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21. 发明授权

US08262916B1 Enhanced methods for at least partial in situ release of sacrificial material from cavities or channels and/or sealing of etching holes during fabrication of multi-layer microscale or millimeter-scale complex three-dimensional structures 有权
标题翻译：用于在多层微米级或毫米级复杂三维结构的制造期间至少部分原位释放来自空腔或通道的牺牲材料和/或蚀刻孔的密封的方法
公开(公告)号：US08262916B1
公开(公告)日：2012-09-11
申请号：US12828274
申请日：2010-06-30
申请人： Dennis R. Smalley , Michael S. Lockard , Adam L. Cohen
发明人： Dennis R. Smalley , Michael S. Lockard , Adam L. Cohen
IPC分类号： C23F1/22
CPC分类号： B81C1/00071 , C25D1/003
摘要： Embodiments of the invention are directed to multi-layer, multi-material fabrication methods (e.g. electrochemical fabrication methods) which provide improved versatility in producing complex microdevices and in particular in removing sacrificial material from passages, channels, or cavities that are complex or that include etching access ports in their final configurations that are small relative to passage, channel, or cavity lengths. Embodiments of the present invention provide for removal of sacrificial material from these passages, channels or cavities using one or more initial or preliminary removal steps that occur prior to completion of the such passages that results from the completion of the layer forming steps. In some embodiments, first sacrificial material is replaced after a secondary solid sacrificial material after the initial removal step or steps. In other embodiments, the first sacrificial material is replaced after a liquid material after the initial removal step or steps. In some embodiments, desired structure formation may occur along or separately from one or more etchant directing manifolds that can force etchant into the passages, channels, and cavities.
摘要翻译：本发明的实施例涉及多层，多材料制造方法（例如电化学制造方法），其提供了在复杂微器件生产中提供改进的多功能性，特别是从复杂的通道，通道或腔中去除牺牲材料，蚀刻其相对于通道，通道或腔长度较小的最终构造的进入端口。本发明的实施例提供了从这些通道，通道或空腔中去除牺牲材料，使用在完成层形成步骤后产生的这种通道完成之前发生的一个或多个初始或初步去除步骤。在一些实施例中，在初始移除步骤或步骤之后，在第二固体牺牲材料之后，替换第一牺牲材料。在其它实施例中，在初始移除步骤或步骤之后，在液体材料之后替换第一牺牲材料。在一些实施方案中，期望的结构形成可以沿着或分开地与一个或多个蚀刻剂导向歧管发生，其可以迫使蚀刻剂进入通道，通道和空腔。

22. 发明申请

US20110132767A1 Multi-Layer, Multi-Material Fabrication Methods for Producing Micro-Scale and Millimeter-Scale Devices with Enhanced Electrical and/or Mechanical Properties 有权
标题翻译：用于生产具有增强的电气和/或机械性能的微尺度和毫米级装置的多层，多材料制造方法
公开(公告)号：US20110132767A1
公开(公告)日：2011-06-09
申请号：US12906970
申请日：2010-10-18
申请人： Ming Ting Wu , Rulon Joseph Larsen, III , Young Kim , Kieun Kim , Adam L. Cohen , Ananda H. Kumar , Michael S. Lockard , Dennis R. Smalley
发明人： Ming Ting Wu , Rulon Joseph Larsen, III , Young Kim , Kieun Kim , Adam L. Cohen , Ananda H. Kumar , Michael S. Lockard , Dennis R. Smalley
IPC分类号： C25D5/02 , C25D5/48
CPC分类号： G01R1/06716 , B33Y10/00 , C23C18/1605 , C23C18/1651 , C25D1/003 , G01R1/06744 , G01R1/06755 , G01R3/00 , H01L21/4853
摘要： Some embodiments of the invention are directed to electrochemical fabrication methods for forming structures or devices (e.g. microprobes for use in die level testing of semiconductor devices) from a core material and a shell or coating material that partially coats the surface of the structure. Other embodiments are directed to electrochemical fabrication methods for producing structures or devices (e.g. microprobes) from a core material and a shell or coating material that completely coats the surface of each layer from which the probe is formed including interlayer regions. Additional embodiments of the invention are directed to electrochemical fabrication methods for forming structures or devices (e.g. microprobes) from a core material and a shell or coating material wherein the coating material is located around each layer of the structure without locating the coating material in inter-layer regions. Each of these groups of embodiments incorporate both the core material and the coating material during the formation of each layer and each layer is also formed with a sacrificial material that is removed after formation of all layers of the structure. In some embodiments the core material may be a genuine structural material while in others it may be only a functional structural material (i.e. a material that would be removed with sacrificial material if it were accessible by an etchant during removal of sacrificial material.
摘要翻译：本发明的一些实施方案涉及用于从芯材料和部分涂覆结构表面的壳或涂层材料形成结构或器件（例如用于半导体器件的晶片级测试的微探针）的电化学制造方法。其它实施方案涉及用于从芯材和壳或涂层材料制造结构或器件（例如微探针）的电化学制造方法，其完全涂覆形成探针的每个层的表面，包括中间层区域。本发明的另外的实施方案涉及用于从核心材料和壳或涂层材料形成结构或器件（例如微针）的电化学制造方法，其中涂层材料围绕结构的每一层定位，而不将涂层材料定位在相互之间，层区域。这些实施例组中的每一个在形成每个层期间都包括芯材料和涂层材料，并且每个层还形成有牺牲材料，该牺牲材料在形成所述结构的所有层之后被去除。在一些实施例中，芯材料可以是真正的结构材料，而在其它实施例中，其可以仅是功能性结构材料（即，如果在去除牺牲材料期间可通过蚀刻剂获得牺牲材料，则该材料将被除去。

