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21. 发明申请

US20060141382A1 Resist composition and method of forming resist pattern using same 审中-公开
标题翻译：抗蚀剂组合物和使用其形成抗蚀剂图案的方法
公开(公告)号：US20060141382A1
公开(公告)日：2006-06-29
申请号：US10531883
申请日：2003-12-18
申请人： Masaru Takeshita , Miwa Miyairi , Hideo Hada , Takeshi Iwai
发明人： Masaru Takeshita , Miwa Miyairi , Hideo Hada , Takeshi Iwai
IPC分类号： G03C1/76
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397
摘要： There are provided a resist composition that produces a resist pattern of good shape, and a method of forming a resist pattern that uses such a resist composition. The resist composition comprises a resin component (A) that undergoes a change in alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), wherein the component (B) comprises a compound represented by a general formula (I) shown below [wherein, R1 to R3 each represent, independently, a methyl group or an ethyl group; and X− represents an anion].
摘要翻译：提供了产生良好形状的抗蚀剂图案的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。抗蚀剂组合物包含在酸作用下碱溶性变化的树脂组分（A），暴露时产生酸的酸产生剂组分（B）和有机溶剂（C），其中组分（B）包含由以下所示的通式（I）表示的化合物[其中，R 1至R 3各自独立地表示甲基或乙基; 和X - 代表阴离子]。

22. 发明申请

US20080063975A1 Polymer, Positive Resist Composition and Method for Forming Resist Pattern 有权
标题翻译：聚合物，正电阻组合物和形成抗蚀剂图案的方法
公开(公告)号：US20080063975A1
公开(公告)日：2008-03-13
申请号：US11628172
申请日：2005-06-02
申请人： Masaru Takeshita , Hideo Hada , Ryotaro Hayashi , Takeshi Iwai , Syogo Matsumaru , Satoshi Fujimura
发明人： Masaru Takeshita , Hideo Hada , Ryotaro Hayashi , Takeshi Iwai , Syogo Matsumaru , Satoshi Fujimura
IPC分类号： C08G63/08 , G03F1/00 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： A polymer, a positive resist composition, and a method for forming a resist pattern that are able to form a resist pattern with a high level of resolution and excellent etching resistance. The present invention uses a polymer that contains a structural unit (a1) represented by a general formula (a-1) shown below and a structural unit (a2) represented by a general formula (a-2) shown below, another polymer that contains the structural unit (a1) and a structural unit (a3) represented by a general formula (a-3) shown below, and another polymer that contains the structural unit (a1), the structural unit (a2), and the structural unit (a3).
摘要翻译：聚合物，正性抗蚀剂组合物和形成能够以高分辨率和优异耐蚀刻性形成抗蚀剂图案的抗蚀剂图案的方法。本发明使用含有下述通式（a-1）表示的结构单元（a1）和下述通式（a-2）表示的结构单元（a2）的聚合物，该聚合物含有结构单元（a1）和由下述通式（a-3）表示的结构单元（a3）和含有结构单元（a1），结构单元（a2）和结构单元（ a3）。

23. 发明授权

US07312015B2 Process for refining crude resin for electronic material 有权
标题翻译：电解材料粗树脂精制工艺
公开(公告)号：US07312015B2
公开(公告)日：2007-12-25
申请号：US10543263
申请日：2004-01-28
申请人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
发明人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
IPC分类号： G03C1/76 , G03C1/492 , G03C1/494 , C08F6/00 , C08J3/00
CPC分类号： C08J3/14 , C08J2333/04 , G03F7/0397
摘要： A process is provided for effectively removing by-products such as oligomers contained within a crude resin for an electronic material, thus producing a resin for an electronic material. In this process, a crude resin for an electronic material containing (a1) structural units derived from a (meth)acrylate ester with a hydrophilic site is washed using (b1) an organic solvent which is capable of dissolving said crude resin for an electronic material and which separates into two layers when combined with water, and (b2) water.
摘要翻译：提供了一种方法，用于有效地除去副产物，例如包含在用于电子材料的粗树脂中的低聚物，从而制备用于电子材料的树脂。在该方法中，使用（b1）能够将所述粗树脂溶解在电子材料中的有机溶剂洗涤含有（a1）衍生自具有亲水部位的（甲基）丙烯酸酯的结构单元的电子材料用粗制树脂当与水结合时分离成两层，（b2）水。

