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21. 发明授权

US07659185B2 Method for forming silicon thin-film on flexible metal substrate 失效
标题翻译：在柔性金属基板上形成硅薄膜的方法
公开(公告)号：US07659185B2
公开(公告)日：2010-02-09
申请号：US10570285
申请日：2004-09-02
申请人： Jin Jang , Jong-Hyun Choi , Seung-Soo Kim , Jae-Hwan Oh , Jun-Hyuk Chon
发明人： Jin Jang , Jong-Hyun Choi , Seung-Soo Kim , Jae-Hwan Oh , Jun-Hyuk Chon
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , H01L21/02425 , H01L21/02488 , H01L21/02672 , H01L27/1277 , H01L29/78603
摘要： Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) is formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.
摘要翻译：公开了一种在基板上形成硅薄膜的方法，更具体地说，涉及一种在柔性金属基板上形成质量好的多晶硅薄膜的方法。准备金属基板（110），使金属基板（110）的表面变平。在金属基板（110）上形成绝缘膜（120）。在绝缘膜（120）上形成非晶硅层（130）。金属层（140）形成在非晶硅层（130）上。将金属基板（110）上的样品加热并结晶。

22. 发明申请

US20080248218A1 METHOD OF FORMING CARBON NANOTUBES, FIELD EMISSION DISPLAY DEVICE HAVING CARBON NANOTUBES FORMED THROUGH THE METHOD, AND METHOD OF MANUFACTURING FIELD EMISSION DISPLAY DEVICE 有权
标题翻译：形成碳纳米管的方法，具有通过该方法形成的碳纳米管的场发射显示装置以及制造场致发射显示装置的方法
公开(公告)号：US20080248218A1
公开(公告)日：2008-10-09
申请号：US12139154
申请日：2008-06-13
申请人： Jin Jang , Kyu-Chang Park , Sung-Hoon Lim
发明人： Jin Jang , Kyu-Chang Park , Sung-Hoon Lim
IPC分类号： C23C16/26 , H01J9/00 , B05D1/36
CPC分类号： H01J1/304 , B82Y10/00 , H01J9/025 , H01J2201/30469 , H01J2329/00
摘要： There are provided a method of forming carbon nano tubes, a field emission display device having the carbon nanotubes formed using the method, and a method of manufacturing the field emission display device. The method of forming carbon nanotubes includes forming a catalytic metal layer on a substrate, forming an insulation layer on the catalytic metal layer, and forming carbon nanotubes on the insulation layer.
摘要翻译：提供了一种形成碳纳米管的方法，具有使用该方法形成的碳纳米管的场致发射显示装置以及该场致发射显示装置的制造方法。形成碳纳米管的方法包括在基板上形成催化金属层，在催化金属层上形成绝缘层，在绝缘层上形成碳纳米管。

23. 发明申请

US20060232521A1 Circuit and method for driving organic light-emitting diode 有权
标题翻译：用于驱动有机发光二极管的电路和方法
公开(公告)号：US20060232521A1
公开(公告)日：2006-10-19
申请号：US11396932
申请日：2006-04-03
申请人： Jin Jang , Jae-Won Choi
发明人： Jin Jang , Jae-Won Choi
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0819 , G09G2300/0842 , G09G2310/0251 , G09G2310/0262 , G09G2320/0233 , G09G2320/043
摘要： Disclosed are driving circuit and method which are used in an Organic Light Emitting Diode (OLED), and more specifically to a driving circuit of an organic light emitting diode and a driving method thereof which use a thin film transistor (TFT) as an active device. The driving circuit and method can uniformly produce luminance of the light emitting element because the driving current is produced by compensating the unevenness of threshold voltage of the active device. Further, the variance of the threshold voltage Vth due to deterioration of the transistor produced according as the driving circuit of the OLED is utilized for a long time is also compensated, thereby increasing life of the display device which applies the driving circuit of the OLED.
摘要翻译：公开了用于有机发光二极管（OLED）的驱动电路和方法，更具体地说，涉及使用薄膜晶体管（TFT）作为有源器件的有机发光二极管的驱动电路及其驱动方法。驱动电路和方法可以均匀地产生发光元件的亮度，因为通过补偿有源器件的阈值电压的不均匀性来产生驱动电流。此外，由于由于OLED的驱动电路而产生的晶体管的劣化导致的阈值电压V Sub的变化很长时间也被补偿，从而延长了显示装置的使用寿命应用OLED的驱动电路。

