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21. 发明申请

US20100244897A1 SPIN MOSFET AND RECONFIGURABLE LOGIC CIRCUIT 有权
标题翻译：旋转MOSFET和可重新配置的逻辑电路
公开(公告)号：US20100244897A1
公开(公告)日：2010-09-30
申请号：US12725561
申请日：2010-03-17
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa
IPC分类号： H03K19/173 , H01L29/78
CPC分类号： H01L43/02 , B01D53/1493 , B01D53/62 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1695 , H01L28/00 , H01L29/0843 , H01L29/0895 , H01L29/66984 , H01L43/10
摘要： A spin MOSFET includes: a first ferromagnetic layer provided on an upper face of a semiconductor substrate, and having a fixed magnetization direction perpendicular to a film plane; a semiconductor layer provided on an upper face of the first ferromagnetic layer, including a lower face opposed to the upper face of the first ferromagnetic layer, an upper face opposed to the lower face, and side faces different from the lower face and the upper face; a second ferromagnetic layer provided on the upper face of the semiconductor layer, and having a variable magnetization direction perpendicular to a film plane; a first tunnel barrier provided on an upper face of the second ferromagnetic layer; a third ferromagnetic layer provided on an upper face of the first tunnel barrier; a gate insulating film provided on the side faces of the semiconductor layer; and a gate electrode provided on the side faces of the semiconductor layer with the gate insulating film being interposed therebetween.
摘要翻译：自旋MOSFET包括：设置在半导体衬底的上表面上并且具有与膜平面垂直的固定磁化方向的第一铁磁层; 设置在所述第一铁磁层的上表面上的半导体层，包括与所述第一铁磁层的上表面相对的下表面，与所述下表面相对的上表面，以及与所述下表面和所述上表面不同的侧面 ; 第二铁磁层，设置在所述半导体层的上表面上，并且具有与膜平面垂直的可变磁化方向; 设置在所述第二铁磁层的上表面上的第一隧道势垒; 设置在所述第一隧道屏障的上表面上的第三铁磁层; 设置在所述半导体层的侧面上的栅极绝缘膜; 以及设置在半导体层的侧面上的栅电极，其间插入有栅极绝缘膜。

22. 发明授权

US07796423B2 Reconfigurable logic circuit 有权
标题翻译：可重构逻辑电路
公开(公告)号：US07796423B2
公开(公告)日：2010-09-14
申请号：US12339638
申请日：2008-12-19
申请人： Hideyuki Sugiyama , Mizue Ishikawa , Tomoaki Inokuchi , Yoshiaki Saito , Tetsufumi Tanamoto
发明人： Hideyuki Sugiyama , Mizue Ishikawa , Tomoaki Inokuchi , Yoshiaki Saito , Tetsufumi Tanamoto
IPC分类号： G11C11/00
CPC分类号： H03K19/1733 , G11C11/161 , G11C11/1675 , G11C11/1697
摘要： It is made possible to provide a reconfigurable logic circuit with which high integration can be achieved. A reconfigurable logic circuit includes: a multiplexer which includes a plurality of spin MOSFETs each having a source and drain containing a magnetic material, and a selecting portion including a plurality of MOSFETs and selecting a spin MOSFET from the plurality of spin MOSFETs, based on control data transmitted from control lines; a determining circuit which determines whether magnetization of the magnetic material of the source and drain of a selected spin MOSFET, which is selected by the selecting portion, is in a first state or in a second state; and a first and second write circuits which put the magnetization of the magnetic material of the source and drain of the selected spin MOSFET into the second and first states respectively by supplying a write current flowing between the source and drain of the selected spin MOSFET.
摘要翻译：可以提供可实现高集成度的可重构逻辑电路。可重配置逻辑电路包括：多路复用器，其包括多个自旋MOSFET，每个具有包含磁性材料的源极和漏极，以及包括多个MOSFET的选择部分，并且基于控制从多个自旋MOSFET中选择自旋MOSFET 从控制线传输的数据; 确定电路，其确定由选择部分选择的所选择的自旋MOSFET的源极和漏极的磁性材料的磁化是处于第一状态还是处于第二状态; 以及第一和第二写入电路，其通过提供在选定的自旋MOSFET的源极和漏极之间流动的写入电流，将所选自旋MOSFET的源极和漏极的磁性材料的磁化分别置于第二和第一状态。

