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21. 发明授权

US5872284A Method for purifying crude naphthalenedicarboxylic acid 失效
标题翻译：粗萘二甲酸纯化方法
公开(公告)号：US5872284A
公开(公告)日：1999-02-16
申请号：US860622
申请日：1997-07-09
申请人： Hiroshi Iwasaki , Nobuya Hirokane , Masayasu Ishibashi , Satoshi Inoki
发明人： Hiroshi Iwasaki , Nobuya Hirokane , Masayasu Ishibashi , Satoshi Inoki
IPC分类号： C07C51/487 , C07C51/493 , C07C63/38 , C07C51/42
CPC分类号： C07C51/487
摘要： The invention provides a method for purifying a crude naphthalenedicarboxylic acid comprising the steps of mixing a crude naphthalenedicarboxylic acid and a water/alcohol solvent to esterify a part of the naphthalenedicarboxylic acid, thereby dissolving a naphthalenedicarboxylic ester into the solvent, and then contacting the resulting reaction mixture with hydrogen in the presence of a hydrogenation catalyst to hydrogenate impurities which are contained in the crude naphthalenedicarboxylic acid and which are capable of being hydrogenated, thereby dissolving and removing hydrogenation products into the water/alcohol solvent. A mixture of a naphthalene dicarboxylic acid and a naphthalenedicarboxylic ester with reduced impurity contents, or a high-purity naphthalenedicarboxylic acid can be obtained.
摘要翻译： PCT No.PCT / JP96 / 03180 Sec。 371日期1997年7月9日第 102（e）日期1997年7月9日PCT提交1996年10月30日PCT公布。第WO97 / 17318号公报日期：1997年5月15日本发明提供了一种纯化萘二甲酸粗品的方法，包括将粗萘二甲酸与水/醇溶剂混合以使部分萘二甲酸酯化，从而将萘二甲酸酯溶解在溶剂中，然后使所得反应混合物与氢气在氢化催化剂存在下接触，氢化含有粗萘二甲酸的杂质，并能够被氢化，从而将氢化产物溶解并除去到水/醇溶剂中。可以获得具有降低的杂质含量的萘二甲酸和萘二甲酸酯的混合物或高纯度萘二甲酸。

22. 发明授权

US5786271A Production of semiconductor package having semiconductor chip mounted with its face down on substrate with protruded electrodes therebetween and semiconductor package 失效
标题翻译：制造具有半导体芯片的半导体封装，半导体芯片正面朝下安装在其上具有突出电极的基板和半导体封装之间
公开(公告)号：US5786271A
公开(公告)日：1998-07-28
申请号：US675213
申请日：1996-07-03
申请人： Mitsuru Ohida , Hideo Aoki , Hiroshi Iwasaki
发明人： Mitsuru Ohida , Hideo Aoki , Hiroshi Iwasaki
IPC分类号： H01L21/56 , H01L21/60 , H01L23/28 , H01L23/31 , H01L23/485 , H01L23/498 , H01L21/44
CPC分类号： H01L24/81 , H01L23/3121 , H01L23/49827 , H01L24/11 , H01L24/13 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13144 , H01L2224/16225 , H01L2224/16235 , H01L2224/32225 , H01L2224/73204 , H01L2224/81801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14
摘要： A semiconductor package has a wiring circuit containing a conductive terminal formed on a first face of a substrate and a flat external connecting terminal electrically connected to the wiring circuit formed on a second face. An electrode pad is formed on a first face of a semiconductor chip. This semiconductor chip is mounted on the substrate with its first face down to oppose the first face of the substrate. A ball bump as a protruded electrode formed on the conductive terminal of the substrate and a ball bump as a protruded electrode formed on the electrode pad of the semiconductor chip are connected by solid phase diffusion. And, a sealing resin layer is formed in the space between the substrate and the semiconductor chip opposed to each other with a second face of the semiconductor chip exposed.
摘要翻译：半导体封装具有包括形成在基板的第一面上的导电端子和与形成在第二面上的布线电路电连接的扁平的外部连接端子的布线电路。电极焊盘形成在半导体芯片的第一面上。该半导体芯片以其第一面向下安装在基板上以与基板的第一面相对。作为形成在基板的导电端子上的突起电极的球凸点和形成在半导体芯片的电极焊盘上的突起电极的球凸点通过固相扩散连接。并且，在半导体芯片的第二面露出的情况下，在基板与半导体芯片之间的空间中形成密封树脂层。