24. 发明授权

US07118937B2 Fabrication method of thin-film transistor array with self-organized organic semiconductor 失效
标题翻译：具有自组织有机半导体的薄膜晶体管阵列的制造方法
公开(公告)号：US07118937B2
公开(公告)日：2006-10-10
申请号：US10882933
申请日：2004-07-01
申请人： Jin Jang , Sung-Hwan Kim , Hye-Young Choi
发明人： Jin Jang , Sung-Hwan Kim , Hye-Young Choi
IPC分类号： H01I51/40
CPC分类号： H01L27/283 , B82Y10/00 , B82Y30/00 , H01L51/0052 , H01L51/0516 , H01L51/0545 , H01L51/56
摘要： The present invention relates to a method of selectively depositing an organic semiconductor material and a method of manufacturing an organic semiconductor thin film transistor array. Since the thin film transistor array is formed by locally performing a plasma process on a substrate before depositing an organic semiconductor active layer on the substrate, the organic semiconductor material is deposited on only the organic semiconductor active layer having an island shape. Therefore, it is not necessary to use a shadow mask method or a photolithography method to manufacture an active matrix array. Accordingly, the present invention has advantages in that it is possible to obtain a high resolution thin film transistor array and to prevent characteristics of the thin film transistors in the array from being deteriorated.
摘要翻译：本发明涉及有选择地沉积有机半导体材料的方法和制造有机半导体薄膜晶体管阵列的方法。由于薄膜晶体管阵列是通过在衬底上淀积有机半导体有源层之前在衬底上局部地执行等离子体处理而形成的，所以有机半导体材料只沉积在具有岛状的有机半导体有源层上。因此，不需要使用荫罩法或光刻法来制造有源矩阵阵列。因此，本发明的优点在于可以获得高分辨率薄膜晶体管阵列，并且防止阵列中的薄膜晶体管的特性劣化。

25. 发明申请

US20050029611A1 Image sensor comprising thin film transistor optical sensor having offset region and method of manufacturing the same 有权
标题翻译：图像传感器包括具有偏移区域的薄膜晶体管光学传感器及其制造方法
公开(公告)号：US20050029611A1
公开(公告)日：2005-02-10
申请号：US10732320
申请日：2003-12-09
申请人： Jin Jang , Ji Hur , Hyun Nam
发明人： Jin Jang , Ji Hur , Hyun Nam
IPC分类号： H01L29/786 , H01L27/146 , H01L31/0376 , H01L31/10 , H01L31/0232
CPC分类号： H01L31/0376 , H01L27/14643 , H01L27/14658 , H01L27/14692 , Y02E10/50
摘要： The present invention relates to an image sensor comprising an amorphous silicon thin-film transistor optical sensor which functions as an image sensor used for an X-ray photography device, a fingerprint recognition apparatus, a scanner, etc., and a method of manufacturing the image sensor. Since the thin-film transistor optical sensor according to the present invention has a high-resistance silicon region by disposing an offset region in a channel region, a dark leakage current of the optical sensor remains in a low level even under a high voltage. Therefore, it is possible to apply a high voltage to the thin-film transistor optical sensor according to the present invention so that the image senor can be sensitive to a weak light. In addition, since the storage capacitance in the image sensor is formed in a double structure, the image sensor has a high value of capacitance. Furthermore, since a lower common electrode is electrically connected to an upper common electrode, the image sensor has a stable structure.
摘要翻译：本发明涉及一种图像传感器，包括用作用于X射线摄影装置的图像传感器，指纹识别装置，扫描仪等的非晶硅薄膜晶体管光学传感器及其制造方法图像传感器。由于根据本发明的薄膜晶体管光学传感器通过在沟道区域中设置偏移区域而具有高电阻硅区域，所以即使在高电压下，光学传感器的暗漏电流也保持在低电平。因此，可以对根据本发明的薄膜晶体管光学传感器施加高电压，使得图像传感器可以对弱光敏感。此外，由于图像传感器中的存储电容形成为双重结构，所以图像传感器具有高的电容值。此外，由于下部公共电极与上部公共电极电连接，所以图像传感器具有稳定的结构。

