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1. 发明授权

US5405792A Method of manufacturing schottky barrier gate type fet 失效
标题翻译：制造肖特基势垒栅型的方法
公开(公告)号：US5405792A
公开(公告)日：1995-04-11
申请号：US941151
申请日：1992-09-04
申请人： Takeshi Nogami , Hiroshi Iwasaki
发明人： Takeshi Nogami , Hiroshi Iwasaki
IPC分类号： H01L21/266 , H01L21/338 , H01L21/306 , H01L21/44
CPC分类号： H01L29/66878 , H01L21/266 , Y10S148/14
摘要： The method of manufacturing the SB FET according to the present invention includes a first step of forming a refractory metal film on a semiconductor substrate, a second step of forming a first ion-implanted region within the semiconductor substrate, by an ion implantation process, a third step, independent of the second step, of forming second and third ion implantation regions in the semiconductor substrate by an ion implantation process during which impurity ions pass through the first film, with the second and third ion implantation regions being adjacent to the first ion implanted region. A fourth step of forming a channel region, source region and drain region by annealing to activate said first, second, and third ion implanted regions using the first film as a protective film, and bringing the first film in Schottky contact with the channel region, a fifth step of forming a Schottky gate electrode in Schottky contact with the channel region by patterning the first film after the channel, source and drain regions have been formed, with the first film being selectively maintained to prevent exposure of the channel region underlying the Schottky gate electrode, and a sixth step of forming a second film made of a refractory metal or a refractory metal compound on the first film forming a portion of said Schottky gate electrode.
摘要翻译：根据本发明的制造SB FET的方法包括在半导体衬底上形成难熔金属膜的第一步骤，通过离子注入工艺在半导体衬底内形成第一离子注入区域的第二步骤，第三步，独立于第二步骤，通过离子注入工艺在半导体衬底中形成第二和第三离子注入区，在该过程中，杂质离子通过第一膜，第二和第三离子注入区与第一离子相邻植入区域。通过退火形成沟道区域，源极区域和漏极区域的第四步骤，以使用第一膜膜作为保护膜来激活所述第一，第二和第三离子注入区域，并使第一膜片与沟道区域肖特基接触，通过在沟道，源极和漏极区域形成之后对第一膜进行构图而形成肖特基接触的肖特基栅电极的第五步骤，其中第一膜被选择性地保持以防止肖特基下方的沟道区域的暴露栅电极，以及在形成所述肖特基栅电极的一部分的第一膜上形成由难熔金属或难熔金属化合物制成的第二膜的第六步骤。

2. 发明授权

US5187111A Method of manufacturing Schottky barrier gate FET 失效
标题翻译：制造肖特基势垒栅极的方法
公开(公告)号：US5187111A
公开(公告)日：1993-02-16
申请号：US688711
申请日：1991-04-23
申请人： Takeshi Nogami , Hiroshi Iwasaki
发明人： Takeshi Nogami , Hiroshi Iwasaki
IPC分类号： H01L21/266 , H01L21/338
CPC分类号： H01L29/66878 , H01L21/266 , Y10S148/14
摘要： The method of manufacturing the SB FET according to the present invention includes a first step of forming a first WN metal film on a GaAs substrate, a second step of forming a first ion-implanted region within the GaAs substrate, by ion implantation of n-type impurities, a third step of forming a second Mo metal film, a fourth step of forming second and third ion-implanted regions adjacent to said first ion-implanted region, within the GaAs substrate, and a fifth step of activating said first, second, and third ion-implanted regions. In the ion implantation of the second step, impurity ions are implanted into the GaAs substrate, through the first metal film. In the fifth step, the first metal film serves as a protective film during the activation of the first, second, and third ion-implanted regions.
摘要翻译：根据本发明的制造SB FET的方法包括在GaAs衬底上形成第一WN金属膜的第一步骤，通过n型离子注入形成GaAs衬底内的第一离子注入区域的第二步骤，形成第二Mo金属膜的第三步骤，在GaAs衬底内形成与所述第一离子注入区域相邻的第二和第三离子注入区域的第四步骤，以及第五步骤，激活所述第一，第二，和第三离子注入区域。在第二步的离子注入中，通过第一金属膜将杂质离子注入到GaAs衬底中。在第五步骤中，第一金属膜在第一，第二和第三离子注入区域的激活期间用作保护膜。

