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1. 发明授权

US07355824B2 Magnetoresistive effect element and magnetic memory having the same 有权
标题翻译：磁阻效应元件和具有相同的磁存储器
公开(公告)号：US07355824B2
公开(公告)日：2008-04-08
申请号：US10976840
申请日：2004-11-01
申请人： Katsuya Nishiyama , Yoshiaki Saito , Minoru Amano
发明人： Katsuya Nishiyama , Yoshiaki Saito , Minoru Amano
IPC分类号： G11B5/39 , G11C11/00
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/224 , H01L27/228 , Y10T428/1114
摘要： The present invention relates to a magnetoresistive effect element, which has a large MR ratio, excellent thermostability and a small switching magnetic field even if its size is decreased, and a magnetic memory using the magnetoresistive effect element. The magnetoresistive effect element includes: a storage layer formed by stacking a plurality of ferromagnetic layers via non-magnetic layers; a magnetic film having at least one ferromagnetic layer; and a tunnel barrier layer provided between the storage layer and the magnetic film. Each of the ferromagnetic layers of the storage layer is formed of an Ni—Fe—Co ternary alloy. A peak-to-peak maximum surface roughness on each of an interface between the storage layer and the tunnel barrier layer and an interface between the magnetic film and the tunnel barrier layer is 0.4 nm or less.
摘要翻译：磁阻效应元件本发明涉及磁阻效应元件，其具有大的MR比，即使其尺寸减小也具有良好的热稳定性和小的开关磁场;以及使用磁阻效应元件的磁存储器。磁阻效应元件包括：通过非磁性层堆叠多个铁磁层而形成的存储层; 具有至少一个铁磁层的磁性膜; 以及设置在所述存储层和所述磁性膜之间的隧道势垒层。存储层的每个铁磁层由Ni-Fe-Co三元合金形成。存储层和隧道势垒层之间的界面上的峰 - 峰最大表面粗糙度以及磁性膜和隧道势垒层之间的界面为0.4nm以下。

2. 发明授权

US06839206B2 Ferromagnetic double tunnel junction element with asymmetric energy band 有权
标题翻译：具有不对称能带的铁磁双隧道结元件
公开(公告)号：US06839206B2
公开(公告)日：2005-01-04
申请号：US10093390
申请日：2002-03-11
申请人： Yoshiaki Saito , Masayuki Sagoi , Minoru Amano , Kentaro Nakajima , Shigeki Takahashi , Tatsuya Kishi
发明人： Yoshiaki Saito , Masayuki Sagoi , Minoru Amano , Kentaro Nakajima , Shigeki Takahashi , Tatsuya Kishi
IPC分类号： G01R33/09 , G11B5/39 , G11C11/14 , G11C11/15 , G11C11/16 , H01F10/26 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11B5/3954 , G11C11/15 , G11C11/16 , H01L27/224 , H01L27/228
摘要： There is provided a magnetoresistance effect element including a first pinned ferromagnetic layer, a second pinned ferromagnetic layer facing the first pinned ferromagnetic layer, surface regions of the first and second pinned ferromagnetic layer facing each other being different from each other in composition, a free ferromagnetic layer intervening between the first and second pinned ferromagnetic layers, a first tunnel barrier layer intervening between the first pinned ferromagnetic layer and the free ferromagnetic layer, and a second tunnel barrier layer intervening between the second pinned ferromagnetic layer and the free ferromagnetic layer.

3. 发明授权

US06717845B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US06717845B2
公开(公告)日：2004-04-06
申请号：US10345253
申请日：2003-01-16
申请人： Yoshiaki Saito , Katsuya Nishiyama , Shigeki Takahashi , Minoru Amano , Tomomasa Ueda , Hiroaki Yoda , Yoshiaki Asao , Yoshihisa Iwata , Tatsuya Kishi
发明人： Yoshiaki Saito , Katsuya Nishiyama , Shigeki Takahashi , Minoru Amano , Tomomasa Ueda , Hiroaki Yoda , Yoshiaki Asao , Yoshihisa Iwata , Tatsuya Kishi
IPC分类号： G11C1115
CPC分类号： G11C11/16
摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first wiring extending in a first direction on or below the magnetoresistance effect element; a covering layer provided at least both sides of the first wiring, the covering layer being made of magnetic material, and the covering layer having a uniaxial anisotropy in the first direction along which a magnetization of the covering layer occurs easily; and a writing circuit configured to pass a current through the first wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.
摘要翻译：磁存储器包括：具有磁记录层的磁阻效应元件; 在所述磁阻效应元件上或第二方向上延伸的第一布线; 所述覆盖层至少设置在所述第一布线的两侧，所述覆盖层由磁性材料制成，所述覆盖层在容易发生所述覆盖层的磁化的第一方向上具有单轴各向异性; 以及写入电路，被配置为使电流通过第一布线，以便通过由电流产生的磁场将信息记录在磁记录层中。