23. 发明授权

US5599389A Compound semiconductor and method of manufacturing the same 失效
标题翻译：化合物半导体及其制造方法
公开(公告)号：US5599389A
公开(公告)日：1997-02-04
申请号：US340478
申请日：1994-11-14
申请人： Hiroshi Iwasaki
发明人： Hiroshi Iwasaki
IPC分类号： H01L21/762 , H01L21/20 , H01L21/203 , H01L21/205 , H01L27/12 , H01L29/10 , H01L21/02
CPC分类号： H01L29/10 , H01L21/02395 , H01L21/02543 , H01L21/02546
摘要： According to this invention, there is provided a compound semiconductor substrate including, on a compound semiconductor base containing a high-concentration impurity, a high-resistance single-crystal layer consisting of the same compound semiconductor as the compound semiconductor constituting the base. Active elements are formed in the high-resistance single-crystal layer.
摘要翻译：根据本发明，提供了一种化合物半导体衬底，其在包含高浓度杂质的化合物半导体基底上包括由构成基底的化合物半导体构成的相同化合物半导体的高电阻单晶层。有源元件形成在高电阻单晶层中。

24. 发明授权

US5475157A Process for producing aromatic hydroxylic compound 失效
标题翻译：制备芳香族羟基化合物的方法
公开(公告)号：US5475157A
公开(公告)日：1995-12-12
申请号：US256245
申请日：1994-09-02
申请人： Shintaro Araki , Hiroshi Iwasaki , Hiroyasu Ohno , Isao Hashimoto , Teruaki Mukaiyama
发明人： Shintaro Araki , Hiroshi Iwasaki , Hiroyasu Ohno , Isao Hashimoto , Teruaki Mukaiyama
IPC分类号： C07C37/08 , C07C45/53
CPC分类号： C07C37/08 , Y02P20/52
摘要： There is disclosed a process for producing an aromatic hydroxylic compound by acid decomposition of a hydroperoxide having the general formula (I) ##STR1## wherein Ar represents an aromatic hydrocarbon group having a valence of n; and n represents an integer of 1 or 2, in the presence of an acid catalyst, thereby to provide an aromatic hydroxylic compound having the general formula (II)Ar--(OH)n (II)wherein Ar and n are the same as above defined, characterized in that tetrafluoroboric acid, hexafluorosilicic acid or hexafluorophosphoric acid is used as the acid catalyst. According to this process, the aromatic hydroxylic compound is obtained in a high yield while the by-production of hydroxyacetone is effectively suppressed. In paricular, a more effective suppression of by-production of hydroxyacetone and a higher yield of the target compound can be achieved by carrying out the acid decomposition reaction in two stages wherein the first stage of the reaction is carried out in the first reactor at a temperature of 50.degree.-95.degree. C., the resultant reaction mixture is sent to the second reactor, and the second stage of the reaction is then carried out in the second reactor at a temperature of 80.degree.-120.degree. C.
摘要翻译： PCT No.PCT / JP93 / 01586 Sec。 371日期：1994年9月2日 102（e）1994年9月2日PCT 1993年11月1日PCT公布。公开号WO94 / 10115 PCT 日本公报1994年5月11日。公开了通过酸分解具有通式（I）c的化合价n为n的烃基的氢过氧化物制备芳族羟基化合物的方法。并且n表示1或2的整数，在酸催化剂的存在下，由此提供具有通式（II）的Ar-（OH）n（II）的芳族羟基化合物，其中Ar和n与上述相同其特征在于使用四氟硼酸，六氟硅酸或六氟磷酸作为酸催化剂。根据该方法，以高产率获得芳族羟基化合物，同时有效抑制羟基丙酮的副产物。在这种情况下，可以通过在两个阶段中进行酸分解反应来实现对羟基丙酮的副产物的更有效抑制和目标化合物的较高产率，其中反应的第一阶段在第一反应器中以温度为50-95℃，将所得反应混合物送至第二反应器，然后在第二反应器中在80-120℃的温度下进行第二阶段反应。

25. 发明授权

US5473075A Diastereomer salt of optically active quinolinemevalonic acid 失效
标题翻译：光学活性喹啉酮戊酸的非对映异构体盐
公开(公告)号：US5473075A
公开(公告)日：1995-12-05
申请号：US123117
申请日：1993-09-20
申请人： Yoshio Ohara , Mikio Suzuki , Yoshinobu Yanagawa , Hiroshi Iwasaki , Nobuhide Miyachi
发明人： Yoshio Ohara , Mikio Suzuki , Yoshinobu Yanagawa , Hiroshi Iwasaki , Nobuhide Miyachi
IPC分类号： C07B57/00 , C07D215/14 , C07D405/06 , C07D215/04
CPC分类号： C07D405/06 , C07D215/14
摘要： A diastereomer salt of optically active quinolinemevalonic acid of the formula ((-)I.(+)II): ##STR1##
摘要翻译：式（（ - ）I。（+）II）的光学活性喹啉酮戊酸的非对映异构体盐：（（ - ）I。（+）II）