26. 发明授权

US06648711B1 Field emitter having carbon nanotube film, method of fabricating the same, and field emission display device using the field emitter 失效
标题翻译：具有碳纳米管膜的场致发射体，其制造方法以及使用场致发射体的场致发射显示装置
公开(公告)号：US06648711B1
公开(公告)日：2003-11-18
申请号：US09592257
申请日：2000-06-12
申请人： Jin Jang , Suk-jae Chung , Sung-hoon Lim , Jae-eun Yoo
发明人： Jin Jang , Suk-jae Chung , Sung-hoon Lim , Jae-eun Yoo
IPC分类号： H01J904
CPC分类号： B82Y10/00 , H01J1/304 , H01J9/025 , H01J31/127 , Y10S977/721 , Y10S977/723 , Y10S977/742 , Y10S977/843 , Y10S977/844 , Y10S977/888
摘要： A field emitter having a high current density even at a low voltage using a carbon nanotube film, a method of manufacturing the same, and a field emission display device having the field emitter, are provided, The field emitter includes an insulating substrate. a thin film transistor formed on the insulating substrate, the thin film transistor having a semiconductor layer, a source electrode, a drain electrode and a gate electrode, and an electron emitting unit formed of a carbon nanotube film on the drain electrode of the thin film transistor The thin film transistor can be a coplanar-type transistor, a stagger-type transistor, or an inverse stagger-type transistor. The surface of a portion of the drain electrode, which contacts the carbon nanotube film, contains catalytic metal which is transition metal such as nickel or cobalt. Alternatively, the drain electrode itself can be formed of catalytic metal for carbon nanotube growth.
摘要翻译：提供了即使在使用碳纳米管膜的低电压下也具有高电流密度的场致发射体，其制造方法以及具有该场致发射体的场致发射显示装置。场发射器包括绝缘基板。形成在所述绝缘基板上的薄膜晶体管，所述薄膜晶体管具有半导体层，源极，漏极和栅电极，以及由所述薄膜的漏电极上的碳纳米管膜形成的电子发射单元晶体管薄膜晶体管可以是共面型晶体管，交错型晶体管或反交错型晶体管。与碳纳米管膜接触的漏电极的一部分的表面含有催化金属，其为镍或钴等过渡金属。或者，漏电极本身可以由用于碳纳米管生长的催化金属形成。

27. 发明授权

US06451637B1 Method of forming a polycrystalline silicon film 有权
标题翻译：形成多晶硅膜的方法
公开(公告)号：US06451637B1
公开(公告)日：2002-09-17
申请号：US09493201
申请日：2000-01-28
申请人： Jin Jang , Sung-Hoon Kim
发明人： Jin Jang , Sung-Hoon Kim
IPC分类号： H01L2100
CPC分类号： C30B1/023 , C30B29/06
摘要： The present invention related to a method of forming a polycrystalline silicon film which forms a polysilicon film by crystallizing silicon by means of carrying out plasma exposure and applying an electric field thereon. The present invention includes the steps of forming a metal plasma exposure layer on a substrate wherein the metal plasma exposure layer works as a catalyst for metal induced crystallization, and depositing amorphous silicon on the substrate on which the plasma exposure layer is formed while an electric field is applied thereon. The present invention enables to crystallize the whole film in such a short annealing time less than 10 minutes by forming a metal layer under a silicon layer by plasma particle exposure and, successively, by crystallizing silicon which is being formed under 520° C. And, the present invention reduces metal contamination in the crystallized silicon film as the amount of metal is easy to be controlled by plasma exposure time. Moreover, the present invention enables to form a polysilicon film several &mgr;m thick as it is easy to form polysilicon of which thickness does not matter.
摘要翻译：本发明涉及通过进行等离子体曝光和在其上施加电场而使硅结晶而形成多晶硅膜的多晶硅膜的形成方法。本发明包括在基板上形成金属等离子体曝光层的步骤，其中金属等离子体曝光层用作金属诱导结晶的催化剂，并在其上形成等离子体曝光层的基板上沉积非晶硅，同时电场施加在其上。本发明能够通过在等离子体颗粒曝光下在硅层下形成金属层，并且通过在520℃下形成硅来结晶在短的退火时间，使其在短于10分钟的短时间内使整个膜结晶。本发明通过等离子体曝光时间容易地控制金属的量来减少结晶硅膜中的金属污染。此外，本发明能够形成几个厚度的多晶硅膜，因为容易形成厚度无关的多晶硅。