3. 发明授权

US08512590B2 Rotating machine, bonded magnet, magnet roll, and method for producing sintered ferrite magnet 有权
标题翻译：旋转机，粘结磁体，磁辊，以及烧结铁氧体磁铁的制造方法
公开(公告)号：US08512590B2
公开(公告)日：2013-08-20
申请号：US13211422
申请日：2011-08-17
申请人： Takashi Takami , Hiroshi Iwasaki , Yoshinori Kobayashi , Naoki Mochi , Ryuji Gotoh
发明人： Takashi Takami , Hiroshi Iwasaki , Yoshinori Kobayashi , Naoki Mochi , Ryuji Gotoh
IPC分类号： H01F1/11 , H02K15/03
CPC分类号： H01F7/02 , C01G49/0018 , C01G49/009 , C01G51/006 , C01P2002/52 , C01P2004/03 , C01P2004/20 , C01P2004/54 , C01P2004/62 , C01P2006/10 , C01P2006/42 , C01P2006/80 , C04B35/2633 , C04B35/2641 , C04B35/62204 , C04B35/6261 , C04B35/62675 , C04B35/6268 , C04B2235/3201 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3227 , C04B2235/3241 , C04B2235/3262 , C04B2235/3275 , C04B2235/3277 , C04B2235/3279 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/444 , C04B2235/5436 , C04B2235/5445 , C04B2235/605 , C04B2235/656 , C04B2235/6585 , C04B2235/72 , C04B2235/767 , C04B2235/77 , C04B2235/785 , C04B2235/787 , C04B2235/788 , H01F1/11 , H01F41/0266 , H01F41/028
摘要： A method for producing a sintered ferrite magnet having an M-type ferrite structure and represented by: Ca1−x−yRxBayFe2n-zCoz, (by atomic ratio), where 0.3≦1−x−y≦0.65, 0.2≦x≦0.65, 0.001≦y≦0.2, 0.03≦z≦0.65, 4≦n≦7, and 1−x−y>y. The method includes mixing a Ca compound, an R element compound, a Ba compound, an iron compound and a Co compound as starting materials; calcining the starting materials to obtain calcined bodies; pulverizing the calcined bodies to obtain a calcined powder; providing recycled materials having an M-type ferrite structure and being represented by the above formula; pulverizing the recycled materials to obtain a recycled material powder; mixing the recycled material powder with the calcined powder to form a moldable material; molding the moldable material to obtain green bodies; and sintering the green bodies to obtain the sintered ferrite magnet.
摘要翻译：一种具有M型铁氧体结构的烧结铁氧体磁体的制造方法，其特征在于，以Ca1-x-yRxBayFe2n-zCoz（原子比）表示，其中0.3≤1-xy≤0.65，0.2≤x≤0.65，0.001 @ y@0.2，0.03 @ z @ 0.65,4 @ n @ 7和1-xy> y。该方法包括混合Ca化合物，R元素化合物，Ba化合物，铁化合物和Co化合物作为起始材料; 煅烧原料以获得煅烧体; 粉碎煅烧体以获得煅烧粉末; 提供具有M型铁氧体结构并由上式表示的再循环材料; 粉碎回收材料以获得再生材料粉末; 将再生材料粉末与煅烧粉末混合以形成可模制材料; 模制可模制材料以获得生坯体; 并烧结生坯以获得烧结的铁氧体磁体。

