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21. 发明申请

US20060120126A1 Magnetic cell and magnetic memory 有权
标题翻译：磁性细胞和磁记忆
公开(公告)号：US20060120126A1
公开(公告)日：2006-06-08
申请号：US11328112
申请日：2006-01-10
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C19/08
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell comprises: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
摘要翻译：磁性电池包括：第一铁磁层，其磁化基本上固定在第一方向上; 第二铁磁层，其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层，所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。可以通过在第一和第二铁磁层之间通过电流，在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。

22. 发明授权

US07126848B2 Magnetic cell and magnetic memory 有权
标题翻译：磁性细胞和磁记忆
公开(公告)号：US07126848B2
公开(公告)日：2006-10-24
申请号：US11213865
申请日：2005-08-30
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell includes a first magnetically fixed part including a laminated structure where a first ferromagnetic layer, a nonmagnetic layer and a second ferromagnetic layer are laminated, a second magnetically fixed part including a third ferromagnetic layer, a fourth ferromagnetic layer provided between the first and the second magnetically fixed parts, a first intermediate layer provided between the first magnetically fixed part and the fourth ferromagnetic layer, and a second intermediate layer provided between the second magnetically fixed part and the fourth ferromagnetic layer, a direction of magnetization of the fourth ferromagnetic layer being determined under an influence of spin-polarized electrons upon the fourth ferromagnetic layer by passing a current between the first and the second magnetically fixed parts.
摘要翻译：磁性电池包括第一磁性固定部分，其包括层压结构，其中第一铁磁层，非磁性层和第二铁磁层被层压，包括第三铁磁层的第二磁性固定部分，设置在第一和第二铁磁层之间的第四铁磁层第二磁性固定部分，设置在第一磁性固定部分和第四铁磁性层之间的第一中间层和设置在第二磁性固定部分和第四铁磁性层之间的第二中间层，第四铁磁性层的磁化方向通过在第一和第二磁性固定部分之间通过电流，在自旋极化电子对第四铁磁层的影响下确定。

23. 发明授权

US07120049B2 Magnetic cell and magnetic memory 有权
标题翻译：磁性细胞和磁记忆
公开(公告)号：US07120049B2
公开(公告)日：2006-10-10
申请号：US11405418
申请日：2006-04-18
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell includes a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
摘要翻译：磁性单元包括第一铁磁层，其磁化基本上固定在第一方向上; 第二铁磁层，其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层，所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。可以通过在第一和第二铁磁层之间通过电流，在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。

24. 发明授权

US07042762B2 Magnetic element and magnetic element array 失效
标题翻译：磁性元件和磁性元件阵列
公开(公告)号：US07042762B2
公开(公告)日：2006-05-09
申请号：US11118443
申请日：2005-05-02
申请人： Shiho Nakamura , Shigeru Haneda , Hiroaki Yoda
发明人： Shiho Nakamura , Shigeru Haneda , Hiroaki Yoda
IPC分类号： G11C11/15
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/3263 , H01F10/329 , H01L27/228
摘要： A magnetic element, including a first magnetic reference part (a) including a first ferromagnetic substance pinned in magnetization (M1) substantially in a first direction, a second magnetic reference part (E) including a second ferromagnetic substance pinned in magnetization (M3) substantially in a second direction, and a magnetic recording part (C) provided between the first and second magnetic reference parts. The magnetic recording part includes a third ferromagnetic substance. A spin transfer intermediate part (B) is provided between the first magnetic reference part and the magnetic recording part. An intermediate part (D) is provided between the second magnetic reference part and the magnetic recording part. A magnetization (M2) of the third ferromagnetic substance can be directed in a direction parallel or anti-parallel to the first direction by passing a writing current between the first magnetic reference part and the magnetic recording part. A relative relation between the second direction and the direction of the magnetization of the third ferromagnetic substance can be detected by passing a sense current between the second magnetic reference part and the magnetic recording part.
摘要翻译：一种磁性元件，包括第一磁性参考部分（a），其包括基本上沿第一方向被钉扎在磁化（M 1）中的第一铁磁性物质，第二磁性参考部分（E），包括在磁化中被钉扎的第二铁磁性物质（M 3 ）和设置在第一和第二磁性参考部分之间的磁记录部分（C）。磁记录部分包括第三铁磁物质。自旋转移中间部分（B）设置在第一磁参考部分和磁记录部分之间。中间部分（D）设置在第二磁参考部分和磁记录部分之间。第三铁磁性物质的磁化强度（M 2）可以通过使第一磁性参考部件和磁性记录部件之间的写入电流通过而在与第一方向平行或反平行的方向上被引导。可以通过在第二磁参考部分和磁记录部分之间通过感测电流来检测第二方向与第三铁磁物质的磁化方向之间的相对关系。

