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21. 发明申请

US20120305949A1 Light Emitting Diode (LED) Arrays Including Direct Die Attach And Related Assemblies 有权
标题翻译：发光二极管（LED）阵列包括直接贴片和相关组件
公开(公告)号：US20120305949A1
公开(公告)日：2012-12-06
申请号：US13463267
申请日：2012-05-03
申请人： Matthew Donofrio , Christopher P. Hussell , John Adam Edmond
发明人： Matthew Donofrio , Christopher P. Hussell , John Adam Edmond
IPC分类号： H01L33/08
CPC分类号： H01L25/0753 , H01L33/20 , H01L33/505 , H01L33/54 , H01L2924/0002 , H01L2924/00
摘要： An electronic device may include a packaging substrate having a packaging face and first and second pluralities of light emitting diodes electrically and mechanically coupled to the packaging face of the packaging substrate. The packaging substrate may include first and second electrically conductive pads on the packaging face. The light emitting diodes of the first plurality of light emitting diodes may be electrically coupled in parallel between the first electrically conductive pad and an interconnection structure on the packaging face. The light emitting diodes of the second plurality of light emitting diodes may be electrically coupled in parallel between the interconnection structure and the second electrically conductive pad.
摘要翻译：电子设备可以包括具有封装面的封装基板，以及电气和机械耦合到封装基板的封装面的第一和第二多个发光二极管。包装衬底可以包括在包装面上的第一和第二导电垫。第一多个发光二极管的发光二极管可以并联在第一导电焊盘和封装面上的互连结构之间电耦合。第二多个发光二极管的发光二极管可以在互连结构和第二导电焊盘之间并联电耦合。

22. 发明申请

US20120193660A1 HORIZONTAL LIGHT EMITTING DIODES INCLUDING PHOSPHOR PARTICLES 有权
标题翻译：水平发光二极管，包括磷化物颗粒
公开(公告)号：US20120193660A1
公开(公告)日：2012-08-02
申请号：US13018013
申请日：2011-01-31
申请人： Matthew Donofrio , John Adam Edmond , James Ibbetson , David Todd Emerson , Michael John Bergmann , Kevin Haberern , Raymond Rosado , Jeffrey Carl Britt
发明人： Matthew Donofrio , John Adam Edmond , James Ibbetson , David Todd Emerson , Michael John Bergmann , Kevin Haberern , Raymond Rosado , Jeffrey Carl Britt
IPC分类号： H01L33/50 , H01L33/58
CPC分类号： H01L33/505 , H01L33/20 , H01L33/507
摘要： Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 μm is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount.
摘要翻译：水平发光二极管包括在同一面上的阳极和阴极触点以及具有倾斜侧壁的透明衬底。在倾斜侧壁上设置平均当量粒径d50为至少约10μm的保形荧光体层。可以提供高纵横比基底。 LED可以直接连接到底座。

