mbits DRAM or those of a DRAM of a later generation can be secured.

28. 发明授权

US06340632B1 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06340632B1
公开(公告)日：2002-01-22
申请号：US09585629
申请日：2000-06-02
申请人： Shinichi Fukada , Kazuo Nojiri , Takashi Yunogami , Shoji Hotta , Hideo Aoki , Takayuki Oshima , Nobuyoshi Kobayashi
发明人： Shinichi Fukada , Kazuo Nojiri , Takashi Yunogami , Shoji Hotta , Hideo Aoki , Takayuki Oshima , Nobuyoshi Kobayashi
IPC分类号： H01L214763
CPC分类号： H01L21/76874 , H01L21/76804 , H01L21/76811 , H01L21/76813 , H01L21/76829 , H01L21/76843 , H01L21/76873 , H01L23/53238 , H01L2221/1036 , H01L2924/0002 , H01L2924/00
摘要： Insulating films 34 through 38 (of which insulating films 34, 36, 38 are silicon nitride films and insulating films 35, 38 are silicon oxide films) are sequentially formed on the wires 33 of the fourth wiring layer and groove pattern 40 is transferred into the insulating film 38 by means of photolithography. An anti-reflection film 41 is formed to fill the grooves 40 of the insulating film 38 and then a resist film 42 carrying a hole pattern 43 is formed. The films are subjected to an etching operation in the presence of the resist film 42 to transfer the hole pattern into the insulating films 38, 37, 36 and part of the insulating film 35. Subsequently, the resist film 42 and the anti-reflection film 41 are removed and the groove pattern 40 and the hole pattern 43 are transferred respectively into the insulating film 37 and the insulating film 35 by using the insulating film 38 as mask.
摘要翻译：绝缘膜34至38（其绝缘膜34,36,38是氮化硅膜和绝缘膜35,38是氧化硅膜）依次形成在第四布线层的布线33上，并将凹槽图案40转移到绝缘膜38。形成防反射膜41以填充绝缘膜38的槽40，然后形成承载孔图案43的抗蚀剂膜42。在存在抗蚀剂膜42的情况下对膜进行蚀刻操作，以将孔图案转印到绝缘膜38,37,36和绝缘膜35的一部分中。随后，将抗蚀剂膜42和抗反射膜 41，并且通过使用绝缘膜38作为掩模将槽图案40和孔图案43分别转印到绝缘膜37和绝缘膜35中。

29. 发明授权

US5194939A Digital video signal processing apparatus for data rate down-conversion with half-band filtering 失效
标题翻译：数字视频信号处理设备，用于带宽滤波器的数据速率下变频
公开(公告)号：US5194939A
公开(公告)日：1993-03-16
申请号：US796378
申请日：1991-11-22
申请人： Nobuyoshi Kobayashi , Hisanori Kominami
发明人： Nobuyoshi Kobayashi , Hisanori Kominami
IPC分类号： H04N5/92 , H03H17/06 , H04N5/14 , H04N9/804 , H04N9/808 , H04N19/00 , H04N19/423 , H04N19/59 , H04N19/80
CPC分类号： H03H17/06 , H04N9/8042
摘要： A digital video signal processing apparatus for reducing the data rate of, and interpolating digital, video signals of a component format. The apparatus comprises a half-band high pass filter having a coefficient profile equivalent to that obtained by setting a center coefficient of an odd-order half-band low pass filter to zero, or a notch filter having a coefficient profile equivalent to that obtained by eliminating a center coefficient and even-numbered coefficients of such a low pass filter, and a delay line for giving a predetermined delay time to the signal supplied thereto, whereby the data rate of multiplexed or time-divided signals can be reduced, or the signals interpolated, in a relatively simple design employing a single digital filter.

30. 发明授权

US5013526A Superconducting alloys comprising tungsten, molybdenum, silicon and oxygen 失效
标题翻译：包含钨，钼，硅和氧的超导合金
公开(公告)号：US5013526A
公开(公告)日：1991-05-07
申请号：US438596
申请日：1989-11-17
申请人： Nobuyoshi Kobayashi , Masayuki Suzuki , Seiichi Kondo , Makoto Matsui , Kiichiro Mukai
发明人： Nobuyoshi Kobayashi , Masayuki Suzuki , Seiichi Kondo , Makoto Matsui , Kiichiro Mukai
IPC分类号： C23C14/14 , C23C16/06 , H01L21/3205 , H01L23/52 , H01L23/532 , H01L39/06 , H01L39/12
CPC分类号： H01L23/53285 , H01L39/12 , H01L2924/0002 , Y10S420/901 , Y10T428/12528 , Y10T428/12806
摘要： A superconducting material made of tungsten or molybdenum containing a specified amount of silicon, a wiring made of this superconducting material, and a semiconductor device using this wiring.The above-mentioned superconducting material undegoes no damage even in the steps of heat treatments effected after the formation of a wiring therefrom by virtue of its high melting point, and can be very easily patterned by reactive ion etching using SF.sub.6 as an etching gas, which has heretofore been generally employed. These features, in which conventional superconducting materials are lacking, allow the superconducting material of the present invention to exhibit excellent properties particularly when used in the wirings of a semiconductor device.

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