23. 发明申请

US20100072528A1 SPIN TRANSISTOR, INTEGRATED CIRCUIT, AND MAGNETIC MEMORY 有权
标题翻译：旋转晶体管，集成电路和磁记忆
公开(公告)号：US20100072528A1
公开(公告)日：2010-03-25
申请号：US12561475
申请日：2009-09-17
申请人： Tomoaki INOKUCHI , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Yoshiaki Saito
发明人： Tomoaki INOKUCHI , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Yoshiaki Saito
IPC分类号： H01L29/82
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： A spin transistor includes a first ferromagnetic layer, a second ferromagnetic layer, a semiconductor layer between the first and second ferromagnetic layers, and a gate electrode on or above a surface of the semiconductor layer, the surface being between the first and second ferromagnetic layers. The first ferromagnetic layer comprises a ferromagnet which has a first minority spin band located at a high energy side and a second minority spin band located at a low energy side, and has a Fermi level in an area of the high energy side higher than a middle of a gap between the first and second minority spin bands.
摘要翻译：自旋晶体管包括第一铁磁层，第二铁磁层，第一和第二铁磁层之间的半导体层，以及在半导体层的表面上或上方的栅电极，该表面位于第一和第二铁磁层之间。第一铁磁层包括具有位于高能侧的第一少数自旋带和位于低能侧的第二少数自旋带的铁磁体，并且在高能量侧的区域中的费米能级高于中间第一和第二少数自旋带之间的间隙。

24. 发明授权

US07485938B2 Magneto-resistive effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US07485938B2
公开(公告)日：2009-02-03
申请号：US11521516
申请日：2006-09-15
申请人： Yoshiaki Saito , Hideyuki Sugiyama
发明人： Yoshiaki Saito , Hideyuki Sugiyama
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/16 , H01L27/228
摘要： It is possible to perform a writing operation with low power consumption and a low current, and enhance reliability without causing element breakdown. There are provided a first magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned; a second magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned; a magnetic recording layer formed between the first magnetization-pinned layer and the second magnetization-pinned layer and including at least one magnetic film in which a magnetization direction is changeable by injecting spin-polarized electrons; a tunnel barrier layer formed between the first magnetization-pinned layer and the magnetic recording layer; and a nonmagnetic intermediate layer formed between the magnetic recording layer and the second magnetization-pinned layer. The magnetization direction of the magnetic film of the first magnetization-pinned layer on the magnetic recording layer side is substantially anti-parallel to the magnetization direction of the magnetic film of the second magnetization-pinned layer on the magnetic recording layer side.
摘要翻译：可以执行低功耗和低电流的写入操作，并且可以在不引起元件故障的情况下提高可靠性。提供了包括磁化方向被固定的至少一个磁性膜的第一磁化固定层; 第二磁化固定层，其包括其中磁化方向被钉扎的至少一个磁性膜; 形成在第一磁化固定层和第二磁化固定层之间的磁记录层，并且包括通过注入自旋极化电子而使磁化方向可变化的至少一个磁性膜; 形成在第一磁化固定层和磁记录层之间的隧道势垒层; 以及形成在磁记录层和第二磁化固定层之间的非磁性中间层。磁记录层侧的第一磁化固定层的磁性膜的磁化方向基本上与磁记录层侧的第二磁化固定层的磁性膜的磁化方向反平行。

25. 发明申请

US20090026010A1 PROCESS FOR PRODUCING SOUND ABSORBER AND PRODUCED BY THE PROCESS, SOUND ABSORBER AND SOUND ABSORBING STRUCTURE 有权
标题翻译：用于生产声音吸收器的过程，由过程产生，声音吸收和声音吸收结构
公开(公告)号：US20090026010A1
公开(公告)日：2009-01-29
申请号：US11817980
申请日：2006-03-07
申请人： Yoshiaki Saito , Minoru Sugawara , Hirofumi Goda , Takeharu Suga , Masaharu Okamura , Toshifumi Sakai
发明人： Yoshiaki Saito , Minoru Sugawara , Hirofumi Goda , Takeharu Suga , Masaharu Okamura , Toshifumi Sakai
IPC分类号： E04B1/82 , B29C45/73
CPC分类号： B29C45/2628 , B29C44/005 , B29C44/3415 , B29C44/583 , B60R13/08 , B60R13/0815 , B60R13/0838 , G10K11/16 , G10K11/168
摘要： A process for producing a sound absorber having skin layers constituting front and back surfaces and, interposed between the skin layers, a void layer having a number of voids, and having a plurality of formed holes each having a depth which is enough to penetrate one of the skin layers and is not enough to reach the other skin layer; comprising: providing a mold having a fixed part, a movable part, and at least one pin disposed in a manner that it can be projected into and retracted from a cavity; and having a step to cause the pin to project into the cavity during the course of charging the cavity with a resin material and molding the sound absorber and form the holes communicating with the void layer simultaneously with molding of the sound absorber.
摘要翻译：一种制造具有构成前表面和后表面的表层的吸声器的方法，并且介于所述表层之间，具有多个空隙的空隙层，并且具有多个形成的孔，每个孔具有足以穿透皮肤层并不足以到达其他皮肤层; 包括：提供具有固定部分，可移动部分和至少一个销的模具，所述至少一个销以能够突出到空腔中并从其中缩回的方式设置; 并且在使用树脂材料填充空腔的过程中引起销突出到空腔中的步骤，并且在吸声器的模制的同时模制吸声器并且形成与空隙层连通的孔。