23. 发明申请

US20120193649A1 LIGHT EMITTING DIODE (LED) ARRAYS INCLUDING DIRECT DIE ATTACH AND RELATED ASSEMBLIES 有权
标题翻译：发光二极管（LED）阵列包括直接连接和相关组件
公开(公告)号：US20120193649A1
公开(公告)日：2012-08-02
申请号：US13027006
申请日：2011-02-14
申请人： Matthew Donofrio , John Adam Edmond , Hua-Shuang Kong , Peter S. Andrews , David Todd Emerson
发明人： Matthew Donofrio , John Adam Edmond , Hua-Shuang Kong , Peter S. Andrews , David Todd Emerson
IPC分类号： H01L27/15 , H01L21/82
CPC分类号： H01L25/0753 , H01L33/505 , H01L33/62 , H01L2224/16
摘要： An electronic device may include a packaging substrate having a packaging substrate face with a plurality of electrically conductive pads on the packaging substrate face. A first light emitting diode die may bridge first and second ones of the electrically conductive pads. More particularly, the first light emitting diode die may include first anode and cathode contacts respectively coupled to the first and second electrically conductive pads using metallic bonds. Moreover, widths of the metallic bonds between the first anode contact and the first pad and between the first cathode contact and the second pad may be at least 60 percent of a width of the first light emitting diode die. A second light emitting diode die may bridge third and fourth ones of the electrically conductive pads. The second light emitting diode die may include second anode and cathode contacts respectively coupled to the third and fourth electrically conductive pads using metallic bonds. Widths of the metallic bonds between the second anode contact and the second pad and between the second cathode contact and the third pad may be at least 60 percent of a width of the first light emitting diode die.
摘要翻译：电子设备可以包括具有包装基板面的封装基板，在封装基板面上具有多个导电焊盘。第一发光二极管管芯可以桥接第一和第二导电焊盘。更具体地，第一发光二极管管芯可以包括使用金属接合分别耦合到第一和第二导电焊盘的第一阳极和阴极触点。此外，第一阳极接触件和第一焊盘之间以及第一阴极接触件和第二焊盘之间的金属接合的宽度可以是第一发光二极管管芯的宽度的至少60％。第二发光二极管管芯可以桥接第三和第四导电焊盘。第二发光二极管管芯可以包括使用金属接合分别耦合到第三和第四导电焊盘的第二阳极和阴极触点。第二阳极接触件和第二焊盘之间以及第二阴极接触件和第三焊盘之间的金属接合的宽度可以是第一发光二极管管芯的宽度的至少60％。

24. 发明授权

US08183588B2 High efficiency group III nitride LED with lenticular surface 有权
标题翻译：高效率III族氮化物LED带透镜表面
公开(公告)号：US08183588B2
公开(公告)日：2012-05-22
申请号：US12401843
申请日：2009-03-11
申请人： John Adam Edmond , David Beardsley Slater, Jr. , Jayesh Bharathan , Matthew Donofrio
发明人： John Adam Edmond , David Beardsley Slater, Jr. , Jayesh Bharathan , Matthew Donofrio
IPC分类号： H01L31/052
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A light emitting diode is disclosed that includes a conductive substrate, a bonding metal on the conductive substrate and a barrier metal layer on the bonding metal. A mirror layer is encapsulated by the barrier metal layer and is isolated from the bonding metal by the barrier layer. A p-type gallium nitride epitaxial layer is on the encapsulated mirror, an indium gallium nitride active layer is on the p-type layer, and an n-type gallium nitride layer is on the indium gallium nitride layer, and a bond pad is made to the n-type gallium nitride layer.
摘要翻译：公开了一种发光二极管，其包括导电基板，导电基板上的接合金属和接合金属上的阻挡金属层。镜面层被阻挡金属层封装，并通过阻挡层与结合金属隔离。 p型氮化镓外延层位于封装反射镜上，氮化铟镓有源层位于p型层上，n型氮化镓层位于铟镓氮层上，形成接合焊盘到n型氮化镓层。

25. 发明授权

US08154039B2 High efficiency group III nitride LED with lenticular surface 有权
标题翻译：高效率III族氮化物LED带透镜表面
公开(公告)号：US08154039B2
公开(公告)日：2012-04-10
申请号：US12401832
申请日：2009-03-11
申请人： John Adam Edmond , David Beardsley Slater, Jr. , Jayesh Bharathan , Matthew Donofrio
发明人： John Adam Edmond , David Beardsley Slater, Jr. , Jayesh Bharathan , Matthew Donofrio
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode.
摘要翻译：公开了一种发光二极管，其具有在二极管的顶表面的部分上的欧姆接触的垂直取向和与二极管的发光区相邻的镜层。二极管包括通过二极管的顶部欧姆接触的几何投影下方的镜面层中的开口，其限定了二极管的反射镜层和发光区域之间的非接触区域，以促进电流流过而不是在非接触区域又减少欧姆接触下方的发光复合数，并增加二极管透明部分中发光复合的数量。

