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21. 发明专利

JPH08180824A ELECTRON BEAM SOURCE, MANUFACTURE THEREOF, ELECTRON BEAM SOURCE APPARATUS AND ELECTRON BEAM APPARATUS USING THEREOF 失效
公开(公告)号：JPH08180824A
公开(公告)日：1996-07-12
申请号：JP32018894
申请日：1994-12-22
申请人： HITACHI LTD
发明人： OSHIMA TAKU , SHINADA HIROYUKI , KURODA KATSUHIRO
IPC分类号： H01J1/304 , H01J1/308 , H01J9/02 , H01J37/073 , H01J1/30
摘要： PURPOSE: To provide an electron beam source which can generate electron beam of a unicolor and high brightness. CONSTITUTION: An electron forming means, e.g. a doped Si layer 2, to generate electrons in a conduction band is formed near the tip surface of a needle like structure 1 having a sharp tip part and made of a substance at least the surface of which is a semiconductor single crystal or single crystal insulating substance. It is preferable to form a surface passivation layer 4 on the surface of the needle-like structure 1. Furthermore, a means to excite electrons in a valence electron band may be formed instead of the doped Si layer 2.

22. 发明专利

JPH07296755A ELECTRON BEAM SOURCE, AND ELECTRON BEAM APPLYING DEVICE USING IT 失效
公开(公告)号：JPH07296755A
公开(公告)日：1995-11-10
申请号：JP8817994
申请日：1994-04-26
申请人： HITACHI LTD
发明人： OSHIMA TAKU , KURODA KATSUHIRO , SHINADA HIROYUKI
IPC分类号： H01J37/073 , H01J1/30 , H01J1/304 , H01J37/305
摘要： PURPOSE:To precisely select one electron emitting source from a plurality of electron emitting sources formed on base. CONSTITUTION:An electron beam source has a plurality of electron emitting sources 19 formed on a base 10, a drawing electrode 11 having a top end formed in a protruding form toward one of the electron emitting sources 19 and an opening part for passing the electron beam, and a moving means for relatively moving the base 10 and the drawing electrodes 11. Thus, one electron emitting source can be precisely selected from a plurality of electron emitting sources, a plurality of electron emitting sources can be used in an electron beam applied device such as a SEM or electron beam drawing device operated only by one electron beam, and, further, even an electron emitting source having a short life can be used as a long-lived electron beam source.

23. 发明专利

JPH0794103A METAL-INSULATOR-METAL TYPE ELECTRON EMITTING ELEMENT AND METHOD TO DRIVE APPLICATION EQUIPMENT SUCH AS ELECTRON BEAM EMITTER USING SAME 失效
公开(公告)号：JPH0794103A
公开(公告)日：1995-04-07
申请号：JP23781793
申请日：1993-09-24
申请人： HITACHI LTD
发明人： KUSUNOKI TOSHIAKI , SUZUKI MUTSUZOU , SASAKI SUSUMU , YAGUCHI TOMIO , KURODA KATSUHIRO , SHINADA HIROYUKI , OSHIMA TAKU , OSHIMA TETSUYA , HAYASHI NOBUAKI
IPC分类号： H01J37/073 , H01J1/312 , H01J19/06 , H01J37/305
摘要： PURPOSE:To allow the repeatable use of electron beam with low noise and uniform surface distribution by cutting off drive voltage at a speed which prohibits the development of a forming condition when finishing the drive of an electron emitting element. CONSTITUTION:A metal-insulator-metal structure is of an Al-Al2O32-Au type, Al on the upper part 11 and Au on a lower electrode 13 are made up with spattering and Al2O3 on an insulation layer 12 is made up with low-current anode oxidation. In this way, an Al2O3 film of good insulation property can be formed. When the drive of an electron emitting element is finished, drive voltage 14 is momently cut off, so that the cut-off can be completed prior to the occurrence of a forming condition, or a conductive path. As a result, even if the voltage 14 is applied again to the element, the memory effect of the element prohibits the development of the forming condition allows the repeatable use of electron beam with low noise and uniform distribution on the electron emission surface.