25. 发明申请

US20050099724A1 Magnetic device and magnetic memory 有权
标题翻译：磁性设备和磁记忆体
公开(公告)号：US20050099724A1
公开(公告)日：2005-05-12
申请号：US10954099
申请日：2004-09-30
申请人： Shiho Nakamura , Shigeru Haneda
发明人： Shiho Nakamura , Shigeru Haneda
IPC分类号： G11B5/127 , G11B5/39 , G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/00 , H01L43/08
CPC分类号： G11C11/15 , G11B5/1276
摘要： A magnetic device comprises first through third ferromagnetic layers, first and second intermediate layers and a couple of electrodes. The first ferromagnetic layer includes magnetic layers and one or more nonmagnetic layers which are alternately stacked, at least one layer of the magnetic layers has magnetization substantially fixed to a first direction, and two or more layers of the magnetic layers are ferromagnetically coupled via the nonmagnetic layers while having easy axes of magnetization parallel to a film plane. The second ferromagnetic layer has magnetization substantially fixed to a second direction. The third ferromagnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The third ferromagnetic layer has a variable direction of magnetization. The first and second intermediate layers are provided between the ferromagnetic layers. The electrodes are configured to provide write current between the first and second ferromagnetic layers to cause spin-polarized electrons to act on the third ferromagnetic layer so that the direction of magnetization of the third ferromagnetic layer is determined depending on a direction of the current. The ferromagnetic coupling has a strength such that a parallel magnetic alignment of the magnetic layers is maintained when the write current.
摘要翻译：磁性器件包括第一至第三铁磁层，第一和第二中间层以及一对电极。第一铁磁层包括交替堆叠的磁性层和一个或多个非磁性层，至少一层磁性层具有基本上固定在第一方向上的磁化强度，并且两层或多层磁性层通过非磁性铁磁耦合同时具有平行于膜平面的容易的磁化轴。第二铁磁层具有基本固定到第二方向的磁化。第三铁磁层设置在第一铁磁层和第二铁磁层之间。第三铁磁层具有可变的磁化方向。第一和第二中间层设置在铁磁层之间。电极被配置为在第一和第二铁磁层之间提供写入电流，以使自旋极化电子作用在第三铁磁层上，使得第三铁磁层的磁化方向取决于电流的方向。铁磁耦合具有当写入电流时保持磁性层的并行磁性取向的强度。

26. 发明申请

US20060187705A1 MAGNETIC CELL AND MAGNETIC MEMORY 有权
标题翻译：磁性细胞和磁性记忆
公开(公告)号：US20060187705A1
公开(公告)日：2006-08-24
申请号：US11405418
申请日：2006-04-18
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell includes a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
摘要翻译：磁性单元包括第一铁磁层，其磁化基本上固定在第一方向上; 第二铁磁层，其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层，所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。可以通过在第一和第二铁磁层之间通过电流，在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。