26. 发明授权

US5405792A Method of manufacturing schottky barrier gate type fet 失效
标题翻译：制造肖特基势垒栅型的方法
公开(公告)号：US5405792A
公开(公告)日：1995-04-11
申请号：US941151
申请日：1992-09-04
申请人： Takeshi Nogami , Hiroshi Iwasaki
发明人： Takeshi Nogami , Hiroshi Iwasaki
IPC分类号： H01L21/266 , H01L21/338 , H01L21/306 , H01L21/44
CPC分类号： H01L29/66878 , H01L21/266 , Y10S148/14
摘要： The method of manufacturing the SB FET according to the present invention includes a first step of forming a refractory metal film on a semiconductor substrate, a second step of forming a first ion-implanted region within the semiconductor substrate, by an ion implantation process, a third step, independent of the second step, of forming second and third ion implantation regions in the semiconductor substrate by an ion implantation process during which impurity ions pass through the first film, with the second and third ion implantation regions being adjacent to the first ion implanted region. A fourth step of forming a channel region, source region and drain region by annealing to activate said first, second, and third ion implanted regions using the first film as a protective film, and bringing the first film in Schottky contact with the channel region, a fifth step of forming a Schottky gate electrode in Schottky contact with the channel region by patterning the first film after the channel, source and drain regions have been formed, with the first film being selectively maintained to prevent exposure of the channel region underlying the Schottky gate electrode, and a sixth step of forming a second film made of a refractory metal or a refractory metal compound on the first film forming a portion of said Schottky gate electrode.
摘要翻译：根据本发明的制造SB FET的方法包括在半导体衬底上形成难熔金属膜的第一步骤，通过离子注入工艺在半导体衬底内形成第一离子注入区域的第二步骤，第三步，独立于第二步骤，通过离子注入工艺在半导体衬底中形成第二和第三离子注入区，在该过程中，杂质离子通过第一膜，第二和第三离子注入区与第一离子相邻植入区域。通过退火形成沟道区域，源极区域和漏极区域的第四步骤，以使用第一膜膜作为保护膜来激活所述第一，第二和第三离子注入区域，并使第一膜片与沟道区域肖特基接触，通过在沟道，源极和漏极区域形成之后对第一膜进行构图而形成肖特基接触的肖特基栅电极的第五步骤，其中第一膜被选择性地保持以防止肖特基下方的沟道区域的暴露栅电极，以及在形成所述肖特基栅电极的一部分的第一膜上形成由难熔金属或难熔金属化合物制成的第二膜的第六步骤。

27. 发明授权

US5187111A Method of manufacturing Schottky barrier gate FET 失效
标题翻译：制造肖特基势垒栅极的方法
公开(公告)号：US5187111A
公开(公告)日：1993-02-16
申请号：US688711
申请日：1991-04-23
申请人： Takeshi Nogami , Hiroshi Iwasaki
发明人： Takeshi Nogami , Hiroshi Iwasaki
IPC分类号： H01L21/266 , H01L21/338
CPC分类号： H01L29/66878 , H01L21/266 , Y10S148/14
摘要： The method of manufacturing the SB FET according to the present invention includes a first step of forming a first WN metal film on a GaAs substrate, a second step of forming a first ion-implanted region within the GaAs substrate, by ion implantation of n-type impurities, a third step of forming a second Mo metal film, a fourth step of forming second and third ion-implanted regions adjacent to said first ion-implanted region, within the GaAs substrate, and a fifth step of activating said first, second, and third ion-implanted regions. In the ion implantation of the second step, impurity ions are implanted into the GaAs substrate, through the first metal film. In the fifth step, the first metal film serves as a protective film during the activation of the first, second, and third ion-implanted regions.
摘要翻译：根据本发明的制造SB FET的方法包括在GaAs衬底上形成第一WN金属膜的第一步骤，通过n型离子注入形成GaAs衬底内的第一离子注入区域的第二步骤，形成第二Mo金属膜的第三步骤，在GaAs衬底内形成与所述第一离子注入区域相邻的第二和第三离子注入区域的第四步骤，以及第五步骤，激活所述第一，第二，和第三离子注入区域。在第二步的离子注入中，通过第一金属膜将杂质离子注入到GaAs衬底中。在第五步骤中，第一金属膜在第一，第二和第三离子注入区域的激活期间用作保护膜。