28. 发明授权

US06326226B1 Method of crystallizing an amorphous film 失效
标题翻译：使非晶膜结晶的方法
公开(公告)号：US06326226B1
公开(公告)日：2001-12-04
申请号：US09115498
申请日：1998-07-14
申请人： Jin Jang , Soo-Young Yoon , Jae-Young Oh
发明人： Jin Jang , Soo-Young Yoon , Jae-Young Oh
IPC分类号： H01L2120
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022
摘要： A method of crystallizing an amorphous film includes the steps of forming an amorphous film capable of being crystallized on a substrate, the amorphous film being in contact with a metal layer; and crystallizing the amorphous film by forming an electric field in the amorphous film and the metal layer, while simultaneously subjecting the amorphous film and the metal layer to a thermal treatment, thereby crystallizing the amorphous film.
摘要翻译：结晶非晶膜的方法包括以下步骤：形成能够在基板上结晶的非晶膜，所述非晶膜与金属层接触; 并且通过在非晶膜和金属层中形成电场而结晶非晶膜，同时对非晶膜和金属层进行热处理，从而使非晶膜结晶。

29. 发明授权

US06312979B1 Method of crystallizing an amorphous silicon layer 有权
标题翻译：使非晶硅层结晶的方法
公开(公告)号：US06312979B1
公开(公告)日：2001-11-06
申请号：US09299571
申请日：1999-04-27
申请人： Jin Jang , Soo Young Yoon , Hyun Churl Kim
发明人： Jin Jang , Soo Young Yoon , Hyun Churl Kim
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022
摘要： The present invention relates to a method of crystallizing an amorphous silicon layer which is carried out by depositing a crystallization-inducing substance on an amorphous silicon layer on crystallizing the amorphous silicon layer by metal-induced crystallization whereby speed of crystallizing silicon is increased and metal contamination by MIC is reduced. The present invention includes the steps of depositing a crystallizing-induced layer of an induced substance for crystallizing silicon on an amorphous silicon layer wherein the crystallizing induced layer is formed to the thickness under 0.03 angstroms, and treating thermally the amorphous silicon layer on which the crystallizing-induced layer is deposited. In another aspect, the present invention includes the steps of forming a crystallizing-induced substance on an amorphous silicon layer wherein the crystallizing-induced substance has predetermined density on an unit area of the amorphous silicon layer, and treating thermally the amorphous silicon layer on which the crystallizing-induced substance is formed.
摘要翻译：本发明涉及一种结晶非晶硅层的方法，该方法是通过在非晶硅层上沉淀结晶诱导物质而进行的，该结晶诱导物质通过金属诱导结晶使非晶硅层结晶，结晶硅的速度增加，金属污染通过MIC减少。本发明包括以下步骤：在非晶硅层上沉积用于结晶硅的诱导物质的结晶诱导层，其中结晶诱导层形成为厚度为0.03埃，并且将非晶硅层热处理结晶被沉积。另一方面，本发明包括以下步骤：在非晶硅层上形成结晶诱发物质，其中结晶诱发物质在非晶硅层的单位面积上具有预定的密度，并对其上的非晶硅层进行热处理形成结晶诱发物质。

30. 发明授权

US6037611A Thin film transistor and its fabrication 失效
标题翻译：薄膜晶体管及其制造
公开(公告)号：US6037611A
公开(公告)日：2000-03-14
申请号：US980311
申请日：1997-11-28
申请人： Jin Jang , Kyung-Ha Lee
发明人： Jin Jang , Kyung-Ha Lee
IPC分类号： H01L27/12 , H01L21/336 , H01L29/786 , H01L29/04 , H01L29/76
CPC分类号： H01L29/66757 , H01L29/78621
摘要： A method of fabricating a thin film transistor includes the steps of forming an active layer on an insulating substrate; forming an insulating layer and a first metal layer on the active layer; forming a photoresist pattern for forming a gate electrode on the metal layer; etching the metal layer and the insulating layer by using the photoresist pattern as a mask, and respectively forming a gate electrode and a gate insulating layer to expose a part of the active layer; forming an amorphous silicon layer on the resultant whole surface of the substrate; forming a second metal layer on the amorphous silicon layer; patterning the second metal layer and the amorphous silicon layer by a photolithographic process to form an offset layer and a source/drain electrode; and carrying out a lift-off process to remove the photoresist pattern, and exposing the surface on the gate electrode.
摘要翻译：制造薄膜晶体管的方法包括在绝缘基板上形成有源层的步骤; 在所述有源层上形成绝缘层和第一金属层; 形成用于在所述金属层上形成栅电极的光致抗蚀剂图案; 通过使用光致抗蚀剂图案作为掩模蚀刻金属层和绝缘层，并分别形成栅极电极和栅极绝缘层以暴露活性层的一部分; 在所得基板的整个表面上形成非晶硅层; 在所述非晶硅层上形成第二金属层; 通过光刻工艺图案化第二金属层和非晶硅层以形成偏移层和源极/漏极; 并进行剥离处理以除去光致抗蚀剂图案，并使栅电极上的表面露出。

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