4. 发明申请

US20120196824A1 THERAPEUTIC AGENT FOR CEREBRAL INFARCTION 审中-公开
标题翻译：治疗神经损伤的治疗药物
公开(公告)号：US20120196824A1
公开(公告)日：2012-08-02
申请号：US13501074
申请日：2010-10-08
申请人： Akira Nakao , Hiroko Suzuki , Ryo Tatsumi , Tomofumi Setsuta , Maki Seki , Hiroshi Iwasaki , Minoru Tanaka
发明人： Akira Nakao , Hiroko Suzuki , Ryo Tatsumi , Tomofumi Setsuta , Maki Seki , Hiroshi Iwasaki , Minoru Tanaka
IPC分类号： A61K31/55 , A61K31/437 , A61K31/4162 , A61K31/427 , A61K31/423 , A61K31/405 , A61K31/422 , A61K31/4166 , A61K31/4439 , A61K31/501 , A61K31/506 , A61K31/416 , A61K31/433 , A61K31/16 , A61K31/4965 , A61P25/00 , A61K31/706 , A61K31/4245
CPC分类号： C07D209/44 , C07C237/10 , C07C2602/08 , C07C2602/10 , C07D209/46 , C07D271/06 , C07D295/22 , C07D401/12 , C07D403/12 , C07D405/12 , C07D409/12 , C07D413/12 , C07D413/14 , C07D417/12 , C07D487/04 , C07D495/04
摘要： The invention provides a therapeutic drug for ischemic stroke. The therapeutic drug has the formula (I) wherein each symbol is as defined herein, or a pharmacologically acceptable salt thereof, or a solvate thereof, as an active ingredient.
摘要翻译：本发明提供了用于缺血性卒中的治疗药物。治疗药物具有式（I），其中每个符号如本文所定义，或其药理学上可接受的盐或其溶剂合物作为活性成分。

5. 发明授权

US08021567B2 Oxide-type, magnetic material and it's production method, and sintered ferrite magnet and it's production method 有权
标题翻译：氧化物型，磁性材料及其制备方法，烧结铁氧体磁体及其制备方法
公开(公告)号：US08021567B2
公开(公告)日：2011-09-20
申请号：US12902220
申请日：2010-10-12
申请人： Takashi Takami , Hiroshi Iwasaki , Naoki Mochi
发明人： Takashi Takami , Hiroshi Iwasaki , Naoki Mochi
IPC分类号： H01F1/11
CPC分类号： H01F1/11 , C04B35/2633 , C04B35/2641 , C04B35/6262 , C04B35/6268 , C04B35/62685 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3275 , C04B2235/3277 , C04B2235/3409 , C04B2235/3418 , C04B2235/5292 , C04B2235/5436 , C04B2235/5445 , C04B2235/5463 , C04B2235/605 , C04B2235/656 , C04B2235/6585 , C04B2235/72 , C04B2235/767 , C04B2235/77 , C04B2235/785 , C04B2235/786 , C04B2235/788 , H01F41/0273 , Y10T428/2982
摘要： A sintered ferrite magnet having an M-type ferrite structure and comprising Ca, an R element which is at least one rare earth element indispensably including La, Ba, Fe and Co as indispensable elements, which is represented by Ca1-x-yRxBayFe2n-zCoz, wherein (1−x−y), x, y, z and n are numbers representing the amounts of Ca, the R element, Ba and Co and a molar ratio, meeting 0.2≦x≦0.65, 0.001≦y≦0.2, 0.03≦z≦0.65, and 4≦n≦7.
摘要翻译：一种具有M型铁氧体结构并包含Ca，R元素的烧结铁氧体磁体，其是至少一种不可缺少的包含La，Ba，Fe和Co的稀土元素，作为不可缺少的元素，由Ca1-x-yRxBayFe2n-zCoz ，其中（1-x-y），x，y，z和n是表示Ca，R元素，Ba和Co的量和摩尔比的数字，满足0.2＆nlE; x＆nlE; 0.65,0.001＆nlE; y＆nlE; 0.2，0.03＆nlE; z＆nlE; 0.65和4＆nlE; n＆nlE; 7。

