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1. 发明专利

JPH10261559A MANUFACTURE OF SEMICONDUCTOR DEVICE AND ALIGNER 失效
公开(公告)号：JPH10261559A
公开(公告)日：1998-09-29
申请号：JP6339397
申请日：1997-03-17
申请人： HITACHI LTD , HITACHI CHIYOU LSI SYS KK
发明人： ARAKI MASAMI , NAKANO TAKASHI , HIRANUMA MASAYUKI , MINAGAWA MASARU
IPC分类号： H01L21/027 , G03F7/20 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To inexpensively and quickly form an identification information pattern such as numbering in a semiconductor wafer. SOLUTION: With a plurality of numeric patterns and alphabetical patterns 63 that are formed at an exclusive numbering reticle 60 being provided separately from a reticle 40 for circuit pattern, an arbitrary alphabetical pattern 63 is selectively exposed for an exposure beam 51 that is emitted from an exposure light source optical system 50 by a transmission window region 70 where size/ position are variable being composed of a plurality of movable light-shielding blades 71, movable light-shielding blades 72 and movable light-shielding blades 81, and movable light-shielding blades 82. A desired identification information pattern 90 is formed at an arbitrary position (an identification information formation region 13) of a semiconductor wafer 10 by repeating an operation for exposing one alphabetical pattern 63 onto an XY table 20 via a projection optical system 30 for the number of rows of characters required for constituting an identification information pattern 90.

2. 发明专利

JPH05142747A PRODUCTION OF PHOTOMASK 失效
公开(公告)号：JPH05142747A
公开(公告)日：1993-06-11
申请号：JP30433491
申请日：1991-11-20
申请人： HITACHI LTD
发明人： HIRANUMA MASAYUKI , SUGA OSAMU , SAITO HIDETAKA , KUNIYOSHI SHINJI , KOBAYASHI MASAMICHI
IPC分类号： G03F1/30 , G03F1/40 , G03F1/68 , H01L21/027
摘要： PURPOSE:To improve the production yield of the photomask for phase shift and to shorten the time for producing the photomask for phase shift. CONSTITUTION:A transparent film 4 to constitute a phase shifter material is deposited over the entire surface of the 1st photomask P1 to be formed with phase shifters and thereafter, phase shift patterns 3 consisting of a light shielding film formed on the 2nd photomask P2 are transferred onto the 1st photomask P1 by using a light exposing technique and the phase shifters are formed on the 1st photomask P1 by processing the transparent film 4.

3. 发明专利

JPH04188753A MULTILAYER INTERCONNECTION SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04188753A
公开(公告)日：1992-07-07
申请号：JP31611990
申请日：1990-11-22
申请人： HITACHI LTD
发明人： HIRANUMA MASAYUKI
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/522
摘要： PURPOSE:To prevent the increase of the connecting resistance of upper and lower wirings and the deterioration of reliability by boring one part of a connecting hole extending over a sidewall section from the stepped section of the wiring of a lower layer and conducting electrical connection through the sidewall section. CONSTITUTION:A multilayer interconnection semiconductor device is composed of a foundation- wiring inter-layer insulating film 1, a lower wiring 2, a conductor 3, an inter-layer insulating film 4, an upper wiring 5, a final protective film 6 and a connecting hole 7. One part of the connecting hole 7 is extended over a sidewall section from the stepped section of the lower layer wiring 2, and connected electrically through the sidewall section. Consequently, one part of the connecting hole 7 is extended over the sidewall section from the stepped section of the wiring 2, thus displaying the area of a surface spread in the vertical direction in the connecting hole 7 as the product of length in the horizontal direction, the diameter of the connecting hole 7, and length in the vertical direction, the height of the sidewall section exposed. The height of the sidewall section does not depend upon the diameter of the connecting hole 7. Consequently, even when the diameter of the connecting hole 7, the width of the wiring 2, is reduced, a contact area in the vertical direction is not diminished when the height of the sidewall section exposed in the reduction section is increased. Accordingly, the augmentation of the connecting resistance of the upper and lower wirings and the deterioration of reliability can be prevented.