24. 发明授权

US07494759B2 Positive resist compositions and process for the formation of resist patterns with the same 有权
标题翻译：正极抗蚀剂组合物和与其形成抗蚀剂图案的方法
公开(公告)号：US07494759B2
公开(公告)日：2009-02-24
申请号：US11597696
申请日：2005-05-24
申请人： Hideo Hada , Masaru Takeshita , Satoshi Yamada
发明人： Hideo Hada , Masaru Takeshita , Satoshi Yamada
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0397
摘要： A positive resist composition comprising (A) a resin component and (B) an acid generator component, wherein the component (A) is a copolymer which comprises constituent units (a1) derived from a mono(α-lower alkyl)acrylate having an acid-dissociable dissolution-inhibiting group, constituent units (b1) derived from a mono α-lower alkyl)acrylate having a lactone ring, and constituent units (c1) derived from a poly(α-lower alkyl)acrylate; and a positive resist composition comprising (A) a resin component and (B) an acid generator component, wherein the component (A) is a star polymer having a core containing acid-dissociable dissolution-inhibiting groups and arms bonded to the core.
摘要翻译：一种正型抗蚀剂组合物，其包含（A）树脂组分和（B）酸产生剂组分，其中组分（A）是包含衍生自具有酸的单（α-低级烷基）丙烯酸酯的构成单元（a1）的共聚物 - 衍生自具有内酯环的单α-低级烷基）丙烯酸酯的结构单元（b1）和衍生自聚（α-低级烷基）丙烯酸酯的构成单元（c1）; 以及包含（A）树脂成分和（B）酸产生剂成分的正型抗蚀剂组合物，其中，成分（A）是具有含有酸解离性溶解抑制基团的核和与核结合的臂的星形聚合物。

25. 发明授权

US07763412B2 Polymer, positive resist composition and method for forming resist pattern 有权
标题翻译：聚合物，正性抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07763412B2
公开(公告)日：2010-07-27
申请号：US11628172
申请日：2005-06-02
申请人： Masaru Takeshita , Hideo Hada , Ryotaro Hayashi , Takeshi Iwai , Syogo Matsumaru , Satoshi Fujimura
发明人： Masaru Takeshita , Hideo Hada , Ryotaro Hayashi , Takeshi Iwai , Syogo Matsumaru , Satoshi Fujimura
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： A polymer, a positive resist composition, and a method for forming a resist pattern that are able to form a resist pattern with a high level of resolution and excellent etching resistance. The present invention uses a polymer that contains a structural unit (a1) represented by a general formula (a-1) shown below and a structural unit (a2) represented by a general formula (a-2) shown below, another polymer that contains the structural unit (a1) and a structural unit (a3) represented by a general formula (a-3) shown below, and another polymer that contains the structural unit (a1), the structural unit (a2), and the structural unit (a3).
摘要翻译：聚合物，正性抗蚀剂组合物和形成能够以高分辨率和优异耐蚀刻性形成抗蚀剂图案的抗蚀剂图案的方法。本发明使用含有下述通式（a-1）表示的结构单元（a1）和下述通式（a-2）表示的结构单元（a2）的聚合物，该聚合物含有结构单元（a1）和由下述通式（a-3）表示的结构单元（a3）和含有结构单元（a1）的另一种聚合物，结构单元（a2）和结构单元 a3）。