24. 发明专利

JPH0721953A ELECTRON BEAM SOURCE, ELECTRON BEAM APPLIANCE AND ELECTRON DEVICE USING THIS ELECTRON BEAM SOURCE 失效
公开(公告)号：JPH0721953A
公开(公告)日：1995-01-24
申请号：JP16162193
申请日：1993-06-30
申请人： HITACHI LTD
发明人： OSHIMA TAKU , KURODA KATSUHIRO , MORI MITSUHIRO , NAKAGAWA KIYOKAZU , MISHIMA TOMOYOSHI , HIRUMA TAKEYUKI , OKAMOTO MASAKUNI , MIYAO MASANOBU
IPC分类号： H01J1/30 , H01J1/304 , H01J37/073 , H01J49/08
摘要： PURPOSE:To generate electron beams with narrow energy width by stacking at least pair of second material and third material in order on the surface of a first material which is a conductor, and allying negative voltage to a facing anode to them. CONSTITUTION:A barrier layer 12 and a quantum well layer 13 whose thicknesses are the penetration length or less of an electron wave are placed on the surface of a conductor needle 11, and negative voltage against a facing electrode is applied to generate electron beams. For example, the needle 11 of an n type GaAs single crystal is used as a test piece and the first material and the film 12 of an AlAs single crystal as the second material is grown at the tip of the needle 11, then the film 13 of a GaAS single crystal as the third material is grown on the film 12. They are put in a vacuum box, and the surface is cleaned by heating, then negative voltage against the facing electrode is applied to increase electrons by tunnel release. An electron beam source which releases electron beams with extremely narrow energy width is provided. Electron microscopes with high resolution and electron spectroscopes with high performance are produced.

25. 发明专利

JPH0685317A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0685317A
公开(公告)日：1994-03-25
申请号：JP23686092
申请日：1992-09-04
申请人： HITACHI LTD
发明人： NAKAGAWA KIYOKAZU , NISHIDA AKIO , OSHIMA TAKU , SHIMADA JUICHI
IPC分类号： H01L33/06 , H01L33/20 , H01L33/34 , H01L33/36 , H01S5/00 , H01L33/00 , H01S3/18
摘要： PURPOSE:To provide a light emitting element which has the quantum fine line structure using SiGe of a group N semiconductor. CONSTITUTION:Multilayer structure referring to an n-type Si0.5Ge0.5 layer 13, 100Angstrom across, an Si0.7Ge0.3 layer 14, 50Angstrom , an Si0.3Ge0.7 layer 15, 50Angstrom ,..., a p-type Si0.5Ge0.5 layer 16, 100Angstrom each in the shape of a fine 100Angstrom across in size is made on an n-type Si substrate 11, and a quantum box is formed by the fine line structure and heterostructure, and a light emitting element is made possible using a group N semiconductor. This provides the element structure which makes a light emitting element possible, using the group N semiconductor which has been impossible to form a light emitting element conventionally.

26. 发明专利

JPH03187214A MANUFACTURE OF SEMICONDUCTOR CRYSTAL 失效
公开(公告)号：JPH03187214A
公开(公告)日：1991-08-15
申请号：JP32596289
申请日：1989-12-18
申请人： HITACHI LTD
发明人： NAKAMURA NOBUO , OSHIMA TAKU , NAKAGAWA KIYOKAZU , MIYAO MASANOBU , MURAKAMI HIDEKAZU , ETO HIROYUKI
IPC分类号： H01L21/20 , C23C14/04 , H01L21/203 , H01L29/80
摘要： PURPOSE:To acquire optimum planar orientation when silicon compound is made to grow selectively by orientation by selecting (110)-plane which is exposed by etching when irregular etching is carried out using an Si substrate. CONSTITUTION:A method has a process to process an Si substrate having a (111)-plane to expose other crystal planar orientation, a process to expose a part or an entire of a substrate surface completely by heating it in super high vacuum, and a process to evaporate Si and metal simultaneously or alternately within 10atom layers. In this case, a crystal plane which is exposed by processing is mainly made (110)-plane. Thereby, it is possible to selectively form metal and a silicon compound by planar orientation and to enable easy fine processing of metal and silicide which is hard to be dry-etched.

27. 发明专利

JPH01283925A ELEMENT FORMING METHOD 失效
公开(公告)号：JPH01283925A
公开(公告)日：1989-11-15
申请号：JP11242288
申请日：1988-05-11
申请人： HITACHI LTD
发明人： FUKUDA HIROSHI , TERASAWA TSUNEO , HASEGAWA NORIO , TANAKA TOSHIHIKO , OSHIMA TAKU
IPC分类号： G03F7/20 , G03F1/00 , G03F1/30 , G03F1/68 , H01L21/027 , H01L21/30
摘要： PURPOSE:To obtain minute elements characterized by a simple constitution and large throughputs in the formation of a disk pattern having a very minute pattern, by using a phase shifting mask which imparts the phase difference to neighboring light with respect to the exposure of the very minute pattern, and using a transmitting type mask for the other pattern region. CONSTITUTION:A phase shifting mask is used for the exposure of the very minute pattern of a device, and an ordinary transmitting type mask is used for the exposure of the other pattern. Thus the reduced projection exposure is performed. Namely, the patterns of the object device are divided into two regions; i.e., the closely assembled region of the very minute patterns each having a simple repeating structure and the circuit regions such as control electrodes and wirings having a relatively complicated structure. The shape of the very minute pattern region is relatively simple, and the patterns in this region can be formed by using the reduced projection exposure method using the phase shift mask. Meanwhile, the size of the pattern in the circuit region is larger than the very minute pattern. It is suitable that this pattern is formed by the reduced projection exposure method using the transmitting type mask.

