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    • 24. 发明申请
    • ELECTRONIC APPARATUS AND METHOD OF CONTROLLING ELECTRONIC APPARATUS
    • 电子设备和控制电子设备的方法
    • US20110205071A1
    • 2011-08-25
    • US13008548
    • 2011-01-18
    • Kimiyasu NamekawaHiroyuki Kobayashi
    • Kimiyasu NamekawaHiroyuki Kobayashi
    • G08B17/00H02H5/04
    • G06F1/206G01K7/42G01K7/425G01K2207/00H04N5/2253H04N5/23241Y02D10/16
    • An electronic apparatus includes: a temperature measurement section that measures a temperature of a heat generation source generating heat by consuming power or a temperature of an inner position of a casing of which the temperature changes due to the heat generation of the heat generation source; and an environmental temperature calculation section that calculates a temperature which is calculated using a predetermined relational equation that is different in accordance with a model from a difference between a first temperature measured by the temperature measurement section at a point in time when the heat generation source starts consuming a predetermined amount of power and a second temperature measured by the temperature measurement section at a point in time after the passage of a predetermined period from the start of consumption of a predetermined amount of power by the heat generation source as an environmental temperature in an environment where the casing is placed.
    • 电子设备包括:温度测量部,其通过消耗功率或由于发热源的发热引起的温度变化的壳体的内部位置的温度来测量产生热量的发热源的温度; 以及环境温度计算部,其计算使用与根据模型不同的预定关系式,根据由所述发热源开始的时刻由所述温度测量部测量的第一温度之间的差计算出的温度 消耗由所述温度测量部测量的预定量的功率和第二温度,所述预定量的功率和所述第二温度是在由所述发热源从预定量的功率开始消耗的预定时间段之后的时间点作为环境温度 放置外壳的环境
    • 25. 发明申请
    • MAGNETIC CIRCUIT FOR SPEAKER DEVICE AND SPEAKER DEVICE
    • 用于扬声器装置和扬声器装置的磁电路
    • US20110164781A1
    • 2011-07-07
    • US13063381
    • 2008-10-27
    • Minoru HorigomeHiroyuki KobayashiToshihiro Hikichi
    • Minoru HorigomeHiroyuki KobayashiToshihiro Hikichi
    • H04R1/00H04R9/06
    • H04R9/06
    • A speaker device includes a diaphragm (2), frame (3) vibratably supporting the diaphragm (2) in the vibration direction, and a driving part (4) provided at the frame (3), applying vibration to the diaphragm (2) in response to an audio signal. The driving part (4) includes a magnetic circuit (40) forming a magnetic gap (40G) in a different direction in respect with the vibration direction of the diaphragm (2), a voice coil support part (6) having a voice coil (60) and vibrating along the magnetic gap (40G), and a vibration direction converter part (7) direction converting the vibration of the voice coil support part (6) and transmitting the vibration to the diaphragm (2). The magnetic circuit (40) includes a pair of magnetic gaps (40G, 40G) having different directions of magnetic flux. The pair of magnetic gaps (40G,40G) are arranged side by side in the vibration direction of the voice coil support part (6) and the voice coil (60) supported by the voice coil support part (6) is planarly arranged so as to itinerate in the pair of magnetic gaps (40G, 40G).
    • 扬声器装置包括:隔膜(2),在振动方向上可振动地支撑隔膜(2)的框架(3)和设置在框架(3)处的驱动部分(4),向隔膜(2)施加振动 响应音频信号。 驱动部件(4)包括形成与隔膜(2)的振动方向不同的方向的磁隙(40G)的磁路(40),具有音圈(2)的音圈支撑部(6) 60),并且沿着磁隙(40G)振动,并且振动方向转换器部(7)的方向转换音圈支撑部(6)的振动并将振动传递到隔膜(2)。 磁路(40)包括具有不同磁通方向的一对磁隙(40G,40G)。 一对磁隙(40G,40G)沿着音圈支撑部(6)的振动方向并排布置,并且由音圈支撑部(6)支撑的音圈(60)平面布置成 以在一对磁隙(40G,40G)中进行行程。
    • 27. 发明授权
    • Semiconductor memory device and system with redundant element
    • 具有冗余元件的半导体存储器件和系统
    • US07933159B2
    • 2011-04-26
    • US12683029
    • 2010-01-06
    • Hiroyuki KobayashiDaisuke Kitayama
    • Hiroyuki KobayashiDaisuke Kitayama
    • G11C29/00
    • G11C29/848G11C29/24
    • A semiconductor memory device includes a memory cell array, a redundant element, an address specifying circuit configured to select one of a plurality of addresses as a redundancy address in response to a switchover signal, a decoder circuit configured to select the redundant element in response to an externally applied address that matches the redundancy address selected by the address specifying circuit, and a test mode setting circuit configured to change the switchover signal in response to an externally applied input, thereby to cause the redundancy address assigned to the redundant element to be switched between different ones of the plurality of addresses.
    • 半导体存储器件包括存储单元阵列,冗余元件,地址指定电路,被配置为响应于切换信号选择多个地址之一作为冗余地址;解码器电路,被配置为响应于所述冗余元件选择所述冗余元件 匹配由地址指定电路选择的冗余地址的外部施加的地址和被配置为响应于外部施加的输入而改变切换信号的测试模式设置电路,从而使分配给冗余元件的冗余地址被切换 在多个地址中的不同地址之间。