26. 发明申请

US20100015548A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20100015548A1
公开(公告)日：2010-01-21
申请号：US11993005
申请日：2006-06-16
申请人： Masaru Takeshita , Hideo Hada , Takeshi Iwai
发明人： Masaru Takeshita , Hideo Hada , Takeshi Iwai
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0045 , Y10S430/111
摘要： A positive resist composition including a resin component (A) and an acid generator component (B), the resin component (A) including a copolymer (A1) having a structural unit (a1) derived from an acrylate ester having a monocyclic or polycyclic group-containing acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an acrylate ester having a lactone-containing cyclic group, a structural unit (a3) derived from an acrylate ester having a hydroxyl group and/or cyano group-containing polycyclic group, and a structural unit (a4) represented by general formula (a4-1) shown below: wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; R′ represents a hydrogen atom, a lower alkyl group or an alkoxy group of 1 to 5 carbon atoms; and f represents 0 or 1.
摘要翻译：包含树脂组分（A）和酸产生剂组分（B）的正型抗蚀剂组合物，所述树脂组分（A）包含具有衍生自具有单环或多环基团的丙烯酸酯的结构单元（a1）的共聚物（A1）含有可离解的溶解抑制基团，衍生自具有含内酯环状基团的丙烯酸酯的结构单元（a2），衍生自具有羟基和/或含氰基的丙烯酸酯的结构单元（a3）多环基和由以下通式（a4-1）表示的结构单元（a4）：其中R表示氢原子，卤素原子，低级烷基或卤代低级烷基; R'表示氢原子，低级烷基或碳原子数1〜5的烷氧基。 f表示0或1。

27. 发明授权

US07855044B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07855044B2
公开(公告)日：2010-12-21
申请号：US11993005
申请日：2006-06-16
申请人： Masaru Takeshita , Hideo Hada , Takeshi Iwai
发明人： Masaru Takeshita , Hideo Hada , Takeshi Iwai
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0045 , Y10S430/111
摘要： A positive resist composition including a resin component (A) and an acid generator component (B), the resin component (A) including a copolymer (A1) having a structural unit (a1) derived from an acrylate ester having a monocyclic or polycyclic group-containing acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an acrylate ester having a lactone-containing cyclic group, a structural unit (a3) derived from an acrylate ester having a hydroxyl group and/or cyano group-containing polycyclic group, and a structural unit (a4) represented by general formula (a4-1) shown below: wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; R′ represents a hydrogen atom, a lower alkyl group or an alkoxy group of 1 to 5 carbon atoms; and f represents 0 or 1.
摘要翻译：包含树脂组分（A）和酸产生剂组分（B）的正型抗蚀剂组合物，所述树脂组分（A）包含具有衍生自具有单环或多环基团的丙烯酸酯的结构单元（a1）的共聚物（A1）含有可离解的溶解抑制基团，衍生自具有含内酯环状基团的丙烯酸酯的结构单元（a2），衍生自具有羟基和/或含氰基的丙烯酸酯的结构单元（a3）多环基和由以下通式（a4-1）表示的结构单元（a4）：其中R表示氢原子，卤素原子，低级烷基或卤代低级烷基; R'表示氢原子，低级烷基或碳原子数1〜5的烷氧基。 f表示0或1。

28. 发明申请

US20060141384A1 Process for refining crude resin for electronic material 有权
标题翻译：电解材料粗树脂精制工艺
公开(公告)号：US20060141384A1
公开(公告)日：2006-06-29
申请号：US10543263
申请日：2004-01-28
申请人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
发明人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
IPC分类号： G03C1/76
CPC分类号： C08J3/14 , C08J2333/04 , G03F7/0397
摘要： A process is provided for effectively removing by-products such as oligomers contained within a crude resin for an electronic material, thus producing a resin for an electronic material. In this process, a crude resin for an electronic material containing (a1) structural units derived from a (meth)acrylate ester with a hydrophilic site is washed using (b1) an organic solvent which is capable of dissolving said crude resin for an electronic material and which separates into two layers when combined with water, and (b2) water.
摘要翻译：提供了一种方法，用于有效地除去副产物，例如包含在用于电子材料的粗树脂中的低聚物，从而制备用于电子材料的树脂。在该方法中，使用（b1）能够将所述粗树脂溶解在电子材料中的有机溶剂洗涤含有（a1）衍生自具有亲水部位的（甲基）丙烯酸酯的结构单元的电子材料用粗制树脂当与水结合时分离成两层，（b2）水。