4. 发明专利

JPH01243552A MULTILAYER INTERCONNECTION STRUCTURE 失效
公开(公告)号：JPH01243552A
公开(公告)日：1989-09-28
申请号：JP6945788
申请日：1988-03-25
申请人： HITACHI LTD
发明人： HIRANUMA MASAYUKI
IPC分类号： H01L23/522 , H01L21/768
摘要： PURPOSE:To reduce a defective connection at a stepped part of Al by a method wherein positions of holes in adjacent rows are staggered and a distance between connection holes is expanded to more than a certain degree in order to prevent a stress from being concentrated on an interlayer film at a part between the connection holes. CONSTITUTION:A first-layer interconnection 1 and a second-layer interconnection 2 via an interlayer insulating film 5 are formed on a substrate. The interconnection 1 and the interconnection 2 are connected through many connection holes 3 made to be adjacent to each other in the insulating film at their crossing part. The connection holes 3 are arranged in rows lengthwise and breadthwise; the connection holes in a second row are made by being staggered with reference to the connection holes in a first row. Then, a concentration of a stress on the insulating film 5 at a part between the connection holes 3 is reduced. By this setup, a defective connection at a stepped part of Al can be reduced.

5. 发明专利

JP2005191017A Scanning electron microscope 审中-公开
标题翻译：扫描电子显微镜
公开(公告)号：JP2005191017A
公开(公告)日：2005-07-14
申请号：JP2005087469
申请日：2005-03-25
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： OSHIMA TAKU , TAKATO ATSUKO , HIRANUMA MASAYUKI , KANDA KIMIO , OTAKA TADASHI , IIIZUMI TAKASHI
IPC分类号： H01J37/20 , H01J37/22 , H01J37/244 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To enable high precision and high resolving power observation in a short time without expertise even toward an easily electrified testpiece by having a function to sense and report an electrification phenomenon causing precision deterioration or resolving power lowering and by simplifying a countermeasure against electrification.
SOLUTION: A scanning electron microscope senses the electrification phenomenon with a surface potential observing measure of an observed sphere of the testpiece or with a monitoring measure of the image change by that, and has a display measure of that effect. The countermeasure against electrification is actuated on the basis of the observed effect of the surface potential, the monitored effect of the image, or sorting items of those effects.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过具有感测和报告导致精度劣化或分解功率降低的通电现象的功能，能够在短时间内无需专门技术来实现高精度和高分辨率的观察，即使是易于带电的试样，电气化的对策。解决方案：扫描电子显微镜利用被测试物体的观察球体的表面电位观察测量值或通过图像变化的监视度量来感测通电现象，并具有该效果的显示度量。基于观察到的表面电位效应，图像的监视效果或者这些效果的排序项目来启动对抗电气的对策。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2001015712A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JP2001015712A
公开(公告)日：2001-01-19
申请号：JP18745099
申请日：1999-07-01
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： FURUKAWA RYOICHI , SUKO KAZUYUKI , HIRANUMA MASAYUKI , SAITO KOICHI , YAMAMOTO HIROHIKO , YOSHIDA MASAYOSHI , ISHIZAKA MASAYUKI , SHIMODA MASAKI
IPC分类号： H01L21/8242 , H01L21/00 , H01L21/02 , H01L21/4763 , H01L21/60 , H01L21/768 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a conductive layer in the inside of the channel formed at an insulating film. SOLUTION: An amorphous silicon film 26A is deposited inside a channel 25 formed at a silicon oxide film 24, and a photoresist film 30 is spin-coated at the upper part of the amorphous silicon film 26A. Then the entire surface of the photoresist film 30 is irradiated with a light, so that the photoresist film 30 outside of the channel 25 is exposed. Here, a photoresist film 30 inside the channel 25 will not be exposed due to lack of exposure amount. The photoresist film 30 is developed to remove a photoresist film 30, which is outside the channel 25 being an exposure part, and then a photoresist film 30 which remains inside the channel 25 and not yet exposed is used as a mask for dry- etching to remove an amorphous silicon film 26A outside the channel 25.

7. 发明专利

JP2000173528A SCANNING ELECTRON MICROSCOPE 失效
公开(公告)号：JP2000173528A
公开(公告)日：2000-06-23
申请号：JP34645198
申请日：1998-12-07
申请人： HITACHI LTD
发明人： OSHIMA TAKU , TAKATO ATSUKO , HIRANUMA MASAYUKI , KANDA KIMIO , OTAKA TADASHI , IIIZUMI TAKASHI
IPC分类号： H01J37/244 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To observe and measure highly accurately at high resolution by observing the surface potential of the observation surface of a sample, by monitoring the change in an image thereby, by sending and displaying the electrification phenomena, and by taking a measure based on the obtained electrification information. SOLUTION: A surface potential observation means for a scanning electron microscope may be a means for analyzing the energy of a secondary electron, observing the deviation in the focal point between a height sensor and an electron beam, or changing the potential of the sample. A monitor means may be a means for converting the contract of an image per each hour into a numerical number, arranging and comparing each instances by the cache memory of the image, or monitoring the changes in the brightness of the image. For example, out of the brightness distribution of each pixel of the nth frame, an average value n and the deviation value σn are converted into a numerical value as the brightness and the contrast of the nth frame so as to obtain the changes in the frames. The presence of a pattern in the observation range enables detection.