23. 发明授权

US07830228B2 Miniature RF and microwave components and methods for fabricating such components 有权
标题翻译：微型射频和微波组件以及用于制造这些组件的方法
公开(公告)号：US07830228B2
公开(公告)日：2010-11-09
申请号：US11842947
申请日：2007-08-21
申请人： Elliot R. Brown , John D. Evans , Christopher A. Bang , Adam L. Cohen , Michael S. Lockard , Dennis R. Smalley , Morton Grosser
发明人： Elliot R. Brown , John D. Evans , Christopher A. Bang , Adam L. Cohen , Michael S. Lockard , Dennis R. Smalley , Morton Grosser
IPC分类号： H01P3/06 , H01P3/00
CPC分类号： H01P1/202 , B33Y10/00 , B33Y70/00 , B81B2201/042 , C25D1/003 , G01P15/0802 , G01P15/125 , H01P3/06 , H01P5/183 , H01P11/00 , H01P11/005 , H01P11/007 , H05K3/4647 , Y10T29/49002 , Y10T29/49016 , Y10T29/49018
摘要： RF and microwave radiation directing or controlling components are provided that may be monolithic, that may be formed from a plurality of electrodeposition operations and/or from a plurality of deposited layers of material, that may include switches, inductors, antennae, transmission lines, filters, and/or other active or passive components. Components may include non-radiation-entry and non-radiation-exit channels that are useful in separating sacrificial materials from structural materials. Preferred formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g. selective etching operations and/or back filling operations).
摘要翻译：提供RF和微波辐射引导或控制部件，其可以是单片的，其可以由多个电沉积操作和/或从多个沉积的材料层形成，其可以包括开关，电感器，天线，传输线，滤波器，和/或其他主动或被动部件。部件可以包括用于将牺牲材料与结构材料分离的非辐射入口和非辐射出口通道。优选的形成方法使用电化学制造技术（例如包括选择性沉积，体积沉积，蚀刻操作和平坦化操作）和后沉积工艺（例如选择性蚀刻操作和/或反向填充操作）。

24. 发明申请

US20100276077A1 Mesoscale and Microscale Device Fabrication Methods Using Split Structures and Alignment Elements 失效
标题翻译：中尺度和微尺度装置使用分割结构和对准元件的制造方法
公开(公告)号：US20100276077A1
公开(公告)日：2010-11-04
申请号：US12611795
申请日：2009-11-03
申请人： Adam L. Cohen , Michael S. Lockard , Dennis R. Smalley
发明人： Adam L. Cohen , Michael S. Lockard , Dennis R. Smalley
IPC分类号： B32B38/10 , B32B37/02
CPC分类号： C25D1/003 , B33Y10/00 , B81B2201/042 , B81C1/00293 , B81C1/00333 , B81C2201/0197 , B81C2203/0145 , C25D1/10 , C25D5/022 , G01P15/0802 , G01P15/125 , H01P1/202 , H01P3/06 , H01P5/183 , H01P11/00 , H01P11/005 , H05K3/4647 , Y10T156/10
摘要： Various embodiments of the invention are directed to formation of mesoscale or microscale devices using electrochemical fabrication techniques where structures are formed from a plurality of layers as opened structures which can be folded over or other otherwise combined to form structures of desired configuration. Each layer is formed from at least one structural material and at least one sacrificial material. The initial formation of open structures may facilitate release of the sacrificial material, ability to form fewer layers to complete a structure, ability to locate additional materials into the structure, ability to perform additional processing operations on regions exposed while the structure is open, and/or the ability to form completely encapsulated and possibly hollow structures.
摘要翻译：本发明的各种实施例涉及使用电化学制造技术形成中尺度或微尺寸器件，其中结构由多个层形成为打开的结构，其可折叠或以其他方式组合以形成所需构造的结构。每个层由至少一种结构材料和至少一种牺牲材料形成。开放结构的初始形成可以促进牺牲材料的释放，形成较少层以完成结构的能力，将附加材料定位到结构中的能力，对结构打开时暴露的区域执行附加处理操作的能力和/ 或形成完全封装和可能中空结构的能力。