29. 发明授权

US08206890B2 Resist composition, method of forming resist pattern, compound and acid generator 有权
标题翻译：抗蚀剂组合物，形成抗蚀剂图案的方法，化合物和酸发生剂
公开(公告)号：US08206890B2
公开(公告)日：2012-06-26
申请号：US12499610
申请日：2009-07-08
申请人： Akiya Kawaue , Yoshiyuki Utsumi , Takehiro Seshimo , Tsuyoshi Nakamura , Naoto Motoike , Hiroaki Shimizu , Kensuke Matsuzawa , Hideo Hada
发明人： Akiya Kawaue , Yoshiyuki Utsumi , Takehiro Seshimo , Tsuyoshi Nakamura , Naoto Motoike , Hiroaki Shimizu , Kensuke Matsuzawa , Hideo Hada
IPC分类号： G03F7/039 , C07C381/12 , C07C309/04 , C07C309/17
CPC分类号： G03F7/0045 , C07C309/09 , C07C309/10 , C07C309/17 , C07C311/48 , C07C311/51 , C07C317/04 , C07C317/10 , C07C381/12 , C07C2601/14 , C07C2602/42 , C07C2603/74 , C07D307/92 , C07D307/94 , C07D493/18 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/12 , Y10S430/121 , Y10S430/122
摘要： A resist composition including: a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid; and an acid-generator component (B) which generates acid upon exposure, wherein said acid-generator component (B) comprises an acid generator (B1) including a compound represented by general formula (b1-11) shown below: wherein R7″ to R9″ each independently represent an aryl group or an alkyl group, wherein two of R7″ to R9″ may be bonded to each other to form a ring with the sulfur atom, and at least one of R7″ to R9″ represents a substituted aryl group having a group represented by general formula (I) shown below as a substituent; X− represents an anion; and Rf represents a fluorinated alkyl group.
摘要翻译：一种抗蚀剂组合物，其包含：在酸的作用下在碱性显影液中表现出改变的溶解度的碱成分（A）和产生酸的酸发生剂组分（B），其中所述酸产生剂组分（B）包含酸产生剂（B1），其包含如下所示的由通式（b1-11）表示的化合物：其中R7“至 R9“各自独立地表示芳基或烷基，其中R7”至R9“中的两个可以彼此键合以形成具有硫原子的环，并且R 7”至R 9“中的至少一个表示取代的芳基具有下述通式（I）表示的基团作为取代基的基团; X-表示阴离子; Rf表示氟化烷基。

30. 发明授权

US08012669B2 Resist composition and method of forming resist pattern 有权
标题翻译：抗蚀剂图案的抗蚀剂组成和方法
公开(公告)号：US08012669B2
公开(公告)日：2011-09-06
申请号：US12400203
申请日：2009-03-09
申请人： Hiroaki Shimizu , Yasuhiro Yoshii , Yoshiyuki Utumi , Hideo Hada
发明人： Hiroaki Shimizu , Yasuhiro Yoshii , Yoshiyuki Utumi , Hideo Hada
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) consisting of a compound represented by general formula (b1) shown below (wherein Q1 represents a divalent linkage group containing an oxygen atom; Y1 represents a fluorinated alkylene group of 1 to 4 carbon atoms which may have a substituent, with the proviso that the carbon atom adjacent to the sulfur atom within the —SO3− group has a fluorine atom bonded thereto; X represents a hydrocarbon group of 3 to 30 carbon atoms which may have a substituent; and A+ represents an organic cation), and the resist composition further including an organic compound (C) which generates an acid exhibiting a weaker acid strength than the acid generated from the acid generator (B1) upon exposure. [Chemical Formula 1] X-Q1-Y1—SO3+A+ (b1)
摘要翻译：一种抗蚀剂组合物，其包含在酸的作用下在碱性显影液中溶解度变化的碱成分（A）和曝光时产生酸的酸发生剂成分（B），所述酸发生剂成分（B）含有酸发生剂（b1）由下述通式（b1）表示的化合物（其中Q1表示含有氧原子的二价连接基团; Y1表示可具有取代基的1〜4个碳原子的氟化亚烷基，条件是与-SO 3 - 基中的硫原子相邻的碳原子具有氟原子键合; X表示可以具有取代基的碳原子数3〜30的烃基，A +表示有机阳离子），抗蚀剂组合物还包含有机化合物（C），该有机化合物（C）在曝光时产生的酸强度比酸产生剂（B1）产生的酸弱。 [化学式1] X-Q1-Y1-SO3 + A +（b1）

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