28. 发明专利

JP2000223052A ELECTRON BEAM GENERATING DEVICE 失效
公开(公告)号：JP2000223052A
公开(公告)日：2000-08-11
申请号：JP1945499
申请日：1999-01-28
申请人： HITACHI LTD
发明人： OSHIMA TAKU , SAITO NORIO
IPC分类号： H01J37/073 , G03F7/20 , H01J1/34 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To restrain degradation of an emitting surface due to electron emission and to extend the service life by moving a photo-cathode orthogonally to an optical axis of an excited light during electron emission. SOLUTION: A photo-cathode 1 is connected with a motor 9 at a rotation axis 8, and rotates at a rotation speed ω during electron emission. The rotation axis 8 is kept in parallel with an optical axis 13 within ±1 deg.. The rotation speed ω is determined almost from degradation speed D (1/hour) and rotation radius (distance between the rotation axis 8 and the optical axis 13) R, current variation can be restrained small when it is used at ω>>D/R. When it is used near ω=D/R, the life expires exactly at one rotation. Light radiation amount per unit area can be reduced, and the life is about 4 R/r times longer than that when the photo-cathode is not moved. Therefore, when convergence light is a spot of 780 nm wavelength and r=1 μm, the life is 40000 times longer at R=2 cm.

29. 发明专利

JP2000173528A SCANNING ELECTRON MICROSCOPE 失效
公开(公告)号：JP2000173528A
公开(公告)日：2000-06-23
申请号：JP34645198
申请日：1998-12-07
申请人： HITACHI LTD
发明人： OSHIMA TAKU , TAKATO ATSUKO , HIRANUMA MASAYUKI , KANDA KIMIO , OTAKA TADASHI , IIIZUMI TAKASHI
IPC分类号： H01J37/244 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To observe and measure highly accurately at high resolution by observing the surface potential of the observation surface of a sample, by monitoring the change in an image thereby, by sending and displaying the electrification phenomena, and by taking a measure based on the obtained electrification information. SOLUTION: A surface potential observation means for a scanning electron microscope may be a means for analyzing the energy of a secondary electron, observing the deviation in the focal point between a height sensor and an electron beam, or changing the potential of the sample. A monitor means may be a means for converting the contract of an image per each hour into a numerical number, arranging and comparing each instances by the cache memory of the image, or monitoring the changes in the brightness of the image. For example, out of the brightness distribution of each pixel of the nth frame, an average value n and the deviation value σn are converted into a numerical value as the brightness and the contrast of the nth frame so as to obtain the changes in the frames. The presence of a pattern in the observation range enables detection.

30. 发明专利

JPH1031955A MANUFACTURE OF THERMAL DIFFUSION SUPPLY TYPE ELECTRON SOURCE, AND ELECTRON BEAM APPLIED DEVICE USING THE ELECTRON SOURCE 失效
公开(公告)号：JPH1031955A
公开(公告)日：1998-02-03
申请号：JP18720896
申请日：1996-07-17
申请人： HITACHI LTD
发明人： NISHIYAMA HIDETOSHI , SHINADA HIROYUKI , OSHIMA TAKU , KURODA KATSUHIRO
IPC分类号： H01J9/02 , H01J37/073 , H01J37/147
摘要： PROBLEM TO BE SOLVED: To monochromate an emitted electron energy by using a thermal diffusion supply type electron source capable of being set at an operation temperature lower than that of an electron source Zr/O/W. SOLUTION: To the tip of a W-made heating element 1 formed in V-shape is spot-welded W monocrystal, and the tip is sharply tapered to form a needle electrode 2. It is then heated in vacuum, whereby the tip radius is set at 1.2μm. The resulting electrode is taken out to the atmosphere, a supply source 3 is adhered close to the base part of the needle electrode to manufacture a thermal diffusion supply type electron source 4. This electron source 4 is loaded on an energy analyzing device. A suppresser electrode 5 is put on the thermal diffusion supply type electron source 4, and an anode 6 is set in a position opposed thereto. The electron source 4 is electrically heated by a heating power source 8. The energy distribution of the emitted electron is measured by an energy analyzer 7. The electron emitting passage of this device is evacuated, the heating element 1 is heated to provide the emitted electron, and the emitted electron is put in the energy analyzer 7 for measurement.

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