6. 发明申请

US20110034440A1 HOMOCYSTEINE SYNTHASE INHIBITOR 有权
标题翻译：合成酶抑制剂
公开(公告)号：US20110034440A1
公开(公告)日：2011-02-10
申请号：US12937187
申请日：2009-04-10
申请人： Akira Nakao , Hiroko Suzuki , Ryo Tatsumi , Maki Seki , Minoru Tanaka , Tomofumi Setsuta , Hiroshi Iwasaki
发明人： Akira Nakao , Hiroko Suzuki , Ryo Tatsumi , Maki Seki , Minoru Tanaka , Tomofumi Setsuta , Hiroshi Iwasaki
IPC分类号： A61K31/55 , C07D209/44 , A61K31/4035 , A61P9/10 , C07C237/12 , A61K31/165 , C07D295/32 , A61K31/495 , C07D413/12 , A61K31/4245 , C07D413/14 , A61K31/454 , C07D403/12 , A61K31/4196 , A61K31/422 , C07D417/12 , A61K31/427 , A61K31/416 , A61K31/501 , C07D487/04
CPC分类号： C07D209/44 , C07C237/10 , C07C255/60 , C07C2602/08 , C07D271/06 , C07D295/22 , C07D401/12 , C07D403/12 , C07D405/12 , C07D409/12 , C07D413/12 , C07D417/12
摘要： The invention provides a homocysteine synthase inhibitor useful for the prophylaxis or treatment of diseases involving homocysteine synthase. The homocysteine synthase inhibitor is a compound of the formula (I) wherein each symbol is as defined herein, or a pharmacologically acceptable salt thereof, or a solvate thereof.
摘要翻译：本发明提供了可用于预防或治疗涉及同型半胱氨酸合酶的疾病的同型半胱氨酸合成酶抑制剂。同型半胱氨酸合成酶抑制剂是式（I）的化合物，其中每个符号如本文所定义，或其药理学上可接受的盐或其溶剂合物。

7. 发明申请

US20080310668A1 SPEAKER RETENTION BRACKET AND METHOD 有权
标题翻译：扬声器保持支架和方法
公开(公告)号：US20080310668A1
公开(公告)日：2008-12-18
申请号：US11763774
申请日：2007-06-15
申请人： Jeff Koch , Hiroshi Iwasaki
发明人： Jeff Koch , Hiroshi Iwasaki
IPC分类号： H04R1/02
CPC分类号： H04R1/026 , B60R11/0217 , B60R2011/0024 , H04R2499/13
摘要： An audio speaker bracket for use in passenger vehicles and a method for installing the speaker to a mounting panel using at feast one suspension member. The method permits the speaker to be temporarily supported by a mounting panel while secure attachment of the bracket to the mounting panel is completed.
摘要翻译：用于乘客车辆的音频扬声器支架以及使用一个悬挂构件将扬声器安装到安装面板的方法。该方法允许扬声器由安装面板临时支撑，同时完成将支架固定到安装面板上。

8. 发明授权

US07137012B1 Storage medium and contents protection method using the storage medium 有权
标题翻译：存储介质和内容保护方法使用存储介质
公开(公告)号：US07137012B1
公开(公告)日：2006-11-14
申请号：US09594011
申请日：2000-06-15
申请人： Tooru Kamibayashi , Hisashi Yamada , Hiroshi Iwasaki , Masafumi Tamura , Yasuhiro Ishibashi , Taku Kato , Makoto Tatebayashi , Shunji Harada , Noboru Katsuta
发明人： Tooru Kamibayashi , Hisashi Yamada , Hiroshi Iwasaki , Masafumi Tamura , Yasuhiro Ishibashi , Taku Kato , Makoto Tatebayashi , Shunji Harada , Noboru Katsuta
IPC分类号： G06F12/14
CPC分类号： G06F21/78 , G06F2221/2121 , G06F2221/2141 , H04L9/3268
摘要： A revocation list is registered a public ROM area. The revocation list designates at least one electronic device in which use of the storage medium by the designated electronic device is to be revoked. A controller receives from the electronic device which attempts to access, identification information indicative of the electronic device, and checks whether identification information corresponding to the received identification information is contained in the revocation list, thereby determining whether or not use of the storage medium by the electronic device which attempts to access should be revoked.
摘要翻译：撤销列表注册一个公共ROM区域。撤销列表指定至少一个电子设备，其中指定的电子设备的存储介质的使用将被撤销。控制器从尝试访问的电子设备接收指示电子设备的识别信息，并且检查与所接收的标识信息相对应的识别信息是否包含在撤销列表中，从而确定是否使用存储介质应该撤销尝试访问的电子设备。