28. 发明授权

US5148651A Unwrapping apparatus with swing arms and grippers 失效
标题翻译：具有摆臂和夹具的包装装置
公开(公告)号：US5148651A
公开(公告)日：1992-09-22
申请号：US771629
申请日：1991-10-03
申请人： Tadao Masuda , Masahiro Tsukuda , Shigeru Doiura , Kaoru Kawanishi , Hiroshi Iwasaki
发明人： Tadao Masuda , Masahiro Tsukuda , Shigeru Doiura , Kaoru Kawanishi , Hiroshi Iwasaki
IPC分类号： B65B69/00
CPC分类号： B65B69/0033
摘要： An unwrapping apparatus for unwrapping a palletized and stretch-wrapped load, the apparatus enables the prevention of the articles from falling off and easy disposal of the used stretchable film. The apparatus comprises first and second upright frames between which a load to be unwrapped is conveyed, the first upright frame including two lower grippers for gripping a lower edge of the stretchable film, and an elevated cutter unit having two pairs of pinch rollers and a heat cutter. The second upright frame includes a carriage having a platen to press the top of the load to be unwrapped and a pair of swing arms symmetrically arranged on either side of the platen and extending toward the first upright frame. Upper grippers are secured to the swing arms, respectively. The stretchable film can be gripped during the cutting and unwrapping of the load to maintain tension and prevent the articles in the load from falling off. In addition, the used stretchable film can be discharged in a compressed, compact form.
摘要翻译：用于展开堆垛和拉伸包裹的负载的展开装置，该装置能够防止物品脱落并易于处理所使用的可拉伸膜。该装置包括第一和第二直立框架，在该框架之间传送要展开的负载物，第一直立框架包括用于夹紧可拉伸膜的下边缘的两个下夹具和具有两对夹送辊和热量的升高的切割器单元刀具。第二直立框架包括滑架，该滑架具有用于按压要打开的负载的顶部的压板和对称地布置在压板的任一侧上且朝向第一直立框架延伸的一对摆臂。上夹具分别固定在摆臂上。可以在切割和拆卸负载期间夹持伸缩膜，以保持张力，并防止负载中的物品脱落。此外，所使用的可拉伸膜可以以压缩，紧凑的形式排出。