25. 发明申请

US20100065432A1 Electrochemical Fabrication Process Including Process Monitoring, Making Corrective Action Decisions, and Taking Appropriate Actions 审中-公开
公开(公告)号：US20100065432A1
公开(公告)日：2010-03-18
申请号：US12624257
申请日：2009-11-23
申请人： Adam L. Cohen , Michael S. Lockard , Dennis R. Smalley , Marvin M. Kilgo, III
发明人： Adam L. Cohen , Michael S. Lockard , Dennis R. Smalley , Marvin M. Kilgo, III
IPC分类号： C25D5/02
CPC分类号： C25D1/003 , B81B2201/042 , B81C99/004 , G01P15/0802 , G01P15/125 , H01L21/2885 , H01L21/4857 , H01L21/76879 , H01P1/202 , H01P3/06 , H01P5/183 , H01P11/00 , H01P11/005 , H05K3/241 , H05K3/243 , H05K3/4647
摘要： Electrochemical fabrication processes and apparatus for producing multi-layer structures include operations or means for providing enhanced monitoring of build operations or detection of the results of build operations, operations or means for build problem recognition, operations or means for evaluation of corrective action options, operations or means for making corrective action decisions, and operations or means for executing actions based on those decisions.

26. 发明申请

US20090068460A1 Multi-Layer Three-Dimensional Structures Having Features Smaller Than a Minimum Feature Size Associated With the Formation of Individual Layers 审中-公开
标题翻译：具有小于单个层的形成的最小特征尺寸的特征的多层三维结构
公开(公告)号：US20090068460A1
公开(公告)日：2009-03-12
申请号：US12203094
申请日：2008-09-02
申请人： Michael S. Lockard , Adam L. Cohen , Vacit Arat , Dennis R. Smalley
发明人： Michael S. Lockard , Adam L. Cohen , Vacit Arat , Dennis R. Smalley
IPC分类号： B32B5/00
CPC分类号： C25D1/08 , B33Y70/00 , C25D1/003 , C25D5/022 , C25D5/10 , Y10T137/86759 , Y10T428/12361 , Y10T428/12479 , Y10T428/19 , Y10T428/24975 , Y10T428/249981 , Y10T428/29
摘要： Embodiments of multi-layer three-dimensional structures and formation methods provide structures with effective feature (e.g. opening) sizes (e.g. virtual gaps) that are smaller than a minimum feature size (MFS) that exists on each layer as a result of the formation method used in forming the structures. In some embodiments, multi-layer structures include a first element (e.g. first patterned layer with a gap) and a second element (e.g. second patterned layer with a gap) positioned adjacent the first element to define a third element (e.g. a net gap or opening resulting from the combined gaps of the first and second elements) where the first and second elements have features that are sized at least as large as the minimum feature size and the third element, at least in part, has dimensions or defines dimensions smaller than the minimum feature size.
摘要翻译：多层三维结构和形成方法的实施例提供结构，其具有小于作为形成方法的结果存在于每个层上的最小特征尺寸（MFS）的有效特征（例如开口）尺寸（例如，虚拟间隙）用于形成结构。在一些实施例中，多层结构包括第一元件（例如具有间隙的第一图案化层）和邻近第一元件定位的第二元件（例如具有间隙的第二图案化层），以限定第三元件（例如，净间隙或第一和第二元件的组合间隙产生的开口），其中第一和第二元件具有尺寸至少与最小特征尺寸一样大的特征，并且第三元件至少部分具有尺寸或尺寸小于最小特征尺寸。