27. 发明授权

US07042758B2 Magnetic cell and magnetic memory 失效
标题翻译：磁性细胞和磁记忆
公开(公告)号：US07042758B2
公开(公告)日：2006-05-09
申请号：US10943835
申请日：2004-09-20
申请人： Shigeru Haneda , Shiho Nakamura , Yuuichi Oosawa
发明人： Shigeru Haneda , Shiho Nakamura , Yuuichi Oosawa
IPC分类号： G11C7/00
CPC分类号： G11C11/15
摘要： It is possible to provide a magnetic cell having a high developing rate of MR characteristics and a reduced fluctuation without causing element falling-down and a magnetic memory having the same. A magnetic cell includes: a lower electrode; an electrically conductive pillar formed on the lower electrode; a magnetoresistance effect film having at least two ferromagnetic layers formed on the electrically conductive pillar and an intermediate layer provided between the ferromagnetic layers; an upper electrode formed on the magnetoresistance effect film; a support layer formed from at least one metal directly on a side face of the electrically conductive pillar or via an insulating layer; and a current diffusion preventing layer provided between the support layer and the lower electrode, wherein a height of the electrically conductive pillar, a thickness of the current diffusion preventing layer, and a thickness of the support layer satisfy relationships of h > t1 + t2 > 30 30 + L × h where h represents the height of the electrically conductive pillar, t1 represents the thickness of the current diffusion preventing layer, t2 represents the thickness of the support layer, and L (nm) represents a length of a short side of the electrically conductive pillar.
摘要翻译：可以提供具有高的MR特性显影速率和降低的波动而不引起元件下落的磁性单元和具有该磁性单元的磁存储器。磁性电池包括：下电极; 形成在下电极上的导电柱; 具有形成在所述导电柱上的至少两个铁磁层和设置在所述铁磁层之间的中间层的磁阻效应膜; 形成在磁阻效应膜上的上电极; 由直接在导电柱的侧面上的至少一个金属或经由绝缘层形成的支撑层; 以及设置在支撑层和下部电极之间的电流扩散防止层，其中导电柱的高度，电流扩散防止层的厚度和支撑层的厚度满足 $h30MN>+Lxh其中h表示导电柱的高度，t 1表示电流扩散防止层的厚度，t 2表示支撑层的厚度，L（nm）表示导电柱的短边。$

28. 发明申请

US20060007730A1 Magnetic cell and magnetic memory 有权
公开(公告)号：US20060007730A1
公开(公告)日：2006-01-12
申请号：US11227493
申请日：2005-09-16
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell comprises: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.

29. 发明授权

US06956766B2 Magnetic cell and magnetic memory 有权
标题翻译：磁性细胞和磁记忆
公开(公告)号：US06956766B2
公开(公告)日：2005-10-18
申请号：US10721549
申请日：2003-11-26
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell comprises: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
摘要翻译：磁性电池包括：第一铁磁层，其磁化基本上固定在第一方向上; 第二铁磁层，其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层，所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。可以通过在第一和第二铁磁层之间通过电流，在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。

30. 发明申请

US20050219767A1 Magneto-resistive element 有权
标题翻译：磁阻元件
公开(公告)号：US20050219767A1
公开(公告)日：2005-10-06
申请号：US11087762
申请日：2005-03-24
申请人： Shiho Nakamura , Shigeru Haneda
发明人： Shiho Nakamura , Shigeru Haneda
IPC分类号： G11C11/15 , G11B5/127 , G11B5/33 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
CPC分类号： H01L43/08 , G11B5/39
摘要： A magneto-resistive element comprising a free layer having two ferromagnetic layers having a nonmagnetic layer interposed therebetween are coupled with each other in an anti-ferromagnetic manner, a difference between an absolute value of a total of magnetizations of at least one ferromagnetic layer in which the magnetization direction is a first direction and an absolute value of a total of magnetizations of at least one ferromagnetic layer in which the magnetization direction is a second direction which is opposite to the first direction is equal to or smaller than 5×10−15 emu, and planes parallel to a substrate of the ferromagnetic layers are smaller as the planes are distant from the substrate.
摘要翻译：包括具有插入其间具有非磁性层的两个铁磁层的自由层的磁阻元件以反铁磁方式彼此耦合，其中至少一个铁磁层的总磁化的绝对值之间的差异在其中磁化方向是第一方向，并且其中磁化方向是与第一方向相反的第二方向的至少一个铁磁层的磁化总和的绝对值等于或小于5×10 -15 平行于铁磁层的衬底的平面随着平面远离衬底而变小。

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