26. 发明授权

US09052416B2 Ultra-high efficacy semiconductor light emitting devices 有权
标题翻译：超高效半导体发光器件
公开(公告)号：US09052416B2
公开(公告)日：2015-06-09
申请号：US13087510
申请日：2011-04-15
申请人： John Adam Edmond , Christopher P. Hussell
发明人： John Adam Edmond , Christopher P. Hussell
IPC分类号： H01J1/62 , H01J63/04 , F21V8/00 , F21K99/00 , G02B5/02 , F21Y101/02
CPC分类号： G02B6/0003 , F21K9/232 , F21K9/60 , F21K9/61 , F21K9/64 , F21V29/70 , F21Y2115/10 , G02B5/02 , G02B6/001 , G02B6/0035 , G02B6/005 , G02B6/0073 , G02B6/0096
摘要： A semiconductor light emitting apparatus includes an elongated hollow wavelength conversion tube that comprises an elongated wavelength conversion tube wall having wavelength conversion material such as phosphor dispersed therein uniformly or non-uniformly. The tube need not be cylindrical. A semiconductor light emitting device is oriented to emit light inside the elongated hollow wavelength conversion tube to impinge upon the elongated wavelength conversion tube wall and the wavelength conversion material dispersed therein.
摘要翻译：半导体发光装置包括细长的中空波长转换管，其包括具有均匀或不均匀分散的诸如磷光体的波长转换材料的细长波长转换管壁。管不需要是圆柱形的。半导体发光器件被定向以在细长的中空波长转换管内发光，以照射到分散在其中的细长波长转换管壁和波长转换材料。

27. 发明申请

US20130271972A1 GAS COOLED LED LAMP 有权
标题翻译：气体冷却LED灯
公开(公告)号：US20130271972A1
公开(公告)日：2013-10-17
申请号：US13446759
申请日：2012-04-13
申请人： Christopher P. Hussell , John Adam Edmond , Gerald H. Negley
发明人： Christopher P. Hussell , John Adam Edmond , Gerald H. Negley
IPC分类号： F21V29/00 , H01R43/00 , F21V9/00
CPC分类号： F21K9/13 , F21K9/23 , F21K9/232 , F21K9/64 , F21V3/00 , F21V3/08 , F21V9/30 , F21V29/85 , F21Y2107/00 , F21Y2113/13 , F21Y2115/10 , Y10T29/49117
摘要： A gas cooled LED lamp and submount is disclosed. The centralized nature of the LEDs allows the LEDs to be configured near the central portion of the optical envelope of the lamp. In some embodiments, the LEDs can be mounted on or fixed to a light transmissive submount. In some embodiments, LEDs can be disposed on both sides of a two-sided submount, or on thee or more sides if the submount structure includes three or more mounting surfaces. In example embodiments, the LEDs can be cooled and/or cushioned by a gas in thermal communication with the LED array to enable the LEDs to maintain an appropriate operating temperature for efficient operation and long life. In some embodiments, the gas is at a pressure of from about 0.5 to about 10 atmospheres and has a thermal conductivity of at least about 60 mW/m-K.
摘要翻译：公开了一种气体冷却的LED灯和底座。 LED的集中性使得LED可以配置在灯的光学外壳的中心部分附近。在一些实施例中，LED可以安装在透光底座上或固定到透光底座上。在一些实施例中，如果底座结构包括三个或更多个安装表面，则LED可以设置在双面底座的两侧上，或者在其一侧或更多侧上。在示例性实施例中，可以通过与LED阵列热连通的气体来冷却和/或缓冲LED，以使得LED能够保持适当的操作温度以有效地操作和长寿命。在一些实施方案中，气体处于约0.5至约10个大气压的压力，并且具有至少约60mW / m-K的热导率。