27. 发明授权

US07498714B2 Multi-layer three-dimensional structures having features smaller than a minimum feature size associated with the formation of individual layers 有权
标题翻译：具有小于与单独层的形成相关联的最小特征尺寸的特征的多层三维结构
公开(公告)号：US07498714B2
公开(公告)日：2009-03-03
申请号：US10949744
申请日：2004-09-24
申请人： Michael S. Lockard , Adam L. Cohen , Vacit Arat , Dennis R. Smalley
发明人： Michael S. Lockard , Adam L. Cohen , Vacit Arat , Dennis R. Smalley
IPC分类号： H02N1/00 , F16K31/02
CPC分类号： C25D1/08 , B33Y70/00 , C25D1/003 , C25D5/022 , C25D5/10 , Y10T137/86759 , Y10T428/12361 , Y10T428/12479 , Y10T428/19 , Y10T428/24975 , Y10T428/249981 , Y10T428/29
摘要： Embodiments of multi-layer three-dimensional structures and formation methods provide structures with effective feature (e.g. opening) sizes (e.g. virtual gaps) that are smaller than a minimum feature size (MFS) that exists on each layer as a result of the formation method used in forming the structures. In some embodiments, multi-layer structures include a first element (e.g. first patterned layer with a gap) and a second element (e.g. second patterned layer with a gap) positioned adjacent the first element to define a third element (e.g. a net gap or opening resulting from the combined gaps of the first and second elements) where the first and second elements have features that are sized at least as large as the minimum feature size and the third element, at least in part, has dimensions or defines dimensions smaller than the minimum feature size.
摘要翻译：多层三维结构和形成方法的实施例提供结构，其具有小于作为形成方法的结果存在于每个层上的最小特征尺寸（MFS）的有效特征（例如开口）尺寸（例如，虚拟间隙）用于形成结构。在一些实施例中，多层结构包括第一元件（例如具有间隙的第一图案化层）和邻近第一元件定位的第二元件（例如具有间隙的第二图案化层），以限定第三元件（例如，净间隙或第一和第二元件的组合间隙产生的开口），其中第一和第二元件具有尺寸至少与最小特征尺寸一样大的特征，并且第三元件至少部分具有尺寸或尺寸小于最小特征尺寸。

28. 发明授权

US07488686B2 Electrochemical fabrication methods including use of surface treatments to reduce overplating and/or planarization during formation of multi-layer three-dimensional structures 有权
标题翻译：电化学制造方法包括在形成多层三维结构期间使用表面处理来减少过度平坦化和/或平坦化
公开(公告)号：US07488686B2
公开(公告)日：2009-02-10
申请号：US11523206
申请日：2006-09-19
申请人： Adam L. Cohen , Dennis R. Smalley , Michael S. Lockard , Qui T. Le
发明人： Adam L. Cohen , Dennis R. Smalley , Michael S. Lockard , Qui T. Le
IPC分类号： H01L21/311
CPC分类号： H01L21/288 , B33Y10/00 , C23C18/1605 , C25D5/022 , C25D5/10 , H01L21/311 , H01L21/7682 , H01L21/76879
摘要： A method of fabricating three-dimensional structures from a plurality of adhered layers of at least a first and a second material wherein the first material is a conductive material and wherein each of a plurality of layers includes treating a surface of a first material prior to deposition of the second material. The treatment of the surface of the first material either (1) decreases the susceptibility of deposition of the second material onto the surface of the first material or (2) eases or quickens the removal of any second material deposited on the treated surface of the first material. In some embodiments the treatment of the first surface includes forming a dielectric coating over the surface and the second material is electrodeposited (e.g. using an electroplating or electrophoretic process). In other embodiments the first material is coated with a conductive material that doesn't readily accept deposits of electroplated or electroless deposited materials.
摘要翻译：从至少第一和第二材料的多个粘附层制造三维结构的方法，其中所述第一材料是导电材料，并且其中多个层中的每一个包括在沉积之前处理第一材料的表面的第二种材料。第一材料的表面的处理（1）降低了将第二材料沉积到第一材料的表面上的敏感性，或（2）减轻或加快了沉积在第一材料的处理表面上的任何第二材料的去除材料。在一些实施例中，第一表面的处理包括在表面上形成电介质涂层，并且第二材料被电沉积（例如使用电镀或电泳工艺）。在其它实施例中，第一材料涂覆有不容易接受电镀或无电沉积材料沉积物的导电材料。

