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21. 发明授权

US08865396B2 Developing method and developing apparatus 有权
标题翻译：开发方法和开发设备
公开(公告)号：US08865396B2
公开(公告)日：2014-10-21
申请号：US12472728
申请日：2009-05-27
申请人： Hirofumi Takeguchi , Taro Yamamoto , Kousuke Yoshihara
发明人： Hirofumi Takeguchi , Taro Yamamoto , Kousuke Yoshihara
IPC分类号： G03C5/18 , G03C5/26 , G03F7/30
CPC分类号： G03F7/162 , G03F7/3021
摘要： A developing method including a developing step in which, while a wafer horizontally held by a spin chuck is being rotated, the wafer is developed by supplying a developer onto a surface of the wafer, wherein provided before the developing step is a pre-wetting step in which, simultaneously with the developer being supplied from a first nozzle that is located on a position near a central part of the surface of the rotating wafer, a deionized water as a second liquid is supplied from a second nozzle that is located on a position nearer to an outer peripheral part of the wafer than the first nozzle, to thereby spread out the developer in the rotating direction of the wafer by a wall that is formed by the deionized water flowing to the outer peripheral side of the wafer with the rotation of the wafer.
摘要翻译：一种显影方法，其包括显影步骤，其中当由旋转卡盘水平保持的晶片正在旋转时，通过将显影剂供应到晶片的表面上来显影晶片，其中在显影步骤之前提供预润湿步骤其中与来自位于旋转晶片表面的中心附近的位置的第一喷嘴一起供给显影剂，作为第二液体的去离子水从位于位置上的第二喷嘴供给比第一喷嘴更靠近晶片的外周部分，从而通过由去离子水流到晶片的外周侧而形成的壁沿着晶片的旋转方向展开显影剂晶圆。

22. 发明授权

US08029624B2 Rinse method and developing apparatus 有权
标题翻译：冲洗方法和显影装置
公开(公告)号：US08029624B2
公开(公告)日：2011-10-04
申请号：US11602390
申请日：2006-11-21
申请人： Kousuke Yoshihara , Junji Nakamura , Hirofumi Takeguchi , Taro Yamamoto
发明人： Kousuke Yoshihara , Junji Nakamura , Hirofumi Takeguchi , Taro Yamamoto
IPC分类号： B08B7/04
CPC分类号： H01L21/67051 , H01L21/67253
摘要： A rinse method for rinsing a substrate having an exposure pattern thereon developed includes presetting conditions for a rinse process according to surface states of the substrate, measuring a surface state of the substrate, selecting a corresponding condition for the rinse process based on the measured surface state of the substrate, and performing the rinse process under the selected condition.
摘要翻译：用于漂洗其上具有曝光图案的基板的冲洗方法包括根据基板的表面状态的冲洗过程的预设条件，测量基板的表面状态，基于测量的表面状态选择冲洗过程的相应条件并在所选择的条件下进行冲洗过程。

23. 发明申请

US20100323307A1 DEVELOPING APPARATUS AND METHOD 审中-公开
标题翻译：开发设备和方法
公开(公告)号：US20100323307A1
公开(公告)日：2010-12-23
申请号：US12869446
申请日：2010-08-26
申请人： Taro Yamamoto , Atsushi Ookouchi , Hirofumi Takeguchi , Kousuke Yoshihara
发明人： Taro Yamamoto , Atsushi Ookouchi , Hirofumi Takeguchi , Kousuke Yoshihara
IPC分类号： G03F7/20
CPC分类号： H01L21/6715 , G03F7/3028
摘要： A developing apparatus for developing a substrate whose surface is coated with a coating solution and then exposed includes a substrate supporting unit for horizontally supporting the substrate, a rotation driving mechanism for rotating the substrate supporting unit forwardly or backwardly with respect to a vertical axis, a developer nozzle, disposed to face a surface of the substrate supported by the substrate supporting unit, having a strip-shaped injection opening extended along a direction extending from a periphery of the substrate toward a central portion thereof, a moving unit for moving the developer nozzle from an outer portion of the substrate toward the central portion thereof, and a controller for controlling operations such that while the substrate is rotated forwardly by the rotation driving mechanism, a developer is supplied through the injection opening to the surface of the substrate by moving the developer nozzle and, then, the substrate is rotated backwardly by the rotation driving mechanism.
摘要翻译：用于显影表面被涂布溶液然后露出的基板的显影装置包括用于水平支撑基板的基板支撑单元，用于相对于垂直轴向前或向后旋转基板支撑单元的旋转驱动机构，显影剂喷嘴，设置成面对由基板支撑单元支撑的基板的表面，具有沿着从基板的周边朝向其中心部分延伸的方向延伸的条形喷射口;移动单元，用于移动显影剂喷嘴从基板的外部朝向其中央部分，以及控制器，用于控制操作，使得当基板通过旋转驱动机构向前旋转时，通过将喷射开口移动到基板的表面，将显影剂供应到基板的表面显影剂喷嘴，然后基板由r向后旋转驾驶机制