28. 发明授权

US08513686B2 High output small area group III nitride LEDs 有权
标题翻译：高输出小面积III族氮化物LED
公开(公告)号：US08513686B2
公开(公告)日：2013-08-20
申请号：US11037965
申请日：2005-01-18
申请人： John Adam Edmond
发明人： John Adam Edmond
IPC分类号： H01L33/26
CPC分类号： H01L33/405 , H01L33/20 , H01L33/32 , H01L2224/48247 , H01L2924/181 , H01L2924/00012
摘要： A light emitting diode is disclosed with advantageous output on a per unit area basis. The diode includes an area of less than 100,000 square microns, operates at a forward voltage of less than 4.0 volts, produces a radiant flux of at least 24 milliwatts at 20 milliamps drive current, and emits at a dominant wavelength between about 395 and 540 nanometers.
摘要翻译：公开了一种以每单位面积为基础的有利输出的发光二极管。二极管包括小于100,000平方微米的面积，在小于4.0伏特的正向电压下工作，在20毫安驱动电流下产生至少24毫瓦的辐射通量，并以约395和540纳米之间的主波长发射。

29. 发明授权

US08004172B2 Semiconductor light emitting apparatus including elongated hollow wavelength conversion tubes and methods of assembling same 有权
标题翻译：包括细长型中空波长转换管的半导体发光装置及其组装方法
公开(公告)号：US08004172B2
公开(公告)日：2011-08-23
申请号：US12273216
申请日：2008-11-18
申请人： Christopher P. Hussell , John Adam Edmond
发明人： Christopher P. Hussell , John Adam Edmond
IPC分类号： H01J1/62
CPC分类号： F21V15/01 , F21K9/00 , F21K9/61 , F21K9/64 , F21V29/70 , F21Y2115/10 , G02B6/0003 , G02B6/001 , G02B6/0035 , G02B6/005 , G02B6/0096
摘要： A semiconductor light emitting apparatus includes an elongated hollow wavelength conversion tube that includes an elongated wavelength conversion tube wall having wavelength conversion material, such as phosphor, dispersed therein. A semiconductor light emitting device is oriented to emit light inside the elongated hollow wavelength conversion tube to impinge upon the elongated wavelength conversion tube wall and the wavelength conversion material dispersed therein. The elongated hollow wavelength conversion tube may have an open end, a crimped end, a reflective end, and/or other configurations. Multiples tubes and/or multiple semiconductor light emitting devices may also be used in various configurations. Related assembling methods are also described.
摘要翻译：半导体发光装置包括细长的中空波长转换管，其包括分散在其中的波长转换材料（例如磷光体）的细长波长转换管壁。半导体发光器件被定向以在细长的中空波长转换管内发光，以照射到分散在其中的细长波长转换管壁和波长转换材料。细长的中空波长转换管可以具有开口端，压接端，反射端和/或其它构造。多个管和/或多个半导体发光器件也可以以各种配置使用。还描述了相关的组装方法。

30. 发明申请

US20100052004A1 LED Bonding Structures and Methods of Fabricating LED Bonding Structures 有权
标题翻译： LED接合结构和LED结合结构的制造方法
公开(公告)号：US20100052004A1
公开(公告)日：2010-03-04
申请号：US12614700
申请日：2009-11-09
申请人： David Beardsley Slater, JR. , John Adam Edmond
发明人： David Beardsley Slater, JR. , John Adam Edmond
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/38 , H01L33/62 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： An LED is disclosed that includes a conductive submount, a bond pad having a total volume less than 3×10−5 mm3 conductively joined to the submount, a first ohmic contact on the bond pad opposite from the submount, an epitaxial region comprising at least a p-type layer and an n-type layer on the first ohmic contact, and an electrode to the epitaxial region opposite from the first ohmic contact.
摘要翻译：公开了一种LED，其包括导电基座，导电接合到基座的总体积小于3×10-5mm 3的接合焊盘，在与基座相反的接合焊盘上的第一欧姆接触，至少包括外延区域第一欧姆接触上的p型层和n型层，以及与第一欧姆接触相对的外延区的电极。

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