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21. 发明授权

US06749770B2 Method of etching an anisotropic profile in platinum 失效
标题翻译：在铂中蚀刻各向异性轮廓的方法
公开(公告)号：US06749770B2
公开(公告)日：2004-06-15
申请号：US09948028
申请日：2001-09-05
申请人： Jeng H. Hwang , Chentsau Ying , Kang-Lie Chiang , Steve S. Y. Mak
发明人： Jeng H. Hwang , Chentsau Ying , Kang-Lie Chiang , Steve S. Y. Mak
IPC分类号： C09K1300
CPC分类号： H01L28/60 , C23F4/00 , H01L21/32136 , H01L21/32139
摘要： A method of etching a platinum electrode layer disposed on a substrate to produce a semiconductor device including a plurality of platinum electrodes. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the platinum electrode layer by employing a plasma of an etchant gas comprising nitrogen and a halogen (e.g. chlorine), and a gas selected from the group consisting of a noble gas (e.g. argon), BCl3, HBr, SiCl4 and mixtures thereof. The substrate may be heated in a reactor chamber having a dielectric window including a deposit-receiving surface having a surface finish comprising a peak-to-valley roughness height with an average height value of greater than about 1000 Å.
摘要翻译：一种蚀刻设置在基板上的铂电极层的方法，以制造包括多个铂电极的半导体器件。该方法包括将衬底加热到大于约150℃的温度，并且通过使用包含氮和卤素（例如氯）的蚀刻剂气体的等离子体和选自以下的气体来蚀刻铂电极层：惰性气体（例如氩气），BCl 3，HBr，SiCl 4及其混合物。衬底可以在具有介电窗口的反应器室中加热，所述电介质窗口包括具有表面光洁度的沉积物接收表面，所述沉积物接收表面包括具有大于约的平均高度值的峰 - 谷粗糙度高度。

22. 发明授权

US06436838B1 Method of patterning lead zirconium titanate and barium strontium titanate 失效
标题翻译：图案化钛酸锆钛酸钡和钛酸钡锶的方法
公开(公告)号：US06436838B1
公开(公告)日：2002-08-20
申请号：US09556078
申请日：2000-04-21
申请人： Chen Tsan Ying , Jeng H. Hwang , Hideyuki Yamauchi , Seayoul Park , Yohei Kawase
发明人： Chen Tsan Ying , Jeng H. Hwang , Hideyuki Yamauchi , Seayoul Park , Yohei Kawase
IPC分类号： H01L21302
CPC分类号： H01L21/31122 , H01L21/31691
摘要： In an embodiment of the present invention, a method is provided of patterning PZT layers or BST layers. For example, a PZT layer or a BST layer is plasma etched through a high-temperature-compatible mask such as a titanium nitride (TiN) mask, using a plasma feed gas comprising as a primary etchant boron trichloride (BCl3) or silicon tetrachloride (SiCi4). Although BCl3 or SiCl4 may be used alone as the etchant plasma source gas, it is typically used in combination with an essentially inert gas. Preferably the essentially inert gas is argon. Other potential essentially inert gases which may be used include xenon, krypton, and helium. In some instances O2 or N2, or Cl2, or a combination thereof may be added to the primary etchant to increase the etch rate of PZT or BST relative to adjacent materials, such as the high-temperature-compatible masking material. A TiN masking material can easily be removed without damaging underlying oxides. The selectivity of PZT or BST relative to TiN is very good, with the ratio of the etch rate of the PZT film to the etch rate of the TiN mask typically being better than 20:1. In addition, the etch rate for PZT using a BCl3—comprising plasma source gas is typically in excess of 2,000 Å per minute. A substrate bias power is applied to direct ions produced from the BCl3 or SiCl4 toward the surface to be etched. The bias power is controlled to avoid sputtering of a conductive layer or layers in contact with the PZT layer, so that the surface of the etched PZT is not contaminated by a conductive material, which can cause the semiconductor device which includes the patterned PZT to short out.
摘要翻译：在本发明的一个实施例中，提供了一种图案化PZT层或BST层的方法。例如，使用包含作为主要蚀刻剂三氯化硼（BCl 3）或四氯化硅（BCl 3）的等离子体进料气体，通过诸如氮化钛（TiN）掩模的高温兼容掩模等离子体蚀刻PZT层或BST层 SiCi4）。尽管BCl 3或SiCl 4可以单独用作蚀刻剂等离子体源气体，但通常与基本上惰性气体组合使用。优选地，基本上惰性的气体是氩气。可以使用的其它潜在的基本上惰性的气体包括氙，氪和氦。在一些情况下，可以向初级蚀刻剂中加入O 2或N 2或Cl 2或其组合以增加PZT或BST相对于相邻材料（例如高温兼容掩蔽材料）的蚀刻速率。可以容易地去除TiN掩模材料而不损坏潜在的氧化物。 PZT或BST相对于TiN的选择性非常好，PZT膜的蚀刻速率与TiN掩模的蚀刻速率之比通常优于20：1。此外，使用含有BCl3的等离子体源气体的PZT的蚀刻速率通常超过每分钟2000埃。施加衬底偏置功率以将从BCl 3或SiCl 4产生的离子导向待蚀刻的表面。控制偏置功率以避免溅射与PZT层接触的导电层，使得蚀刻的PZT的表面不被导电材料污染，这可导致包括图案化PZT的半导体器件短路出来

23. 发明授权

US6087265A Method for removing redeposited veils from etched platinum 失效
标题翻译：从蚀刻铂去除再沉积的面纱的方法
公开(公告)号：US6087265A
公开(公告)日：2000-07-11
申请号：US371610
申请日：1999-08-10
申请人： Jeng H. Hwang
发明人： Jeng H. Hwang
IPC分类号： H01L21/302 , C23F4/00 , H01L21/02 , H01L21/3065 , H01L21/3213
CPC分类号： H01L21/02071 , C23F4/00 , H01L21/32136
摘要： A method of etching a platinum electrode layer disposed on a substrate. The method comprises providing a substrate supporting a platinum electrode layer, an insulation layer on the platinum electrode layer, and a resist layer on the insulation layer. A portion of the insulation layer is etched by employing a plasma of an etchant gas to break through and to remove the portion of the insulation layer from the platinum electrode layer to expose part of the platinum electrode layer. The exposed part of the platinum electrode layer is then etched by employing a plasma of an etchant gas comprising argon. The etched platinum electrode layer is subsequently overetched by employing a high density plasma of an etchant gas to remove redeposited veils from the etched platinum electrode layer. The etched platinum electrode layer is employed in a semiconductor device.
摘要翻译：蚀刻设置在基板上的铂电极层的方法。该方法包括提供支撑铂电极层的基板，铂电极层上的绝缘层和绝缘层上的抗蚀剂层。通过使用蚀刻剂气体的等离子体来破坏绝缘层的一部分，以从铂电极层中除去绝缘层的一部分以暴露部分铂电极层。然后通过使用包含氩的蚀刻剂气体的等离子体来蚀刻铂电极层的暴露部分。随后通过使用蚀刻剂气体的高密度等离子体去除蚀刻的铂电极层，以从蚀刻的铂电极层去除再沉积的面纱。蚀刻后的铂电极层用于半导体器件。

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