24. 发明授权

US07841787B2 Rinsing method, developing method, developing system and computer-read storage medium 有权
标题翻译：冲洗方法，开发方法，开发系统和计算机读取存储介质
公开(公告)号：US07841787B2
公开(公告)日：2010-11-30
申请号：US11554192
申请日：2006-10-30
申请人： Hirofumi Takeguchi , Junji Nakamura , Kousuke Yoshihara
发明人： Hirofumi Takeguchi , Junji Nakamura , Kousuke Yoshihara
IPC分类号： G03D5/00 , G03C1/00 , G03C5/18 , G03C5/26 , B08B7/00 , B05D3/12
CPC分类号： G03D5/00 , B08B3/04 , H01L21/67051
摘要： The present invention provides a rinsing method capable of satisfactorily rinsing the surface of a resist film regardless of the condition of the surface of the resist film so that development defects caused by residuals produced by development may be reduced. A rinsing method of rinsing a substrate processed by a developing process for developing an exposed pattern comprises the steps of discharging a rinsing liquid onto a central part of the substrate processed by the developing process and coated with a developer puddle while the substrate is stopped or rotated (step 5), stopping discharging the rinsing liquid in a state where the developer puddle remains at least in a peripheral part of the substrate (step 6), and rotating the substrate at a high rotating speed to shake the developer remaining on the substrate off the substrate together with the rinsing liquid (step 7).
摘要翻译：本发明提供了能够令人满意地冲洗抗蚀剂膜的表面的冲洗方法，而与抗蚀剂膜的表面的状态无关，从而可以减少由显影产生的残留物引起的显影缺陷。漂洗通过用于显影曝光图案的显影工艺处理的基材的冲洗方法包括以下步骤：将冲洗液体排出到通过显影过程处理的基材的中心部分上，并在基材停止或旋转时涂覆显影剂水坑（步骤5），在显影剂熔池至少保持在基板的周边部分的状态下停止排出冲洗液体（步骤6），并且以高转速旋转基板以摇动残留在基板上的显影剂基底与冲洗液一起（步骤7）。

25. 发明授权

US07806076B2 Developing apparatus and method 有权
标题翻译：开发设备和方法
公开(公告)号：US07806076B2
公开(公告)日：2010-10-05
申请号：US11201102
申请日：2005-08-11
申请人： Taro Yamamoto , Atsushi Ookouchi , Hirofumi Takeguchi , Kousuke Yoshihara
发明人： Taro Yamamoto , Atsushi Ookouchi , Hirofumi Takeguchi , Kousuke Yoshihara
IPC分类号： B05C11/10
CPC分类号： H01L21/6715 , G03F7/3028
摘要： A developing apparatus for developing a substrate whose surface is coated with a coating solution and then exposed includes a substrate supporting unit for horizontally supporting the substrate, a rotation driving mechanism for rotating the substrate supporting unit forwardly or backwardly with respect to a vertical axis, a developer nozzle, disposed to face a surface of the substrate supported by the substrate supporting unit, having a strip-shaped injection opening extended along a direction extending from a periphery of the substrate toward a central portion thereof, a moving unit for moving the developer nozzle from an outer portion of the substrate toward the central portion thereof, and a controller for controlling operations such that while the substrate is rotated forwardly by the rotation driving mechanism, a developer is supplied through the injection opening to the surface of the substrate by moving the developer nozzle and, then, the substrate is rotated backwardly by the rotation driving mechanism.
摘要翻译：用于显影表面被涂布溶液然后露出的基板的显影装置包括用于水平支撑基板的基板支撑单元，用于相对于垂直轴向前或向后旋转基板支撑单元的旋转驱动机构，显影剂喷嘴，设置成面对由基板支撑单元支撑的基板的表面，具有沿着从基板的周边朝向其中心部分延伸的方向延伸的条形喷射口;移动单元，用于移动显影剂喷嘴从基板的外部朝向其中央部分，以及控制器，用于控制操作，使得当基板通过旋转驱动机构向前旋转时，通过将喷射开口移动到基板的表面，将显影剂供应到基板的表面显影剂喷嘴，然后基板由r向后旋转驾驶机制

26. 发明申请

US20090130614A1 Development device and development method 有权
标题翻译：开发设备和开发方法
公开(公告)号：US20090130614A1
公开(公告)日：2009-05-21
申请号：US10584264
申请日：2004-12-24
申请人： Atsushi Ookouchi , Taro Yamamoto , Hirofumi Takeguchi , Hideharu Kyouda , Kousuke Yoshihara
发明人： Atsushi Ookouchi , Taro Yamamoto , Hirofumi Takeguchi , Hideharu Kyouda , Kousuke Yoshihara
IPC分类号： G03C5/00 , G03G15/10
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
摘要翻译：显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。此外，可以减少基板上的显影液的厚度，从而可以节省显影液。