29. 发明授权

US5026708A Pyrimidine type mevalonolactones 失效
标题翻译：嘧啶型甲羟戊酸内酯
公开(公告)号：US5026708A
公开(公告)日：1991-06-25
申请号：US243468
申请日：1988-09-12
申请人： Yoshihiro Fujikawa , Mikio Suzuki , Hiroshi Iwasaki , Mitsuaki Sakashita , Masaki Kitahara
发明人： Yoshihiro Fujikawa , Mikio Suzuki , Hiroshi Iwasaki , Mitsuaki Sakashita , Masaki Kitahara
IPC分类号： C07D239/26 , C07D405/06
CPC分类号： C07D239/26 , C07D405/06
摘要： A compound of the formula: ##STR1## wherein R.sup.1 and R.sup.2 are independently hydrogen, C.sub.1-6 alkyl, C.sub.3-6 cycloalkyl, C.sub.1-3 alkoxy, n-butoxy, i-butoxy, sec-butoxy, R.sup.5 R.sup.6 N-- (wherein R.sup.5 and R.sup.6 are independently hydrogen or C.sub.1-3 alkyl), trifluoromethyl, trifluoromethoxy, difluoromethoxy, fluoro, chloro, bromo, phenyl, phenoxy, benzyloxy, hydroxy, trimethylsilyloxy, diphenyl-t-butylsilyloxy, hydroxymethyl or --O(CH.sub.2).sub.l OR.sup.15 (wherein R.sup.15 is hydrogen or C.sub.1-3 alkyl, and l is 1, 2 or 3); or when located at the ortho position to each other, R.sup.1 and R.sup.2 together form --CH.dbd.CH--CH.dbd.CH-- or methylene dioxy; Y is --CH.sub.2 --, --CH.sub.2 CH.sub.2 --, --CH.dbd.CH--, --CH.sub.2 --CH.dbd.CH-- or --CH.dbd.CH--CH.sub.2 --; Z is --Q--CH.sub.2 WCH.sub.2 --CO.sub.2 R.sup.12, ##STR2## (wherein Q is --C(O)--, --C(OR.sup.13).sub.2 -- or --CH(OH)--; W is --C(O)--, --C(OR.sup.13).sub.2 -- or --C(R.sup.11) (OH)--; R.sup.11 is hydrogen or C.sub.1-3 alkyl; R.sup.12 is hydrogen or R.sup.14 (wherein R.sup.14 is physiologically hydrolyzable alkyl or M (wherein M is NH.sub.4, sodium, potassium, 1/2 calcium or a hydrate of lower alkylamine, di-lower alkylamine or tri-lower alkylamine)); two R.sup.13 are independently primary or secondary C.sub.1-6 alkyl; or two R.sup.13 together form --(CH.sub.2).sub.2 -- or --(CH.sub.2).sub.3 --; R.sup.16 and R.sup.17 are independently hydrogen or C.sub.1-3 alkyl; R.sup.3 is hydrogen, C.sub.1-6 alkyl, C.sub.2-3 alkenyl, C.sub.3-6 cycloalkyl, ##STR3## (wherein R.sup.7 is hydrogen, C.sub.1-4 alkyl, C.sub.1-3 alkoxy, fluoro, chloro, bromo or trifluoromethyl), phenyl--(CH.sub.2).sub.m -- (wherein m is 1, 2 or 3), --(CH.sub.2).sub.n CH(CH.sub.3)--phenyl or phenyl--(CH.sub.2).sub.n CH(CH.sub.3)-- (wherein n is 0, 1 or 2): R.sup.4 is C.sub.1-8 alkyl, C.sub.3-7 cycloalkyl, .alpha.- or .beta.-naphthyl, 2--, 3-- or 4-pyridyl, ##STR4## (wherein R.sup.8, R.sup.9 and R.sup.10 are independently hydrogen, C.sub.1-4 alkyl, C.sub.1-8 alkoxy, C.sub.1-3 alkylthio, chloro, bromo, fluoro, --NR.sup.18 R.sup.19 (wherein R.sup.18 and R.sup.19 are independently C.sub.1-3 alkyl), trichloromethyl, trifluoromethyl, trifluoromethoxy, difluoromethoxy, phenoxy, benzyloxy, hydroxy, trimethylsilyloxy, diphenyl-t-butylsilyloxy, hydroxymethyl or --O(CH.sub.2).sub.k OR.sup.20 (wherein R.sup.20 is hydrogen or C.sub.1-3 alkyl, and k is 1, 2 or 3); when R.sup.10 is hydrogen and when located at the ortho position to each other, R.sup.8 and R.sup.9 together form --OC(R.sup.23) (R.sup.24)O-- (wherein R.sup.23 and R.sup.24 are independently hydrogen or C.sub.1-3 alkyl)), ##STR5## (wherein R.sup.25 is hydrogen, C.sub.1-4 alkyl, C.sub.1-3 alkoxy, chloro, bromo, or fluoro) or C.sub.1-3 alkyl substituted by 1 member selected from the group consisting of ##STR6## (wherein R.sup.8, R.sup.9 and R.sup.10 are as defined above) and naphthyl and by 0, 1 or 2 members selected from the group consisting of C.sub.1-8 alkyl.

30. 发明授权

US4965220A Method of manufacturing a semiconductor integrated circuit device comprising an MOS transistor and a bipolar transistor 失效
标题翻译：制造包括MOS晶体管和双极晶体管的半导体集成电路器件的方法
公开(公告)号：US4965220A
公开(公告)日：1990-10-23
申请号：US306393
申请日：1989-02-06
申请人： Hiroshi Iwasaki
发明人： Hiroshi Iwasaki
IPC分类号： H01L21/76 , H01L21/225 , H01L21/331 , H01L21/8249 , H01L27/06 , H01L29/73 , H01L29/732
CPC分类号： H01L21/2257 , H01L21/8249 , H01L27/0623 , Y10S148/01 , Y10S148/032 , Y10S148/037 , Y10S148/038 , Y10S148/082 , Y10S148/123 , Y10S148/124
摘要： A semiconductor integrated circuit device is disclosed which comprises a bipolar transistor and a field effect transistor, in which a gate electrode of the field effect transistor and a collector electrode of the bipolar transistor are formed from a common electrode layer of a high impurity concentration, and in which the collector region of the bipolar transistor comprises a region of a high impurity concentration having a conductivity type the same as that of the collector region of the bipolar transistor.

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