26. 发明申请

US20090010577A1 Structure for Closing a Rail Mounting Hole 有权
标题翻译：关闭导轨安装孔的结构
公开(公告)号：US20090010577A1
公开(公告)日：2009-01-08
申请号：US11883422
申请日：2005-12-15
申请人： Katsuya Iida , Yoshiaki Saito , Masahiro Kumagai , Reinhard G. Welle
发明人： Katsuya Iida , Yoshiaki Saito , Masahiro Kumagai , Reinhard G. Welle
IPC分类号： F16C29/08
CPC分类号： F16C29/082 , F16B37/14 , F16C29/004 , F16C29/0647
摘要： The present invention provides a structure for closing a track rail mounting hole, which prevents a closing cap from being press-fitted with an inclined state into the rail mounting hole, thereby being capable of positively preventing formation of a gap between the rail mounting hole and the closing cap. The closing cap (70) includes: a fitting portion (71) having an outer diameter larger than an inner diameter of the rail mounting hole (11b), to be press-fitted into the rail mounting hole (11b); and a leading end portion (72) to be inserted into the rail mounting hole (11b) before press-fitting the fitting portion (71) into the rail mounting hole (11b), for provisionally positioning the closing cap (70) with respect to the rail mounting hole (11b). The leading end portion (72) is provided with a positioning protrusion (74), protruding from a periphery of the leading end portion (72) in a substantially triangular section to constitute a tip edge portion (75), the tip edge portion (75) having an outer diameter being set to be the same or slightly larger than the inner diameter of the rail mounting hole (11b).
摘要翻译：本发明提供一种用于封闭轨道安装孔的结构，其防止闭合盖被压配合到轨道安装孔中的倾斜状态，从而能够积极地防止轨道安装孔和封闭帽。封闭盖（70）包括：外径比导轨安装孔（11b）的内径大的嵌合部（71），压配合到导轨安装孔（11b）中; 以及在将嵌合部（71）压入轨道安装孔（11b）之前插入轨道安装孔（11b）中的前端部（72），用于将闭合盖（70）相对于轨道安装孔（11b）。前端部（72）具有定位突起（74），该定位突起（74）从前端部（72）的周围以大致三角形的部分突出，构成前端部（75），前端部），其外径被设定为与轨道安装孔（11b）的内径相同或略大。

27. 发明申请

US20080285183A1 MAGNETO-RESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：US20080285183A1
公开(公告)日：2008-11-20
申请号：US12177596
申请日：2008-07-22
申请人： Hideyuki Sugiyama , Yoshiaki Saito
发明人： Hideyuki Sugiyama , Yoshiaki Saito
IPC分类号： G11B5/33
CPC分类号： G11C11/161
摘要： An area of an element can be made small and fluctuation in area can be reduced. A magneto-resistance effect element is provided with a first electrode with an end face; a magneto-resistance effect film which is formed such that a surface thereof comes in contact with the end face of the first electrode; and a second electrode which is formed on another surface of the magneto-resistance effect element opposed from the surface coming in contact with the surface of the first electrode. The magneto-resistance effect film includes a magnetization pinned layer whose magnetization direction is pinned, a magnetization free layer whose magnetization direction is changeable, and a first non-magnetic layer which is provided between the magnetization pinned layer and the magnetization free layer.
摘要翻译：可以使元件的区域变小，并且可以减小面积的波动。磁阻效应元件设置有具有端面的第一电极; 形成为使得其表面与第一电极的端面接触的磁阻效应膜; 以及第二电极，其形成在与从第一电极的表面接触的表面相对的磁阻效应元件的另一个表面上。磁阻效应膜包括其磁化方向被钉扎的磁化钉扎层，其磁化方向可变的磁化自由层，以及设置在磁化钉扎层与磁化自由层之间的第一非磁性层。