27. 发明授权

US06811962B2 Method for developing processing and apparatus for supplying developing solution 失效
标题翻译：开发处理方法和提供显影液的设备
公开(公告)号：US06811962B2
公开(公告)日：2004-11-02
申请号：US10227814
申请日：2002-08-27
申请人： Kousuke Yoshihara , Keiichi Tanaka , Taro Yamamoto , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
发明人： Kousuke Yoshihara , Keiichi Tanaka , Taro Yamamoto , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
IPC分类号： G03F730
CPC分类号： H01L21/6715 , G03D3/06 , G03F7/3021
摘要： In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.
摘要翻译：在其上形成的显影液中的溶解速度低的抗蚀剂膜的显影处理中，首先将低浓度的显影液供给到晶片上，并将晶片放置在规定的时间以允许显影反应进行，然后进一步提供浓度高于首先提供的显影溶液的显影溶液的显影溶液到晶片上，使基板静置并随后冲洗晶片，由此提高均匀性晶片的中心部分和周边部分的线宽度。

28. 发明授权

US08496991B2 Coating treatment method 有权
标题翻译：涂层处理方法
公开(公告)号：US08496991B2
公开(公告)日：2013-07-30
申请号：US13236750
申请日：2011-09-20
申请人： Kousuke Yoshihara , Tomohiro Iseki
发明人： Kousuke Yoshihara , Tomohiro Iseki
IPC分类号： B05D3/12
CPC分类号： H01L21/6715 , G03F7/162
摘要： The present invention supplies a solvent to a front surface of a substrate while rotating the substrate. The substrate is acceleratingly rotated to a first number of rotations, and a resist solution is supplied to a central portion of the substrate during the accelerating rotation and the rotation at a first number of rotations. The substrate is deceleratingly rotated to a second number of rotations, and after the number of rotations of the substrate reaches the second number of rotations, the resist solution is discharged to the substrate. The substrate is then acceleratingly rotated to a third number of rotations higher than the second number of rotations so that the substrate is rotated at the third number of rotations. According to the present invention, consumption of the resist solution can be suppressed and a high in-plane uniformity can be obtained for the film thickness of the resist film.
摘要翻译：本发明在旋转基板的同时将溶剂供给到基板的前表面。基板被加速旋转到第一转数，并且在加速旋转期间以及以第一转数旋转时，将抗蚀剂溶液供应到基板的中心部分。基板减速旋转到第二转数，并且在基板的转数达到第二转数之后，将抗蚀剂溶液排出到基板。然后将衬底加速旋转到高于第二转数的第三转数，使得衬底以第三转数旋转。根据本发明，可以抑制抗蚀剂溶液的消耗，并且可以获得抗蚀剂膜的膜厚度的高的面内均匀性。

29. 发明授权

US07820243B2 Resist coating method and resist coating apparatus 有权
标题翻译：抗蚀涂层方法和抗蚀涂层设备
公开(公告)号：US07820243B2
公开(公告)日：2010-10-26
申请号：US11549793
申请日：2006-10-16
申请人： Kousuke Yoshihara , Tomohiro Iseki
发明人： Kousuke Yoshihara , Tomohiro Iseki
IPC分类号： B05D3/12
CPC分类号： H01L21/6715 , G03F7/162
摘要： A resist coating method supplies a resist solution to substantially the center of a target substrate to be processed while rotating the target substrate at a first rotational speed, then decelerates the rotation of the substrate to a second rotational speed lower than the first rotational speed, or until rotational halt, makes the deceleration smaller in the deceleration step as the rotational speed becomes closer to the second rotational speed or the rotational halt, and accelerates the rotation of the substrate to a third rotational speed higher than the second rotational speed to spin off a residue of the resist solution.
摘要翻译：抗蚀剂涂布方法在以第一旋转速度旋转目标基板的同时将抗蚀剂溶液基本上提供到待加工的目标基板的中心，然后将基板的旋转减速到低于第一转速的第二转速，或直到旋转停止，随着转速变得更接近于第二转速或转动停止，减速步骤中的减速度变小，并且将基板的旋转加速到高于第二转速的第三转速，以使其脱离抗蚀剂溶液的残留物。

30. 发明授权

US08505479B2 Resist coating apparatus 有权
标题翻译：抗蚀涂层设备
公开(公告)号：US08505479B2
公开(公告)日：2013-08-13
申请号：US12877187
申请日：2010-09-08
申请人： Kousuke Yoshihara , Tomohiro Iseki
发明人： Kousuke Yoshihara , Tomohiro Iseki
IPC分类号： B05C11/00 , B05C11/02
CPC分类号： H01L21/6715 , G03F7/162
摘要： A resist coating apparatus supplies a resist solution to substantially the center of a target substrate to be processed while rotating the target substrate at a first rotational speed, then decelerates the rotation of the substrate to a second rotational speed lower than the first rotational speed, or until rotational halt, makes the deceleration smaller in the deceleration step as the rotational speed becomes closer to the second rotational speed or the rotational halt, and accelerates the rotation of the substrate to a third rotational speed higher than the second rotational speed to spin off a residue of the resist solution.
摘要翻译：抗蚀涂层装置在以第一转速旋转目标基板的同时将抗蚀剂溶液基本上提供到待加工的目标基板的中心，然后使基板的旋转减速到低于第一转速的第二转速，或直到旋转停止，随着转速变得更接近于第二转速或转动停止，减速步骤中的减速度变小，并且将基板的旋转加速到高于第二转速的第三转速，以使其脱离抗蚀剂溶液的残留物。

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