29. 发明申请

US20090020433A1 Electrochemical Fabrication Methods for Producing Multilayer Structures Including the use of Diamond Machining in the Planarization of Deposits of Material 审中-公开
标题翻译：用于生产多层结构的电化学制造方法包括在材料沉积物平面化中使用金刚石加工
公开(公告)号：US20090020433A1
公开(公告)日：2009-01-22
申请号：US12121625
申请日：2008-05-15
申请人： Adam L. Cohen , Uri Frodis , Michael S. Lockard , Ananda H. Kumar , Gang Zhang , Dennis R. Smalley
发明人： Adam L. Cohen , Uri Frodis , Michael S. Lockard , Ananda H. Kumar , Gang Zhang , Dennis R. Smalley
IPC分类号： C25D5/48
CPC分类号： C25D1/003 , B81C1/00492 , B81C99/0065 , B81C2201/0104 , B81C2201/0197 , C25D5/02 , C25D5/022 , C25D5/10 , C25D21/12 , H01L21/2885 , H01L21/76885
摘要： Electrochemical fabrication methods for forming single and multilayer mesoscale and microscale structures are disclosed which include the use of diamond machining (e.g. fly cutting or turning) to planarize layers. Some embodiments focus on systems of sacrificial and structural materials which are useful in Electrochemical fabrication and which can be diamond machined with minimal tool wear (e.g. Ni—P and Cu, Au and Cu, Cu and Sn, Au and Cu, Au and Sn, and Au and Sn—Pb), where the first material or materials are the structural materials and the second is the sacrificial material). Some embodiments focus on methods for reducing tool wear when using diamond machining to planarize structures being electrochemically fabricated using difficult-to-machine materials (e.g. by depositing difficult to machine material selectively and potentially with little excess plating thickness, and/or pre-machining depositions to within a small increment of desired surface level (e.g. using lapping or a rough cutting operation) and then using diamond fly cutting to complete he process, and/or forming structures or portions of structures from thin walled regions of hard-to-machine material as opposed to wide solid regions of structural material.
摘要翻译：公开了用于形成单层和多层中尺度和微结构的电化学制造方法，其包括使用金刚石加工（例如飞切或车削）来平坦化层。一些实施例集中于可用于电化学制造的牺牲和结构材料的系统，并且可以以最小的工具磨损（例如Ni-P和Cu，Au和Cu，Cu和Sn，Au和Cu，Au和Sn，和Au和Sn-Pb），其中第一材料或材料是结构材料，第二材料是牺牲材料）。一些实施例着重于在使用金刚石加工来平面化使用难以加工的材料进行电化学制造的结构（例如，通过沉积难以加工材料选择性且潜在地具有少量多余电镀厚度和/或预加工沉积到所需表面水平的小增量（例如使用研磨或粗切割操作），然后使用金刚石飞切切割来完成其加工，和/或从硬质材料的薄壁区域形成结构或部分结构而不是结构材料的宽固体区域。

30. 发明申请

US20080121343A1 Electrochemical Fabrication Methods Incorporating Dielectric Materials and/or Using Dielectric Substrates 审中-公开
标题翻译：电介质材料和/或使用介质基片的电化学制造方法
公开(公告)号：US20080121343A1
公开(公告)日：2008-05-29
申请号：US12015374
申请日：2008-01-16
申请人： Adam L. Cohen , Michael S. Lockard , Kieun Kim , Qui T. Le , Gang Zhang , Uri Frodis , Dale S. McPherson , Dennis R. Smalley
发明人： Adam L. Cohen , Michael S. Lockard , Kieun Kim , Qui T. Le , Gang Zhang , Uri Frodis , Dale S. McPherson , Dennis R. Smalley
IPC分类号： B32B38/10
CPC分类号： C25D5/022 , B81C1/00126 , B81C2201/0109 , B81C2201/019 , C23C18/1605 , C23C18/1651 , C25D1/003 , Y10T156/11 , Y10T156/19
摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.
摘要翻译：本发明的一些实施例涉及在电介质或部分电介质基底上建立单层或多层结构的技术。某些实施方案将种子层材料直接沉积到基底材料上，而其它实施例使用中间粘合层材料。一些实施例使用不同种子层材料和/或用于牺牲和结构导电建筑材料的粘合层材料。一些实施例将种子层和/或粘合层材料应用于有选择性的方式，而其它实施例以毯子的方式应用材料。一些实施例通过平面化操作去除外来沉积物（例如沉积到不想要形成层的一部分的区域），而其他实施例通过蚀刻操作去除外来材料。其它实施方案涉及使用至少一种导电结构材料，至少一种导电牺牲材料和至少一种电介质材料形成的多层中尺度或微结构结构的电化学制造。在一些实施方案中，电介质材料是可UV固化的光聚合物。

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