8. 发明专利

JPH10312958A FABRICATION OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH10312958A
公开(公告)日：1998-11-24
申请号：JP13758697
申请日：1997-05-13
申请人： HITACHI LTD , TEXAS INSTRUMENTS JAPAN
发明人： HASEGAWA NORIO , KATO TAKESHI , HIRANUMA MASAYUKI , TERASAWA TSUNEO , NISHIMURA MICHIO , SAKAI TAKESHI , HONMA YASUHIRO
IPC分类号： G03F1/42 , G03F1/44 , G03F9/00 , H01L21/027 , H01L21/66 , H01L21/8242 , H01L27/108 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To avoid the effect of misalignment due to coma in a process where normal illumination is mixed with modified illumination by using the normal illumination or the modified illumination, respectively, when a photomask having an inspection mark for normal illumination or modified illumination is exposed to a semiconductor wafer. SOLUTION: Alignment inspection marks corresponding to ring band illumination are arranged at four corners of a mask corresponding to ring band illumination. The inspection mark for ring band illumination serves as an alignment inspection mark for forming an active region 34, a word line 31 and a data line 32, respectively. Alignment inspection marks corresponding to normal illumination are arranged at four corners of a mask corresponding to normal illumination. The inspection mark for normal illumination serves as an alignment inspection mark for forming an opening and a plug electrode 35, respectively. The ring band illumination is used for exposure of the active region 34, the word line 31 and the data line 32 while the normal illumination is used for exposure of the opening and the plug electrode 35.

9. 发明专利

JPH05232677A 失效
公开(公告)号：JPH05232677A
公开(公告)日：1993-09-10
申请号：JP3303792
申请日：1992-02-20
申请人： HITACHI LTD
发明人： HIRANUMA MASAYUKI , SUGA OSAMU
IPC分类号： G03F1/30 , G03F1/68 , H01L21/027 , G03F1/08
摘要： PURPOSE:To reduce the number of processes required to produce a photomask for phase shift with a sub-shifter and to enhance the yield of product, of such photomasks. CONSTITUTION:A two-layered film consisting of a silicon nitride film 4a and a silicon oxide film 4b is formed on a glass substrate 2 with a formed light shielding pattern 3a-3c and phase shifters 4 are formed by anisotropic etching of the two-layered film. Only the silicon nitride film 4a exposed to the side walls of the phase shifters 4 is then removed by selective side etching. Sub- shifter regions 5 made of only the silicon oxide film 4a are self-matchably formed at the peripheries of the phase shifters 4 and the objective photomask 1 for phase shift is produced.

10. 发明专利

JPH07153660A FOCAL-POSITION CORRECTION METHOD AND PROJECTION ALIGNER 失效
公开(公告)号：JPH07153660A
公开(公告)日：1995-06-16
申请号：JP29878593
申请日：1993-11-30
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： TADAKUMA KUNIAKI , KATO TAKESHI , KOMORIYA SUSUMU , HIRANUMA MASAYUKI
IPC分类号： G03F7/207 , G03F7/20 , G03F9/00 , H01L21/027
摘要： PURPOSE:To detect a change in a focal position without being affected by a change in the brightness of a light source by a method wherein a first optical system whose quantity of detection light from the light source is changed according to the change in the focal position is installed, a second optical system whose quantity of detection light from the light source is not affected by a change in the focal position is installed and the ratio regarding the quantity of detection light of the first optical system to the second optical system is found. CONSTITUTION:When the brightness of a light source 4 is designated as I, signal levels detected when light has been transmitted through a fiducial mark 12 at a transmittance of k1 and a reference fiducial mark 15 at a transmittance of k2 and when it has been incident individually on a calibration sensor 13 and a reference sensor 16 are respectively k1XI and k2XI. Then, a calibration signal is obtained in an arithmetic circuit. That is to say, the calibration signal does not contain the brightness I of the light source 4, and it is expressed by the ratio regarding the transmittance of the fiducial mark 12 to the reference fiducial mark 15. Then, when the calibration signal is at a peak, the height position of a Z-stage 1 is found.

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