4. 发明授权

US06707711B2 Magnetic memory with reduced write current 失效
标题翻译：具有减小写入电流的磁记忆体
公开(公告)号：US06707711B2
公开(公告)日：2004-03-16
申请号：US10357217
申请日：2003-02-04
申请人： Yoshiaki Saito , Koichiro Inomata , Minoru Amano , Kentaro Nakajima , Masayuki Sagoi , Tatsuya Kishi , Shigeki Takahashi
发明人： Yoshiaki Saito , Koichiro Inomata , Minoru Amano , Kentaro Nakajima , Masayuki Sagoi , Tatsuya Kishi , Shigeki Takahashi
IPC分类号： G11C1100
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/15 , H01F10/3231 , H01L27/224 , H01L27/228
摘要： There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.
摘要翻译：提供了一种磁存储器，包括彼此相交并彼此分开布置的第一和第二布线，位于第一和第二布线之间的磁阻效应膜，以及第一磁性膜，其包括面向磁阻效应膜的第一部分，其具有第一插入其间的布线和位于第一布线的两侧并与第一部分磁连接的一对第二部分，第一和第二部分中的每一个具有包含钴的高饱和磁化软磁材料和金属非金属纳米颗粒膜。

5. 发明授权

US06590803B2 Magnetic memory device 失效
公开(公告)号：US06590803B2
公开(公告)日：2003-07-08
申请号：US10102634
申请日：2002-03-22
申请人： Yoshiaki Saito , Kentaro Nakajima , Masayuki Sagoi , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi
发明人： Yoshiaki Saito , Kentaro Nakajima , Masayuki Sagoi , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi
IPC分类号： G11C1100
CPC分类号： G11C11/15 , G11C11/16
摘要： A magnetic memory device includes a plurality of magnetoresistive elements arranged on a first plane in a matrix form, a plurality of first writing lines which are arranged on a second plane different from the first plane adjacent to the magnetoresistive elements, a first address decoder which selects a desired one from the plurality of first writing lines, a plurality of second writing lines crossing the plurality of first writing lines on a third plane different from the second plane and having parts adjacent to the plurality of magnetoresistive elements on the second plane and parallel to the plurality of first writing lines, and a second address decoder which selects a desired one from the plurality of second writing lines.

6. 发明授权

US06522573B2 Solid-state magnetic memory using ferromagnetic tunnel junctions 失效
标题翻译：使用铁磁隧道结的固态磁存储器
公开(公告)号：US06522573B2
公开(公告)日：2003-02-18
申请号：US09893612
申请日：2001-06-29
申请人： Yoshiaki Saito , Kentaro Nakajima , Minoru Amano
发明人： Yoshiaki Saito , Kentaro Nakajima , Minoru Amano
IPC分类号： G11C1100
CPC分类号： H01L27/224 , B82Y10/00 , G11C11/15
摘要： According to the present invention, there is provided a solid-state magnetic memory including a semiconductor substrate, a ferromagnetic tunnel junction element facing the semiconductor substrate, first and second wirings sandwiching the ferromagnetic tunnel junction elements from both sides thereof, a third wiring facing the ferromagnetic tunnel junction element, and a diode at least part of which is formed in a surface region of the semiconductor substrate.
摘要翻译：根据本发明，提供了一种包括半导体衬底，面向半导体衬底的铁磁隧道结元件的固态磁存储器，从其两侧将铁磁隧道结元件夹在中间的第一和第二配线，面向铁磁隧道结元件，以及二极管，其至少一部分形成在半导体衬底的表面区域中。

7. 发明授权

US07359163B2 Tunnel magnetoresistance effect device, and a portable personal device 有权
标题翻译：隧道磁阻效应器，以及便携式个人设备
公开(公告)号：US07359163B2
公开(公告)日：2008-04-15
申请号：US10884946
申请日：2004-07-07
申请人： Minoru Amano , Yoshiaki Saito
发明人： Minoru Amano , Yoshiaki Saito
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/15 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/228
摘要： A TMR device comprising an antiferromagnetic layer made of an antiferromagnetic material containing Mn, a magnetization fixed layer made of a ferromagnetic material, a tunnel barrier layer made of a dielectric material, and a magnetization free layer made of a ferromagnetic material. An insulator material layer is inserted in the magnetization fixed layer at a distance from the antiferromagnetic material layer and the tunnel barrier layer. One material can be expressed by NX, where X is a first element selected from the group consisting of oxygen, nitrogen and carbon; and N is a second element, provided that the bonding energy between the first and the second elements is higher than the bonding energy between manganese and the first element. A second material can be expressed by MX, where M is an element selected from the group consisting of titanium, tantalum, vanadium, aluminum, europium, and scandium; and X is an element selected from the group consisting of oxygen, nitrogen and carbon. The tunnel magnetoresistance effect device suppresses the diffusion of Mn from the Mn based alloy constituting the antiferromagnetic material layer even after heat treatment is performed.
摘要翻译：一种TMR装置，包括由含铁的反铁磁材料制成的反铁磁层，由铁磁材料制成的磁化固定层，由介电材料制成的隧道势垒层和由铁磁材料制成的无磁化层。将绝缘体材料层插入到与反铁磁性材料层和隧道势垒层相隔一定距离的磁化固定层中。一种材料可由NX表示，其中X是选自氧，氮和碳的第一元素; 并且N是第二元素，条件是第一和第二元素之间的结合能高于锰与第一元素之间的键合能。第二种材料可以由MX表示，其中M是选自钛，钽，钒，铝，铕和钪的元素; X是选自氧，氮和碳的元素。隧道磁阻效应器件即使在进行热处理之后也能抑制构成反铁磁体层的Mn基合金的Mn扩散。