28. 发明申请

US20080144233A1 TUNNEL MAGNETORESISTANCE EFFECT DEVICE, AND A PORTABLE PERSONAL DEVICE 有权
标题翻译：隧道磁阻效应装置和便携式个人装置
公开(公告)号：US20080144233A1
公开(公告)日：2008-06-19
申请号：US12031472
申请日：2008-02-14
申请人： Minoru Amano , Yoshiaki Saito
发明人： Minoru Amano , Yoshiaki Saito
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/15 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/228
摘要： A TMR device comprising an antiferromagnetic layer made of an antiferromagnetic material containing Mn, a magnetization fixed layer made of a ferromagnetic material, a tunnel barrier layer made of a dielectric material, and a magnetization free layer made of a ferromagnetic material. An insulator material layer is inserted in the magnetization fixed layer at a distance from the antiferromagnetic material layer and the tunnel barrier layer. One material can be expressed by NX, where X is a first element selected from the group consisting of oxygen, nitrogen and carbon; and N is a second element, provided that the bonding energy between the first and the second elements is higher than the bonding energy between manganese and the first element. A second material can be expressed by MX, where M is an element selected from the group consisting of titanium, tantalum, vanadium, aluminum, europium, and scandium; and X is an element selected from the group consisting of oxygen, nitrogen and carbon. The tunnel magnetoresistance effect device suppresses the diffusion of Mn from the Mn based alloy constituting the antiferromagnetic material layer even after heat treatment is performed.
摘要翻译：一种TMR装置，包括由含铁的反铁磁材料制成的反铁磁层，由铁磁材料制成的磁化固定层，由介电材料制成的隧道势垒层和由铁磁材料制成的无磁化层。将绝缘体材料层插入到与反铁磁性材料层和隧道势垒层相隔一定距离的磁化固定层中。一种材料可由NX表示，其中X是选自氧，氮和碳的第一元素; 并且N是第二元素，条件是第一和第二元素之间的结合能高于锰与第一元素之间的键合能。第二种材料可以由MX表示，其中M是选自钛，钽，钒，铝，铕和钪的元素; X是选自氧，氮和碳的元素。隧道磁阻效应器件即使在进行热处理之后也能抑制构成反铁磁体层的Mn基合金的Mn扩散。

29. 发明授权

US07364014B2 Sound absorbing body, sound absorbing structural body, and method of manufacturing these bodies 有权
标题翻译：吸音体，吸声结构体及其制造方法
公开(公告)号：US07364014B2
公开(公告)日：2008-04-29
申请号：US10512572
申请日：2003-04-25
申请人： Hirofumi Goda , Minoru Sugawara , Yoshiaki Saito , Takeharu Suga , Masaharu Okamura , Toshifumi Sakai
发明人： Hirofumi Goda , Minoru Sugawara , Yoshiaki Saito , Takeharu Suga , Masaharu Okamura , Toshifumi Sakai
IPC分类号： E04B1/82
CPC分类号： B32B3/266 , B29C44/583 , B29C44/586 , B32B27/12 , B32B2323/04 , B32B2323/10 , B32B2355/02 , B32B2367/00 , B32B2369/00 , B32B2371/00 , B32B2377/00 , G10K11/16 , G10K11/168 , G10K11/172
摘要： A sound absorbing body 40 has a molded body 44 including two unexpanded layers 41, 42 and an expanded layer 43 having a number of voids and held between these unexpanded layers 41, 42, a plurality of holes 41A of a depth that passes through the unexpanded layer 41 and does not reach the other unexpanded layer 42 are formed at any positions on the molded body 44, a cross-sectional area of the hole 41A is in the range from 0.785 to 314 mm2, and the pitch is 1 mm or larger. Laminating a plurality of materials is not required, and both the sound absorbing capability and sound insulating capability can be secured by integral molding, and further, only unpleasant sounds can selectively be absorbed.
摘要翻译：吸声体40具有包括两个未膨胀层41,42的发泡层43和具有多个空隙的发泡层43并且保持在这些未膨胀层41,42之间的多个孔41A，在成型体44上的任何位置形成未膨胀层41而未到达另一未膨胀层42，孔41A的截面积在0.785〜314mm的范围内。，间距为1mm以上。不需要层压多种材料，并且通过一体成型可以确保吸声能力和隔音能力，并且还可以选择性地吸收不愉快的声音。

30. 发明授权

US07345852B2 Magnetoresistive element and magnetic memory device 有权
标题翻译：磁阻元件和磁存储器件
公开(公告)号：US07345852B2
公开(公告)日：2008-03-18
申请号：US11367483
申请日：2006-03-06
申请人： Koichiro Inomata , Kentaro Nakajima , Yoshiaki Saito , Masayuki Sagoi , Tatsuya Kishi
发明人： Koichiro Inomata , Kentaro Nakajima , Yoshiaki Saito , Masayuki Sagoi , Tatsuya Kishi
IPC分类号： G11B5/39 , G11C11/15 , G11C7/00
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L27/224 , H01L43/08 , Y10T428/1121 , Y10T428/115
摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.
摘要翻译：磁阻元件具有铁磁双隧道结，其具有第一反铁磁层/第一铁磁层/第一介电层/第二铁磁层/第二电介质层/第三铁磁层/第二反铁磁层的堆叠结构。作为自由层的第二铁磁层由Co基合金或Co系合金/ Ni-Fe合金/ Co系合金的三层膜构成。隧道电流在第一铁磁层和第三铁磁层之间流动。

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