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21. 发明授权

US5563979A Erbium-doped planar optical device 失效
标题翻译：铒掺杂平面光学器件
公开(公告)号：US5563979A
公开(公告)日：1996-10-08
申请号：US522012
申请日：1995-08-31
申请人： Allan J. Bruce , William H. Grodkiewicz , Gerald Nykolak , Joseph Shmulovich , Yiu-Huen Wong
发明人： Allan J. Bruce , William H. Grodkiewicz , Gerald Nykolak , Joseph Shmulovich , Yiu-Huen Wong
IPC分类号： G02B6/12 , G02B6/136 , G02F1/35 , G02F1/39 , H01S3/06 , H01S3/063 , H01S3/10 , H01S3/16 , G02B6/16 , H01S3/07
CPC分类号： G02B6/136 , H01S3/063 , G02B2006/12169 , H01S3/1608
摘要： An active optical device comprises a glass, waveguiding structure disposed on a substantially planar principal surface of a substrate. The structure includes a silica-based, erbium-doped active core. The active core has an absolute erbium concentration of at least about 0.5.times.10.sup.20 atoms per cubic centimeter, and a radiative lifetime of the erbium lasing level of at least about 5 milliseconds. The active core does not contain significant amounts of alkali metals or alkaline earth metals but does contain at least two modifier metals. Also disclosed is a method for forming an active optical device, including the step of depositing an erbium-doped active core by sputtering.
摘要翻译：有源光学器件包括设置在基板的基本平坦的主表面上的玻璃波导结构。该结构包括二氧化硅基铒掺杂活性核。活性核心的绝对铒浓度至少约为0.5×1020原子/立方厘米，铒激发光照射的寿命至少约为5毫秒。活性核不含有显着量的碱金属或碱土金属，但含有至少两种改性金属。还公开了一种用于形成有源光学器件的方法，包括通过溅射沉积铒掺杂的有源核的步骤。

22. 发明授权

US5119460A Erbium-doped planar optical device 失效
标题翻译：铒掺杂平面光学器件
公开(公告)号：US5119460A
公开(公告)日：1992-06-02
申请号：US691262
申请日：1991-04-25
申请人： Allan J. Bruce , Joseph Shmulovich , Amy Wong , Yiu-Huen Wong
发明人： Allan J. Bruce , Joseph Shmulovich , Amy Wong , Yiu-Huen Wong
IPC分类号： G02B6/12 , G02F1/35 , H01S3/06 , H01S3/063 , H01S3/16 , H01S3/17
CPC分类号： H01S3/063 , H01S3/1608
摘要： An active optical device comprises a glass, waveguiding structure disposed on a substantially planar principal surface of a substrate. The structure includes a silica-based, erbium-doped active core. The active core has an erbium-to-silicon atomic ratio of at least about 0.01, an absolute erbium concentration of at least about 1.4.times.10.sup.20 atoms per cubic centimeter, and a radiative lifetime of the erbium lasing level of at least about 7 milliseconds. Also disclosed is a method for forming an active optical device, including the step of depositing an erbium-doped active core by sputtering.

23. 发明授权

US5483613A Optical device with substrate and waveguide structure having thermal matching interfaces 失效
标题翻译：具有基板和波导结构的光学器件具有热匹配接口
公开(公告)号：US5483613A
公开(公告)日：1996-01-09
申请号：US291387
申请日：1994-08-16
申请人： Allan J. Bruce , Herman M. Presby
发明人： Allan J. Bruce , Herman M. Presby
IPC分类号： G02B6/122 , G02B6/10 , G02B6/12 , G02B6/126
CPC分类号： G02B6/105 , G02B6/126 , G02B2006/12038
摘要： The present invention provides polarization-independent optical devices by reducing or eliminating strain-induced birefrigence associated with prior device structures. In a first embodiment, an optical device is produced comprising a doped silica substrate having a coefficient of thermal expansion between 8.times.10.sup.-7 .degree. C..sup.-1 and 15.times.10.sup.-7 .degree.C..sup.-1. On the doped silica substrate is formed a doped silica waveguiding structure having a coefficient of thermal expansion between 8.times.10.sup.-7 .degree. C..sup.-1 and 15.times.10.sup.-7 .degree. C..sup.-1. Alternatively, the coefficient of thermal expansion of the doped silica substrate is selected to be approximately 90% to 110% of the coefficient of thermal expansion of the doped silica waveguiding structure. In another aspect, the present invention provides an optical device comprising a doped silica substrate having a doping gradient from a lower surface to an upper surface. The doping level at the upper surface has a coefficient of thermal expansion approximating the coefficient of thermal expansion of a doped silica waveguiding structure formed thereon.
摘要翻译：本发明通过减少或消除与现有器件结构相关联的应变引发的双折射来提供偏振无关的光学器件。在第一实施例中，制造的光学器件包括具有8×10 -7℃-1和15×10 -7℃-1之间的热膨胀系数的掺杂二氧化硅衬底。在掺杂二氧化硅衬底上形成具有8×10 -7℃-1和15×10 -7℃-1之间的热膨胀系数的掺杂二氧化硅波导结构。或者，掺杂二氧化硅衬底的热膨胀系数被选择为掺杂二氧化硅波导结构的热膨胀系数的大约90％至110％。在另一方面，本发明提供一种光学器件，其包括掺杂二氧化硅衬底，其具有从下表面到上表面的掺杂梯度。上表面的掺杂浓度具有近似于其上形成的掺杂二氧化硅波导结构的热膨胀系数的热膨胀系数。

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