8. 发明授权

US07247506B2 Method for producing magnetic memory device 有权
标题翻译：磁存储器件的制造方法
公开(公告)号：US07247506B2
公开(公告)日：2007-07-24
申请号：US11389281
申请日：2006-03-27
申请人： Minoru Amano , Tatsuya Kishi , Yoshiaki Saito , Tomomasa Ueda , Hiroaki Yoda
发明人： Minoru Amano , Tatsuya Kishi , Yoshiaki Saito , Tomomasa Ueda , Hiroaki Yoda
IPC分类号： H01L21/00
CPC分类号： G11C11/15 , Y10T29/49021
摘要： There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.
摘要翻译：提供了一种对于写入线具有小的开关电流并且其变化小的磁存储器件。一种制造这种磁存储器件的方法包括：形成磁阻效应元件; 形成第一绝缘膜以覆盖磁阻效应元件; 形成涂膜以覆盖第一绝缘膜; 暴露磁阻效应元件的顶面; 在磁阻效应元件上形成上部写入线; 通过去除一部分或全部涂膜，将第一绝缘膜暴露在磁阻效应元件的侧面上; 以及形成轭结构件，以便覆盖上部书写线的至少一个侧面部分，以便与该磁阻效应元件侧面上暴露的第一绝缘膜接触。

9. 发明授权

US07245464B2 Magnetic memory having a ferromagnetic tunneling junction 有权
标题翻译：具有铁磁隧道结的磁存储器
公开(公告)号：US07245464B2
公开(公告)日：2007-07-17
申请号：US11069991
申请日：2005-03-03
申请人： Tatsuya Kishi , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Katsuya Nishiyama
发明人： Tatsuya Kishi , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Katsuya Nishiyama
IPC分类号： G11B5/39
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11C11/16 , H01F10/3268 , H01L43/08
摘要： A magnetoresistive effect element of a tunnel junction type includes a magnetic multi-layered film (1), ferromagnetic film (3) and intervening insulating film (2) such that a current flows between the magnetic multi-layered film and the ferromagnetic film, tunneling through the insulating film. The magnetic multi-layered film includes a first ferromagnetic layer, second ferromagnetic layer and anti-ferromagnetic layer inserted between the first and second ferromagnetic layers.
摘要翻译：隧道结型的磁阻效应元件包括磁性多层膜（1），铁磁膜（3）和中间绝缘膜（2），使得电流在磁性多层膜和铁磁膜之间流动，隧穿通过绝缘膜。磁性多层膜包括插入第一和第二铁磁层之间的第一铁磁层，第二铁磁层和反铁磁层。

10. 发明授权

US07023725B2 Magnetic memory 失效
标题翻译：磁记忆
公开(公告)号：US07023725B2
公开(公告)日：2006-04-04
申请号：US10864522
申请日：2004-06-10
申请人： Yoshiaki Saito , Tomomasa Ueda , Tatsuya Kishi , Minoru Amano
发明人： Yoshiaki Saito , Tomomasa Ueda , Tatsuya Kishi , Minoru Amano
IPC分类号： G11C7/00
CPC分类号： G11C11/15
摘要： There are provided at least one wire, a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire, and first yokes provided so as to be spaced from at least one pair of opposed side faces of the magnetoresistive effect element to form a magnetic circuit in cooperation with the magnetoresistive effect element when a current is caused to flow in the wire. Each of the first yokes has at least two soft magnetic layers which are stacked via a non-magnetic layer.
摘要翻译：提供了至少一根导线，一个磁阻效应元件，其具有存储层，其磁化方向根据通过使电流在线中流动而产生的电流磁场而变化，并且第一磁轭设置成与至少一个磁阻效应元件的一对相对的侧面，当电流在电线中流动时与磁阻效应元件协同地形成磁路。每个第一轭具有至少两个通过非磁性层堆叠的软磁性层。

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