9. 发明授权

US07025194B2 Article moving apparatus and direction changing apparatus for sticks 失效
标题翻译：物品移动装置和方向改变装置
公开(公告)号：US07025194B2
公开(公告)日：2006-04-11
申请号：US10652490
申请日：2003-09-02
申请人： Tadashi Takigawa , Hiroshi Iwasaki
发明人： Tadashi Takigawa , Hiroshi Iwasaki
IPC分类号： B65G47/24
CPC分类号： B65G47/90 , B65G47/252
摘要： A motor has its rotating shaft fixed by a fixing member so as to be inclined at an angle of θ to the horizontal direction. A supporting member is attached to the rotating shaft of the motor. A plurality of accommodating units are distributed at equal spacing along the circumference, centered on the rotating shaft of the motor, of the supporting member. A pair of peripheral surface members in each of the accommodating units is attached to the fixing member so as to be capable of freely opening and closing by a supporting shaft, and has an approximately square columnar shape in its closed state. An opening at one end of the pair of peripheral surface members having the approximately square columnar shape is opened, and a bottom surface member is arranged on an opening at the other end thereof. Each of the accommodating units is attached to the supporting member such that the supporting shaft is inclined at an angle of α to the rotating shaft of the motor.
摘要翻译：电动机的旋转轴由固定部件固定，以与水平方向成θ角倾斜。支撑构件附接到电动机的旋转轴。多个容纳单元沿着圆周以相等的间隔分布在中心于电动机的旋转轴的支撑构件上。每个容纳单元中的一对周边表面构件被附接到固定构件，以便能够由支撑轴自由地打开和关闭，并且在其闭合状态下具有大致正方形的柱状形状。打开具有大致正方形柱状的一对外周面构件的一端的开口，在其另一端的开口部配置有底面构件。每个容纳单元附接到支撑构件，使得支撑轴以与电动机的旋转轴成α角的方式倾斜。

10. 发明申请

US20050167809A1 Storage apparatus, card type string apparatus, and electronic apparatus 有权
标题翻译：存储装置，卡式串装置和电子装置
公开(公告)号：US20050167809A1
公开(公告)日：2005-08-04
申请号：US11091773
申请日：2005-03-29
申请人： Hiroshi Iwasaki
发明人： Hiroshi Iwasaki
IPC分类号： H01L23/31 , H01L23/498 , H01L21/48 , H01L29/73
CPC分类号： G06K19/07739 , G06K19/07743 , H01L23/3121 , H01L23/49855 , H01L24/48 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/4847 , H01L2224/48472 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01079 , H01L2924/15153 , H01L2924/15165 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： A storage apparatus 10 is disclosed, that comprises a wiring substrate 11 having a first surface and a second surface, a flat type external connection terminal 12a disposed on the first surface of the wiring substrate 11, a semiconductor device 14 disposed on the second surface of the wiring substrate 11 and having a connection terminal 14a connected to the flat type external connection terminal 12a, a molding resin 15 for coating the semiconductor device 14 on the second surface of the wiring substrate 11, a card type supporting frame 10a having a concave portion or a hole portion fitting the wiring substrate 11, the semiconductor device 14, and the molding resin 15 in such a manner that the flat type external connection terminal 12a is exposed to the first surface of the wiring substrate 11, and adhesive resin a adhering integrally the flat type external connection terminal 12a, the wiring substrate 11, the semiconductor device 14, the molding resin 15, and the card type supporting frame 10a. In addition, the storage apparatus 10 can be combined with a card type supporting means 21 that supports detachably with the flat type external connection terminal 12a exposed to one of the surfaces so as to be used as a card type storage apparatus 20 having bigger size.
摘要翻译：公开了一种存储装置10，其包括具有第一表面和第二表面的布线基板11，布置在布线基板11的第一表面上的平面型外部连接端子12a，设置在第二表面上的半导体装置14 的布线基板11，并且具有连接到扁平型外部连接端子12a的连接端子14a，用于在布线基板11的第二表面上涂覆半导体器件14的模制树脂15，卡式支撑框架10a 具有将布线基板11，半导体装置14和成型树脂15嵌合的凹部或孔部，使得平面型外部连接端子12a暴露于布线基板11的第一面，并且平面型外部连接端子12a，布线基板11，半导体器件14，成型树脂15和卡片型号 e支撑框架10a。此外，存储装置10可以与能够与露出到其中一个表面的平面型外部连接端子12a可拆卸地支撑的卡式支撑装置21组合，以用作具有较大尺寸的卡式存储装置20 。

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